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1. 发明授权

US5972743A Precursor compositions for ion implantation of antimony and ion implantation process utilizing same 失效
标题翻译：用于离子注入锑的前体组合物和利用其的离子注入工艺
公开(公告)号：US5972743A
公开(公告)日：1999-10-26
申请号：US759761
申请日：1996-12-03
申请人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
发明人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
IPC分类号： C23C14/48 , C30B31/00 , C30B31/22 , H01L21/265 , H01L21/338 , H01L21/331
CPC分类号： H01L21/26513 , C23C14/48 , C30B31/00 , C30B31/22 , Y10S438/914
摘要： A method for n-doping a material layer with antimony, comprising ion implanting antimony from an antimony precursor composition including a compound of the formula SbX.sub.n ((CH.sub.2).sub.y SiR.sub.3).sub.n-3, wherein: n is an integer having a value of 1 or 2; y is an integer having a value of from 1 to 3 inclusive; each R is independently selected from C.sub.1 -C.sub.4 alkyl; and each X is independently selected from halo substituents. The antimony precursor composition may further include a fluorine-containing auxiliary gas, to effect in situ cleaning of the ionization chamber during ion implantation.
摘要翻译：一种用锑掺杂材料层的方法，包括从包含式SbXn（（CH 2）y SiR 3）n-3的化合物的锑前体组合物离子注入锑，其中：n是具有值1的整数或 2; y为1〜3的整数，每个R独立地选自C 1 -C 4烷基; 并且每个X独立地选自卤素取代基。锑前体组合物还可以包括含氟辅助气体，以在离子注入期间实现电离室的原位清洁。

2. 发明授权

US5902639A Method of forming bismuth-containing films by using bismuth amide compounds 失效
标题翻译：通过使用铋酰胺化合物形成含铋膜的方法
公开(公告)号：US5902639A
公开(公告)日：1999-05-11
申请号：US828566
申请日：1997-03-31
申请人： Timothy E. Glassman , Gautam Bhandari , Thomas H. Baum
发明人： Timothy E. Glassman , Gautam Bhandari , Thomas H. Baum
IPC分类号： C07F9/94 , C23C16/40 , G02F1/00 , G02F1/05 , C23C16/00
CPC分类号： G02F1/0027 , C07F9/94 , C23C16/40 , C23C16/407 , G02F1/0541 , G02F2203/12
摘要： A method of forming a bismuth-containing material layer on a substrate, comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor, to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL.sup.1.sub.x L.sup.2.sub.y (NR.sup.1 R.sub.2).sub.z wherein: z is an integer of from 1 to 3; x+y+z=3; each of L.sup.1 and L.sup.2 is independently selected from C.sub.1 -C.sub.4 alkyl, C.sub.1 14 C.sub.4 alkoxide, .beta.-diketonate, cyclic amido, cyclic tris-alkoxoamine, and C.sub.6 -C.sub.10 aryl; and each of R.sup.1 and R.sup.2 is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 alkoxy, C.sub.6 -C.sub.8 cycloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.4 carboxyl, and --SiR.sup.3.sub.3 wherein each R.sup.3 is independently selected from H and C.sub.1 -C.sub.4 alkyl. Bismuth-containing films of the invention may be utilized in the construction of spatial light modulator devices, as buffer layers for the fabrication of ferroelectric material devices, and in dielectric, ferroelectric and superconductor thin film applications.
摘要翻译：一种在基板上形成含铋材料层的方法，包括用于形成含铋源源蒸气的铋酰胺源试剂的起泡器输送或液体输送蒸发，以及从含铋源源蒸气在铋基底上沉积以在基板上形成含铋材料层。铋酰胺源试剂可以包括式BiL1xL2y（NR1R2）z的铋酰胺化合物其中：z是1至3的整数; x + y + z = 3; L1和L2各自独立地选自C 1 -C 4烷基，C 11-14 C 4醇盐，β-二酮酸盐，环状酰胺基，环状三烷氧基胺和C 6 -C 10芳基; R 1和R 2各自独立地选自C 1 -C 8烷基，C 1 -C 8烷氧基，C 6 -C 8环烷基，C 6 -C 10芳基，C 1 -C 4羧基和-SiR 33，其中每个R 3独立地选自H和C 1 -C 4 烷基。本发明的含铋膜可用于构造空间光调制器件，作为用于制造铁电材料器件的缓冲层，以及介电，铁电和超导体薄膜应用。

3. 发明授权

US5820664A Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same 失效
标题翻译：用于化学气相沉积的前体组合物和包含其的配体交换金属 - 有机前体溶液
公开(公告)号：US5820664A
公开(公告)日：1998-10-13
申请号：US414504
申请日：1995-03-31
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G02B6/036 , H01L39/24 , C09K3/00
CPC分类号： H01L39/2441 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/45561 , Y10S423/14
摘要： A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.
摘要翻译：一种金属源试剂液体溶液，其包含：（i）至少一种金属配位络合物，其包含与稳定络合物中的至少一种配位体配位结合的金属，其中所述配体选自β-二酮化合物， β-酮基，β-二亚胺，C 1 -C 8烷基，C 2 -C 10烯基，C 2 -C 15环烯基，C 6 -C 10芳基，C 1 -C 8烷氧基及其氟化衍生物; 和（ii）金属配位络合物的溶剂。该溶液有效地用于金属配位络合物如Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd的金属化学气相沉积，Cr，W，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi ，和/或Yb。溶剂可以包括甘醇二甲醚溶剂，链烷醇，有机醚，脂族烃和/或芳族烃。具有两种或更多种金属配位络合物的本发明的溶液对有害的配体交换反应具有抗性，这对于CVD应用的金属络合物的稳定性和/或挥发性是不利的。

4. 发明授权

US08299286B2 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US08299286B2
公开(公告)日：2012-10-30
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Connie L. Gordon, legal representative , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
发明人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
IPC分类号： C07F7/00 , C23C18/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A β-diketonate alkoxide metal compound and a source reagent composition are provided. The β-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one β-diketonate ligand.
摘要翻译：提供了一种二酮醇盐金属化合物和一种源试剂组合物。所述二烷基醇盐金属化合物可以包括选自Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd，Cr，W ，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi，Lu，Th ，Pd，Pt，Ga，In，Au，Ag，Li，Na，K，Rb，Cs，Mo和Yb。该金属可以与至少一种醇盐配体和一种β-二酮配体络合。

5. 发明授权

US6110529A Method of forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：通过化学气相沉积在基板上形成金属膜的方法
公开(公告)号：US6110529A
公开(公告)日：2000-08-29
申请号：US484654
申请日：1995-06-07
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C07F3/00 , C07F5/00 , C07F7/00 , C07F9/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： C07F3/003 , C07F19/005 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , G02B6/02 , H01L39/2441
摘要： A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.-thioketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：一种在衬底上形成金属膜的方法，包括通过化学气相沉积从所述下式的金属有机络合物沉积所述金属膜：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X配位; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮化合物，β-硫代酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基化物，全氟烷氧基化物和希夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

6. 发明申请

US20110171382A1 SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US20110171382A1
公开(公告)日：2011-07-14
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
IPC分类号： C23C16/06 , C07C49/92 , C07F7/28 , C07F7/00 , C07F7/24 , C07F5/00 , C09D1/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.
摘要翻译：一种金属有机络合物组合物，其包含选自以下的金属有机络合物：包含与一个或多个单齿或多齿有机配体配位的一个或多个金属中心原子的金属有机络合物，并与一个或多个络合的单齿或多齿配位体络合，所述配位体含有一个或多个独立地选自元素C，N，H，S，O和F的原子的原子; 其中当金属原子数为1并且同时复合单齿或多齿配体的数目为1时，金属有机络合物的络合单齿或多齿配体选自β-酮亚胺，β-二亚胺，C2- C10链烯基，C2-C15环烯基和C6-C10芳基。

7. 发明申请

US20140234436A1 SYSTEMS AND METHODS FOR CAPTURE, STORAGE, AND SUPPLYING PHOSPHINE GAS 审中-公开
标题翻译：捕获，储存和供应磷酸气体的系统和方法
公开(公告)号：US20140234436A1
公开(公告)日：2014-08-21
申请号：US14240404
申请日：2012-06-12
申请人： James V. McManus , Edward A. Sturm , Thomas H. Baum , J. Donald Carruthers , Joshua B. Sweeney
发明人： James V. McManus , Edward A. Sturm , Thomas H. Baum , J. Donald Carruthers , Joshua B. Sweeney
IPC分类号： A01N59/26 , A01M13/00
CPC分类号： A01N59/26 , A01M13/00 , B01J20/08 , B01J20/103 , B01J20/18 , B01J20/20 , B01J20/28011 , B01J20/28066 , C01B25/06 , A01N25/08 , A01N25/18
摘要： A system and process for generating and packaging phosphine gas, in which the process includes: reacting water and aluminum phosphide to generate phosphine, and providing the phosphine in a gas mixture at a phosphine concentration below a lower explosive limit; adsorptively removing phosphine from the gas mixture; and packaging the removed phosphine in a fluid storage and dispensing vessel.
摘要翻译：一种用于产生和包装磷化氢气体的系统和方法，其中该方法包括：使水和磷化铝磷化氢反应生成磷化氢，并在低于爆炸下限的磷化氢浓度的气体混合物中提供磷化氢; 从气体混合物中吸附去除磷化氢; 并将去除的磷化氢包装在流体储存和分配容器中。

8. 发明授权

US08882889B2 Recovery of Xe and other high value compounds 有权
标题翻译：回收Xe等高价值化合物
公开(公告)号：US08882889B2
公开(公告)日：2014-11-11
申请号：US13704552
申请日：2011-06-22
申请人： Thomas H. Baum , J. Donald Carruthers , Richard Fricke , Joshua B. Sweeney , James V. McManus , Edward A. Sturm
发明人： Thomas H. Baum , J. Donald Carruthers , Richard Fricke , Joshua B. Sweeney , James V. McManus , Edward A. Sturm
IPC分类号： B01D53/02 , B01J20/28 , B01D53/00 , B01J20/20 , B01D53/68 , G01T1/178 , B01D53/14 , C01B23/00 , B01D53/047 , B01D53/75
CPC分类号： G01N33/0036 , B01D53/002 , B01D53/02 , B01D53/0476 , B01D53/1418 , B01D53/68 , B01D53/75 , B01D2253/102 , B01D2253/308 , B01D2253/31 , B01D2256/18 , B01D2257/102 , B01D2257/2047 , B01D2258/0216 , B01D2259/402 , B01D2259/4146 , B01J20/20 , B01J20/28011 , B01J20/28042 , B01J20/2808 , C01B23/0063 , C01B2210/0037 , C01B2210/0046 , C01B2210/0098 , G01T1/178 , G01V9/007
摘要： A system and method for recovering high value gas from a process stream, material or environment containing same, e.g., xenon by contacting gas from the process stream, material or environment with a carbon adsorbent effective to sorptively capture same, free of or with reduced concentration of fluid species present with the high value gas in the high value gas-containing gas in the process stream, material or environment. Other aspects of the disclosure include a radon detection method and product.
摘要翻译：用于从工艺流，含有其的材料或环境回收高价值气体的系统和方法，例如通过使来自工艺流，材料或环境的气体与有效吸附捕获相同的碳吸附剂的气体，不含或以浓度降低在工艺流，材料或环境中的高价值含气气体中存在高价值气体的流体种类。本公开的其它方面包括氡检测方法和产品。

9. 发明申请

US20130112076A1 RECOVERY OF Xe AND OTHER HIGH VALUE COMPOUNDS 有权
公开(公告)号：US20130112076A1
公开(公告)日：2013-05-09
申请号：US13704552
申请日：2011-06-22
申请人： Thomas H. Baum , J. Donald Carruthers , Richard Fricke , Joshua B. Sweeney , James V. McManus , Edward A. Sturm
发明人： Thomas H. Baum , J. Donald Carruthers , Richard Fricke , Joshua B. Sweeney , James V. McManus , Edward A. Sturm
IPC分类号： B01D53/14 , B01J20/20
CPC分类号： G01N33/0036 , B01D53/002 , B01D53/02 , B01D53/0476 , B01D53/1418 , B01D53/68 , B01D53/75 , B01D2253/102 , B01D2253/308 , B01D2253/31 , B01D2256/18 , B01D2257/102 , B01D2257/2047 , B01D2258/0216 , B01D2259/402 , B01D2259/4146 , B01J20/20 , B01J20/28011 , B01J20/28042 , B01J20/2808 , C01B23/0063 , C01B2210/0037 , C01B2210/0046 , C01B2210/0098 , G01T1/178 , G01V9/007
摘要： A system and method for recovering high value gas from a process stream, material or environment containing same, e.g., xenon by contacting gas from the process stream, material or environment with a carbon adsorbent effective to sorptively capture same, free of or with reduced concentration of fluid species present with the high value gas in the high value gas-containing gas in the process stream, material or environment. Other aspects of the disclosure include a radon detection method and product.

10. 发明授权

US08802882B2 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films 有权
标题翻译：包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法
公开(公告)号：US08802882B2
公开(公告)日：2014-08-12
申请号：US12862739
申请日：2010-08-24
申请人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
发明人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
IPC分类号： C07F7/10
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译：在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

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