会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Lanthanide/phosphorus precursor compositions for MOCVD of
lanthanide/phosphorus oxide films
    • 镧系元素/磷前体组合物用于镧系元素/磷氧化物膜的MOCVD
    • US5698022A
    • 1997-12-16
    • US696478
    • 1996-08-14
    • Timothy E. GlassmanPaul V. Chayka
    • Timothy E. GlassmanPaul V. Chayka
    • C07F9/09C07F9/50C23C16/18C23C16/40C23C16/56C23C16/00C07F5/00
    • C23C16/18C07F9/095C07F9/5045C23C16/40C23C16/56
    • A precursor composition useful for vapor deposition formation of lanthanide metal/phosphorus oxide films, comprising a precursor compound selected from the group consisting of: (i) adducts of the formula MA.sub.3 (L).sub.x ; (ii) phosphido complexes of the formulae M(PR.sub.3).sub.3 or M(PR.sub.3).sub.3 L.sub.x ; and (iii) disubstituted phosphate complexes of the formulae A.sub.2 M(O.sub.2 P(OR).sub.2), AM(O.sub.2 P(OR).sub.2).sub.2, and M(O.sub.2 P(OR).sub.2).sub.3, wherein: x is from 1 to 5, A=Cp or .beta.-diketonate, Cp=cyclopentadienyl, methylcyclopentadienyl, or TMS-cyclopentadienyl, R=C.sub.1 -C.sub.8 alkyl, and L=a phosphorus-containing ligand selected from the group consisting of phosphine, phosphine oxide, phosphite, phosphate, and 1,2-bis(dimethoxyphosphoryl)benzene, subject to the provisos that: when x is 2 or greater, each L may be the same as or different from the other L; and when the precursor compound is a .beta.-diketonate compound of formula (i), L is not phosphate or phosphine oxide. The precursor composition may be employed for forming a lanthanide metal/phosphorus oxide film on a substrate, by depositing a lanthanide metal/phosphorus material on the substrate from the lanthanide metal/phosphorus precursor composition in vaporized form, and incorporating oxygen in the lanthanide metal/phosphorus material to form the lanthanide metal/phosphorus oxide film on the substrate.
    • 用于镧系元素金属/磷氧化物膜的气相沉积形成的前体组合物,其包含前体化合物,所述前体化合物选自:(i)式MA3(L)x的加合物; (ii)式M(PR3)3或M(PR3)3Lx的膦酰基配合物; 和(iii)式A2M(O 2 P(OR)2),AM(O 2 P(OR)2)2和M(O 2 P(OR)2)3)的二取代磷酸盐络合物,其中:x为1至5,A Cp =β-二酮,Cp =环戊二烯基,甲基环戊二烯基或TMS-环戊二烯基,R = C 1 -C 8烷基,L =选自磷化氢,氧化膦,亚磷酸酯,磷酸酯和1 (二甲氧基磷酰基)苯,但条件是:当x为2或更大时,每个L可以与另一个L相同或不同; 并且当前体化合物是式(i)的β-二酮化合物时,L不是磷酸盐或氧化膦。 前体组合物可以用于在基底上形成镧系元素金属/磷氧化物膜,通过在镧系元素金属/磷前体组合物上以蒸发形式沉积镧系元素金属/磷材料在基体上,并将镧系金属/ 磷材料在基板上形成镧系元素金属/磷氧化物膜。
    • 2. 发明授权
    • Method for liquid delivery chemical vapor deposition of carbide films on
substrates
    • 液体输送方法化学气相沉积碳化物薄膜在基材上
    • US5952046A
    • 1999-09-14
    • US10002
    • 1998-01-21
    • Paul V. Chayka
    • Paul V. Chayka
    • C23C16/32C23C16/448
    • C23C16/32C23C16/448
    • A method of forming a carbide material on a substrate, comprising vaporizing a carbide source reagent to form a carbide source reagent vapor, and contacting the carbide source reagent vapor with the substrate to deposit the carbide material on the substrate, wherein the carbide source reagent comprises a compound of the formula: ##STR1## wherein: R.sub.1, R.sub.2, R.sub.3 and R.sub.4 may each vary independently of the others and are selected from the group consisting of hydrogen and C.sub.1 -C.sub.8 alkyl;M is selected from the group consisting of Si, Nb, Ge, Sn, Pb, V, W, Cr, Mo, Ta, Ti, Zr, Hf, Mn, Pt, Pd, Ir, Rh and Ru;A and B may vary independently of one another and are selected from the group consisting of C.sub.1 -C.sub.4 alkyl; andn is at least 2.The method of the invention may be used to form SiC or other carbide coatings on substrates to enhance tribological characteristics thereof, or to form thin film layers of SiC or other carbides for electronic device fabrication.
    • 一种在基板上形成碳化物材料的方法,包括使碳化物源试剂汽化以形成碳化物源试剂蒸气,并使碳化物源试剂蒸气与基板接触以将碳化物材料沉积在基板上,其中碳化物源试剂包括 下式的化合物:其中:R 1,R 2,R 3和R 4可各自独立地独立地选自氢和C 1 -C 8烷基; M选自Si,Nb,Ge,Sn,Pb,V,W,Cr,Mo,Ta,Ti,Zr,Hf,Mn,Pt,Pd,Ir,Rh和Ru组成的组; A和B可以彼此独立地变化,并且选自C1-C4烷基; 并且n至少为2.本发明的方法可用于在基底上形成SiC或其他碳化物涂层以增强其摩擦学特性,或形成用于电子器件制造的SiC或其它碳化物的薄膜层。