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1. 发明申请

US20150337436A1 METHOD AND APPARATUS TO HELP PROMOTE CONTACT OF GAS WITH VAPORIZED MATERIAL 有权
标题翻译：方法和装置帮助促进与气体材料接触的气体
公开(公告)号：US20150337436A1
公开(公告)日：2015-11-26
申请号：US14815805
申请日：2015-07-31
申请人： Entegris, Inc.
发明人： John N. Gregg , Scott L. Battle , Jeffrey I. Banton , Donn K. Naito , Ravi K. Laxman
IPC分类号： C23C16/448
CPC分类号： C23C16/4483 , C23C16/4408 , C23C16/4481 , C23C16/45544 , C23C16/50 , F17C3/00 , F17C3/02 , F17C11/00 , F17C2203/03 , Y02E60/321 , Y10S261/65
摘要： Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.
摘要翻译：可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。容器可以包括具有可移除顶部的安瓿。限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。管可以设置在容器内并且联接到气体入口。可以进一步提供过滤器，流量计和液位传感器。由引入的气体与汽化材料的接触产生的产物气体可以被输送到原子层沉积（ALD）或类似的工艺设备。包含固体的源材料的至少一部分可以溶解在溶剂中，然后除去溶剂以产生设置在蒸发器内的源材料（例如，金属络合物）。

2. 发明授权

US09005365B2 Method and apparatus for depositing LED organic film 有权
标题翻译：用于沉积LED有机膜的方法和装置
公开(公告)号：US09005365B2
公开(公告)日：2015-04-14
申请号：US13359434
申请日：2012-01-26
申请人： Vladimir Bulovic , Marc A. Baldo , Martin A. Schmidt , Valerie Gassend , Jianglong Chen
发明人： Vladimir Bulovic , Marc A. Baldo , Martin A. Schmidt , Valerie Gassend , Jianglong Chen
IPC分类号： C23C16/448 , C23C16/455 , C23C16/04 , H01L51/00 , B05D1/12 , H01L51/56
CPC分类号： H01L51/0011 , B05D1/12 , C23C16/04 , C23C16/042 , C23C16/448 , C23C16/4481 , C23C16/4483 , C23C16/4485 , C23C16/45565 , C23C16/45568 , H01L51/56
摘要： In one embodiment the disclosure relates to an apparatus for depositing an organic material on a substrate, including a source heater for heating organic particles to form suspended organic particles; a transport stream for delivering the suspended organic particles to a discharge nozzle, the discharge nozzle having a plurality of micro-pores, the micro-pores providing a conduit for passage of the suspended organic particles; and a nozzle heater for pulsatingly heating the micro-pores nozzle to discharge the suspended organic particles from the discharge nozzle.
摘要翻译：在一个实施方案中，本公开涉及一种用于在基底上沉积有机材料的装置，包括用于加热有机颗粒以形成悬浮的有机颗粒的源加热器; 用于将悬浮的有机颗粒输送到排放喷嘴的输送流，所述排放喷嘴具有多个微孔，所述微孔提供用于悬浮的有机颗粒通过的导管; 以及喷嘴加热器，用于脉动地加热微孔喷嘴以从排出喷嘴排出悬浮的有机颗粒。

3. 发明授权

US08309173B2 System for controlling the sublimation of reactants 有权
标题翻译：用于控制反应物升华的系统
公开(公告)号：US08309173B2
公开(公告)日：2012-11-13
申请号：US12964222
申请日：2010-12-09
申请人： Marko Tuominen , Eric Shero , Mohith Verghese
发明人： Marko Tuominen , Eric Shero , Mohith Verghese
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , C23C16/405 , C23C16/4483 , C23C16/45525
摘要： An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.
摘要翻译：一种装置和方法改善了升华容器内固体前体的加热。在一个实施例中，惰性导热元件分散在固体前体单元中。例如，导热元件可以包括粉末，珠，棒，纤维等。在一种布置中，微波能量可以直接加热导热元件。

4. 发明授权

US07921805B2 Deposition from liquid sources 有权
标题翻译：液体源沉积
公开(公告)号：US07921805B2
公开(公告)日：2011-04-12
申请号：US12691243
申请日：2010-01-21
申请人： Michael A. Todd , Ivo Raaijmakers
发明人： Michael A. Todd , Ivo Raaijmakers
IPC分类号： C23C16/00
CPC分类号： H01L21/67253 , C23C16/4481 , C23C16/4483 , C23C16/4486 , H01L21/02381 , H01L21/02422 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/02573 , H01L21/0262 , H01L21/67115
摘要： A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
摘要翻译：在半导体制造过程中，使用液体注入器将硅前体汽化并注入到处理室中以形成含硅层。注射器连接到硅前体源，其优选包括与一种或多种掺杂剂前体的混合物中的液体丙硅烷。将混合物计量为液体并输送到注射器，然后将其蒸发并注入到处理室中。

5. 发明授权

US07828274B2 Method and apparatus to help promote contact of gas with vaporized material 有权
标题翻译：有助于促进气体与气化材料接触的方法和装置
公开(公告)号：US07828274B2
公开(公告)日：2010-11-09
申请号：US12358723
申请日：2009-01-23
申请人： John N. Gregg , Scott L. Battle , Jeffrey I. Banton , Donn K. Naito , Ravi Laxman
发明人： John N. Gregg , Scott L. Battle , Jeffrey I. Banton , Donn K. Naito , Ravi Laxman
IPC分类号： B01F3/04
CPC分类号： C23C16/4483 , C23C16/4408 , C23C16/4481 , C23C16/45544 , C23C16/50 , F17C3/00 , F17C3/02 , F17C11/00 , F17C2203/03 , Y02E60/321 , Y10S261/65
摘要： Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.
摘要翻译：可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。容器可以包括具有可移除顶部的阿姆空。限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。管可以设置在容器内并且联接到气体入口。可以进一步提供过滤器，流量计和液位传感器。由引入的气体与汽化材料的接触产生的产物气体可以被输送到原子层沉积（ALD）或类似的工艺设备。包含固体的源材料的至少一部分可以溶解在溶剂中，然后除去溶剂以产生设置在蒸发器内的源材料（例如，金属络合物）。

6. 发明申请

US20100107978A1 DEPOSITION FROM LIQUID SOURCES 有权
标题翻译：液体来源沉积
公开(公告)号：US20100107978A1
公开(公告)日：2010-05-06
申请号：US12691243
申请日：2010-01-21
申请人： Michael A. Todd , Ivo Raaijmakers
发明人： Michael A. Todd , Ivo Raaijmakers
IPC分类号： B05C11/00 , C23C16/00
CPC分类号： H01L21/67253 , C23C16/4481 , C23C16/4483 , C23C16/4486 , H01L21/02381 , H01L21/02422 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/02573 , H01L21/0262 , H01L21/67115
摘要： A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
摘要翻译：在半导体制造过程中，使用液体注入器将硅前体汽化并注入到处理室中以形成含硅层。注射器连接到硅前体源，其优选包括与一种或多种掺杂剂前体的混合物中的液体丙硅烷。将混合物计量为液体并输送到注射器，然后将其蒸发并注入到处理室中。

7. 发明授权

US07601225B2 System for controlling the sublimation of reactants 有权
标题翻译：用于控制反应物升华的系统
公开(公告)号：US07601225B2
公开(公告)日：2009-10-13
申请号：US10463309
申请日：2003-06-16
申请人： Marko Tuominen , Eric Shero , Mohith Verghese
发明人： Marko Tuominen , Eric Shero , Mohith Verghese
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4481 , C23C16/405 , C23C16/4483 , C23C16/45525
摘要： An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.
摘要翻译：一种装置和方法改善了升华容器内固体前体的加热。在一个实施例中，惰性导热元件分散在固体前体单元中。例如，导热元件可以包括粉末，珠，棒，纤维等。在一种布置中，微波能量可以直接加热导热元件。

8. 发明申请

US20040026372A1 Plasma treatment method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US20040026372A1
公开(公告)日：2004-02-12
申请号：US10367246
申请日：2003-02-14
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroto Takenaka , Hiroshi Nishikawa
IPC分类号： C23F001/00 , C23C016/00
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
摘要翻译：一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活物种影响晶圆。

9. 发明授权

US06511706B1 MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery 失效
标题翻译： SBT的MOCVD使用四氢呋喃类溶剂体系进行前驱体交付
公开(公告)号：US06511706B1
公开(公告)日：2003-01-28
申请号：US09441694
申请日：1999-11-16
申请人： Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers-Christos , Jeffrey F. Roeder , Witold Paw
发明人： Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers-Christos , Jeffrey F. Roeder , Witold Paw
IPC分类号： C23C1640
CPC分类号： G02B6/02 , C07F9/94 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.
摘要翻译：用于液体输送MOCVD的前体组合物，包括溶解在含有四氢呋喃的溶剂体系中的SBT前体。相关的液体输送MOCVD方法可以通过前体组合物在平均孔径在约50至约200微米范围内的多孔蒸发元件上蒸发来进行，所得前体蒸气与载气混合，实现SBT膜的高效率形成。

10. 发明授权

US6106737A Plasma treatment method utilizing an amplitude-modulated high frequency power 失效
标题翻译：使用调幅高频功率的等离子体处理方法
公开(公告)号：US6106737A
公开(公告)日：2000-08-22
申请号：US94451
申请日：1998-06-10
申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
发明人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/509 , C23C16/517 , H01J37/32
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
摘要翻译：一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活物种影响晶圆。

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