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1. 发明申请

US20150279678A1 IIIA-VA GROUP SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PREPARING SAME 有权
标题翻译： IIIA-VA组半导体单晶衬底及其制备方法
公开(公告)号：US20150279678A1
公开(公告)日：2015-10-01
申请号：US14388236
申请日：2012-03-26
申请人： Morris Young , Davis Zhang , Vincent Wensen Liu , Yuanli Wang
发明人： Morris Young , Davis Zhang , Vincent Wensen Liu , Yuanli Wang
IPC分类号： H01L21/223 , H01L29/207
CPC分类号： H01L21/2233 , C30B29/40 , C30B29/42 , C30B31/00 , H01L21/3245 , H01L29/207
摘要： An IIIA-VA group semi-conductor single crystal substrate (2) has one of or both of the following two properties: the content of oxygen in the range from the surface of the wafer to a depth of 10 μm ranges from 1.6×1016 atoms/cm3 to 5.6×1017 atoms/cm3, and an electron mobility ranges from 4,800 cm2/V·S to 5,850 cm2/V·S. Further, a method for preparing the semi-conductor single crystal substrate (2) comprises: placing a to-be-processed single crystal substrate (2) in a container (4); sealing the container (4), and keeping the to-be-processed single crystal substrate (2) in a temperature range in which the crystalline melting point is from −240° C. to −30° C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000° C. to 1,200° C. for 5 hours to 20 hours.
摘要翻译： IIIA-VA族半导体单晶基板（2）具有以下两个性质之一或两者：从晶片表面到深度10μm的范围内的氧含量为1.6×1016原子 / cm3至5.6×1017原子/ cm3，电子迁移率范围为4,800cm2 / V·S至5,850cm2 / V·S。此外，制备半导体单晶衬底（2）的方法包括：将待处理的单晶衬底（2）放置在容器（4）中; 密封容器（4），并将待处理的单晶基板（2）保持在结晶熔点为-240℃至-30℃的温度范围内5小时至20小时 ; 优选地将砷化镓单晶保持在1000℃至1200℃的温度下5小时至20小时。

2. 发明申请

US20150044378A1 METHODS FOR MANUFACTURING ARCHITECTURAL CONSTRUCTS 审中-公开
标题翻译：制造建筑结构的方法
公开(公告)号：US20150044378A1
公开(公告)日：2015-02-12
申请号：US14464541
申请日：2014-08-20
申请人： McAlister Technologies, LLC
发明人： Roy Edward McAlister
IPC分类号： B05D5/00 , B05D1/36 , B05D3/12 , B05D7/00 , B05D3/02 , B05D3/10
CPC分类号： B05D5/00 , B01D39/20 , B05D1/36 , B05D3/0218 , B05D3/107 , B05D3/12 , B05D7/50 , C01B32/05 , C01B32/186 , C01B32/19 , C01B32/194 , C01B35/14 , C23C16/01 , C23C16/26 , C23C16/342 , C30B25/02 , C30B29/02 , C30B29/64 , C30B29/68 , C30B31/00 , C30B31/04 , C30B31/06 , C30B33/00 , H02K7/025 , H02N2/0005 , Y10T74/2119 , Y10T428/24793 , Y10T428/2495
摘要： An architectural construct is a synthetic material that includes a matrix characterization of different crystals engineered to exhibit certain properties. An architectural construct can be fabricated by a process involving layer deposition, formation, exfoliation and spacing. In one aspect, purified methane can be dehydrogenated onto a substrate by applying heat through the substrate. Deposited carbon can form a plurality of layers of a matrix characterization of crystallized carbon through self-organization. The layers can be exfoliated and spaced to configure parallel orientation at a desired spacing and thickness using selected precursors and applying heat, pressure, or both. The desired architectural construct can further be stabilized and doped to exhibit desired properties.
摘要翻译：建筑构造是一种合成材料，其包括工程化以显示某些特性的不同晶体的矩阵表征。可以通过涉及层沉积，形成，剥离和间隔的工艺来制造建筑构造。在一个方面，纯化的甲烷可以通过加热通过基底而脱氢到基底上。沉积的碳可通过自组织形成多个层状的结晶碳表征。这些层可以被剥离和间隔，以使用所选择的前体和施加热，压力或两者来以期望的间隔和厚度来配置平行取向。可以进一步稳定和掺杂所需的结构构造以显示所需的性质。

3. 发明申请

US20130101808A1 ARCHITECTURAL CONSTRUCT HAVING A PLURALITY OF IMPLEMENTATIONS 审中-公开
标题翻译：具有多项实施的建筑结构
公开(公告)号：US20130101808A1
公开(公告)日：2013-04-25
申请号：US13584658
申请日：2012-08-13
申请人： Roy Edward McAlister
发明人： Roy Edward McAlister
IPC分类号： B32B7/02 , H02N2/00 , B01D39/20 , H02K7/02 , B32B3/02 , B32B7/04
CPC分类号： B05D5/00 , B01D39/20 , B05D1/36 , B05D3/0218 , B05D3/107 , B05D3/12 , B05D7/50 , C01B32/05 , C01B32/186 , C01B32/19 , C01B32/194 , C01B35/14 , C23C16/01 , C23C16/26 , C23C16/342 , C30B25/02 , C30B29/02 , C30B29/64 , C30B29/68 , C30B31/00 , C30B31/04 , C30B31/06 , C30B33/00 , H02K7/025 , H02N2/0005 , Y10T74/2119 , Y10T428/24793 , Y10T428/2495
摘要： An architectural construct is a synthetic material that includes a matrix characterization of different crystals. An architectural construct can be configured as a solid mass or as parallel layers that can be on a nano-, micro-, and macro-scale. Its configuration can determine its behavior and functionality under a variety of conditions. Implementations of an architectural construct can include its use as a substrate, sacrificial construct, carrier, filter, sensor, additive, and catalyst for other molecules, compounds, and substances, or may also include a means to store energy and generate power.
摘要翻译：建筑构造是包含不同晶体的矩阵表征的合成材料。建筑构造可以被配置为固体物质或者可以是纳米级，微尺度和宏观尺度的平行层。其配置可以在各种条件下确定其行为和功能。建筑结构的实施可以包括其用作基质，牺牲构件，载体，过滤器，传感器，添加剂和用于其它分子，化合物和物质的催化剂，或者也可以包括储存能量和发电的手段。

4. 发明申请

US20120224599A1 MID-IR MICROCHIP LASER: ZNS:CR2+ LASER WITH SATURABLE ABSORBER MATERIAL 有权
标题翻译： MID-IR微光激光器：ZNS：CR2 +具有可饱和吸收材料的激光
公开(公告)号：US20120224599A1
公开(公告)日：2012-09-06
申请号：US13309496
申请日：2011-12-01
申请人： Sergey B. Mirov , Vladimir V. Fedorov
发明人： Sergey B. Mirov , Vladimir V. Fedorov
IPC分类号： H01S5/30
CPC分类号： H01S3/0805 , C30B29/48 , C30B31/00 , C30B31/02 , H01S3/0014 , H01S3/0604 , H01S3/0627 , H01S3/08009 , H01S3/08086 , H01S3/094038 , H01S3/094042 , H01S3/094046 , H01S3/09415 , H01S3/1055 , H01S3/108 , H01S3/113 , H01S3/115 , H01S3/117 , H01S3/162 , H01S3/1623 , H01S3/1628 , H01S2301/04 , Y10S438/917
摘要： A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. Multiple applications of the laser material are contemplated in the invention.
摘要翻译：激光增益材料的制造方法和这种介质的利用方法包括以下步骤：通过脉冲激光沉积或等离子溅射在晶体生长之后，在ZnS晶面上引入可控厚度的过渡金属，优选Cr 2+薄膜，热退火用于在温度和曝光时间内有效地将掺杂剂热扩散到晶体体积中的晶体在体积中提供掺杂剂的最高浓度而不降低由于散射和浓缩猝灭引起的激光性能，以及通过以下方式形成微芯片激光器：将反射镜直接沉积在薄的Cr：ZnS晶片的平坦和平行的抛光面上，或依赖于这些面的内部反射。在本发明中考虑了激光材料的多种应用。

5. 发明授权

US07368317B2 Method of producing an N-type diamond with high electrical conductivity 失效
标题翻译：制造高导电性的N型金刚石的方法
公开(公告)号：US07368317B2
公开(公告)日：2008-05-06
申请号：US11144279
申请日：2005-06-03
申请人： Jacques Paul Marie Chevallier , Zephirin Symplice Teukam , Dominique Ballutaud
发明人： Jacques Paul Marie Chevallier , Zephirin Symplice Teukam , Dominique Ballutaud
IPC分类号： H01L21/00
CPC分类号： H01L21/2236 , C30B29/04 , C30B31/00 , C30B31/06 , H01L21/0405 , H01L21/041 , Y10S438/914
摘要： The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor, in order to form donor groups containing the donor species, at a temperature that is less than or equal to the dissociation temperature of the complexes formed between the acceptor and the donor species.
摘要翻译：本发明涉及生产n型金刚石的方法。本发明的方法包括n掺杂阶段，在该阶段期间，在最初掺杂受体的金刚石中真空扩散供体物质，以形成含有供体物质的供体基团，温度小于或等于在受体和供体物质之间形成的络合物的解离温度。

6. 发明申请

US20060130743A1 Low temperature load and bake 有权
公开(公告)号：US20060130743A1
公开(公告)日：2006-06-22
申请号：US11352738
申请日：2006-02-10
申请人： Paul Brabant , Joe Italiano , Jianqing Wen
发明人： Paul Brabant , Joe Italiano , Jianqing Wen
IPC分类号： C30B23/00 , C30B25/00 , C30B28/14 , C30B11/00 , C30B28/12
CPC分类号： C23C16/4408 , C23C16/0209 , C23C16/0227 , C23C16/4405 , C30B25/02 , C30B25/18 , C30B29/30 , C30B31/00 , H01L21/02046 , H01L21/02052 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. Advantageously, a short, low temperature process consumes very little of the thermal budget, such that the process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake, particularly in combination with low temperature plasma cleaning and low temperature wafer loading prior to the bake, and deposition after the bake at temperatures lower than conventional epitaxial deposition. The process enables epitaxial deposition of silicon-containing layers over semiconductor surfaces, particularly enabling epitaxial deposition over a silicon germanium base layer. By use of a low-temperature bake, the silicon germanium base layer can be cleaned to facilitate further epitaxial deposition without relaxing the strained crystal structure of the silicon germanium.

7. 发明申请

US20050281301A1 Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material 有权
公开(公告)号：US20050281301A1
公开(公告)日：2005-12-22
申请号：US11140271
申请日：2005-05-27
申请人： Sergey Mirror , Vladimir Federov
发明人： Sergey Mirror , Vladimir Federov
IPC分类号： H01S3/16 , C30B31/00 , C30B31/02 , H01S3/06 , H01S3/08 , H01S3/081 , H01S3/094 , H01S3/0941 , H01S3/1055 , H01S3/113
CPC分类号： H01S3/0805 , C30B29/48 , C30B31/00 , C30B31/02 , H01S3/0014 , H01S3/0604 , H01S3/0627 , H01S3/08009 , H01S3/08086 , H01S3/094038 , H01S3/094042 , H01S3/094046 , H01S3/09415 , H01S3/1055 , H01S3/108 , H01S3/113 , H01S3/115 , H01S3/117 , H01S3/162 , H01S3/1623 , H01S3/1628 , H01S2301/04 , Y10S438/917
摘要： A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. The gain material is susceptible to utilization of direct diode or fiber laser pumping of a microchip laser with a level of power density providing formation of positive lens and corresponding cavity stabilization as well as threshold population inversion in the laser material. Multiple applications of the laser material are contemplated in the invention.

8. 发明申请

US20030072340A1 Mid-ir microchip laser: ZnS:Cr2+ laser with saturable absorber material 有权
标题翻译：中红外微芯片激光器：具有可饱和吸收材料的ZnS：Cr2 +激光器
公开(公告)号：US20030072340A1
公开(公告)日：2003-04-17
申请号：US10247272
申请日：2002-09-19
发明人： Sergey B. Mirov , Vladimir V. Fedorov
IPC分类号： H01L021/00 , H01S003/14 , H01S005/00
CPC分类号： H01S3/0805 , C30B29/48 , C30B31/00 , C30B31/02 , H01S3/0014 , H01S3/0604 , H01S3/0627 , H01S3/08009 , H01S3/08086 , H01S3/094038 , H01S3/094042 , H01S3/094046 , H01S3/09415 , H01S3/1055 , H01S3/108 , H01S3/113 , H01S3/115 , H01S3/117 , H01S3/162 , H01S3/1623 , H01S3/1628 , H01S2301/04 , Y10S438/917
摘要： A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2null thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. The gain material is susceptible to utilization of direct diode or fiber laser pumping of a microchip laser with a level of power density providing formation of positive lens and corresponding cavity stabilization as well as threshold population inversion in the laser material. Multiple applications of the laser material are contemplated in the invention.
摘要翻译：激光增益材料的制造方法和这种介质的利用方法包括以下步骤：通过脉冲激光沉积或等离子溅射在晶体生长之后，在ZnS晶面上引入可控厚度的过渡金属，优选Cr 2+薄膜，热退火用于在温度和曝光时间内有效地将掺杂剂热扩散到晶体体积中的晶体在体积中提供掺杂剂的最高浓度而不降低由于散射和浓缩猝灭引起的激光性能，以及通过以下方式形成微芯片激光器：将反射镜直接沉积在薄的Cr：ZnS晶片的平坦和平行的抛光面上，或依赖于这些面的内部反射。增益材料易于利用具有功率密度水平的微芯片激光器的直接二极管或光纤激光泵浦，其提供形成正透镜并且相应的腔稳定以及激光材料中的阈值群体反转。在本发明中考虑了激光材料的多种应用。

9. 发明申请

US20010043903A1 Surface impurity-enriched diamond and method of making 失效
标题翻译：富含表面杂质的金刚石及其制造方法
公开(公告)号：US20010043903A1
公开(公告)日：2001-11-22
申请号：US09783441
申请日：2001-02-14
发明人： Marl Philip D'Evelyn , Dong-Sil Park , Thomas Richard Anthony , Clifford Lawrence Spiro , Yue Meng , Christopher Allen Long
IPC分类号： C01B031/06 , B01J003/08
CPC分类号： C30B25/02 , B01J3/062 , B01J2203/061 , B01J2203/062 , B01J2203/0655 , B01J2203/068 , C01B32/25 , C30B29/04 , C30B31/00 , Y10T428/30
摘要： An element-doped diamond crystal is disclosed herein. The crystal includes at least one dopant element which has a greater concentration toward or near an outermost surface of the crystal than in the center of the crystal. The concentration of the dopant element is at a local minimum at least about 5 micrometers below the surface. The concentration-profile of the dopant element for these diamond crystals causes an expansion of the diamond lattice, thereby generating tangential compressive stresses at the surface of the diamond crystal. These stresses beneficially increase the compressive fracture strength of the diamond.
摘要翻译：本文公开了元素掺杂金刚石晶体。所述晶体包括至少一种掺杂元素，所述至少一种掺杂元素朝向或接近晶体的最外表面具有比在晶体中心更大的浓度。掺杂剂元素的浓度在表面下方至少约5微米的局部最小值。用于这些金刚石晶体的掺杂剂元素的浓度分布导致金刚石晶格的膨胀，从而在金刚石晶体的表面产生切向压应力。这些应力有利地增加了金刚石的压缩断裂强度。

10. 发明授权

US3214653A Gold bonded, boron containing semiconductor devices 失效
标题翻译：金键合，含硼半导体器件
公开(公告)号：US3214653A
公开(公告)日：1965-10-26
申请号：US25631663
申请日：1963-02-05
申请人： HUGHES AIRCRAFT CO
发明人： LEONARD BERNSTEIN
IPC分类号： B23K35/30 , C22C1/02 , C22C5/02 , C30B31/00 , H01L21/00
CPC分类号： C22C1/02 , B23K35/3013 , C22C5/02 , C30B31/00 , H01L21/00

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