会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Laser output beam wavefront splitter for bandwidth spectrum control
    • US20050286598A1
    • 2005-12-29
    • US10875662
    • 2004-06-23
    • Richard SandstromDaniel BrownAlexander ErshovIgor FomenkovWilliam Partlo
    • Richard SandstromDaniel BrownAlexander ErshovIgor FomenkovWilliam Partlo
    • G03F7/20H01S3/08H01S3/097H01S3/10H01S3/1055H01S3/13H01S3/22
    • H01S3/0812G03F7/70025G03F7/70575H01S3/08059H01S3/097H01S3/1055H01S3/1305
    • An apparatus and method for providing bandwidth control in a narrow band short pulse duration gas discharge laser output light pulse beam producing system, producing a beam comprising laser output light pulses at a selected pulse repetition rate, is disclosed which may comprise a dispersive bandwidth selection optic selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a tuning mechanism operative to select at least one angle of incidence of the a laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic; the tuning mechanism comprising a plurality of incidence angle selection elements each defining an angle of incidence for a different spatially separated but not temporally separated portion of the laser light pulse to return from the dispersive center wavelength selection optic a laser light pulse comprising a plurality of spatially separated but not temporally separated portions, each portion having one of at least two different selected center wavelengths. The tuning mechanism may comprise a temporal angle of incidence selection element defining an angle of incidence for different temporally separated portions of the pulse to return from the dispersive bandwidth selection optic a laser beam comprising a plurality of temporally separated portions of each pulse, each temporally separated portion of each pulse having one of at least two different selected center wavelengths. The tuning mechanism may comprise a plurality of spatial incidence angle selection elements each defining an angle of incidence for a spatially separated but not temporally separated portion of the laser light pulse, and a plurality of temporal angle of incidence selection elements each defining at least a first angle of incidence for at least a first temporally separated portion of each spatially separated but not temporally separated portion of the pulse and a second angle of incidence for a second temporally separated but not spatially separated portion of each spatially separated portion of the pulse.
    • 4. 发明申请
    • EUV collector debris management
    • EUV收集器碎片管理
    • US20060091109A1
    • 2006-05-04
    • US10979945
    • 2004-11-01
    • William PartloRichard SandstromIgor FomenkovAlexander ErshovWilliam OldhamWilliam MarxOscar Hemberg
    • William PartloRichard SandstromIgor FomenkovAlexander ErshovWilliam OldhamWilliam MarxOscar Hemberg
    • H01L21/306B08B6/00B44C1/22
    • B08B7/00
    • A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
    • 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。
    • 6. 发明申请
    • LPP EUV light source
    • LPP EUV光源
    • US20050205811A1
    • 2005-09-22
    • US10979919
    • 2004-11-01
    • William PartloDaniel BrownIgor FomenkovNorbert BoweringCurtis RettigJoseph MacFarlaneAlexander ErshovBjorn Hansson
    • William PartloDaniel BrownIgor FomenkovNorbert BoweringCurtis RettigJoseph MacFarlaneAlexander ErshovBjorn Hansson
    • G01J1/00G03F7/20H01J65/04H05G2/00
    • B82Y10/00G03F7/70033H05G2/003H05G2/008
    • An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.
    • 描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法,其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体 具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体,以将等离子体中的发射材料压缩到等离子体的发射区域。 等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲,以具有相关联的较低的临界密度,从而在由等离子体的波长定义的等离子体的区域内的等离子体内发生吸收 等离子体照射脉冲从初始目标照射位置充分分离,以实现发射材料的压缩,并且可以压缩发射区域。 激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。 可以从初始目标表面去除等离子体照射脉冲的沉积区域,以确保有利地发射等离子体的压缩。 高转换效率的激光产生的等离子体极紫外(“EUV”)光源可以包括激光初始靶照射脉冲发生机构,用目标照射脉冲照射等离子体引发目标,以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。
    • 9. 发明申请
    • EUV LIGHT SOURCE COLLECTOR EROSION MITIGATION
    • EUV光源收集器腐蚀减轻
    • US20060289808A1
    • 2006-12-28
    • US11238828
    • 2005-09-28
    • William PartloAlexander ErshovIgor Fomenkov
    • William PartloAlexander ErshovIgor Fomenkov
    • H01J61/62
    • G03F7/70916B82Y10/00G01J1/429G03F7/70033G03F7/70175G03F7/70983G21K1/062G21K2201/067H05G2/003
    • An EUV light source collector erosion mitigation system and method is disclosed which may comprise a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma; a replacement material generator positioned to deliver replacement material comprising the capping material to the collector outer surface at a rate sufficient to replace the capping material removed due to the removing interaction. The replacement material generator may comprise a plurality of replacement material generators positioned to respectively deliver replacement material to a selected portion of the collector outer surface, which may comprise a sputtering mechanism sputtering replacement capping material onto the collector outer surface.
    • 公开了一种EUV光源收集器侵蚀缓解系统和方法,其可以包括收集器,其包括多层反射镜收集器,该多层反射镜收集器包括由封装材料构成的收集器外表面,该封盖材料由于与EUV发光等离子体中产生的材料的去除相互作用而被去除 ; 替代材料发生器定位成将包含封盖材料的替换材料以足以代替由于去除相互作用而去除的封盖材料的速率传送到收集器外表面。 替代材料发生器可以包括多个替换材料发生器,其被定位成分别将替代材料递送到集电器外表面的选定部分,其可以包括溅射机构将溅射替换封盖材料涂覆到集电器外表面上。