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    • 2. 发明申请
    • EUV collector debris management
    • EUV收集器碎片管理
    • US20060091109A1
    • 2006-05-04
    • US10979945
    • 2004-11-01
    • William PartloRichard SandstromIgor FomenkovAlexander ErshovWilliam OldhamWilliam MarxOscar Hemberg
    • William PartloRichard SandstromIgor FomenkovAlexander ErshovWilliam OldhamWilliam MarxOscar Hemberg
    • H01L21/306B08B6/00B44C1/22
    • B08B7/00
    • A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
    • 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置,所述EUV等离子体源材料包括将形成蚀刻化合物的材料,所述等离子体源材料在所选择的中心波长周围的带内产生EUV光,包括:EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面,该反射表面包含至少一层,该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料,等离子体源材料与蚀刻剂源材料形成蚀刻化合物,该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。
    • 3. 发明申请
    • LPP EUV plasma source material target delivery system
    • LPP EUV等离子体源材料目标传送系统
    • US20070001130A1
    • 2007-01-04
    • US11174443
    • 2005-06-29
    • Alexander BykanovJ. AlgotsOleh KhodykinOscar Hemberg
    • Alexander BykanovJ. AlgotsOleh KhodykinOscar Hemberg
    • G21G4/00
    • H05G2/001
    • An EUV light generation system and method is disclosed that may comprise a droplet generator producing plasma source material target droplets traveling toward the vicinity of a plasma source material target irradiation site; a drive laser; a drive laser focusing optical element having a first range of operating center wavelengths; a droplet detection radiation source having a second range of operating center wavelengths; a drive laser steering element comprising a material that is highly reflective within at least some part of the first range of wavelengths and highly transmissive within at least some part of the second range of center wavelengths; a droplet detection radiation aiming mechanism directing the droplet detection radiation through the drive laser steering element and the lens to focus at a selected droplet detection position intermediate the droplet generator and the irradiation site. The apparatus and method may further comprise a droplet detection mechanism that may comprise a droplet detection radiation detector positioned to detect droplet detection radiation reflected from a plasma source material droplet.
    • 公开了一种EUV发光系统和方法,其可以包括产生等离子体源材料的液滴发生器,目标液滴朝向等离子体源材料目标照射位置附近行进; 驱动激光器 具有第一操作中心波长范围的驱动激光聚焦光学元件; 具有第二操作中心波长范围的液滴检测辐射源; 驱动激光操纵元件,其包括在第一波长范围的至少一部分内具有高度反射性的材料,并且在第二中心波长范围的至少一部分内具有高度透射性; 液滴检测辐射瞄准机构,其引导液滴检测辐射通过驱动激光转向元件和透镜,以聚焦在液滴发生器和照射部位之间的选定液滴检测位置。 该装置和方法还可以包括液滴检测机构,其可以包括液滴检测放射线检测器,其被定位成检测从等离子体源物质液滴反射的液滴检测辐射。
    • 4. 发明申请
    • METHOD AND APPARATUS FOR EUV LIGHT SOURCE TARGET MATERIAL HANDLING
    • EUV光源目标材料处理方法与装置
    • US20060192155A1
    • 2006-08-31
    • US11088475
    • 2005-03-23
    • J. AlgotsOscar HembergTae Chung
    • J. AlgotsOscar HembergTae Chung
    • H05G2/00
    • H05G2/003H05G2/005H05G2/006
    • An EUV light source plasma source material handling system and method is disclosed which may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is on line. The supply reservoir may comprise a solid form of the plasma source material used to periodically form from a portion of the material in solid form the material in liquid form.
    • 公开了一种EUV光源等离子体源材料处理系统和方法,其可以包括具有与液滴形成毛细管流体连通的液滴发生器等离子体源材料储存器并保持在足以保持等离子体源材料的选定温度范围内的液滴发生器 以液体形式; 等离子体源材料供应系统,其具有与液滴发生器等离子体源材料储存器流体连通的供应储存器,并且至少保持液体形式的补充量的等离子体源材料,用于转移到液滴发生器等离子体源材料储存器,而液滴发生器 在线 在液滴发生器在线时,将液体等离子体源材料从供应储存器传送到液滴发生器等离子体源材料储存器的转印机构。 供应储存器可以包括固体形式的等离子体源材料,其用于从液体形式的固体形式的固体形式的一部分周期性地形成。
    • 5. 发明申请
    • LPP EUV plasma source material target delivery system
    • LPP EUV等离子体源材料目标传送系统
    • US20080179549A1
    • 2008-07-31
    • US12075631
    • 2008-03-12
    • Alexander N. BykanovJ. Martin AlgotsOleh KhodykinOscar Hemberg
    • Alexander N. BykanovJ. Martin AlgotsOleh KhodykinOscar Hemberg
    • G01J3/02
    • H05G2/001
    • An EUV light generation system and method is disclosed that may comprise a droplet generator producing plasma source material target droplets traveling toward the vicinity of a plasma source material target irradiation site; a drive laser; a drive laser focusing optical element having a first range of operating center wavelengths; a droplet detection radiation source having a second range of operating center wavelengths; a drive laser steering element comprising a material that is highly reflective within at least some part of the first range of wavelengths and highly transmissive within at least some part of the second range of center wavelengths; a droplet detection radiation aiming mechanism directing the droplet detection radiation through the drive laser steering element and the lens to focus at a selected droplet detection position intermediate the droplet generator and the irradiation site.
    • 公开了一种EUV发光系统和方法,其可以包括产生等离子体源材料的液滴发生器,目标液滴朝向等离子体源材料目标照射位置附近行进; 驱动激光器 具有第一操作中心波长范围的驱动激光聚焦光学元件; 具有第二操作中心波长范围的液滴检测辐射源; 驱动激光操纵元件,其包括在第一波长范围的至少一部分内具有高度反射性的材料,并且在第二中心波长范围的至少一部分内具有高度透射性; 液滴检测辐射瞄准机构,其引导液滴检测辐射通过驱动激光转向元件和透镜,以聚焦在液滴发生器和照射部位之间的选定液滴检测位置。