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1. 发明授权

US6046501A RF-driven semiconductor device 失效
标题翻译： RF驱动半导体器件
公开(公告)号：US6046501A
公开(公告)日：2000-04-04
申请号：US942443
申请日：1997-10-01
申请人： Osamu Ishikawa , Takahiro Yokoyama , Taketo Kunihisa , Masaaki Nishijima , Shinji Yamamoto , Junji Itoh , Toshio Fujiwara , Kaoru Muramatsu
发明人： Osamu Ishikawa , Takahiro Yokoyama , Taketo Kunihisa , Masaaki Nishijima , Shinji Yamamoto , Junji Itoh , Toshio Fujiwara , Kaoru Muramatsu
IPC分类号： H01L23/31 , H01L23/433 , H01L23/495 , H01L23/66 , H05K1/02 , H05K3/34 , H01L23/04 , H01L23/34
CPC分类号： H05K3/341 , H01L23/3107 , H01L23/4334 , H01L23/49503 , H01L23/66 , H01L2224/27013 , H01L2924/13091 , H01L2924/15153 , H01L2924/15165 , H01L2924/3011 , H05K1/0243 , H05K2201/10689 , H05K2201/10931 , H05K2201/10969 , Y02P70/613
摘要： An RF-driven semiconductor chip is die-bonded to the top face of a metal plate. The semiconductor chip and the metal plate are molded together with outer leads in a plastic package in the form of a rectangular parallelepiped. The metal plate is exposed at the back face of the plastic package. The metal plate is not protruding from the front and rear side faces of the plastic package. The front and rear side faces of the metal plate are flush with the front and rear side faces of the plastic package and partially exposed at the front and rear side faces of the plastic package. The front and rear portions of the plastic package are centrally formed with respective cutaway portions each in the form of a rectangular parallelepiped. The top face of the metal plate is exposed in the cutaway portions formed centrally in the front and rear portions of the plastic package to form solder portions.
摘要翻译： RF驱动的半导体芯片与金属板的顶面芯片接合。半导体芯片和金属板与塑料封装中的外引线一起模塑成长方体形状。金属板在塑料包装的背面露出。金属板不会从塑料封装的前后侧面突出。金属板的前侧面和后侧面与塑料包装件的前侧面和后侧面齐平，并部分地暴露在塑料包装件的前侧和后侧面。塑料包装件的前部和后部中心地形成有各自的切割部分，每个切口部分呈矩形平行六面体形式。金属板的顶面露出在塑料封装的前后部中央形成的切口部，形成焊料部。

2. 发明授权

US5752182A Hybrid IC 失效
标题翻译：混合集成电路
公开(公告)号：US5752182A
公开(公告)日：1998-05-12
申请号：US433926
申请日：1995-05-02
申请人： Tadayoshi Nakatsuka , Junji Itoh , Shinji Yamamoto , Mitsuru Nishitsuji
发明人： Tadayoshi Nakatsuka , Junji Itoh , Shinji Yamamoto , Mitsuru Nishitsuji
IPC分类号： H01L23/64 , H01L25/16 , H03F3/195 , H05K1/16 , H05K3/40 , H04B1/28
CPC分类号： H03F3/195 , H01L23/645 , H01L23/647 , H01L25/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/01055 , H01L2924/01078 , H01L2924/01079 , H01L2924/15159 , H01L2924/15162 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H05K1/165 , H05K3/403
摘要： On a ceramic substrate, spiral-type inductors of a single layer wiring of a metal thin film are provided and respectively connected to a wiring pattern formed on another face of the substrate via through holes. A semiconductor chip is flip-chip mounted on the substrate in a face-down manner. On the face of the semiconductor chip, capacitors composed of a highly dielectric material, resistors formed by an ion implantation method or a thin-film forming method, and FETs are provided, respectively. Interconnection between the substrate and an external circuit board is achieved employing terminals formed at end faces of the substrate. The terminals have a concave shape with respect to the end face of the substrate. Thus, there is no need to use a package, and miniaturization and reduction in cost of a high-performance hybrid IC is achieved.
摘要翻译：在陶瓷基板上，设置金属薄膜的单层布线的螺旋型电感器，并分别通过通孔与形成在基板的另一面上的布线图案连接。半导体芯片以面朝下的方式倒装安装在基板上。在半导体芯片的表面上，分别提供由高介电材料构成的电容器，通过离子注入法形成的电阻或薄膜形成方法以及FET。使用在基板的端面形成的端子来实现基板与外部电路基板之间的互连。端子相对于基板的端面具有凹形。因此，不需要使用封装，并且实现了高性能混合IC的小型化和降低成本。

3. 发明授权

US5847408A Field emission device 失效
标题翻译：场发射装置
公开(公告)号：US5847408A
公开(公告)日：1998-12-08
申请号：US824016
申请日：1997-03-21
申请人： Seigo Kanemaru , Junji Itoh
发明人： Seigo Kanemaru , Junji Itoh
IPC分类号： H01J3/02 , H01L29/06
CPC分类号： H01J3/022 , H01J2201/319
摘要： A field emission device of simple structure enables stabilization and control of field emission current. Emission current is controlled by a plurality of control voltage systems. An emitter having a sharp tip is fabricated by processing a p-type semiconductor substrate, and an n-type source region is provided on the p-type semiconductor substrate surface at a position that is laterally separated from the emitter. An electrode layer having an aperture facing the apex portion of the emitter is provided on an insulating layer, the electrode layer extending to above the n-type source region. Voltage applied to the electrode layer to apply an extractor field to the apex portion of the emitter and to induce inversion layers at the emitter surface and the surface of the p-type semiconductor substrate. The electrode layer is divided into a plurality of electrodes. An extraction voltage is applied to one of these electrodes closest to the emitter, another electrode is connected to an X selection line and another to a Y selection line, thereby controlling emission current.
摘要翻译：具有简单结构的场致发射器件可实现场发射电流的稳定和控制。发射电流由多个控制电压系统控制。通过处理p型半导体衬底制造具有尖锐尖端的发射极，并且在与发射极横向分离的位置处在p型半导体衬底表面上设置n型源极区。具有面向发射极顶点的孔的电极层设置在绝缘层上，电极层延伸到n型源极区域的上方。电压施加到电极层，以将提取器场施加到发射极的顶点，并在p型半导体衬底的发射极表面和表面处诱导反转层。电极层被分成多个电极。将提取电压施加到最靠近发射极的这些电极之一，另一个电极连接到X选择线，而另一个电极连接到Y选择线，从而控制发射电流。

4. 发明授权

US5780318A Cold electron emitting device and method of manufacturing same 失效
标题翻译：冷电子发射器件及其制造方法
公开(公告)号：US5780318A
公开(公告)日：1998-07-14
申请号：US701866
申请日：1996-08-23
申请人： Takayuki Hirano , Junji Itoh , Seigo Kanemaru
发明人： Takayuki Hirano , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02 , H01L21/28 , H01L29/06
CPC分类号： H01J1/3042 , H01J9/025
摘要： A cold electron emitting device has an emitter base portion, an emitter projection portion and a source region, each of which is an n-type semiconductor, formed on a p-type silicon substrate. A metal film which serves as an extraction electrode and a gate electrode of FET is formed via an insulating layer on the region of the substrate which includes the peripheral regions of the emitter base portion and source region. This cold electron emitting device can be manufactured as follows. First, a conical emitter having an emitter projection portion and emitter base portion and a source region are formed on a p-type semiconductor substrate. Next, an insulating layer and a metal film, which becomes an extraction electrode and a gate electrode of FET, is formed on the substrate which includes peripheral regions of the emitter base portion and source region. Then, an n-type impurity is doped in the emitter and the source region to form an n-type emitter and an n-type source region. In this manner, it is possible to manufacture a cold electron emitting device, which has an excellent work precision for the sharp tip of the emitter projection portion and an excellent uniform structure and can stably emit a current.
摘要翻译：冷电子发射器件具有形成在p型硅衬底上的发射极基极部分，发射极突出部分和源极区域，每个都是n型半导体。用作引出电极的金属膜和FET的栅极通过绝缘层在基板的包含发射极基部和源极区的外围区域的区域上形成。该冷电子发射器件可以如下制造。首先，在p型半导体基板上形成具有发射极投射部和发射极基部以及源极区的锥形发射体。接下来，在包括发射极基部和源极区的周边区域的基板上形成作为FET的引出电极和栅电极的绝缘层和金属膜。然后，在发射极和源极区域中掺杂n型杂质以形成n型发射极和n型源极区。以这种方式，可以制造对于发射极突起部分的尖锐尖端具有优异的加工精度并且具有优异的均匀结构并且可以稳定地发射电流的冷电子发射器件。

5. 发明授权

US5469014A Field emission element 失效
标题翻译：场发射元件
公开(公告)号：US5469014A
公开(公告)日：1995-11-21
申请号：US829251
申请日：1992-02-03
申请人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J21/10 , H01J1/30
CPC分类号： H01J21/105 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J2201/30426
摘要： A field emission element including a gate and an emitter and capable of preventing any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.
摘要翻译：一种场致发射元件，包括栅极和发射极，并且能够防止在发射极的顶端上形成任何元素氧化物层，以防止发射电流降低，操作不稳定和噪声增加。栅极具有由氧键合强度高于发光体的至少尖端表面的材料的表面形成的表面，从而可以通过栅极上的吸附捕获氧原子和进入栅极的分子，以防止在发射体上形成任何氧化物层。当除尖端表面之外的发射体的一部分由氧结合强度高于尖端表面材料的材料形成时，在发射极的顶端表面上形成任何氧化物层都被最小化。

6. 发明授权

US6163107A Field emission cathode 失效
标题翻译：场发射阴极
公开(公告)号：US6163107A
公开(公告)日：2000-12-19
申请号：US37035
申请日：1998-03-09
申请人： Shigeo Itoh , Takahiro Niiyama , Masaharu Tomita , Yoshitaka Kagawa , Akira Inoue , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Takahiro Niiyama , Masaharu Tomita , Yoshitaka Kagawa , Akira Inoue , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/304 , G09G3/20 , G09G3/22 , H01J3/02 , H01J29/04 , H01J29/96 , H01J31/12 , H01J1/30
CPC分类号： H01J3/022 , G09G3/2011 , G09G3/22 , H01J2201/319 , H01J2329/00
摘要： A field emission cathode that can uniform the number of electrons emitted from each emitter and can prevent a line defect even when a gate electrode is electrically short-circuited with an emitter. The movement of electrons in a channel formed on the channel forming electrode is controlled by applying a positive voltage to the current control electrode, so that the current supplied from the cathode electrode to the emitter can be controlled. If the emitter is short-circuited with the gate electrode, the increased current density destroys the channel, so that the current supply to the emitter can be stopped.
摘要翻译：场发射阴极可以均匀化从每个发射极发射的电子数，并且即使当栅极与发射极电短路时也可以防止线路缺陷。通过向电流控制电极施加正电压来控制形成在沟道形成电极上的沟道中的电子的移动，从而可以控制从阴极供给到发射极的电流。如果发射极与栅电极短路，则增加的电流密度会破坏通道，从而可以停止对发射极的电流供应。

7. 发明授权

US5866438A Field emission type electron emitting device and method of producing the same 失效
标题翻译：场致发射型电子发射器件及其制造方法
公开(公告)号：US5866438A
公开(公告)日：1999-02-02
申请号：US59333
申请日：1998-04-14
申请人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
发明人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
IPC分类号： H01J1/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01L21/00
CPC分类号： H01J9/025 , H01J3/022
摘要： In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.
摘要翻译：在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极具有约55°的尖锐边缘，相对于底物。在圆锥形电子发射器件中，栅极由SOI晶片的单晶硅薄膜构成，从而在单晶硅衬底上形成由（111）面包围的金字塔。

8. 发明授权

US5793154A Field emission element 失效
公开(公告)号：US5793154A
公开(公告)日：1998-08-11
申请号：US481068
申请日：1995-06-07
申请人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J21/10 , H01J1/30
CPC分类号： H01J21/105 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J2201/30426
摘要： A field emission element including a gate and an emitter and capable of penting any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.

9. 发明授权

US5793153A Field emission type electron emitting device with convex insulating portions 失效
标题翻译：具有凸形绝缘部分的场发射型电子发射器件
公开(公告)号：US5793153A
公开(公告)日：1998-08-11
申请号：US512686
申请日：1995-08-08
申请人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
发明人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
IPC分类号： H01J1/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01L21/00 , H01J1/46 , H01J1/02 , H01J1/16 , H01J21/10
CPC分类号： H01J9/025 , H01J3/022
摘要： In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.
摘要翻译：在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极具有约55°的尖锐边缘，相对于底物。在圆锥形电子发射器件中，栅极由SOI晶片的单晶硅薄膜构成，从而在单晶硅衬底上形成由（111）面包围的金字塔。

10. 发明授权

US5710478A Field emitter having source, channel, and drain layers 失效
标题翻译：具有源极，沟道和漏极层的场致发射体
公开(公告)号：US5710478A
公开(公告)日：1998-01-20
申请号：US698260
申请日：1996-08-14
申请人： Seigo Kanemaru , Junji Itoh
发明人： Seigo Kanemaru , Junji Itoh
IPC分类号： H01J1/304 , H01J1/308 , H01J1/30 , H01J19/24
CPC分类号： H01J3/022 , H01J1/3042 , H01J1/308 , H01J2201/319
摘要： A field emission device of simple structure enables stabilization and control of field emission current. A three-dimensional emitter formed on a base member incorporates therein a source layer on the side in contact with the base member, a drain layer on the side of the distal end including a tip and a channel region layer between the source layer and the drain layer. A gate is formed near the emitter. A strong electric field generated by applying a voltage to the gate causes cold electrons to be emitted from the emitter tip and the voltage applied to the gate also controls the conductivity of the channel region layer, whereby the field emission current emitted from the tip of the emitter is stabilized and controlled.
摘要翻译：具有简单结构的场致发射器件可实现场发射电流的稳定和控制。形成在基底构件上的三维发射体在其中包括与基底构件接触的一侧的源极层，在远端侧的漏极层包括尖端和在源极层和漏极之间的沟道区域层层。在发射极附近形成栅极。通过向栅极施加电压产生的强电场使得发射极尖端发出冷电子，并且施加到栅极的电压也控制沟道区域层的导电性，从而从发射极稳定并受到控制。

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