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1. 发明授权

US5469014A Field emission element 失效
标题翻译：场发射元件
公开(公告)号：US5469014A
公开(公告)日：1995-11-21
申请号：US829251
申请日：1992-02-03
申请人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J21/10 , H01J1/30
CPC分类号： H01J21/105 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J2201/30426
摘要： A field emission element including a gate and an emitter and capable of preventing any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.
摘要翻译：一种场致发射元件，包括栅极和发射极，并且能够防止在发射极的顶端上形成任何元素氧化物层，以防止发射电流降低，操作不稳定和噪声增加。栅极具有由氧键合强度高于发光体的至少尖端表面的材料的表面形成的表面，从而可以通过栅极上的吸附捕获氧原子和进入栅极的分子，以防止在发射体上形成任何氧化物层。当除尖端表面之外的发射体的一部分由氧结合强度高于尖端表面材料的材料形成时，在发射极的顶端表面上形成任何氧化物层都被最小化。

2. 发明授权

US5793154A Field emission element 失效
公开(公告)号：US5793154A
公开(公告)日：1998-08-11
申请号：US481068
申请日：1995-06-07
申请人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J21/10 , H01J1/30
CPC分类号： H01J21/105 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J2201/30426
摘要： A field emission element including a gate and an emitter and capable of penting any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.

3. 发明授权

US5256936A Image display device 失效
标题翻译：图像显示装置
公开(公告)号：US5256936A
公开(公告)日：1993-10-26
申请号：US766071
申请日：1991-09-27
申请人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J3/02 , H01J31/12 , H01J17/49
CPC分类号： H01J3/022 , H01J31/127
摘要： An image display device capable of minutely setting the interval between an emitter (6) and a gate (5) with high accuracy and of being driven at a significantly reduced drive voltage with good emission uniformity. Each emitter (6) is provided in a recess in a substrate (2), so that the interval between the emitter (6) and a gate (5) is determined depending upon the thickness of the emitter (6). Thus, the interval can be readily controlled by adjusting or varying the period of time during which the film for the emitter (6) is formed, resulting in a micro-interval of the order of sub-microns between the two components being possible with high accuracy.
摘要翻译：一种图像显示装置，其能够以高精度精确地设置发射极（6）和栅极（5）之间的间隔，并以显着降低的驱动电压驱动，并具有良好的发射均匀性。每个发射器（6）设置在衬底（2）中的凹部中，使得发射极（6）和栅极（5）之间的间隔根据发射极（6）的厚度来确定。因此，可以通过调节或改变形成发射器（6）的膜的时间段来容易地控制间隔，导致两个部件之间的亚微米量级的微间隔可以高准确性。

4. 发明授权

US5637023A Field emission element and process for manufacturing same 失效
标题翻译：场致发射元件及其制造方法
公开(公告)号：US5637023A
公开(公告)日：1997-06-10
申请号：US271676
申请日：1994-07-07
申请人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J9/02 , H01J1/304 , H01J3/02 , H01J19/24 , H01J21/10 , H01J1/30
CPC分类号： H01J9/025 , H01J3/022
摘要： A field emission element features an emitter which has rectangular projections at its distal end capable of readily controlling the interval between electrodes in increments as small as sub-microns, in order to reduce the voltage at which the device starts field emission at the required level and to improve emission uniformity. An emitter (2,20), a collector (3,21) and a gate (5,22) are arranged on a substrate (1), which is formed with a recess (4) in proximity to the electrodes (2,3,20,21) other than the gate (5). The gate (5) is provided in the recess (4).
摘要翻译：场发射元件的特征在于在其远端具有矩形突起的发射极，其能够以小至亚微米的增量容易地控制电极之间的间隔，以便降低器件在所需电平下开始场发射的电压，以提高排放均匀性。发射极（2,20），集电极（3,21）和栅极（5,22）布置在衬底（1）上，衬底（1）上形成有靠近电极（2,3）的凹部，20,21），而不是门（5）。门（5）设置在凹部（4）中。

5. 发明授权

US5381069A Field emission element and process for manufacturing same 失效
标题翻译：场致发射元件及其制造方法
公开(公告)号：US5381069A
公开(公告)日：1995-01-10
申请号：US159114
申请日：1993-11-30
申请人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J9/02 , H01J1/304 , H01J3/02 , H01J19/24 , H01J21/10 , H01J19/02
CPC分类号： H01J9/025 , H01J3/022
摘要： A field emission element in which the emitter has rectangular projections at its distal end capable of readily controlling the interval between electrodes in increments as small as sub-microns, in order to reduce the voltage at which the device starts field emission at the required level and to improve emission uniformity. An emitter (2,20), a collector (3,21) and a gate (5,22) are arranged on a substrate (1), which is formed with a recess (4) in proximity to the electrodes (2,3, 20,21) other than the gate (5). The gate (5) is provided in the recess (4).
摘要翻译：场致发射元件，其中发射器在其远端具有矩形突起，能够以小到亚微米的增量容易地控制电极之间的间隔，以便降低器件在所需电平下开始场发射的电压，以及以提高排放均匀性。发射极（2,20），集电极（3,21）和栅极（5,22）布置在衬底（1）上，衬底（1）上形成有靠近电极（2,3）的凹部，20,21），而不是门（5）。门（5）设置在凹部（4）中。

6. 发明授权

US5612587A Field emission cathode 失效
标题翻译：场发射阴极
公开(公告)号：US5612587A
公开(公告)日：1997-03-18
申请号：US438082
申请日：1995-05-08
申请人： Shigeo Itoh , Teruo Watanabe , Kazuhiko Tsuburaya , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Kazuhiko Tsuburaya , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/30 , H01J1/304 , H01J1/02
CPC分类号： H01J1/3042
摘要： A field emission cathode capable of reducing an operation voltage and substantially preventing damage of an emitter. An emitter is provided on a substrate. The emitter includes a base and a plurality of rectangular tips projecting from the base. A gate is arranged in a recess formed on the substrate so as to be in proximity to the emitter. A width a of the tips of the emitter and an interval b between the tips are defined to satisfy a relationship of b/a=2. This permits an electric field strength applied to the tips of the emitter to be substantially increased as compared in a conventional field emission cathode of b/a.ltoreq.1, resulting in an operation voltage being reduced and a sufficient amount of emitter current being produced.
摘要翻译：能够降低工作电压并且基本上防止发射体损坏的场致发射阴极。在基板上设置发射极。发射器包括基部和从基部突出的多个矩形尖端。栅极被布置在形成在衬底上的凹部中以便靠近发射极。发射极尖端的宽度a和尖端之间的间隔b被定义为满足b / a = 2的关系。与传统的b / a 1的场致发射阴极相比，这允许施加到发射极的尖端的电场强度显着增加，导致工作电压降低并产生足够量的发射极电流。

7. 发明授权

US6163107A Field emission cathode 失效
标题翻译：场发射阴极
公开(公告)号：US6163107A
公开(公告)日：2000-12-19
申请号：US37035
申请日：1998-03-09
申请人： Shigeo Itoh , Takahiro Niiyama , Masaharu Tomita , Yoshitaka Kagawa , Akira Inoue , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Takahiro Niiyama , Masaharu Tomita , Yoshitaka Kagawa , Akira Inoue , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/304 , G09G3/20 , G09G3/22 , H01J3/02 , H01J29/04 , H01J29/96 , H01J31/12 , H01J1/30
CPC分类号： H01J3/022 , G09G3/2011 , G09G3/22 , H01J2201/319 , H01J2329/00
摘要： A field emission cathode that can uniform the number of electrons emitted from each emitter and can prevent a line defect even when a gate electrode is electrically short-circuited with an emitter. The movement of electrons in a channel formed on the channel forming electrode is controlled by applying a positive voltage to the current control electrode, so that the current supplied from the cathode electrode to the emitter can be controlled. If the emitter is short-circuited with the gate electrode, the increased current density destroys the channel, so that the current supply to the emitter can be stopped.
摘要翻译：场发射阴极可以均匀化从每个发射极发射的电子数，并且即使当栅极与发射极电短路时也可以防止线路缺陷。通过向电流控制电极施加正电压来控制形成在沟道形成电极上的沟道中的电子的移动，从而可以控制从阴极供给到发射极的电流。如果发射极与栅电极短路，则增加的电流密度会破坏通道，从而可以停止对发射极的电流供应。

8. 发明授权

US06409565B1 Reduced voltage field emission cathode and method for manufacturing same 失效
标题翻译：降低电场发射阴极及其制造方法
公开(公告)号：US06409565B1
公开(公告)日：2002-06-25
申请号：US09317864
申请日：1999-05-25
申请人： Shigeo Itoh , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J900
CPC分类号： H01J9/025
摘要： A field emission cathode capable of emitting electrons under a low voltage. Lead-out electrodes are formed on an insulating layer and openings are formed at a lamination between the insulating layer and each of the lead-out electrodes. Emitters each are arranged in each of the openings. The insulating layer is provided on a lower surface thereof with a photoresist layer modified by heating. The modified photoresist layer is electrically connected through a resistive layer to a cathode electrode. The cathode electrode is formed in a pattern on a cathode substrate made of glass or the like. The emitters each are constituted by a distal end of each of projections of the modified photoresist layer exposed from the insulating layer. The photoresist is modified by heating, resulting in being provided with electrical conductivity and exhibiting stable electron emitting characteristics under a low voltage.
摘要翻译：能够在低电压下发射电子的场发射阴极。引出电极形成在绝缘层上，并且在绝缘层和每个引出电极之间的叠层处形成开口。发射器各自布置在每个开口中。绝缘层在其下表面上设置有通过加热改性的光致抗蚀剂层。改性光致抗蚀剂层通过电阻层电连接到阴极电极。在由玻璃等制成的阴极基板上形成阴极电极。发射体各自由从绝缘层露出的改性光致抗蚀剂层的每个突起的远端构成。通过加热改性光致抗蚀剂，从而提供导电性并在低电压下表现出稳定的电子发射特性。

9. 发明授权

US5847408A Field emission device 失效
标题翻译：场发射装置
公开(公告)号：US5847408A
公开(公告)日：1998-12-08
申请号：US824016
申请日：1997-03-21
申请人： Seigo Kanemaru , Junji Itoh
发明人： Seigo Kanemaru , Junji Itoh
IPC分类号： H01J3/02 , H01L29/06
CPC分类号： H01J3/022 , H01J2201/319
摘要： A field emission device of simple structure enables stabilization and control of field emission current. Emission current is controlled by a plurality of control voltage systems. An emitter having a sharp tip is fabricated by processing a p-type semiconductor substrate, and an n-type source region is provided on the p-type semiconductor substrate surface at a position that is laterally separated from the emitter. An electrode layer having an aperture facing the apex portion of the emitter is provided on an insulating layer, the electrode layer extending to above the n-type source region. Voltage applied to the electrode layer to apply an extractor field to the apex portion of the emitter and to induce inversion layers at the emitter surface and the surface of the p-type semiconductor substrate. The electrode layer is divided into a plurality of electrodes. An extraction voltage is applied to one of these electrodes closest to the emitter, another electrode is connected to an X selection line and another to a Y selection line, thereby controlling emission current.
摘要翻译：具有简单结构的场致发射器件可实现场发射电流的稳定和控制。发射电流由多个控制电压系统控制。通过处理p型半导体衬底制造具有尖锐尖端的发射极，并且在与发射极横向分离的位置处在p型半导体衬底表面上设置n型源极区。具有面向发射极顶点的孔的电极层设置在绝缘层上，电极层延伸到n型源极区域的上方。电压施加到电极层，以将提取器场施加到发射极的顶点，并在p型半导体衬底的发射极表面和表面处诱导反转层。电极层被分成多个电极。将提取电压施加到最靠近发射极的这些电极之一，另一个电极连接到X选择线，而另一个电极连接到Y选择线，从而控制发射电流。

10. 发明授权

US5780318A Cold electron emitting device and method of manufacturing same 失效
标题翻译：冷电子发射器件及其制造方法
公开(公告)号：US5780318A
公开(公告)日：1998-07-14
申请号：US701866
申请日：1996-08-23
申请人： Takayuki Hirano , Junji Itoh , Seigo Kanemaru
发明人： Takayuki Hirano , Junji Itoh , Seigo Kanemaru
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02 , H01L21/28 , H01L29/06
CPC分类号： H01J1/3042 , H01J9/025
摘要： A cold electron emitting device has an emitter base portion, an emitter projection portion and a source region, each of which is an n-type semiconductor, formed on a p-type silicon substrate. A metal film which serves as an extraction electrode and a gate electrode of FET is formed via an insulating layer on the region of the substrate which includes the peripheral regions of the emitter base portion and source region. This cold electron emitting device can be manufactured as follows. First, a conical emitter having an emitter projection portion and emitter base portion and a source region are formed on a p-type semiconductor substrate. Next, an insulating layer and a metal film, which becomes an extraction electrode and a gate electrode of FET, is formed on the substrate which includes peripheral regions of the emitter base portion and source region. Then, an n-type impurity is doped in the emitter and the source region to form an n-type emitter and an n-type source region. In this manner, it is possible to manufacture a cold electron emitting device, which has an excellent work precision for the sharp tip of the emitter projection portion and an excellent uniform structure and can stably emit a current.
摘要翻译：冷电子发射器件具有形成在p型硅衬底上的发射极基极部分，发射极突出部分和源极区域，每个都是n型半导体。用作引出电极的金属膜和FET的栅极通过绝缘层在基板的包含发射极基部和源极区的外围区域的区域上形成。该冷电子发射器件可以如下制造。首先，在p型半导体基板上形成具有发射极投射部和发射极基部以及源极区的锥形发射体。接下来，在包括发射极基部和源极区的周边区域的基板上形成作为FET的引出电极和栅电极的绝缘层和金属膜。然后，在发射极和源极区域中掺杂n型杂质以形成n型发射极和n型源极区。以这种方式，可以制造对于发射极突起部分的尖锐尖端具有优异的加工精度并且具有优异的均匀结构并且可以稳定地发射电流的冷电子发射器件。

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