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1. 发明授权

US5793153A Field emission type electron emitting device with convex insulating portions 失效
标题翻译：具有凸形绝缘部分的场发射型电子发射器件
公开(公告)号：US5793153A
公开(公告)日：1998-08-11
申请号：US512686
申请日：1995-08-08
申请人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
发明人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
IPC分类号： H01J1/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01L21/00 , H01J1/46 , H01J1/02 , H01J1/16 , H01J21/10
CPC分类号： H01J9/025 , H01J3/022
摘要： In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.
摘要翻译：在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极具有约55°的尖锐边缘，相对于底物。在圆锥形电子发射器件中，栅极由SOI晶片的单晶硅薄膜构成，从而在单晶硅衬底上形成由（111）面包围的金字塔。

2. 发明授权

US5866438A Field emission type electron emitting device and method of producing the same 失效
标题翻译：场致发射型电子发射器件及其制造方法
公开(公告)号：US5866438A
公开(公告)日：1999-02-02
申请号：US59333
申请日：1998-04-14
申请人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
发明人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
IPC分类号： H01J1/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01L21/00
CPC分类号： H01J9/025 , H01J3/022
摘要： In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.
摘要翻译：在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极具有约55°的尖锐边缘，相对于底物。在圆锥形电子发射器件中，栅极由SOI晶片的单晶硅薄膜构成，从而在单晶硅衬底上形成由（111）面包围的金字塔。

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