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1. 发明授权

US5793153A Field emission type electron emitting device with convex insulating portions 失效
标题翻译：具有凸形绝缘部分的场发射型电子发射器件
公开(公告)号：US5793153A
公开(公告)日：1998-08-11
申请号：US512686
申请日：1995-08-08
申请人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
发明人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
IPC分类号： H01J1/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01L21/00 , H01J1/46 , H01J1/02 , H01J1/16 , H01J21/10
CPC分类号： H01J9/025 , H01J3/022
摘要： In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.
摘要翻译：在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极具有约55°的尖锐边缘，相对于底物。在圆锥形电子发射器件中，栅极由SOI晶片的单晶硅薄膜构成，从而在单晶硅衬底上形成由（111）面包围的金字塔。

2. 发明授权

US5972768A Method of manufacturing semiconductor device having low contact resistance 失效
标题翻译：具有低接触电阻的半导体器件的制造方法
公开(公告)号：US5972768A
公开(公告)日：1999-10-26
申请号：US803193
申请日：1997-02-19
申请人： Yoshihiko Nagayasu , Tatsuhiko Fujihira , Kazutoshi Sugimura , Yoichi Ryokai
发明人： Yoshihiko Nagayasu , Tatsuhiko Fujihira , Kazutoshi Sugimura , Yoichi Ryokai
IPC分类号： H01L21/28 , H01L21/265 , H01L21/266 , H01L21/336 , H01L29/78 , H01L21/331
CPC分类号： H01L29/66712 , H01L21/266
摘要： In a method of manufacturing a semiconductor device, an insulating film is formed on a surface of a p-type semiconductor region, and then removed from a selected portion of the p-type semiconductor region. An n-type region having a high concentration of arsenic atoms is formed in a surface layer of the selected portion of the p-type semiconductor region from which the insulating film is removed. Subsequently, boron ions are implanted over an entire surface of the device in a concentration that is lower than that of the n-type region and higher than that of the p-type semiconductor region, to a smaller depth than that of the n-type region, and heat treatment is then effected to form a high-concentration boron diffused region in a surface layer of the p-type semiconductor region. An insulating film on the n-type region and an insulating film on the boron diffused region are selectively removed, and a metallic film is formed on an exposed surface of the n-type region and an exposed surface of the boron diffused region.
摘要翻译：在制造半导体器件的方法中，在p型半导体区域的表面上形成绝缘膜，然后从p型半导体区域的选定部分去除。在除去绝缘膜的p型半导体区域的选定部分的表面层中形成具有高浓度砷原子的n型区域。随后，在器件的整个表面上以比n型区域低的浓度注入硼离子，并将其高于p型半导体区域，其深度比n型区域，然后进行热处理，以在p型半导体区域的表面层中形成高浓度硼扩散区域。选择性地除去n型区域上的绝缘膜和硼扩散区域上的绝缘膜，并且在n型区域的暴露表面和硼扩散区域的暴露表面上形成金属膜。

3. 发明授权

US5866438A Field emission type electron emitting device and method of producing the same 失效
标题翻译：场致发射型电子发射器件及其制造方法
公开(公告)号：US5866438A
公开(公告)日：1999-02-02
申请号：US59333
申请日：1998-04-14
申请人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
发明人： Junji Itoh , Takahiko Uematsu , Yoichi Ryokai , Masato Nishizawa , Kazuo Matsuzaki
IPC分类号： H01J1/30 , H01J1/304 , H01J3/02 , H01J9/02 , H01L21/00
CPC分类号： H01J9/025 , H01J3/022
摘要： In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.
摘要翻译：在梳状或楔形电子发射器件中，从SOI晶片的单晶硅薄膜处理发射极或发射极和阳极两者。去除处理部分以外的部分中的单晶硅薄膜，使得氧化硅层进一步略微下降。用于施加电场以便将电子从发射极引出的栅电极设置在所述挖空部分中。当在单晶硅薄膜取向为（100）面的条件下，通过各向异性蚀刻将发射极的端面和侧面形成为（111）面时，发射极具有约55°的尖锐边缘，相对于底物。在圆锥形电子发射器件中，栅极由SOI晶片的单晶硅薄膜构成，从而在单晶硅衬底上形成由（111）面包围的金字塔。

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