专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080145556A1 METHOD FOR MANUFACTURING SUBSTRATE MOUNTING TABLE 审中-公开
标题翻译：制造基板安装表的方法
公开(公告)号：US20080145556A1
公开(公告)日：2008-06-19
申请号：US11954826
申请日：2007-12-12
申请人： Nobuyuki NAGAYAMA , Takehiro Ueda , Yoshiyuki Kobayashi , Kaoru Oohashi
发明人： Nobuyuki NAGAYAMA , Takehiro Ueda , Yoshiyuki Kobayashi , Kaoru Oohashi
IPC分类号： B05D1/08
CPC分类号： C23C16/4581 , C23C4/01 , C23C4/02 , C23C16/4404 , C23C16/46 , C23C16/466
摘要： A method for manufacturing a substrate mounting table having a mounting surface for mounting a substrate thereon; a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface; a gas supply channel for supplying a gas to the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface is provided. The method includes forming a removable film at least on inner wall portions of the gas supply channel facing the gas injection openings; forming the thermally sprayed ceramic layer on the mounting surface; and removing the film.
摘要翻译：一种用于制造具有用于在其上安装基板的安装表面的基板安装台的方法; 多个气体注入口，其在所述安装面上开口，向所述安装面供给气体; 用于向气体注入口供给气体的气体供给通道; 并且提供覆盖安装表面的热喷涂陶瓷层。该方法包括至少在面向气体注入开口的气体供应通道的内壁部分上形成可移除膜; 在所述安装表面上形成所述热喷涂陶瓷层; 并去除胶片。

2. 发明申请

US20080115725A1 THERMAL SPRAY POWDER, METHOD FOR FORMING THERMAL SPRAY COATING, AND PLASMA RESISTANT MEMBER 有权
标题翻译：热喷涂粉末，形成热喷涂法的方法和等离子体阻燃剂
公开(公告)号：US20080115725A1
公开(公告)日：2008-05-22
申请号：US11931675
申请日：2007-10-31
申请人： Hiroyuki IBE , Isao AOKI , Junya KITAMURA , Hiroaki MIZUNO , Yoshiyuki KOBAYASHI , Nobuyuki NAGAYAMA
发明人： Hiroyuki IBE , Isao AOKI , Junya KITAMURA , Hiroaki MIZUNO , Yoshiyuki KOBAYASHI , Nobuyuki NAGAYAMA
IPC分类号： C23C4/08 , B32B5/16 , B05C11/11
CPC分类号： C23C4/10 , C23C4/11 , C23C4/12 , Y10T428/2982
摘要： A thermal spray powder contains granulated and sintered particles composed of an oxide of any of the rare earth elements having an atomic number from 60 to 70. The average particle size of the primary particles constituting the granulated and sintered particles is 2 to 10 μm. The crushing strength of the granulated and sintered particles is 7 to 50 MPa. A plasma resistant member includes a substrate and a thermal spray coating provided on the surface of the substrate. The thermal spray coating is formed by thermal spraying, preferably plasma thermal spraying, the thermal spray powder.
摘要翻译：热喷雾粉末含有由原子序数为60〜70的任何一种稀土元素的氧化物构成的粒状烧结颗粒。构成造粒烧结颗粒的一次粒子的平均粒径为2〜10μm。造粒烧结颗粒的抗压强度为7〜50MPa。等离子体阻挡构件包括衬底和设置在衬底表面上的热喷涂层。热喷涂通过热喷涂形成，优选等离子体热喷涂，热喷涂粉末。

3. 发明申请

US20120073753A1 ELECTRODE PLATE FOR PLASMA ETCHING AND PLASMA ETCHING APPARATUS 有权
标题翻译：用于等离子体蚀刻和等离子体蚀刻装置的电极板
公开(公告)号：US20120073753A1
公开(公告)日：2012-03-29
申请号：US13245194
申请日：2011-09-26
申请人： Naoyuki SATOH , Nobuyuki NAGAYAMA , Keiichi NAGAKUBO
发明人： Naoyuki SATOH , Nobuyuki NAGAYAMA , Keiichi NAGAKUBO
IPC分类号： C23F1/08
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/505 , C23C16/509 , H01J37/32009 , H01J37/3244 , H01J37/32541
摘要： An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.
摘要翻译：将等离子体蚀刻用电极板形成为具有规定厚度的盘状，在多个同心圆的不同圆周上设置贯穿电极板表面垂直的表面的多个气孔，电极板为在电极板的径向方向分成两个或更多个区域，设置在两个或更多个区域中的气孔的类型通过区域彼此不同。

4. 发明申请

US20090294064A1 FOCUS RING AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：聚焦环和等离子体加工设备
公开(公告)号：US20090294064A1
公开(公告)日：2009-12-03
申请号：US12473707
申请日：2009-05-28
申请人： Nobuyuki NAGAYAMA
发明人： Nobuyuki NAGAYAMA
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32623
摘要： A focus ring that can eliminate the gap between a mounting stage and the focus ring in a plasma processing apparatus to prevent damage to a side wall of the mounting stage of a plasma processing apparatus and attachment of particles to a substrate to be processed resulting from spread of plasma. The focus ring has an annular shape and is provided in an outer peripheral edge portion of an upper surface of the mounting stage. The focus ring is comprised of a combination of a plurality of focus ring pieces formed by dividing the focus ring in a circumferential direction of the annular shape, and an annular band member that urges each of the focus ring pieces toward a center of the focus ring.
摘要翻译：一种聚焦环，其能够消除等离子体处理装置中的安装台和聚焦环之间的间隙，以防止损坏等离子体处理装置的安装台的侧壁并且将粒子附着到待处理的基板上，从而产生扩散的等离子体。聚焦环具有环形形状，并且设置在安装台的上表面的外周边缘部分中。聚焦环由多个聚焦环组合而成，该多个聚焦环是通过沿着圆周方向的圆周方向分割聚焦环而形成的环形带构件，其将每个聚焦环朝向聚焦环的中心。

5. 发明申请

US20080196744A1 In-chamber member, a cleaning method therefor and a plasma processing apparatus 有权
标题翻译：腔内构件，其清洁方法和等离子体处理装置
公开(公告)号：US20080196744A1
公开(公告)日：2008-08-21
申请号：US12061488
申请日：2008-04-02
申请人： Nobuyuki NAGAYAMA , Kouji Mitsuhashi , Hiroyuki Nakayama
发明人： Nobuyuki NAGAYAMA , Kouji Mitsuhashi , Hiroyuki Nakayama
IPC分类号： B08B7/00
CPC分类号： C23C16/4405 , C23C16/4404
摘要： An in-chamber member to use in the chamber of a plasma processing vessel has a coating film formed by a coating agent. The in-chamber member having deposits formed on the coating film is separated from the chamber and is immersed into a peeling solvent, e.g., acetone. Since the coating agent is made of a resist formed of a main component of, e.g., cyclized rubber-bisazide and a photosensitive component, the deposits can be separated from the in-chamber member together with the coating film being separated.
摘要翻译：在等离子体处理容器的室中使用的室内部件具有由涂布剂形成的涂膜。具有在涂膜上形成的沉积物的室内部件与室分离并浸入剥离溶剂例如丙酮中。由于涂层剂由例如环化橡胶 - 双叠氮化合物和感光组分的主要组分形成的抗蚀剂制成，所以沉积物可以与被分离的涂膜一起从腔室内部件分离出来。

6. 发明申请

US20120258258A1 METHOD OF REUSING A CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS 有权
标题翻译：在等离子体加工设备中使用消耗部件的方法
公开(公告)号：US20120258258A1
公开(公告)日：2012-10-11
申请号：US13524895
申请日：2012-06-15
申请人： Nobuyuki NAGAYAMA , Naoyuki SATOH , Keiichi NAGAKUBO , Kazuya NAGASEKI
发明人： Nobuyuki NAGAYAMA , Naoyuki SATOH , Keiichi NAGAKUBO , Kazuya NAGASEKI
IPC分类号： C23C16/02 , C23C16/48
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.
摘要翻译：重复使用等离子体处理装置中的消耗部件的方法包括清洁由特定时间段内进行的第一等离子体处理而被SiC腐蚀的消耗部件的表面。该方法还包括通过CVD在被蚀刻的消耗部件的清洁的表面上沉积SiC。该方法还包括通过使用再制造的可消耗部件对基板上的第二等离子体处理进行第二等离子体处理，对其上沉积有SiC的侵蚀的消耗部件进行加工，从而重新制造具有预定形状的消耗部件。

7. 发明申请

US20120111500A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120111500A1
公开(公告)日：2012-05-10
申请号：US13290440
申请日：2011-11-07
申请人： Nobuyuki NAGAYAMA , Eiichiro KIKUCHI
发明人： Nobuyuki NAGAYAMA , Eiichiro KIKUCHI
IPC分类号： C23F1/08 , C23C16/458 , C23C16/50 , C23C16/455
CPC分类号： H01L21/67069 , H01J37/32642 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6831
摘要： The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.
摘要翻译：等离子体处理装置包括：处理室，其内部气密地关闭; 处理气体供给机构，其将处理气体供给到处理室中; 排气机构，其排出处理室的内部; 等离子体发生机构，其从处理气体产生等离子体; 保持台，设置在处理室中，并且构造成使得被处理基板和设置成围绕被处理基板的聚焦环保持在同一平面上; 温度控制机构，其调节保持台的温度; 以及静电卡盘，其设置在保持台的顶面上，并且包括延伸到聚焦环下方的部分的吸附电极。

8. 发明申请

US20100314356A1 METHOD OF REUSING A CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS 有权
标题翻译：在等离子体加工设备中使用消耗部件的方法
公开(公告)号：US20100314356A1
公开(公告)日：2010-12-16
申请号：US12813819
申请日：2010-06-11
申请人： Nobuyuki NAGAYAMA , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
发明人： Nobuyuki NAGAYAMA , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
IPC分类号： B44C1/22
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.
摘要翻译：在重新使用等离子体处理装置中的消耗部件的方法中，通过化学气相沉积（CVD）沉积SiC形成碳化硅（SiC）块，并且通过将等离子体处理装置的消耗部件 SiC块，该消耗部件具有预定的形状。通过使用制造的消耗部件在基板上进行第一等离子体处理。已经被等离子体处理侵蚀的可消耗部件的表面经过一段干净的处理一段时间。通过CVD将SiC沉积在被腐蚀的消耗部件的清洁表面上。具有预定形状的消耗部件通过处理具有沉积SiC的表面的侵蚀的消耗部件来再制造。通过使用再制造的消耗部件在基板上进行第二等离子体处理。

9. 发明申请

US20120160808A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20120160808A1
公开(公告)日：2012-06-28
申请号：US13332986
申请日：2011-12-21
申请人： Eiichiro KIKUCHI , Nobuyuki NAGAYAMA , Takahiro MIYAI
发明人： Eiichiro KIKUCHI , Nobuyuki NAGAYAMA , Takahiro MIYAI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32165 , H01J37/32724 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.
摘要翻译：一种基板处理装置，包括：保持台，其包括具有保持晶片的基板保持面的基座和保持有聚焦环的聚焦环保持面; 静电卡盘，其将晶片的后表面静电吸附到基板保持面，并将聚焦环的后表面静电吸附到聚焦环保持面; 以及传热气体供给机构，其中所述传热气体供给机构独立地提供向所述基板的后表面供给第一传热气体的第一传热气体供给单元和向所述第二传热气体供给单元供给第二热传递气体到聚焦环的后表面。

10. 发明申请

US20110006037A1 SURFACE PROCESSING METHOD 有权
标题翻译：表面处理方法
公开(公告)号：US20110006037A1
公开(公告)日：2011-01-13
申请号：US12833406
申请日：2010-07-09
申请人： Naoyuki SATOH , Nobuyuki NAGAYAMA , Keiichi NAGAKUBO
发明人： Naoyuki SATOH , Nobuyuki NAGAYAMA , Keiichi NAGAKUBO
IPC分类号： B44C1/22
CPC分类号： C23C8/36 , C23C8/80 , C23C16/325 , C23C16/4404 , C23C16/56 , H01J2237/31
摘要： In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.
摘要翻译：在用于处理由碳化硅（SiC）制成的并且在其表面上具有碎裂层的构件的表面的表面处理方法中，具有碎裂层的构件的表面被修改为致密层以减少颗粒的数量当构件被施加到等离子体处理装置时从构件的表面产生。这里，通过加热碎片层使构件表面的SiC再结晶。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式