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1. 发明授权

US07625494B2 Plasma etching method and plasma etching unit 失效
标题翻译：等离子体蚀刻方法和等离子体蚀刻单元
公开(公告)号：US07625494B2
公开(公告)日：2009-12-01
申请号：US10860152
申请日：2004-06-04
申请人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
IPC分类号： H01L21/00 , B23K10/00 , H05H1/18
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

2. 发明授权

US07473377B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07473377B2
公开(公告)日：2009-01-06
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： B44C1/22
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括制备其表面上具有有机层的工艺对象的步骤，以及用H 2等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

3. 发明授权

US07470998B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07470998B2
公开(公告)日：2008-12-30
申请号：US11373154
申请日：2006-03-13
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L23/84 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

4. 发明申请

US20080314564A1 TEMPERATURE CONTROL DEVICE 审中-公开
标题翻译：温度控制装置
公开(公告)号：US20080314564A1
公开(公告)日：2008-12-25
申请号：US12110225
申请日：2008-04-25
申请人： Kazuya NAGASEKI , Yoshiyuki KOBAYASHI , Koichi MURAKAMI , Ryo NONAKA , Yoshihisa SUDOH , Hiroshi ITAFUJI , Norio KOKUBO
发明人： Kazuya NAGASEKI , Yoshiyuki KOBAYASHI , Koichi MURAKAMI , Ryo NONAKA , Yoshihisa SUDOH , Hiroshi ITAFUJI , Norio KOKUBO
IPC分类号： F28D15/00
CPC分类号： G05D23/19
摘要： A temperature control device controls the temperature of a controlled object by circulating a fluid in a temperature adjustment unit arranged near the controlled object. The temperature control device comprises a heating pathway that heats and circulates the fluid in the temperature adjustment unit, a cooling pathway that cools and circulates the fluid in the temperature adjustment unit, a bypass pathway that does not pass the fluid through the heating pathway and cooling pathway, but circulates the fluid in the temperature adjustment unit, and adjustment means that adjust a flow ratio of the fluid that is supplied from the heating pathway, cooling pathway, and bypass pathway to the temperature adjustment unit via a confluence unit that combines these flows. The adjustment means are provided on a downstream side of each of the heating pathway, the cooling pathway, and the bypass pathway and on the upstream side of the confluence unit.
摘要翻译：温度控制装置通过在布置在受控对象附近的温度调节单元中循环流体来控制受控物体的温度。温度控制装置包括加热和循环温度调节单元中的流体的加热通道，使温度调节单元中的流体冷却和循环的冷却通道，不通过流体通过加热通道和冷却的旁路通路使温度调节单元中的流体循环，以及调节装置，其通过组合这些流量的汇流单元，将从加热通路，冷却通路和旁路通路供给的流体的流量比调整到温度调节单元。调节装置设置在每个加热通道，冷却通道和旁路通路的下游侧以及汇流单元的上游侧。

5. 发明申请

US20080149598A1 SUBSTRATE PROCESSING APPARATUS, FOCUS RING HEATING METHOD, AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板加工装置，聚焦加热方法和基板加工方法
公开(公告)号：US20080149598A1
公开(公告)日：2008-06-26
申请号：US11950773
申请日：2007-12-05
申请人： Daisuke HAYASHI , Kazuya Nagaseki
发明人： Daisuke HAYASHI , Kazuya Nagaseki
IPC分类号： C23F1/00 , C23F1/08 , H05B6/38
CPC分类号： H01L21/68735 , H01J37/32522 , H01J37/32642 , H01J37/32706 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H05B6/105
摘要： A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular focus ring is mounted on the mounting stage in such a manner as to surround the peripheral portion of the mounted wafer. The pressure in the housing chamber is reduced, radio frequency electrical power is applied to the mounting stage, and the focus ring generates heat by itself.
摘要翻译：一种基板处理装置，其可以在施加射频电力的同时，不会引起异常放电和射频电力的反向流动而精确地控制聚焦环的温度。晶片安装在设置在容纳室中的安装台上。环形聚焦环以围绕安装晶片的周边部分的方式安装在安装台上。容纳室中的压力减小，射频电力施加到安装台，并且聚焦环自身产生热量。

6. 发明申请

US20070193062A1 SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM 有权
标题翻译：基板处理系统，基板处理方法和存储介质
公开(公告)号：US20070193062A1
公开(公告)日：2007-08-23
申请号：US11671821
申请日：2007-02-06
申请人： Tsuyoshi MORIYA , Kazuya Nagaseki
发明人： Tsuyoshi MORIYA , Kazuya Nagaseki
IPC分类号： F26B3/00
CPC分类号： H01L21/67028 , H01L21/67017 , H01L21/68707
摘要： A substrate processing method for a substrate processing system comprising at least a substrate processing apparatus that subjects a substrate to processing, and a substrate transferring apparatus having a transferring device that transfers the substrate, which enables the yield to be increased without bringing about a decrease in the throughput. The substrate processing method comprises a jetting step of jetting a high-temperature gas onto at least one of the transferring device and the substrate transferred by the transferring device.
摘要翻译：一种用于基板处理系统的基板处理方法，其至少包括使基板进行处理的基板处理装置，以及具有转印基板的转印装置的基板转印装置，其能够提高成品率而不会降低吞吐量。基板处理方法包括将高温气体喷射到转印装置和由转印装置转印的基板中的至少一个上的喷射工序。

7. 发明申请

US20060255447A1 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US20060255447A1
公开(公告)日：2006-11-16
申请号：US11487516
申请日：2006-07-17
申请人： Kazuya Nagaseki , Takanori Mimura , Hiroki Miyajima
发明人： Kazuya Nagaseki , Takanori Mimura , Hiroki Miyajima
IPC分类号： H01L23/48
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
摘要翻译：一种蚀刻方法，用于在被蚀刻的物体（212）中形成具有毫米级的开口尺寸（R）的凹部（220），例如半导体晶片。在物体（212）上形成具有对应于凹部（220）的开口的面罩（214）。将具有掩模（214）的物体（212）放置在用于等离子体蚀刻的处理容器中，并使用等离子体蚀刻在其中。掩模（214）的开口周围部分的材料与物体（212）的材料（例如硅）相同。因此，凹部（220）可以形成为不形成基本上在底部（222）中形成副沟槽形状（通过蚀刻其周边比中心更深的形状形成的形状）。

8. 发明申请

US20060243389A1 Substrate processing apparatus and method, and program and storage medium 有权
标题翻译：基板处理装置和方法以及程序和存储介质
公开(公告)号：US20060243389A1
公开(公告)日：2006-11-02
申请号：US11410120
申请日：2006-04-25
申请人： Yusuke Hirayama , Kazuya Nagaseki
发明人： Yusuke Hirayama , Kazuya Nagaseki
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01J37/321 , H01J37/32623 , H01L21/3065
摘要： A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.
摘要翻译：基板处理装置包括面向基板的等离子体源和设置在基板和等离子体源之间的屏蔽部件。等离子体源径向漫射等离子体，屏蔽构件具有通孔，通过该通孔使一部分径向扩散的等离子体通过。使用基板处理方法在基板处理装置中对基板进行等离子体处理，所述基板处理装置包括面向基板的等离子体源和设置在等离子体源与基板之间的屏蔽部件。屏蔽构件具有通孔。该方法包括通过等离子体源径向漫射等离子体的步骤。

9. 发明授权

US07022616B2 High speed silicon etching method 有权
标题翻译：高速硅蚀刻法
公开(公告)号：US07022616B2
公开(公告)日：2006-04-04
申请号：US10380428
申请日：2001-09-13
申请人： Takanori Mimura , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa
发明人： Takanori Mimura , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa
IPC分类号： H01L21/302
CPC分类号： H01L21/32137 , H01J37/32082 , H01J37/32091 , H01J37/32165 , H01J37/3266 , H01J2237/3347 , H01L21/3065 , H01L21/3081
摘要： This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.
摘要翻译：本发明提供以下高速硅蚀刻方法。具有硅区域的待处理物体W被设定为与可以保持在真空中的处理室中的处理空间接触。将蚀刻气体引入工艺空间，形成气压为13Pa〜1333Pa（100mTorr〜10Torr）的气体气氛。在施加RF功率时产生等离子体。在等离子体中，离子的带电粒子数和自由基的数量之和增加，并且以比常规蚀刻更高的速度进行硅区的蚀刻。

10. 发明申请

US20060027530A1 Etching gas, etching method and etching gas evaluation method 有权
标题翻译：蚀刻气体，蚀刻方法和蚀刻气体评估方法
公开(公告)号：US20060027530A1
公开(公告)日：2006-02-09
申请号：US11199085
申请日：2005-08-09
申请人： Masanobu Honda , Akinori Kitamura , Kazuya Nagaseki
发明人： Masanobu Honda , Akinori Kitamura , Kazuya Nagaseki
IPC分类号： C03C25/68 , C09K13/08
CPC分类号： C03C15/00 , C03C17/23 , C03C2217/213 , C03C2218/33 , C09K13/08
摘要： An etching gas for etching an oxide film formed on a substrate, includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a straight-chain saturated fluorocarbon-based gas expressed by CxF(2x+2) (x represents a natural number of 5 or larger). The additive gas is C5F12 gas, C6F14 gas or C7F16 gas. Another etching gas includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a cyclic saturated fluorocarbon-based gas expressed by CxF2x(x represents a natural number of 5 or larger). In this case, the additive gas is C5F10gas or C6F12 gas.
摘要翻译：用于蚀刻形成在基板上的氧化膜的蚀刻气体包括由不饱和氟烃类气体构成的主气体; 和由C x2（2x + 2）表示的直链饱和碳氟化合物气体（x表示5以上的自然数）构成的添加气体，。添加气体是C 5 F 12 C 12气体，C 6 F 14气体或C 7 H 12气体， 16气体。另一蚀刻气体包括由不饱和氟烃基气体组成的主气体; 和由C x 2 F 2 X x表示的环状饱和碳氟化合物气体构成的添加气体（x表示5以上的自然数）。在这种情况下，添加气体是C 5 F 10气体或C 6 F 12 N 12气体。

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