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1. 发明授权

US08858712B2 Electrode for use in plasma processing apparatus and plasma processing apparatus 有权
标题翻译：用于等离子体处理装置和等离子体处理装置的电极
公开(公告)号：US08858712B2
公开(公告)日：2014-10-14
申请号：US12844969
申请日：2010-07-28
申请人： Keiichi Nagakubo , Takahiro Miyai
发明人： Keiichi Nagakubo , Takahiro Miyai
IPC分类号： C23C16/00 , C23C16/455 , C23F1/00 , H01J37/32
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要： An electrode for use in a plasma processing apparatus is provided above a lower electrode within a processing chamber so as to face the lower electrode serving as a mounting table configured to mount thereon a processing target substrate. The electrode includes an upper member provided with a plurality of gas passage holes through which a processing gas is supplied; and a lower member positioned below the upper member and provided with multiple sets of gas discharge holes through which the processing gas is discharged. Here, each gas passage hole may have a diameter larger than that of each gas discharge hole, each set of the gas discharge holes may communicate with corresponding one of the gas passage holes, and each set of the gas discharge holes may be arranged outside the rim of the corresponding one of the gas passage holes when viewed from a top thereof.
摘要翻译：用于等离子体处理装置的电极设置在处理室内的下电极的上方，以面对作为安装在其上的处理对象基板的安装台的下电极。电极包括：上部构件，设置有多个气体通过孔，通过该气体通过孔供给处理气体; 以及下部构件，其位于所述上部构件下方并且设置有多组气体排出孔，所述处理气体通过所述气体排出孔排出。这里，每个气体通道孔的直径可以大于每个气体排出孔的直径，每组气体排出孔可与相应的气体通道孔连通，并且每组气体排出孔可以布置在当从其顶部观察时，相应的一个气体通道孔的边缘。

2. 发明授权

US08221579B2 Method of reusing a consumable part for use in a plasma processing apparatus 有权
标题翻译：重复使用等离子体处理装置中的消耗部件的方法
公开(公告)号：US08221579B2
公开(公告)日：2012-07-17
申请号：US12813819
申请日：2010-06-11
申请人： Nobuyuki Nagayama , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
发明人： Nobuyuki Nagayama , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.
摘要翻译：在重新使用等离子体处理装置中的消耗部件的方法中，通过化学气相沉积（CVD）沉积SiC形成碳化硅（SiC）块，并且通过将等离子体处理装置的消耗部件 SiC块，该消耗部件具有预定的形状。通过使用制造的消耗部件在基板上进行第一等离子体处理。已经被等离子体处理侵蚀的可消耗部件的表面经过一段干净的处理一段时间。通过CVD将SiC沉积在被腐蚀的消耗部件的清洁表面上。具有预定形状的消耗部件通过处理具有沉积SiC的表面的侵蚀的消耗部件来再制造。通过使用再制造的消耗部件在基板上进行第二等离子体处理。

3. 外观设计

USD560284S1 Cover ring 有权
标题翻译：盖环
公开(公告)号：USD560284S1
公开(公告)日：2008-01-22
申请号：US29233657
申请日：2005-07-08
申请人： Keiichi Nagakubo , Daiki Satoh
设计人： Keiichi Nagakubo , Daiki Satoh

4. 外观设计

USD709539S1 Focusing ring 有权
标题翻译：聚焦环
公开(公告)号：USD709539S1
公开(公告)日：2014-07-22
申请号：US29417080
申请日：2012-03-29
申请人： Yusei Kuwabara , Keiichi Nagakubo
设计人： Yusei Kuwabara , Keiichi Nagakubo

5. 发明授权

US08475622B2 Method of reusing a consumable part for use in a plasma processing apparatus 有权
标题翻译：重复使用等离子体处理装置中的消耗部件的方法
公开(公告)号：US08475622B2
公开(公告)日：2013-07-02
申请号：US13524895
申请日：2012-06-15
申请人： Nobuyuki Nagayama , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
发明人： Nobuyuki Nagayama , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.
摘要翻译：重复使用等离子体处理装置中的消耗部件的方法包括清洁由特定时间段内进行的第一等离子体处理而被SiC腐蚀的消耗部件的表面。该方法还包括通过CVD在被蚀刻的消耗部件的清洁表面上沉积SiC。该方法还包括通过使用再制造的可消耗部件对基板上的第二等离子体处理进行第二等离子体处理，对其上沉积有SiC的侵蚀的消耗部件进行加工，从而重新制造具有预定形状的消耗部件。

6. 发明申请

US20120258258A1 METHOD OF REUSING A CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS 有权
标题翻译：在等离子体加工设备中使用消耗部件的方法
公开(公告)号：US20120258258A1
公开(公告)日：2012-10-11
申请号：US13524895
申请日：2012-06-15
申请人： Nobuyuki NAGAYAMA , Naoyuki SATOH , Keiichi NAGAKUBO , Kazuya NAGASEKI
发明人： Nobuyuki NAGAYAMA , Naoyuki SATOH , Keiichi NAGAKUBO , Kazuya NAGASEKI
IPC分类号： C23C16/02 , C23C16/48
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.
摘要翻译：重复使用等离子体处理装置中的消耗部件的方法包括清洁由特定时间段内进行的第一等离子体处理而被SiC腐蚀的消耗部件的表面。该方法还包括通过CVD在被蚀刻的消耗部件的清洁的表面上沉积SiC。该方法还包括通过使用再制造的可消耗部件对基板上的第二等离子体处理进行第二等离子体处理，对其上沉积有SiC的侵蚀的消耗部件进行加工，从而重新制造具有预定形状的消耗部件。

7. 发明申请

US20110024044A1 ELECTRODE FOR USE IN PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS 有权
标题翻译：用于等离子体加工设备和等离子体处理设备的电极
公开(公告)号：US20110024044A1
公开(公告)日：2011-02-03
申请号：US12844969
申请日：2010-07-28
申请人： Keiichi Nagakubo , Takahiro Miyai
发明人： Keiichi Nagakubo , Takahiro Miyai
IPC分类号： H01L21/306
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要： An electrode for use in a plasma processing apparatus is provided above a lower electrode within a processing chamber so as to face the lower electrode serving as a mounting table configured to mount thereon a processing target substrate. The electrode includes an upper member provided with a plurality of gas passage holes through which a processing gas is supplied; and a lower member positioned below the upper member and provided with multiple sets of gas discharge holes through which the processing gas is discharged. Here, each gas passage hole may have a diameter larger than that of each gas discharge hole, each set of the gas discharge holes may communicate with corresponding one of the gas passage holes, and each set of the gas discharge holes may be arranged outside the rim of the corresponding one of the gas passage holes when viewed from a top thereof.
摘要翻译：用于等离子体处理装置的电极设置在处理室内的下电极的上方，以面对作为安装在其上的处理对象基板的安装台的下电极。电极包括：上部构件，设置有多个气体通过孔，通过该气体通过孔供给处理气体; 以及下部构件，其位于所述上部构件下方并且设置有多组气体排出孔，所述处理气体通过所述气体排出孔排出。这里，每个气体通道孔的直径可以大于每个气体排出孔的直径，每组气体排出孔可与相应的气体通道孔连通，并且每组气体排出孔可以布置在当从其顶部观察时，相应的一个气体通道孔的边缘。

8. 发明授权

US09117635B2 Electrode plate for plasma etching and plasma etching apparatus 有权
标题翻译：用于等离子体蚀刻的电极板和等离子体蚀刻装置
公开(公告)号：US09117635B2
公开(公告)日：2015-08-25
申请号：US13245194
申请日：2011-09-26
申请人： Naoyuki Satoh , Nobuyuki Nagayama , Keiichi Nagakubo
发明人： Naoyuki Satoh , Nobuyuki Nagayama , Keiichi Nagakubo
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23C16/455 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/505 , C23C16/509 , H01J37/32009 , H01J37/3244 , H01J37/32541
摘要： An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.
摘要翻译：将等离子体蚀刻用电极板形成为具有规定厚度的盘状，在多个同心圆的不同圆周上设置贯穿电极板表面垂直的表面的多个气孔，电极板为在电极板的径向方向分成两个或更多个区域，设置在两个或更多个区域中的气孔的类型通过区域彼此不同。

9. 外观设计

USD709537S1 Focusing ring 有权
公开(公告)号：USD709537S1
公开(公告)日：2014-07-22
申请号：US29417075
申请日：2012-03-29
申请人： Yusei Kuwabara , Keiichi Nagakubo
设计人： Yusei Kuwabara , Keiichi Nagakubo

10. 发明申请

US20110006037A1 SURFACE PROCESSING METHOD 有权
标题翻译：表面处理方法
公开(公告)号：US20110006037A1
公开(公告)日：2011-01-13
申请号：US12833406
申请日：2010-07-09
申请人： Naoyuki SATOH , Nobuyuki NAGAYAMA , Keiichi NAGAKUBO
发明人： Naoyuki SATOH , Nobuyuki NAGAYAMA , Keiichi NAGAKUBO
IPC分类号： B44C1/22
CPC分类号： C23C8/36 , C23C8/80 , C23C16/325 , C23C16/4404 , C23C16/56 , H01J2237/31
摘要： In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.
摘要翻译：在用于处理由碳化硅（SiC）制成的并且在其表面上具有碎裂层的构件的表面的表面处理方法中，具有碎裂层的构件的表面被修改为致密层以减少颗粒的数量当构件被施加到等离子体处理装置时从构件的表面产生。这里，通过加热碎片层使构件表面的SiC再结晶。

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