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1. 发明申请

US20120111500A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120111500A1
公开(公告)日：2012-05-10
申请号：US13290440
申请日：2011-11-07
申请人： Nobuyuki NAGAYAMA , Eiichiro KIKUCHI
发明人： Nobuyuki NAGAYAMA , Eiichiro KIKUCHI
IPC分类号： C23F1/08 , C23C16/458 , C23C16/50 , C23C16/455
CPC分类号： H01L21/67069 , H01J37/32642 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6831
摘要： The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.
摘要翻译：等离子体处理装置包括：处理室，其内部气密地关闭; 处理气体供给机构，其将处理气体供给到处理室中; 排气机构，其排出处理室的内部; 等离子体发生机构，其从处理气体产生等离子体; 保持台，设置在处理室中，并且构造成使得被处理基板和设置成围绕被处理基板的聚焦环保持在同一平面上; 温度控制机构，其调节保持台的温度; 以及静电卡盘，其设置在保持台的顶面上，并且包括延伸到聚焦环下方的部分的吸附电极。

2. 发明申请

US20120160808A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20120160808A1
公开(公告)日：2012-06-28
申请号：US13332986
申请日：2011-12-21
申请人： Eiichiro KIKUCHI , Nobuyuki NAGAYAMA , Takahiro MIYAI
发明人： Eiichiro KIKUCHI , Nobuyuki NAGAYAMA , Takahiro MIYAI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32165 , H01J37/32724 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.
摘要翻译：一种基板处理装置，包括：保持台，其包括具有保持晶片的基板保持面的基座和保持有聚焦环的聚焦环保持面; 静电卡盘，其将晶片的后表面静电吸附到基板保持面，并将聚焦环的后表面静电吸附到聚焦环保持面; 以及传热气体供给机构，其中所述传热气体供给机构独立地提供向所述基板的后表面供给第一传热气体的第一传热气体供给单元和向所述第二传热气体供给单元供给第二热传递气体到聚焦环的后表面。

3. 发明申请

US20120043024A1 SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD 审中-公开
标题翻译：基板加工装置和温度调整方法
公开(公告)号：US20120043024A1
公开(公告)日：2012-02-23
申请号：US13213234
申请日：2011-08-19
申请人： Yasuharu SASAKI , Eiichiro KIKUCHI , Kazuyoshi MATSUZAKI
发明人： Yasuharu SASAKI , Eiichiro KIKUCHI , Kazuyoshi MATSUZAKI
IPC分类号： C23F1/08 , C23C16/00 , F28D5/00
CPC分类号： H01L21/67109
摘要： There is provided a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor which is disposed in the chamber and on which the substrate is held; a shower head which is provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water.
摘要翻译：提供了一种基板处理装置，包括：在基板上进行等离子体处理的室; 设置在所述室中并且所述基板保持在其上的感受体; 淋浴头，其设置成与所述基座面对，其间具有处理空间; 高频电源，通过向处理空间施加高频电力来产生等离子体; 在基座的表面的后表面上形成表面被水润湿的水喷雾装置作为温度调节表面; 蒸发室，其将湿表面与湿表面周围的气氛隔离; 以及压力调节装置，其调节所述蒸发室中的压力，其中通过使用所述压力调节装置调节所述蒸发室中的压力，使得形成所述湿表面的水蒸发，从而控制所述蒸发室的表面的温度通过使用水的蒸发潜热来感受。

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