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1. 发明授权

US07175802B2 Refurbishing spent sputtering targets 失效
标题翻译：翻新废溅射靶
公开(公告)号：US07175802B2
公开(公告)日：2007-02-13
申请号：US10243948
申请日：2002-09-16
申请人： Michael Sandlin , Wenjun Zhang , Bernd Kunkel
发明人： Michael Sandlin , Wenjun Zhang , Bernd Kunkel
IPC分类号： C23C14/34 , B22F7/00
CPC分类号： B22F7/062 , B22F2007/068 , B22F2998/10 , C23C14/3414 , B22F3/1208 , B22F3/15
摘要： Spent sputtering targets are refurbished by filling the depleted region of the target with new sputter material using a hot isostatic pressing or HIP'ing technique.
摘要翻译：通过使用热等静压或HIP'ing技术，用新的溅射材料填充靶的耗尽区域来重新喷涂溅射靶。

2. 发明授权

US07229588B2 Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal 有权
标题翻译：使用快速固化的合金粉末和元素Pt金属制造的机械合金化的贵金属磁性溅射靶
公开(公告)号：US07229588B2
公开(公告)日：2007-06-12
申请号：US10755229
申请日：2004-01-13
申请人： Michael Sandlin , Bernd Kunkel , Willy Zhang , Phillip Corno
发明人： Michael Sandlin , Bernd Kunkel , Willy Zhang , Phillip Corno
IPC分类号： B22F3/12 , C23C14/34
CPC分类号： C23C14/14 , C23C14/3414 , H01F41/183
摘要： A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.
摘要翻译：具有多相的钴 - 铬 - 硼 - 铂溅射靶合金。该合金可以包括Cr，B，Ta，Nb，C，Mo，Ti，V，W，Zr，Zn，Cu，Hf，O，Si或N.该合金是通过将Pt粉末与钴 - 硼母合金，球磨粉末和HIP'ing以将粉末致密化成合金。

3. 发明授权

US06797137B2 Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal 有权
标题翻译：使用快速固化的合金粉末和元素Pt金属制造机械合金化的贵金属磁性溅射靶
公开(公告)号：US06797137B2
公开(公告)日：2004-09-28
申请号：US09832181
申请日：2001-04-11
申请人： Michael Sandlin , Bernd Kunkel , Willy Zhang , Phillip Corno
发明人： Michael Sandlin , Bernd Kunkel , Willy Zhang , Phillip Corno
IPC分类号： C23C1434
CPC分类号： C23C14/14 , C23C14/3414 , H01F41/183
摘要： A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.
摘要翻译：具有多相的钴 - 铬 - 硼 - 铂溅射靶合金。该合金可以包括Cr，B，Ta，Nb，C，Mo，Ti，V，W，Zr，Zn，Cu，Hf，O，Si或N.该合金是通过将Pt粉末与钴 - 硼母合金，球磨粉末和HIP'ing将粉末致密化成合金。

4. 发明申请

US20090053089A1 HOMOGENEOUS GRANULATED METAL BASED and METAL-CERAMIC BASED POWDERS 审中-公开
标题翻译：均匀的基于金属和金属陶瓷的粉末
公开(公告)号：US20090053089A1
公开(公告)日：2009-02-26
申请号：US11841196
申请日：2007-08-20
申请人： Fenglin YANG , Carl Derrington , Bernd Kunkel
发明人： Fenglin YANG , Carl Derrington , Bernd Kunkel
IPC分类号： B22F7/00 , C22C32/00
CPC分类号： B22F9/026 , C22C1/05
摘要： A method of making a homogeneous granulated metal-based powder, comprises steps of: providing preselected amounts of at least one metal element or metal alloy, at least one ceramic compound, and/or at least one non-metallic element; forming a homogeneous slurry/suspension or wet mixture comprising the preselected amounts of metal element(s) and/or metal alloys, ceramic compound(s), and/or non-metallic element(s), a liquid phase comprising at least one liquid, and at least one binder material; drying the slurry/suspension or mixture to remove at least a portion of the liquid phase and form a powder mixture comprising partially or completely dried granules; and subjecting the granules to a thermal de-binder process for effecting: additional removal of any remaining liquid phase, if necessary; removal of the at least one binder material; reduction of carbon content; reduction of oxygen on the surfaces or interior of the metal or metal alloy phases in the granules; and optional partial sintering for strengthening for withstanding subsequent processing. The resultant granules are useful in fabricating magnetic sputtering targets employed in the manufacture of magnetic data/information storage and retrieval media.
摘要翻译：制备均匀的粒状金属基粉末的方法包括以下步骤：提供预选量的至少一种金属元素或金属合金，至少一种陶瓷化合物和/或至少一种非金属元素; 形成均匀的浆料/悬浮液或湿混合物，其包含预选量的金属元素和/或金属合金，陶瓷化合物和/或非金属元素，液相包含至少一种液体，和至少一种粘合剂材料; 干燥浆液/悬浮液或混合物以除去至少一部分液相并形成包含部分或完全干燥的颗粒的粉末混合物; 并且对颗粒进行热去粘合剂处理以进行：如果需要，另外除去任何剩余的液相; 去除所述至少一种粘合剂材料; 碳含量降低; 减少颗粒中金属或金属合金相的表面或内部的氧气; 和可选的部分烧结用于加强以耐受后续加工。所得颗粒可用于制造用于制造磁数据/信息存储和检索介质的磁性溅射靶。

5. 发明申请

US20090010792A1 Brittle metal alloy sputtering targets and method of fabricating same 审中-公开
标题翻译：脆性金属合金溅射靶及其制造方法
公开(公告)号：US20090010792A1
公开(公告)日：2009-01-08
申请号：US11822065
申请日：2007-07-02
申请人： Wuwen Yi , Bernd Kunkel , Carl Derrington , ShinHwa Li , Anand Deodutt
发明人： Wuwen Yi , Bernd Kunkel , Carl Derrington , ShinHwa Li , Anand Deodutt
IPC分类号： B22F3/02 , C23C14/34
CPC分类号： C22C27/02 , B22F2003/247 , B22F2998/00 , B22F2998/10 , C22C1/04 , C22C5/04 , C23C14/3414 , H01L21/2855 , H01L21/76843 , H01L21/76873 , C22C1/045 , C22C1/0466 , B22F1/0003 , B22F3/04 , B22F3/15 , B22F3/24
摘要： A method of fabricating a sputtering target assembly comprises steps of mixing/blending selected amounts of powders of at least one noble or near-noble Group VIII metal at least one Group IVB, VB, or VIB refractory metal; forming the mixed/blended powder into a green compact having increased density; forming a full density compact from the green compact; cutting a target plate slice from the full density compact; diffusion bonding a backing plate to a surface of the target plate slice to form a target/backing plate assembly; and machining the target/backing plate assembly to a selected final dimension. The disclosed method is particularly useful for fabricating large diameter Ru—Ta alloy targets utilized in semiconductor metallization processing.
摘要翻译：制造溅射靶组件的方法包括以下步骤：将至少一种贵金属或近贵金属Ⅷ族金属的至少一种IVB族，VB族或VIB族难熔金属的选定量的粉末混合/共混; 将混合/混合的粉末形成具有增加的密度的生坯; 从绿色压块形成全密度的压块; 从全密度压实切割靶板切片; 将背板扩散粘合到靶板切片的表面以形成靶/背板组件; 并将目标/背板组件加工到所选的最终尺寸。所公开的方法对于制造用于半导体金属化处理的大直径Ru-Ta合金靶特别有用。

6. 发明申请

US20080050263A1 Enhanced sputter target manufacturing method 审中-公开
公开(公告)号：US20080050263A1
公开(公告)日：2008-02-28
申请号：US11882502
申请日：2007-08-02
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： B22F3/00 , B22F1/00 , B22F9/04
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.

7. 发明申请

US20050274221A1 Enhanced sputter target alloy compositions 审中-公开
标题翻译：增强的溅射靶合金组成
公开(公告)号：US20050274221A1
公开(公告)日：2005-12-15
申请号：US11183968
申请日：2005-07-19
申请人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
发明人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
IPC分类号： C23C14/00 , C23C14/14 , C23C14/34 , G11B5/64 , G11B5/65 , G11B5/851
CPC分类号： C23C14/3414 , C23C14/14 , G11B5/656 , G11B5/851
摘要： A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X1, where X1 is selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X2, wherein X2 is an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).
摘要翻译：溅射靶，其中溅射靶由钴（Co）组成，大于0且高达24原子％的铬（Cr），大于0且高达20原子％的铂（Pt）大于0，以及多达20原子百分比的硼（B），大于0和高达10原子％的金（Au）。溅射靶还包括X 1，其中X 1选自钨（W），钇（Y），锰（Mn）和钼（Mo）。溅射靶还包含0至7原子％的X 2 O 2，其中X 2是选自钛（Ti），钒（V），锆（Zr），铌（Nb），钌（Ru），铑（Rh），钯（Pd），铪（Hf），钽（Ta）和铱（Ir）。

8. 发明授权

US08118906B2 Methodology for recycling Ru and Ru-alloy deposition targets and targets made of recycled Ru and Ru-based alloy powders 有权
标题翻译：回收Ru和Ru合金沉积目标和由再循环的Ru和Ru基合金粉末制成的靶材的方法
公开(公告)号：US08118906B2
公开(公告)日：2012-02-21
申请号：US11927325
申请日：2007-10-29
申请人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
发明人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
IPC分类号： B22F9/04
CPC分类号： C22B11/02 , C22B7/005 , C22B7/007 , C23C14/3414 , Y02P10/234
摘要： A method of recycling ruthenium (Ru) and Ru-based alloys comprises steps of: providing a solid body of Ru or a Ru-based alloy; segmenting the body to form a particulate material; removing contaminants, including Fe, from the particulate material; reducing the sizes of the particulate material to form a powder material; removing contaminants, including Fe, from the powder material; reducing oxygen content of the powder material to below a predetermined level to form a purified powder material; and removing particles greater than a predetermined size from the purified powder material. The purified powder material may be utilized for forming deposition sources, e.g., sputtering targets.
摘要翻译：回收钌（Ru）和Ru基合金的方法包括以下步骤：提供Ru或Ru-基合金的固体; 分割身体以形成颗粒材料; 从颗粒材料中去除污染物，包括Fe; 减小颗粒材料的尺寸以形成粉末材料; 从粉末材料中去除污染物，包括Fe; 将粉末材料的氧含量降低至预定水平以形成纯化粉末材料; 并从净化的粉末材料除去大于预定尺寸的颗粒。纯化的粉末材料可用于形成沉积源，例如溅射靶。

9. 发明申请

US20080202916A1 Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements 审中-公开
标题翻译：控制含有磁性和非磁性元素的溅射靶中的漏磁通
公开(公告)号：US20080202916A1
公开(公告)日：2008-08-28
申请号：US11709134
申请日：2007-02-22
申请人： Kyung H. Chung , Daniel R. Marx , Bernd Kunkel
发明人： Kyung H. Chung , Daniel R. Marx , Bernd Kunkel
IPC分类号： C23C14/00
CPC分类号： C23C14/3414
摘要： Various exemplary embodiments of the present invention relate to a method for controlling magnetic leakage flux in a sputtering target containing magnetic and non-magnetic elements. The method relates to selecting a particle size of at least one non-magnetic phase in a microstructure, where the particle size of the non-magnetic phase is greater than or equal to one micron. The non-magnetic phase is combined with at least one magnetic phase in the microstructure, where the magnetic phase is greater than or equal to 10 atomic percent and is greater than one micron in size. The selected particle size of the non-magnetic phase decreases the diffusion between the magnetic and non-magnetic phases in the microstructure, and may increase the pass through flux (PTF) of the sputtering target. The magnetic phase and non-magnetic phases may be combined in the microstructure by hot isostatic pressing, sintering, spark plasma sintering, or vacuum hot pressing.
摘要翻译：本发明的各种示例性实施例涉及一种用于控制包含磁性和非磁性元件的溅射靶中的漏磁通的方法。该方法涉及在微结构中选择至少一个非磁性相的粒度，其中非磁性相的粒度大于或等于1微米。非磁性相与微观结构中的至少一个磁性相组合，其中磁相大于或等于10原子百分比并且尺寸大于1微米。所选择的非磁性粒子尺寸减小了微观结构中的磁性和非磁性相之间的扩散，并且可以增加溅射靶的通过通量（PTF）。可以通过热等静压，烧结，放电等离子烧结或真空热压将磁相和非磁性相组合在微结构中。

10. 发明申请

US20070017803A1 Enhanced sputter target manufacturing method 审中-公开
公开(公告)号：US20070017803A1
公开(公告)日：2007-01-25
申请号：US11284911
申请日：2005-11-23
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.

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