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1. 发明申请

US20120111723A1 METHODOLOGY FOR RECYCLING RU AND RU-ALLOY DEPOSITION TARGETS & TARGETS MADE OF RECYCLED RU AND RU-BASED ALLOY POWDERS 审中-公开
标题翻译：回收RU和RU合金沉积目标的方法和回收RU和RU的合金粉末的目标
公开(公告)号：US20120111723A1
公开(公告)日：2012-05-10
申请号：US13350638
申请日：2012-01-13
申请人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
发明人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
IPC分类号： C22C5/04 , C23C14/06
CPC分类号： C22B11/02 , C22B7/005 , C22B7/007 , C23C14/3414 , Y02P10/234
摘要： A recycled deposition source is ruthenium (Ru) or Ru-based alloy material in the form of a powder material having a size not greater than a 325 mesh size and having an average tap density greater than about 5 gm/cm3. The power material may be non-porous and not agglomerated The recycled deposition source may have less than about 500 ppm of iron and less than about 500 ppm of oxygen. The recycled deposition source may be a recycled Ru or RuCr deposition source, where the recycled Ru or RuCr deposition source has a density comparable to a density of a Ru or RuCr deposition source fabricated from virgin Ru or RuCr powder material, and has a hardness greater than a hardness of a Ru or RuCr deposition source fabricated from virgin Ru or RuCr powder material. The recycled deposition source may be in the form of a sputtering target.
摘要翻译：回收的沉积源是具有尺寸不大于325目尺寸并且具有大于约5gm / cm 3的平均振实密度的粉末材料形式的钌（Ru）或Ru基合金材料。动力材料可以是无孔的并且不附聚。再循环的沉积源可以具有小于约500ppm的铁和小于约500ppm的氧。回收的沉积源可以是再循环的Ru或RuCr沉积源，其中再循环的Ru或RuCr沉积源的密度与由原始Ru或RuCr粉末材料制成的Ru或RuCr沉积源的密度相当，并且具有更大的硬度比由原始Ru或RuCr粉末材料制成的Ru或RuCr沉积源的硬度。再循环的沉积源可以是溅射靶的形式。

2. 发明申请

US20090107837A1 METHODOLOGY FOR RECYCLING RU AND RU-ALLOY DEPOSITION TARGETS & TARGETS MADE OF RECYCLED RU AND RU-BASED ALLOY POWDERS 有权
标题翻译：回收RU和RU合金沉积目标的方法和回收RU和RU的合金粉末的目标
公开(公告)号：US20090107837A1
公开(公告)日：2009-04-30
申请号：US11927325
申请日：2007-10-29
申请人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
发明人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
IPC分类号： C23C14/14 , B22F9/04 , B22F1/00 , C22C5/04
CPC分类号： C22B11/02 , C22B7/005 , C22B7/007 , C23C14/3414 , Y02P10/234
摘要： A method of recycling ruthenium (Ru) and Ru-based alloys comprises steps of: providing a solid body of Ru or a Ru-based alloy; segmenting the body to form a particulate material; removing contaminants, including Fe, from the particulate material; reducing the sizes of the particulate material to form a powder material; removing contaminants, including Fe, from the powder material; reducing oxygen content of the powder material to below a predetermined level to form a purified powder material; and removing particles greater than a predetermined size from the purified powder material. The purified powder material may be utilized for forming deposition sources, e.g., sputtering targets.
摘要翻译：回收钌（Ru）和Ru基合金的方法包括以下步骤：提供Ru或Ru-基合金的固体; 分割身体以形成颗粒材料; 从颗粒材料中去除污染物，包括Fe; 减小颗粒材料的尺寸以形成粉末材料; 从粉末材料中去除污染物，包括Fe; 将粉末材料的氧含量降低至预定水平以形成纯化粉末材料; 并从净化的粉末材料除去大于预定尺寸的颗粒。纯化的粉末材料可用于形成沉积源，例如溅射靶。

3. 发明授权

US08118906B2 Methodology for recycling Ru and Ru-alloy deposition targets and targets made of recycled Ru and Ru-based alloy powders 有权
标题翻译：回收Ru和Ru合金沉积目标和由再循环的Ru和Ru基合金粉末制成的靶材的方法
公开(公告)号：US08118906B2
公开(公告)日：2012-02-21
申请号：US11927325
申请日：2007-10-29
申请人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
发明人： Wuwen Yi , William Heckman , Bernd Kunkel , Carl Derrington , Patrick Griffin
IPC分类号： B22F9/04
CPC分类号： C22B11/02 , C22B7/005 , C22B7/007 , C23C14/3414 , Y02P10/234
摘要： A method of recycling ruthenium (Ru) and Ru-based alloys comprises steps of: providing a solid body of Ru or a Ru-based alloy; segmenting the body to form a particulate material; removing contaminants, including Fe, from the particulate material; reducing the sizes of the particulate material to form a powder material; removing contaminants, including Fe, from the powder material; reducing oxygen content of the powder material to below a predetermined level to form a purified powder material; and removing particles greater than a predetermined size from the purified powder material. The purified powder material may be utilized for forming deposition sources, e.g., sputtering targets.
摘要翻译：回收钌（Ru）和Ru基合金的方法包括以下步骤：提供Ru或Ru-基合金的固体; 分割身体以形成颗粒材料; 从颗粒材料中去除污染物，包括Fe; 减小颗粒材料的尺寸以形成粉末材料; 从粉末材料中去除污染物，包括Fe; 将粉末材料的氧含量降低至预定水平以形成纯化粉末材料; 并从净化的粉末材料除去大于预定尺寸的颗粒。纯化的粉末材料可用于形成沉积源，例如溅射靶。

4. 发明申请

US20090010792A1 Brittle metal alloy sputtering targets and method of fabricating same 审中-公开
标题翻译：脆性金属合金溅射靶及其制造方法
公开(公告)号：US20090010792A1
公开(公告)日：2009-01-08
申请号：US11822065
申请日：2007-07-02
申请人： Wuwen Yi , Bernd Kunkel , Carl Derrington , ShinHwa Li , Anand Deodutt
发明人： Wuwen Yi , Bernd Kunkel , Carl Derrington , ShinHwa Li , Anand Deodutt
IPC分类号： B22F3/02 , C23C14/34
CPC分类号： C22C27/02 , B22F2003/247 , B22F2998/00 , B22F2998/10 , C22C1/04 , C22C5/04 , C23C14/3414 , H01L21/2855 , H01L21/76843 , H01L21/76873 , C22C1/045 , C22C1/0466 , B22F1/0003 , B22F3/04 , B22F3/15 , B22F3/24
摘要： A method of fabricating a sputtering target assembly comprises steps of mixing/blending selected amounts of powders of at least one noble or near-noble Group VIII metal at least one Group IVB, VB, or VIB refractory metal; forming the mixed/blended powder into a green compact having increased density; forming a full density compact from the green compact; cutting a target plate slice from the full density compact; diffusion bonding a backing plate to a surface of the target plate slice to form a target/backing plate assembly; and machining the target/backing plate assembly to a selected final dimension. The disclosed method is particularly useful for fabricating large diameter Ru—Ta alloy targets utilized in semiconductor metallization processing.
摘要翻译：制造溅射靶组件的方法包括以下步骤：将至少一种贵金属或近贵金属Ⅷ族金属的至少一种IVB族，VB族或VIB族难熔金属的选定量的粉末混合/共混; 将混合/混合的粉末形成具有增加的密度的生坯; 从绿色压块形成全密度的压块; 从全密度压实切割靶板切片; 将背板扩散粘合到靶板切片的表面以形成靶/背板组件; 并将目标/背板组件加工到所选的最终尺寸。所公开的方法对于制造用于半导体金属化处理的大直径Ru-Ta合金靶特别有用。

5. 发明授权

US07767043B2 Copper sputtering targets and methods of forming copper sputtering targets 有权
标题翻译：铜溅射靶和形成铜溅射靶的方法
公开(公告)号：US07767043B2
公开(公告)日：2010-08-03
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
IPC分类号： B22D17/00 , C22F1/08 , C22C14/00
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译：本发明包括含铜溅射靶。目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。本发明还包括生产粘结和单片铜和铜合金靶的方法。

6. 发明申请

US20050178661A1 Physical vapor deposition targets 审中-公开
标题翻译：物理气相沉积目标
公开(公告)号：US20050178661A1
公开(公告)日：2005-08-18
申请号：US11108302
申请日：2005-04-18
申请人： Wuwen Yi , Chi Wu , Diana Morales
发明人： Wuwen Yi , Chi Wu , Diana Morales
IPC分类号： B22F5/00 , C23C14/34 , C23C14/32
CPC分类号： B22F5/007 , B22F2998/00 , C23C14/3414 , Y10T428/12389 , B22F3/14 , B22F3/17
摘要： The invention includes methods of forming physical vapor deposition targets, and includes targets and target assemblies. The methods of forming the targets comprise hot-pressing or die forging of suitable materials to form a target blank. The target blank has a pair of opposing surfaces, with one of the opposing surfaces having a topography that is substantially an inverse of an expected wear profile. The target blank can be bonded to a backing plate to form a target assembly or can be utilized as a monolithic target.
摘要翻译：本发明包括形成物理气相沉积靶的方法，包括目标和目标组件。形成靶材的方法包括热压或模锻合适的材料以形成目标坯料。目标坯料具有一对相对表面，其中一个相对表面具有基本上与预期磨损曲线相反的形貌。目标坯料可以结合到背板以形成靶组件，或者可以用作单片靶。

7. 发明申请

US20070251818A1 Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets 审中-公开
标题翻译：铜物理气相沉积目标和制备铜物理气相沉积靶的方法
公开(公告)号：US20070251818A1
公开(公告)日：2007-11-01
申请号：US11415621
申请日：2006-05-01
申请人： Wuwen Yi , Susan Strothers
发明人： Wuwen Yi , Susan Strothers
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C22C9/00
摘要： The invention includes physical vapor deposition targets formed of copper material and having an average grain size of less than 50 microns and an absence of course-grain areas throughout the target. The invention encompasses a physical vapor deposition target of a copper material and having an average grain size of less than 50 microns with a grain size standard deviation of less than 5% (1−σ) throughout the target. The copper material is selected from copper alloys and high-purity copper material containing greater than or equal to 99.9999% copper, by weight. The invention includes methods of forming copper physical vapor deposition targets. An as-cast copper material is subjected to a multistage processing. Each stage of the multistage processing includes a heating event, a hot-forging event, and a water quenching event. After the multistage processing the copper material is rolled to produce a target blank.
摘要翻译：本发明包括由铜材料形成并且具有小于50微米的平均晶粒尺寸并且整个靶材上不存在过程晶粒区域的物理气相沉积靶。本发明包括铜材料的物理气相沉积靶，其平均粒径小于50微米，其整个靶材的晶粒尺寸标准偏差小于5％（1-σ）。铜材料选自铜合金和含有大于或等于99.9999重量％铜的高纯度铜材料。本发明包括形成铜物理气相沉积靶的方法。铸造铜材料经受多级处理。多级处理的每个阶段包括加热事件，热锻事件和水淬事件。在多级处理之后，轧制铜材料以产生目标坯料。

8. 发明申请

US20060062686A1 PVD target support members and methods of making 审中-公开
标题翻译： PVD目标支持成员和制作方法
公开(公告)号：US20060062686A1
公开(公告)日：2006-03-23
申请号：US10943369
申请日：2004-09-17
申请人： Michael Pinter , Janine Kardokus , Wuwen Yi
发明人： Michael Pinter , Janine Kardokus , Wuwen Yi
IPC分类号： C22C9/00
CPC分类号： C22C9/00 , C23C14/3407 , H01J37/3435
摘要： A PVD target support member includes an alloy containing at least 90 wt % of a first metal and also containing a second metal and a third metal. The second metal increases electrical resistivity compared to an otherwise identical alloy lacking the second metal. The third metal increase tensile and/or yield strength compared to an otherwise identical alloy lacking the third metal. The alloy may exhibit a thermal stability during diffusion bonding to a target that meets or exceeds thermal stabilities of the otherwise identical alloy lacking the second metal and the otherwise identical alloy lacking the third metal. Another PVD target support member includes an alloy containing at least 90 wt % copper and also containing titanium and silver. The support member may be a backing plate.
摘要翻译： PVD靶支撑构件包括含有至少90重量％的第一金属并且还含有第二金属和第三金属的合金。与没有第二金属的其他相同的合金相比，第二种金属提高了电阻率。与缺少第三种金属的其他相同的合金相比，第三种金属增加了拉伸和/或屈服强度。该合金可以在扩散接合到目标物时表现出热稳定性，该热稳定性满足或超过缺少第二金属的另外相同的合金的热稳定性，以及缺少第三种金属的其它相同的合金。另一个PVD靶支撑件包括含有至少90wt％铜并且还含有钛和银的合金。支撑构件可以是背板。

9. 发明申请

US20050269201A1 Methods of forming PVD target/backing plate constructions 审中-公开
标题翻译：形成PVD靶/背板结构的方法
公开(公告)号：US20050269201A1
公开(公告)日：2005-12-08
申请号：US11186213
申请日：2005-07-21
申请人： Brett Clark , Wuwen Yi , Roberta Smits , Alan Brown
发明人： Brett Clark , Wuwen Yi , Roberta Smits , Alan Brown
IPC分类号： C23C14/32 , C23C14/34 , G01B17/02
CPC分类号： G01N29/07 , C23C14/3407 , G01B17/025 , G01N2291/02854 , G01N2291/044 , G01N2291/2632
摘要： The invention encompasses a construction in which a PVD target is bonded to a backing plate. The target has a bonding surface utilized in forming the bond to the backing plate, and the backing plate has a bonding surface utilized in forming the bond to the target. One or more holes extend into the target through the target bonding surface and/or one or more holes extend into the backing through the backing plate bonding surface. The invention also includes methods of forming PVD target/backing plate constructions, and methods of utilizing holes extending into one or both of the target and the backing plate of the target/backing plate construction during ultrasound determination of a thickness of the target.
摘要翻译：本发明包括其中PVD靶结合到背板的结构。目标具有用于形成与背板的结合的接合表面，并且背板具有用于形成与靶的结合的接合表面。一个或多个孔通过靶接合表面延伸到靶中，和/或一个或多个孔通过背板接合表面延伸到背衬中。本发明还包括形成PVD靶/背板结构的方法，以及在超声波确定靶的厚度的过程中，利用延伸到目标/背板结构的靶板和背板中的一个或两个的孔的方法。

10. 发明申请

US20100059147A9 Copper Sputtering Targets and Methods of Forming Copper Sputtering Targets 有权
标题翻译：铜溅射靶和形成铜溅射靶的方法
公开(公告)号：US20100059147A9
公开(公告)日：2010-03-11
申请号：US12235427
申请日：2008-09-22
申请人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
发明人： Vladimir M. Segal , Wuwen Yi , Stephane Ferrasse , Chi tse Wu , Susan D. Strothers , Frank A. Alford , William B. Willett
IPC分类号： C22F1/08
CPC分类号： C23C14/3414 , B21C23/001
摘要： The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
摘要翻译：本发明包括含铜溅射靶。目标是整体或结合的，并且含有至少99.99重量％的铜，并且具有1微米至50微米的平均粒度。包含铜的靶具有大于或等于约15ksi的屈服强度和大于约40的布氏硬度（HB）。本发明包括基本上由小于或等于约 99.99重量％的铜，合金元素的总量为至少100ppm且小于10重量％。靶具有小于1微米至50微米的平均粒度，并且在整个靶上具有小于约15％标准偏差（1-sigma）的粒度不均匀性。本发明还包括生产粘结和单片铜和铜合金靶的方法。

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