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1. 发明申请

US20080050263A1 Enhanced sputter target manufacturing method 审中-公开
公开(公告)号：US20080050263A1
公开(公告)日：2008-02-28
申请号：US11882502
申请日：2007-08-02
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： B22F3/00 , B22F1/00 , B22F9/04
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.

2. 发明申请

US20050274221A1 Enhanced sputter target alloy compositions 审中-公开
标题翻译：增强的溅射靶合金组成
公开(公告)号：US20050274221A1
公开(公告)日：2005-12-15
申请号：US11183968
申请日：2005-07-19
申请人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
发明人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
IPC分类号： C23C14/00 , C23C14/14 , C23C14/34 , G11B5/64 , G11B5/65 , G11B5/851
CPC分类号： C23C14/3414 , C23C14/14 , G11B5/656 , G11B5/851
摘要： A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X1, where X1 is selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X2, wherein X2 is an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).
摘要翻译：溅射靶，其中溅射靶由钴（Co）组成，大于0且高达24原子％的铬（Cr），大于0且高达20原子％的铂（Pt）大于0，以及多达20原子百分比的硼（B），大于0和高达10原子％的金（Au）。溅射靶还包括X 1，其中X 1选自钨（W），钇（Y），锰（Mn）和钼（Mo）。溅射靶还包含0至7原子％的X 2 O 2，其中X 2是选自钛（Ti），钒（V），锆（Zr），铌（Nb），钌（Ru），铑（Rh），钯（Pd），铪（Hf），钽（Ta）和铱（Ir）。

3. 发明申请

US20070017803A1 Enhanced sputter target manufacturing method 审中-公开
公开(公告)号：US20070017803A1
公开(公告)日：2007-01-25
申请号：US11284911
申请日：2005-11-23
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.

4. 发明申请

US20070269330A1 Enhanced sputter target manufacturing method 审中-公开
标题翻译：增强的溅射靶制造方法
公开(公告)号：US20070269330A1
公开(公告)日：2007-11-22
申请号：US11882501
申请日：2007-08-02
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： B22F3/02
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.
摘要翻译：一种制造溅射靶的方法，包括将多种原料制备成与合金系统相对应的组合物的步骤，所述多种原料包括纯元素或母合金。该方法还包括在真空或氩（Ar）的分压下将多种原料加热至完全液态的步骤，以形成对应于该合金系统的熔融合金，使熔融合金固化形成锭，并将锭再加热到完全液态以形成扩散熔融合金。该方法还包括以下步骤：将扩散熔融合金快速凝固成均匀的预合金粉末材料，将纯元素粉末混合到均匀的预合金粉末材料上，将均匀的预合金粉末材料固结成完全致密的均质材料，热轧完全致密的均质材料。此外，该方法包括冷轧完全致密的均质材料，以及加工完全致密的均质材料以形成溅射靶的步骤。

5. 发明申请

US20070169853A1 Magnetic sputter targets manufactured using directional solidification 审中-公开
标题翻译：使用定向凝固制造的磁性溅射靶
公开(公告)号：US20070169853A1
公开(公告)日：2007-07-26
申请号：US11336980
申请日：2006-01-23
申请人： Bernd Kunkel , David Long , Abdelouahab Ziani , Anirban Das , Jun Hui
发明人： Bernd Kunkel , David Long , Abdelouahab Ziani , Anirban Das , Jun Hui
IPC分类号： C22C19/07
CPC分类号： C23C14/3414 , B22D27/045 , C22C19/007 , C22C19/07
摘要： A sputter target includes a metal alloy having a target surface, a rear surface and a thickness between the target and rear surfaces. The target surface and rear surface are outer surfaces of the metal alloy. The metal alloy has a thickness direction substantially along the thickness. The target surface is substantially normal to the thickness direction. The metal alloy has a single substantially homogenous microstructural zone across substantially the entire thickness. The metal alloy further includes dendrites. The dendrites at the target surface are oriented along substantially one direction, and the dendrites at a center plane of the metal alloy are oriented along substantially the same one direction. A sputter target may include a metal alloy which is a cobalt (Co) based, and may have a [0001] hexagonal close-packing (HCP) direction oriented substantially normal to the target surface. The sputter target may be formed by directional solidification at near-equilibrium temperature conditions by withdrawing the metal alloy at a first rate through a temperature gradient. The sputter target is for forming one or more magnetic layers on a substrate for, among other purposes, data storage.
摘要翻译：溅射靶包括具有目标表面，后表面和目标表面和后表面之间的厚度的金属合金。目标表面和后表面是金属合金的外表面。金属合金的厚度方向基本上沿厚度方向。目标表面基本上垂直于厚度方向。金属合金在基本上整个厚度上具有单个基本均匀的微结构区域。金属合金还包括枝晶。目标表面的枝晶沿着大致一个方向取向，金属合金的中心平面上的枝晶沿大致相同的一个方向取向。溅射靶可以包括基于钴（Co）的金属合金，并且可以具有基本上垂直于目标表面定向的[0001]六方密封（HCP）方向。可以通过在接近平衡温度条件下的定向凝固来形成溅射靶，通过温度梯度以第一速率取出金属合金。溅射靶用于在衬底上形成一个或多个磁性层，以用于数据存储。

6. 发明申请

US20080014109A1 Enhanced sputter target manufacturing method 审中-公开
标题翻译：增强的溅射靶制造方法
公开(公告)号：US20080014109A1
公开(公告)日：2008-01-17
申请号：US11882500
申请日：2007-08-02
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： B22F3/24 , B22F1/00 , B22F9/06
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.
摘要翻译：一种制造溅射靶的方法，包括将多种原料制备成与合金系统相对应的组合物的步骤，所述多种原料包括纯元素或母合金。该方法还包括在真空或氩（Ar）的分压下将多种原料加热至完全液态的步骤，以形成对应于该合金系统的熔融合金，使熔融合金固化形成锭，并将锭再加热到完全液态以形成扩散熔融合金。该方法还包括以下步骤：将扩散熔融合金快速凝固成均匀的预合金粉末材料，将纯元素粉末混合到均匀的预合金粉末材料上，将均匀的预合金粉末材料固结成完全致密的均质材料，热轧完全致密的均质材料。此外，该方法包括冷轧完全致密的均质材料，以及加工完全致密的均质材料以形成溅射靶的步骤。

7. 发明申请

US20050277002A1 Enhanced sputter target alloy compositions 审中-公开
标题翻译：增强的溅射靶合金组成
公开(公告)号：US20050277002A1
公开(公告)日：2005-12-15
申请号：US10866795
申请日：2004-06-15
申请人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
发明人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
IPC分类号： C22C19/07 , C23C14/20 , C23C14/34 , G11B5/64 , G11B5/66 , G11B5/85 , G11B5/851 , C23C14/32 , G11B5/706
CPC分类号： G11B5/851 , C22C19/07 , C23C14/3414 , G11B5/656
摘要： A sputter target, where the sputter target is comprised of Co, greater than 0 and as much as 24 atomic percent Cr, greater than 0 and as much as 20 atomic percent Pt, greater than 0 and as much as 20 atomic percent B, and greater than 0 and as much as 10 atomic percent X1, where X1 is an element selected from the group consisting of Ag, Ce, Cu, Dy, Er, Eu, Gd, Ho, In, La, Lu, Mo, Nd, Pr, Sm, Tl, W, and Yb. The sputter target is further comprised of X2, wherein X2 is selected from the group consisting of W, Y, Mn, and Mo. Moreover, the sputter target is further comprised of 0 to 7 atomic percent X3, wherein X3 is an element selected from the group consisting of Ti, V, Zr, Nb, Ru, Rh, Pd, Hf, Ta, and Ir. The thin film sputtered by the sputter target has a coercivity value between 1000 Oersted and 4000 Oersted.
摘要翻译：溅射靶，其中溅射靶由Co组成，大于0且高达24原子％的Cr，大于0且高达20原子％的Pt，大于0和高达20原子百分比的B，以及大于0且高达10原子％X 1，其中X 1是选自Ag，Ce，Cu，Dy，Er，Eu的元素，Gd，Ho，In，La，Lu，Mo，Nd，Pr，Sm，Tl，W和Yb。溅射靶还包括X 2，其中X 2选自W，Y，Mn和Mo。此外，溅射靶更进一步其中X 3为选自Ti，V，Zr，Nb，Ru，Rh，Pd等的元素，其含量为0〜7原子％X 3， Hf，Ta和Ir。由溅射靶溅射的薄膜的矫顽力值在1000奥斯特和4000奥斯特德之间。

8. 发明授权

US08342229B1 Method of making a CIG target by die casting 有权
标题翻译：通过压铸制造CIG靶的方法
公开(公告)号：US08342229B1
公开(公告)日：2013-01-01
申请号：US12588579
申请日：2009-10-20
申请人： Abdelouahab Ziani , Daniel R. Juliano
发明人： Abdelouahab Ziani , Daniel R. Juliano
IPC分类号： B22D17/08 , B22D19/04
CPC分类号： B22D17/08 , B22D19/04 , B22D21/025 , C23C14/0623 , C23C14/3407 , C23C14/3414 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A method of making a sputtering target includes providing a backing structure, and forming a die cast copper indium gallium sputtering target material on the backing structure.
摘要翻译：制造溅射靶的方法包括提供背衬结构，以及在背衬结构上形成压铸铜铟镓溅射靶材料。

9. 发明授权

US07935558B1 Sodium salt containing CIG targets, methods of making and methods of use thereof 有权
标题翻译：含有CIG靶的钠盐，制备方法及其使用方法
公开(公告)号：US07935558B1
公开(公告)日：2011-05-03
申请号：US12907595
申请日：2010-10-19
申请人： Daniel R. Juliano , Robert Tas , Neil Mackie , Abdelouahab Ziani
发明人： Daniel R. Juliano , Robert Tas , Neil Mackie , Abdelouahab Ziani
IPC分类号： H01L31/032
CPC分类号： H01L31/0322 , C23C14/0057 , C23C14/0623 , C23C14/562 , H01L21/02568 , H01L21/02579 , H01L21/02631 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.
摘要翻译：溅射靶包括至少一种选自铜，铟和镓的金属和含钠化合物。

10. 发明申请

US20060078457A1 Low oxygen content alloy compositions 审中-公开
标题翻译：低含氧量合金组成
公开(公告)号：US20060078457A1
公开(公告)日：2006-04-13
申请号：US10961215
申请日：2004-10-12
申请人： Abdelouahab Ziani , Jon Apprill , David Furgason
发明人： Abdelouahab Ziani , Jon Apprill , David Furgason
IPC分类号： C22C5/04 , C22C18/00 , C22C28/00 , C22C22/00 , C22C38/00 , C22C19/03 , C22C19/07
CPC分类号： C22C5/04 , C22C18/00 , C22C19/005 , C22C19/07 , C22C22/00 , C22C28/00 , C22C30/00 , C22C38/00 , C23C14/3414
摘要： Alloy compositions include Mn alloys that combine Mn with one element selected from Ga, In, Ni and Zn. Also included are Fe alloys and Co alloys in which Fe or Co are combined with either Pt or Pd. The alloy compositions form ordered compounds having L10 or L12 type crystalline structures within specified compositional ranges. In addition, the alloy compositions have low levels of impurities, such as oxygen and sulfur, which provide better performance in magnetic memory applications. The alloy compositions preferably are formed into sputtering targets used for thin film applications.
摘要翻译：合金组合物包括将Mn与选自Ga，In，Ni和Zn中的一种元素组合的Mn合金。还包括Fe合金和Co合金，其中Fe或Co与Pt或Pd组合。该合金组合物在特定的组成范围内形成具有L1> 0或L1 / 2>型结晶结构的有序化合物。此外，合金组合物具有低水平的杂质，例如氧和硫，其在磁存储器应用中提供更好的性能。合金组合物优选形成用于薄膜应用的溅射靶。

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