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1. 发明授权

US11894221B2 Sputtering target and magnetic film 有权
公开(公告)号：US11894221B2
公开(公告)日：2024-02-06
申请号：US16960384
申请日：2019-05-23
申请人： JX Metals Corporation
发明人： Yasuyuki Iwabuchi , Manami Masuda , Takashi Kosho
IPC分类号： H01J37/34 , C23C14/34 , C22C19/07 , H01F41/18 , H01F10/16 , G11B5/65 , G11B5/851
CPC分类号： H01J37/3429 , C22C19/07 , C23C14/3414 , G11B5/656 , G11B5/658 , G11B5/851 , H01F10/16 , H01F41/183
摘要： Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

2. 发明申请

US20190244754A1 MAGNETIC THIN FILM DEPOSITION CHAMBER AND THIN FILM DEPOSITION APPARATUS 审中-公开
公开(公告)号：US20190244754A1
公开(公告)日：2019-08-08
申请号：US16386651
申请日：2019-04-17
申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
发明人： Yujie YANG , Tongwen ZHANG , Wei XIA , Peijun DING , Hougong WANG
IPC分类号： H01F41/18 , C23C14/35 , C23C14/56 , H01F7/02 , H01J37/34
CPC分类号： H01F41/183 , C23C14/351 , C23C14/564 , H01F7/02 , H01F41/14 , H01F41/22 , H01J37/3435 , H01J37/3452
摘要： The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.

3. 发明申请

US20160298228A1 SOFT-MAGNETIC BASED TARGETS HAVING IMPROVED PASS THROUGH FLUX 审中-公开
标题翻译：基于软磁路的目标具有通过通路改进的通过
公开(公告)号：US20160298228A1
公开(公告)日：2016-10-13
申请号：US15093883
申请日：2016-04-08
申请人： Tosoh SMD, Inc.
发明人： Eugene Y. Ivanov , Steven Woodward , Eduardo del Rio , Christopher M. Jaworski
IPC分类号： C23C14/34 , H01J37/34 , B22F3/14 , B22F3/24 , C23C14/14 , B22F9/08
CPC分类号： C23C14/3414 , B22F3/14 , B22F2998/10 , C22C1/0433 , C22C33/02 , C22C38/00 , C22C2202/02 , C23C14/14 , H01F41/183 , H01J37/3429 , H01J37/3491 , B22F9/082 , B22F1/0003 , B22F3/15
摘要： Sputter targets and method of producing same having improved pass through flux (PTF). The targets may consist essentially of Fe—Co wherein the Co is predominantly hcp phase. The targets are prepared via powder precursors wherein at least the Co is made by a gas atomization process. This atomization process includes the steps of subjecting liquid Co to the action of dry argon gas and solidifying the liquid into small droplets. After the requisite powders have been sintered, they may be cold worked at temperatures of about 25-422° C.
摘要翻译：溅射靶及其制造方法，具有改善的通过通量（PTF）。目标基本上可以由Fe-Co组成，其中Co主要是hcp相。目标通过粉末前体制备，其中至少Co通过气体雾化法制备。这种雾化方法包括使液体Co受到干燥氩气的作用并将液体固化成小液滴的步骤。在所需的粉末已经烧结之后，它们可以在约25-422℃的温度下进行冷加工

4. 发明授权

US09034153B2 Nonmagnetic material particle dispersed ferromagnetic material sputtering target 有权
标题翻译：非磁性材料颗粒分散铁磁材料溅射靶
公开(公告)号：US09034153B2
公开(公告)日：2015-05-19
申请号：US12160042
申请日：2006-12-26
申请人： Kazuyuki Satoh
发明人： Kazuyuki Satoh
IPC分类号： C23C14/34 , G11B5/851 , H01F41/18
CPC分类号： G11B5/851 , C23C14/3414 , H01F41/183
摘要： Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer.
摘要翻译：提供了一种分散铁磁材料溅射靶的非磁性材料颗粒，其包括分散在铁磁材料中的包含非磁性材料颗粒的材料。散射铁磁材料溅射靶的非磁性材料颗粒的特征在于，在其抛光面的材料上观察到的具有结构的非磁性材料的所有颗粒的形状和尺寸都小于形成在周围的半径为2μm的全部假想圆在非磁性材料颗粒内的任意点，或者在假想圆与铁磁材料和非磁性材料的界面之间具有至少两个接触点或交点。分散铁磁材料溅射靶的非磁性材料颗粒的优点在于，通过溅射形成膜，可以降低加热等对基板的影响，可以通过DC溅射进行高速沉积，膜厚度可以调节为薄，在溅射期间可以减少颗粒（灰尘）或结节的产生，可以降低质量的变化，从而提高质量生产率，可以实现细晶粒和高密度，并且非磁性材料颗粒分散的铁磁材料溅射靶特别适合用作磁记录层。

5. 发明申请

US20130306471A1 SPUTTERING TARGET FOR FORMING MAGNETIC RECORDING MEDIUM FILM AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：用于形成磁记录介质膜的溅射目标及其生产方法
公开(公告)号：US20130306471A1
公开(公告)日：2013-11-21
申请号：US13982443
申请日：2012-01-27
申请人： Kouichi Ishiyama , Sohei Nonaka , Masanori Yosuke , Hideharu Matsuzaki
发明人： Kouichi Ishiyama , Sohei Nonaka , Masanori Yosuke , Hideharu Matsuzaki
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F3/14 , B22F2998/10 , C22C1/02 , C22C1/0466 , C22C5/04 , C22C32/0084 , C22C38/002 , C22C38/16 , C23C14/3407 , G11B5/851 , H01F10/123 , H01F41/183 , B22F3/24 , B22F9/08
摘要： Provided are a sputtering target for forming a magnetic recording medium film, on which a film having a low ordering temperature can be formed and which can suppress generation of particles, and a method for producing the same. The sputtering target for forming a magnetic recording medium film consists of a sintered body having a composition represented by the general formula: {(FexPt100-x)(100-y)Agy}(100-z)Cz, wherein x, y, and z are represented by atomic percent as 30≦x≦80, 1≦y≦30, and 3≦z≦63. Also, the method for producing the sputtering target has a step of hot pressing a mixed powder of AgPt alloy powder, FePt alloy powder, Pt powder, and graphite powder or carbon black powder in a vacuum or an inert gas atmosphere.
摘要翻译：提供一种用于形成磁记录介质膜的溅射靶，其上可以形成具有低有序温度的膜并且可以抑制颗粒的产生及其制造方法。用于形成磁记录介质膜的溅射靶由具有由以下通式表示的组成的烧结体构成：{（FexPt100-x）（100-y）Agy}（100-z）Cz，其中x，y和 z由原子百分数表示为30 @ x @ 80，1 @ y @ 30和3 @ z @ 63。此外，溅射靶的制造方法具有在真空或惰性气体气氛中热压AgPt合金粉末，FePt合金粉末，Pt粉末，石墨粉末或炭黑粉末的混合粉末的工序。

6. 发明申请

US20130206593A1 FERROMAGNETIC MATERIAL SPUTTERING TARGET 审中-公开
标题翻译： FERROMAGNETIC MATERIAL SPUTTERING目标
公开(公告)号：US20130206593A1
公开(公告)日：2013-08-15
申请号：US13882233
申请日：2011-12-15
申请人： Atsutoshi Arakawa , Yuki Ikeda
发明人： Atsutoshi Arakawa , Yuki Ikeda
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , G11B5/851 , H01F41/183
摘要： Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus.
摘要翻译：本发明提供一种含有金属含量为20摩尔％以下的组成的金属的铁磁材料溅射靶，其含量为0.5摩尔％以上且30摩尔％以下，余量为 Co，其中所述靶具有包括贱金属（A）和所述贱金属（A）内的包含35mol％或更多Ru的Co-Ru合金相（B）的结构。本发明提供一种铁磁材料溅射靶，其能够提高泄漏磁通量，从而通过磁控管溅射装置进行稳定的放电。

7. 发明申请

US20130175166A1 MAGNETRON SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： MAGNETRON喷射目标及其生产方法
公开(公告)号：US20130175166A1
公开(公告)日：2013-07-11
申请号：US13813737
申请日：2011-07-29
申请人： Takanobu Miyashita , Yasuyuki Goto
发明人： Takanobu Miyashita , Yasuyuki Goto
IPC分类号： C23C14/34
CPC分类号： H01J37/3426 , B22F1/02 , B22F3/12 , C22C1/0433 , C22C19/05 , C22C19/07 , C22C32/0026 , C22C38/30 , C22C2202/02 , C23C14/3407 , C23C14/3414 , G11B5/851 , H01F41/183
摘要： A magnetron sputtering target containing a ferromagnetic metal element includes a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases containing the ferromagnetic metal element, the plurality of non-magnetic phases containing a different constituent element from each other or containing constituent elements at different ratios from each other; and an oxide phase. Regions of the magnetic phase and the plurality of non-magnetic phases are separated from each other by the oxide phase.
摘要翻译：包含强磁性金属元素的磁控溅射靶包括含有铁磁金属元素的磁相; 包含铁磁性金属元素的多个非磁性相，所述多个非磁性相包含彼此不同的构成元素或包含彼此不同比例的构成元素; 和氧化物相。磁相和多个非磁性相的区域通过氧化物相彼此分离。

8. 发明申请

US20130168240A1 Fe-Pt-Based Ferromagnetic Material Sputtering Target 有权
标题翻译：基于Fe-Pt的铁磁材料溅射靶
公开(公告)号：US20130168240A1
公开(公告)日：2013-07-04
申请号：US13816043
申请日：2011-08-05
申请人： Shin-ichi Ogino , Yuichiro Nakamura
发明人： Shin-ichi Ogino , Yuichiro Nakamura
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C23C14/14 , G11B5/851 , H01F1/068 , H01F41/183 , H01J37/3405 , H01J37/3426 , H01J37/3429
摘要： An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.
摘要翻译：包含金属和金属氧化物的Fe-Pt系铁磁材料溅射靶，其中，所述金属的含量为5摩尔％以上且60摩尔％以下且余量为Fe的组成。本发明的目的是提供一种铁磁材料溅射靶，其能够形成由诸如Fe-Pt合金的磁相和非磁性相组成的磁记录层以隔离磁相，并且在其中使用金属氧化物作为非磁性相的材料之一。本发明提供一种强磁性材料溅射靶，其特征在于，抑制溅射时的金属氧化物的无意的释放以及由于靶内固有地形成的空穴而产生的异常放电而产生的粒子，从而提高了金属氧化物与基体合金之间的粘附性，其密度增加。

9. 发明申请

US20130001079A1 Sputtering Target of Nonmagnetic-Particle-Dispersed Ferromagnetic Material 有权
标题翻译：非磁性粒子分散铁磁材料的溅射靶
公开(公告)号：US20130001079A1
公开(公告)日：2013-01-03
申请号：US13613406
申请日：2012-09-13
申请人： Atsushi Sato
发明人： Atsushi Sato
IPC分类号： C23C14/14
CPC分类号： G11B5/851 , C22C19/07 , C22C49/08 , C22C49/14 , C22C2202/02 , C23C14/3414 , H01F41/183
摘要： A sputtering target of nonmagnetic-particle-dispersed ferromagnetic material is provided having a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 μm and a long side of 50 to 300 μm formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 μm around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material.
摘要翻译：提供了非磁性粒子分散的铁磁材料的溅射靶，其具有相（A），使得非磁性粒子分散在由含有5原子％以上且20原子％以下的Co-Cr合金形成的铁磁材料中和Co作为其余部分，并且在相（A）中由Co-Cr合金相形成的短边为30〜100μm，长边为50〜300μm的薄片纹理（B）其中每个上述非磁性颗粒具有这样的形状和尺寸，即颗粒小于在非磁性颗粒内的任意点附近具有半径为1μm的所有假想圆，或具有至少两个接触点或交点的形状和尺寸各个假想圆之间的点和铁磁材料和非磁性材料的界面。

10. 发明申请

US20120318669A1 SPUTTERING TARGET-BACKING PLATE ASSEMBLY 审中-公开
标题翻译：喷射目标板组件
公开(公告)号：US20120318669A1
公开(公告)日：2012-12-20
申请号：US13579606
申请日：2011-02-16
申请人： Yuki Ikeda , Yuichiro Nakamura , Atsutoshi Arakawa
发明人： Yuki Ikeda , Yuichiro Nakamura , Atsutoshi Arakawa
IPC分类号： C23C14/06 , B05D5/12 , B32B15/04 , C23C14/08
CPC分类号： C04B35/645 , B22F3/14 , B22F7/08 , C04B37/026 , C04B2237/123 , C04B2237/126 , C04B2237/34 , C04B2237/405 , C22C1/0433 , C22C1/051 , C22C19/07 , C22C38/002 , C23C14/3414 , H01F41/183
摘要： Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder.It is an object of the present invention to provide a sputtering target-backing plate assembly having a high average pass through flux and allowing more stable sputtering, by disposing the raw material powder for a target on the backing plate and sintering them.By simultaneously performing sintering and bonding, a sputtering target-backing plate assembly has a shorter manufacturing process, can shorten manufacturing period, and does not cause a problem of detachment due to an increase in temperature during sputtering. In addition, it is also an object of the present invention to provide a sputtering target-backing plate assembly at a reduced cost and with an improved average pass through flux (PTF).
摘要翻译：提供了一种溅射靶 - 背板组件，其中将具有磁性材料溅射靶的组成的原料粉末与背板一起填充在模具中并进行热压，从而同时粘合到背板上通过烧结磁性材料目标粉末。本发明的目的是提供一种具有高平均通过焊剂的溅射靶 - 背板组件，通过将用于靶材的原料粉末设置在背板上并进行烧结来提供更稳定的溅射。通过同时进行烧结和接合，溅射靶 - 背板组件具有较短的制造工艺，可以缩短制造周期，并且不会由于溅射期间的温度升高而引起分离的问题。此外，本发明的另一个目的是以降低的成本提供溅射靶 - 背板组件，并且具有改进的平均通过焊剂（PTF）。

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