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1. 发明申请

US20060097220A1 Etching solution and method for removing low-k dielectric layer 审中-公开
标题翻译：蚀刻溶液和去除低k介电层的方法
公开(公告)号：US20060097220A1
公开(公告)日：2006-05-11
申请号：US11270339
申请日：2005-11-09
申请人： Mi-Young Kim , Hyo-San Lee , Uk-Sun Hong , Jun-Hwan Oh , Sang-Min Lee
发明人： Mi-Young Kim , Hyo-San Lee , Uk-Sun Hong , Jun-Hwan Oh , Sang-Min Lee
IPC分类号： C09K13/00 , B44C1/22 , H01L21/461
CPC分类号： C09K13/08 , H01L21/31111
摘要： Etching solutions are disclosed for etching low-k dielectric layers on substrates, said solutions including effective proportions of an oxidant for oxidizing a low-k dielectric layer and effective proportions of an oxide etchant for removing oxides. It is possible to easily remove a low-k dielectric layer using such etching solutions by a single-stage treatment process.
摘要翻译：公开了蚀刻溶液以蚀刻在衬底上的低k电介质层，所述溶液包括用于氧化低k电介质层的氧化剂的有效比例和用于除去氧化物的氧化物蚀刻剂的有效比例。可以通过单级处理方法使用这种蚀刻溶液容易地去除低k电介质层。

2. 发明授权

US07959738B2 Method of removing photoresist and method of manufacturing a semiconductor device 失效
标题翻译：去除光刻胶的方法和制造半导体器件的方法
公开(公告)号：US07959738B2
公开(公告)日：2011-06-14
申请号：US11984340
申请日：2007-11-16
申请人： Dae-Hyuk Kang , Hyo-San Lee , Dong-Gyun Han , Chang-Ki Hong , Kun-Tack Lee
发明人： Dae-Hyuk Kang , Hyo-San Lee , Dong-Gyun Han , Chang-Ki Hong , Kun-Tack Lee
IPC分类号： H01L21/28
CPC分类号： H01L21/31133 , G03F7/422 , G03F7/425 , H01L21/28061 , H01L29/4941 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.
摘要翻译：去除光致抗蚀剂的方法可以包括在具有包括金属的导电结构的基底上的光致抗蚀剂中渗透超临界二氧化碳。渗透超临界二氧化碳的光致抗蚀剂可以容易地去除。可以使用来自基底的光致抗蚀剂清洁溶液去除渗透超临界二氧化碳的光致抗蚀剂。光致抗蚀剂清洁溶液可以包括约8重量％至约20重量％的链烷醇胺溶液，约25重量％至约40重量％的极性有机溶液，约0.5重量％至约 3重量％，其余为水。可以容易地去除光致抗蚀剂，而不会在等离子体工艺中损坏导电结构。

3. 发明申请

US20100035436A1 Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device 有权
标题翻译：用于蚀刻氧化硅层的组合物，使用其的半导体器件的蚀刻方法和用于蚀刻半导体器件的组合物
公开(公告)号：US20100035436A1
公开(公告)日：2010-02-11
申请号：US12461319
申请日：2009-08-07
申请人： Go-Un Kim , Hyo-San Lee , Myung-Kook Park , Ho-Seok Yang , Jeong-Nam Han , Chang-Ki Hong
发明人： Go-Un Kim , Hyo-San Lee , Myung-Kook Park , Ho-Seok Yang , Jeong-Nam Han , Chang-Ki Hong
IPC分类号： H01L21/306 , C09K13/08
CPC分类号： C09K13/08 , H01L21/31111
摘要： A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.
摘要翻译：用于蚀刻氧化硅层的组合物，蚀刻半导体器件的方法以及用于蚀刻包括氧化硅层和包含氟化氢，阴离子聚合物和去离子水的氮化物层的半导体器件的组合物，其中所述阴离子聚合物以用于蚀刻氧化硅层的组合物的总重量为约0.001至约2重量％的量包含，并且氧化硅层相对于氮化物层的蚀刻选择性为约80或更大。

4. 发明申请

US20070293054A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权
标题翻译：使用这些方法的超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US20070293054A1
公开(公告)日：2007-12-20
申请号：US11752834
申请日：2007-05-23
申请人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han
发明人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

5. 发明授权

US08518772B2 Fabricating method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08518772B2
公开(公告)日：2013-08-27
申请号：US13117478
申请日：2011-05-27
申请人： Keun-Hee Bai , Hyo-San Lee , Dong-Seok Lee
发明人： Keun-Hee Bai , Hyo-San Lee , Dong-Seok Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/10817 , H01L21/31111 , H01L21/31116 , H01L28/91
摘要： A fabricating method of a semiconductor device includes forming an interlayer insulation layer on a substrate, the interlayer insulation layer including a storage node contact plug, forming an etch stop layer on the interlayer insulation layer, the etch stop layer including a silicon layer or a silicon germanium layer, forming a molding insulation layer on the etch stop layer, forming a hole in the molding insulation layer by selectively etching the molding insulation layer until a portion of the etch stop layer is exposed, forming a first conductive layer conformally on an inner surface of the hole and on a top surface of the molding insulation layer, and forming a metal silicide pattern in a predetermined area of the etch stop layer exposed by the molding insulation layer by annealing the first conductive layer and the etch stop layer.
摘要翻译：半导体器件的制造方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括存储节点接触插塞，在所述层间绝缘层上形成蚀刻停止层，所述蚀刻停止层包括硅层或硅锗层，在所述蚀刻停止层上形成模制绝缘层，通过选择性地蚀刻所述模制绝缘层直到所述蚀刻停止层的一部分露出来在所述模制绝缘层中形成孔，在所述蚀刻停止层上形成第一导电层，并且在模制绝缘层的顶表面上，并且通过退火第一导电层和蚀刻停止层，在由模制绝缘层暴露的蚀刻停止层的预定区域中形成金属硅化物图案。

6. 发明申请

US20120085495A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权
公开(公告)号：US20120085495A1
公开(公告)日：2012-04-12
申请号：US13326940
申请日：2011-12-15
申请人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Tack Lim , Ha-Soo Hwang , Haldori Vuvaraj , Jae-Monk Jung
发明人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Tack Lim , Ha-Soo Hwang , Haldori Vuvaraj , Jae-Monk Jung
IPC分类号： C23F1/08 , B08B3/00
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

7. 发明申请

US20110201203A1 METHODS OF FORMING A HOLE HAVING A VERTICAL PROFILE AND SEMICONDUCTOR DEVICES HAVING A VERTICAL HOLE 有权
标题翻译：形成具有垂直剖面的孔的方法和具有垂直孔的半导体器件
公开(公告)号：US20110201203A1
公开(公告)日：2011-08-18
申请号：US13025410
申请日：2011-02-11
申请人： Hyo-San Lee , Bo-Un Yoon , Kun-Tack Lee , Dae-Hyuk Kang , Seong-Ho Moon , So-Ra Han
发明人： Hyo-San Lee , Bo-Un Yoon , Kun-Tack Lee , Dae-Hyuk Kang , Seong-Ho Moon , So-Ra Han
IPC分类号： H01L21/311
CPC分类号： H01L21/31111 , H01L21/32134 , H01L21/76802 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L27/11578 , H01L27/11582 , H01L28/91 , H01L29/4236 , H01L29/66621 , H01L29/66833 , H01L29/7926
摘要： In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.
摘要翻译：在形成孔的方法中，在基板上形成绝缘层，通过绝缘层形成露出基板的预备孔。然后在基板上形成包含有机聚合物的感光层图案以填充预备孔。然后将包含氟化氢（HF）或氟（F2）的蚀刻气体提供到感光层图案上以蚀刻绝缘层，使得预备孔的宽度增加。

8. 发明申请

US20110159660A1 Methods of Forming Integrated Circuit Capacitors Having Sidewall Supports and Capacitors Formed Thereby 有权
标题翻译：形成具有侧壁支撑和形成电容器的集成电路电容器的方法
公开(公告)号：US20110159660A1
公开(公告)日：2011-06-30
申请号：US12906184
申请日：2010-10-18
申请人： Dae-Hyuk Kang , Bo-Un Yoon , Kun-Tack Lee , Woo-Gwan Shim , Ji-Hoon Cha , Im-Soo Park , Hyo-San Lee , Young-Hoo Kim , Jung-Min Oh
发明人： Dae-Hyuk Kang , Bo-Un Yoon , Kun-Tack Lee , Woo-Gwan Shim , Ji-Hoon Cha , Im-Soo Park , Hyo-San Lee , Young-Hoo Kim , Jung-Min Oh
IPC分类号： H01L21/02 , H01G13/00
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/87
摘要： In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.
摘要翻译：在形成电容器的方法中，可以在基板上形成包括第一绝缘材料的第一模层图案。第一模层图案可以具有沟槽。可以在沟槽中形成包括第二绝缘材料的支撑层。第二绝缘材料可以具有相对于第一绝缘材料的蚀刻选择性。可以在第一模层图案和支撑层图案上形成第二模层。可以通过第二模具层和第一模具层图案形成下部电极。下电极可以与支撑层图案的侧壁接触。可以去除第一模层图案和第二模层。电介质层和上电极可以形成在下电极和支撑层图案上。

9. 发明授权

US08795541B2 Substrate processing method and substrate processing system for performing the same 有权
标题翻译：基板处理方法及其基板处理系统
公开(公告)号：US08795541B2
公开(公告)日：2014-08-05
申请号：US13314791
申请日：2011-12-08
申请人： Yong-Jhin Cho , Kun-Tack Lee , Hyo-San Lee , Young-Hoo Kim , Jung-Won Lee , Sang-Won Bae , Jung-Min Oh
发明人： Yong-Jhin Cho , Kun-Tack Lee , Hyo-San Lee , Young-Hoo Kim , Jung-Won Lee , Sang-Won Bae , Jung-Min Oh
IPC分类号： H01L21/66 , H01L21/02
CPC分类号： H01L21/67023 , B08B7/0021 , H01L21/0206 , H01L21/02104 , H01L21/31111 , H01L22/00 , H01L22/26 , H01L27/10852 , H01L28/90
摘要： In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.
摘要翻译：在超临界流体法中，将超临界流体供应到处理室中。当超临界流体处理进行时，超临界流体从处理室排出。在超临界流体处理中检测从处理室排出的超临界流体中包含的目标材料的浓度。超临界流体处理的终点可以基于检测到的目标材料的浓度来确定。

10. 发明授权

US08557651B2 Method of manufacturing a semiconductor device using an etchant 有权
标题翻译：使用蚀刻剂制造半导体器件的方法
公开(公告)号：US08557651B2
公开(公告)日：2013-10-15
申请号：US13040472
申请日：2011-03-04
申请人： Hyo-San Lee , Bo-Un Yoon , Kun-Tack Lee , Hag-Ju Cho , Sang-Jin Hyun , Hoon-Joo Na , Hyung-Seok Hong
发明人： Hyo-San Lee , Bo-Un Yoon , Kun-Tack Lee , Hag-Ju Cho , Sang-Jin Hyun , Hoon-Joo Na , Hyung-Seok Hong
IPC分类号： H01L21/8238
CPC分类号： H01L21/28
摘要： In an etchant for etching a capping layer having etching selectivity with respect to a dielectric layer, the capping layer changes compositions of the dielectric layer, to thereby control a threshold voltage of a gate electrode including the dielectric layer. The etchant includes about 0.01 to 3 percent by weight of an acid, about 10 to 40 percent by weight of a fluoride salt and a solvent. Accordingly, the dielectric layer is prevented from being damaged by the etching process for removing the capping layer and the electric characteristics of the gate electrode are improved.
摘要翻译：在蚀刻具有相对于电介质层的蚀刻选择性的封盖层的蚀刻剂中，封盖层改变介电层的组成，从而控制包括电介质层的栅电极的阈值电压。蚀刻剂包括约0.01至3重量％的酸，约10至40重量％的氟化物盐和溶剂。因此，通过用于去除封盖层的蚀刻工艺来防止电介质层损坏，并且提高了栅电极的电特性。

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