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1. 发明授权

US08790470B2 Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods 有权
标题翻译：使用这些方法使用超临界流体和室系统的蚀刻，清洁和干燥方法
公开(公告)号：US08790470B2
公开(公告)日：2014-07-29
申请号：US13326940
申请日：2011-12-15
申请人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
发明人： Hyo-san Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Taek Lim , Ha-Soo Hwang , Haldorai Yuvaraj , Jae-Mok Jung
IPC分类号： B08B3/00 , H01L21/67 , H01L21/02 , H01L21/311 , H01L27/108
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要翻译：本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品溶解还提供了制造半导体器件的方法。

2. 发明授权

US08518772B2 Fabricating method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08518772B2
公开(公告)日：2013-08-27
申请号：US13117478
申请日：2011-05-27
申请人： Keun-Hee Bai , Hyo-San Lee , Dong-Seok Lee
发明人： Keun-Hee Bai , Hyo-San Lee , Dong-Seok Lee
IPC分类号： H01L21/8242
CPC分类号： H01L27/10817 , H01L21/31111 , H01L21/31116 , H01L28/91
摘要： A fabricating method of a semiconductor device includes forming an interlayer insulation layer on a substrate, the interlayer insulation layer including a storage node contact plug, forming an etch stop layer on the interlayer insulation layer, the etch stop layer including a silicon layer or a silicon germanium layer, forming a molding insulation layer on the etch stop layer, forming a hole in the molding insulation layer by selectively etching the molding insulation layer until a portion of the etch stop layer is exposed, forming a first conductive layer conformally on an inner surface of the hole and on a top surface of the molding insulation layer, and forming a metal silicide pattern in a predetermined area of the etch stop layer exposed by the molding insulation layer by annealing the first conductive layer and the etch stop layer.
摘要翻译：半导体器件的制造方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括存储节点接触插塞，在所述层间绝缘层上形成蚀刻停止层，所述蚀刻停止层包括硅层或硅锗层，在所述蚀刻停止层上形成模制绝缘层，通过选择性地蚀刻所述模制绝缘层直到所述蚀刻停止层的一部分露出来在所述模制绝缘层中形成孔，在所述蚀刻停止层上形成第一导电层，并且在模制绝缘层的顶表面上，并且通过退火第一导电层和蚀刻停止层，在由模制绝缘层暴露的蚀刻停止层的预定区域中形成金属硅化物图案。

3. 发明申请

US20120085495A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权
公开(公告)号：US20120085495A1
公开(公告)日：2012-04-12
申请号：US13326940
申请日：2011-12-15
申请人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Tack Lim , Ha-Soo Hwang , Haldori Vuvaraj , Jae-Monk Jung
发明人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Tack Lim , Ha-Soo Hwang , Haldori Vuvaraj , Jae-Monk Jung
IPC分类号： C23F1/08 , B08B3/00
CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902
摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

4. 发明申请

US20120064727A1 SUBSTRATE TREATMENT EQUIPMENT AND METHOD OF TREATING SUBSTRATE USING THE SAME 审中-公开
标题翻译：基板处理设备和使用该基板处理基板的方法
公开(公告)号：US20120064727A1
公开(公告)日：2012-03-15
申请号：US13225696
申请日：2011-09-06
申请人： Jung-min Oh , Kun-tack Lee , Hyo-san Lee , Young-hoo Kim , Jung-won Lee , Sang-won Bae , Yong-jhin Cho
发明人： Jung-min Oh , Kun-tack Lee , Hyo-san Lee , Young-hoo Kim , Jung-won Lee , Sang-won Bae , Yong-jhin Cho
IPC分类号： H01L21/306 , B08B3/00
CPC分类号： H01L21/02057 , H01L21/02101 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/67742 , H01L21/67748
摘要： Substrate treatment equipment includes a wet treatment apparatus for treating a substrate with a solution (liquid), a drying (treatment) apparatus discrete from the wet treatment apparatus and for drying the substrate using a supercritical fluid, and a transfer device. The substrate is extracted by the transfer device from the wet treatment apparatus after the substrate has been treated and the substrate is transferred by the device while wet to the dry treatment apparatus. To this end, various elements/methods may be used to keep the substrate wet or wet the substrate. In any case, the substrate is prevented from drying naturally, i.e., from air-drying, as the substrate is being transferred from the wet treatment apparatus to the drying apparatus. Thus, equipment and method prevent defects such as water spots and the leaning of fine structures on the substrate.
摘要翻译：衬底处理设备包括用溶液（液体）处理衬底的湿处理设备，从湿处理设备离散的干燥（处理）设备，以及使用超临界流体干燥衬底和转移装置。在处理基板之后，通过转移装置从湿处理装置将基板提取出来，并且将基板通过装置湿润地转移到干燥处理装置。为此，可以使用各种元件/方法来使衬底保持湿润或湿润衬底。在任何情况下，当衬底从湿处理设备转移到干燥设备时，防止衬底自然干燥，即从空气干燥。因此，设备和方法可以防止基底上的水斑和精细结构的倾斜等缺陷。

5. 发明申请

US20110201203A1 METHODS OF FORMING A HOLE HAVING A VERTICAL PROFILE AND SEMICONDUCTOR DEVICES HAVING A VERTICAL HOLE 有权
标题翻译：形成具有垂直剖面的孔的方法和具有垂直孔的半导体器件
公开(公告)号：US20110201203A1
公开(公告)日：2011-08-18
申请号：US13025410
申请日：2011-02-11
申请人： Hyo-San Lee , Bo-Un Yoon , Kun-Tack Lee , Dae-Hyuk Kang , Seong-Ho Moon , So-Ra Han
发明人： Hyo-San Lee , Bo-Un Yoon , Kun-Tack Lee , Dae-Hyuk Kang , Seong-Ho Moon , So-Ra Han
IPC分类号： H01L21/311
CPC分类号： H01L21/31111 , H01L21/32134 , H01L21/76802 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L27/11578 , H01L27/11582 , H01L28/91 , H01L29/4236 , H01L29/66621 , H01L29/66833 , H01L29/7926
摘要： In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.
摘要翻译：在形成孔的方法中，在基板上形成绝缘层，通过绝缘层形成露出基板的预备孔。然后在基板上形成包含有机聚合物的感光层图案以填充预备孔。然后将包含氟化氢（HF）或氟（F2）的蚀刻气体提供到感光层图案上以蚀刻绝缘层，使得预备孔的宽度增加。

6. 发明申请

US20110159660A1 Methods of Forming Integrated Circuit Capacitors Having Sidewall Supports and Capacitors Formed Thereby 有权
标题翻译：形成具有侧壁支撑和形成电容器的集成电路电容器的方法
公开(公告)号：US20110159660A1
公开(公告)日：2011-06-30
申请号：US12906184
申请日：2010-10-18
申请人： Dae-Hyuk Kang , Bo-Un Yoon , Kun-Tack Lee , Woo-Gwan Shim , Ji-Hoon Cha , Im-Soo Park , Hyo-San Lee , Young-Hoo Kim , Jung-Min Oh
发明人： Dae-Hyuk Kang , Bo-Un Yoon , Kun-Tack Lee , Woo-Gwan Shim , Ji-Hoon Cha , Im-Soo Park , Hyo-San Lee , Young-Hoo Kim , Jung-Min Oh
IPC分类号： H01L21/02 , H01G13/00
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/87
摘要： In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.
摘要翻译：在形成电容器的方法中，可以在基板上形成包括第一绝缘材料的第一模层图案。第一模层图案可以具有沟槽。可以在沟槽中形成包括第二绝缘材料的支撑层。第二绝缘材料可以具有相对于第一绝缘材料的蚀刻选择性。可以在第一模层图案和支撑层图案上形成第二模层。可以通过第二模具层和第一模具层图案形成下部电极。下电极可以与支撑层图案的侧壁接触。可以去除第一模层图案和第二模层。电介质层和上电极可以形成在下电极和支撑层图案上。

7. 发明申请

US20110083807A1 Apparatus for Treating Wafers Using Supercritical Fluid 有权
标题翻译：使用超临界流体处理晶片的设备
公开(公告)号：US20110083807A1
公开(公告)日：2011-04-14
申请号：US12973963
申请日：2010-12-21
申请人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
发明人： Hyo-san Lee , Chang-ki Hong , Kun-tack Lee , Jeong-nam Han
IPC分类号： C23F1/08
CPC分类号： H01L21/67017 , H01J37/32449 , H01J37/32467 , H01J37/32715 , H01J37/32743 , H01J37/32816 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069 , H01L21/67276 , Y10T137/2931 , Y10T137/4673
摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.
摘要翻译：提供了一种使用超临界流体处理晶片的设备和方法。晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理。

8. 发明授权

US07709277B2 PAA-based etchant, methods of using same, and resultant structures 有权
标题翻译：基于PAA的蚀刻剂，使用它的方法以及所得结构
公开(公告)号：US07709277B2
公开(公告)日：2010-05-04
申请号：US11600224
申请日：2006-11-16
申请人： Hyo-san Lee , Hung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
摘要翻译：湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率：（N掺杂Si）。这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

9. 发明申请

US20070111532A1 PAA-based etchant, methods of using same, and resultant structures 有权
公开(公告)号：US20070111532A1
公开(公告)日：2007-05-17
申请号：US11600224
申请日：2006-11-16
申请人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.

10. 发明申请

US20160315019A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING A COMPOSITION FOR REMOVING PHOTORESIST AND METHODS OF REMOVING PHOTORESIST FROM A SEMICONDUCTOR SUBSTRATE 有权
标题翻译：使用组合物制造光电转换器的半导体器件的制造方法和从半导体衬底去除光电离器的方法
公开(公告)号：US20160315019A1
公开(公告)日：2016-10-27
申请号：US15084536
申请日：2016-03-30
申请人： Jung-Min OH , Mi-Hyun PARK , Hyo-San LEE , Ji-Hoon JEONG , Yong-Sun KO , In-Gi KIM , Na-Rim KIM , Sang-Tae KIM , Seong-Min KIM , Kyong-Ho LEE
发明人： Jung-Min OH , Mi-Hyun PARK , Hyo-San LEE , Ji-Hoon JEONG , Yong-Sun KO , In-Gi KIM , Na-Rim KIM , Sang-Tae KIM , Seong-Min KIM , Kyong-Ho LEE
IPC分类号： H01L21/8238 , H01L21/027 , H01L21/8234 , H01L29/16 , H01L21/311 , H01L21/02 , H01L21/3105 , G03F7/42 , H01L21/266
CPC分类号： G03F7/426 , G03F7/039 , G03F7/42 , G03F7/422 , G03F7/425 , H01L21/266 , H01L21/31133 , H01L21/823814 , H01L21/823828 , H01L29/16
摘要： A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.
摘要翻译：基于组合物的总重量，用于除去光致抗蚀剂的组合物，其包含约0.5重量％至约10重量％的烷基铵氟化物盐; 基于组合物的总重量的约1重量％至约20重量％的量的有机磺酸; 和基于组合物总重量的约70重量％至约98.5重量％的内酯类溶剂。

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