会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明申请
    • Semiconductor device having capacitor and method of fabricating the same
    • 具有电容器的半导体器件及其制造方法
    • US20070111432A1
    • 2007-05-17
    • US11593067
    • 2006-11-06
    • Jung-Min OhJeong-Nam HanChang-Ki HongWoo-Gwan ShimIm-Soo Park
    • Jung-Min OhJeong-Nam HanChang-Ki HongWoo-Gwan ShimIm-Soo Park
    • H01L21/8242
    • H01L28/91H01L21/31116H01L27/10817H01L27/10852
    • A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.
    • 可以提供具有电容器的半导体器件及其制造方法。 制造半导体器件的方法可以包括在衬底上顺序地形成蚀刻停止层和模制层,图案化模具层以形成露出蚀刻停止层的一部分的模具电极孔,通过以下步骤选择性地蚀刻暴露的蚀刻停止层: 各向同性干蚀刻工艺,以形成通过蚀刻停止层的接触电极孔,以露出衬底的一部分,在衬底上形成导电层,并去除模层上的模层上的导电层,形成圆柱形底电极 在模具和接触电极孔中。 各向同性干蚀刻工艺可以利用包括主蚀刻气体和选择性调节气体的工艺气体。 选择性调节气体可以通过各向同性湿蚀刻工艺增加蚀刻停止层的蚀刻速率超过模具层的蚀刻速率。