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1. 发明授权

US5665168A Method for cleaning semiconductor silicon wafer 失效
标题翻译：半导体硅晶片清洗方法
公开(公告)号：US5665168A
公开(公告)日：1997-09-09
申请号：US515007
申请日：1995-08-14
申请人： Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu
发明人： Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu
IPC分类号： B08B3/08 , C11D3/04 , C11D7/02 , C11D7/08 , C11D7/22 , H01L21/304 , H01L21/306 , B08B3/00
CPC分类号： H01L21/02052
摘要： A method for cleaning a semiconductor silicon wafer, which can suppress and reduce adhesion of particles to the surface of the wafer, is disclosed. The method includes the steps of cleaning the semiconductor silicon wafer by using hydrofluoric acid aqueous solution containing a surfactant, and thereafter rinsing the semiconductor silicon wafer by using pure water containing ozone.
摘要翻译：公开了一种能够抑制和降低颗粒对晶片表面的粘附性的半导体硅晶片的清洗方法。该方法包括通过使用含有表面活性剂的氢氟酸水溶液清洗半导体硅晶片的步骤，然后使用含有臭氧的纯水冲洗半导体硅晶片。

2. 发明授权

US5662743A Method of cleaning silicon wafers in cleaning baths with controlled vertical surface oscillations and controlled in/out speeds 失效
标题翻译：在具有受控垂直表面振荡和受控进/出速度的清洗浴中清洁硅晶片的方法
公开(公告)号：US5662743A
公开(公告)日：1997-09-02
申请号：US439560
申请日：1995-05-11
申请人： Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu , Morie Suzuki
发明人： Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu , Morie Suzuki
IPC分类号： C11D7/08 , H01L21/304 , H01L21/306 , B08B3/04 , C23G1/02
CPC分类号： H01L21/02052
摘要： A novel HF cleaning method of silicon wafers is provided whereby the wafers are cleaned with a lowered level of particle contamination on the surface thereof. In the method silicon wafers are immersed in a HF bath, followed by immersion in a deionized water bath. The silicon wafers are lowered into and lifted out of each bath along a direction which is substantially vertical with respect to a surface of each bath at a rate of from 1 mm/sec to 50 mm/sec. During immersion, a vertical oscillation of the surface of each bath is maintained in the range of less than 4 mm.
摘要翻译：提供一种硅晶片的新型HF清洗方法，由此在其表面上以较低的颗粒污染水平清洗晶片。在该方法中，将硅晶片浸入HF浴中，然后浸入去离子水浴中。硅晶片沿着相对于每个浴槽的表面基本上垂直的方向以1mm / sec至50mm / sec的速率下降到每个浴中并从每个浴中升出。在浸入过程中，每个槽的表面的垂直振荡保持在小于4mm的范围内。

3. 发明授权

US5626681A Method of cleaning semiconductor wafers 失效
标题翻译：清洗半导体晶圆的方法
公开(公告)号：US5626681A
公开(公告)日：1997-05-06
申请号：US544464
申请日：1995-10-18
申请人： Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu
发明人： Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu
IPC分类号： B08B3/08 , C11D7/02 , C11D7/04 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/08
摘要： An improved semiconductor wafer cleaning method capable of cleaning wafers without degrading the surface roughness of the wafers includes the steps of cleaning a polished wafer with an aqueous solution of hydrofluoric acid, then rinsing the wafer with ozone-containing water, and thereafter brush-scrubbing the wafer.
摘要翻译：能够在不降低晶片的表面粗糙度的情况下清洗晶片的改进的半导体晶片清洁方法包括以下步骤：用氢氟酸水溶液清洗抛光晶片，然后用含臭氧水冲洗晶片，然后刷洗晶圆。

4. 发明授权

US5640238A Method of inspecting particles on wafers 失效
标题翻译：在晶片上检查颗粒的方法
公开(公告)号：US5640238A
公开(公告)日：1997-06-17
申请号：US694318
申请日：1996-08-08
申请人： Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu , Morie Suzuki
发明人： Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu , Morie Suzuki
IPC分类号： G01N21/94 , G01N21/956 , H01L21/304 , H01L21/66 , G01N21/00
CPC分类号： H01L22/12
摘要： A method of inspecting particles on wafers is disclosed, wherein a first particle map is made by particle measurement on a wafer to be inspected, then a particle removing treatment is conducted to remove particles from the wafer, subsequently after a second particle map is made by particle measurement on the wafer which is subjected to the particle removing treatment, the first particle map is compared with the second particle map, and particles appearing at the immobile point common in both the first particle map and the second particle map are determined as crystal defects or surface irregularities such as scratches and particles appearing in the first particle map but those disappearing in the second particle map are determined as real dust particles or contaminants, thereby accurately detecting particles on wafers.
摘要翻译：公开了一种在晶片上检查颗粒的方法，其中通过在要检查的晶片上进行颗粒测量来制备第一颗粒图，然后进行颗粒去除处理以从晶片去除颗粒，随后在第二颗粒图由将进行了粒子去除处理的晶片上的粒子测定与第二粒子图进行比较，将第一粒子图和第二粒子图中共同的不动点的粒子确定为晶体缺陷或表面凹凸，例如出现在第一粒子图中的划痕和颗粒，而在第二颗粒图中消失的那些被确定为真实的灰尘颗粒或污染物，从而精确地检测晶片上的颗粒。

5. 发明授权

US06319845B1 Method of purifying alkaline solution and method of etching semiconductor wafers 失效
标题翻译：碱性溶液的净化方法及蚀刻半导体晶片的方法
公开(公告)号：US06319845B1
公开(公告)日：2001-11-20
申请号：US09034151
申请日：1998-03-02
申请人： Isao Uchiyama , Hiroyuki Takamatsu , Toshio Ajito
发明人： Isao Uchiyama , Hiroyuki Takamatsu , Toshio Ajito
IPC分类号： H01L213063
CPC分类号： C01D1/28
摘要： A method of purifying an alkaline solution is capable of extremely efficiently nonionizing metallic impurity ions in an alkaline solution at a low cost. A method of etching semiconductor wafers in turn is capable of etching semiconductor wafers using the purified alkaline solution without deteriorating the quality of the semiconductor wafers. A reducing agent having an oxidation potential lower than a reversible electrode potential of metallic ions existing in the alkaline solution is dissolved in the alkaline solution to thereby nonionize the metallic ions existing in the alkaline solution.
摘要翻译：纯碱性溶液的方法能够以低成本非常有效地在碱性溶液中除去金属杂质离子。依次蚀刻半导体晶片的方法能够使用纯化的碱性溶液蚀刻半导体晶片，而不会劣化半导体晶片的质量。具有低于存在于碱性溶液中的金属离子的可逆电极电位的氧化电位的还原剂溶解在碱性溶液中，从而使存在于碱性溶液中的金属离子非离子化。

6. 发明授权

US09279762B2 Apparatus and method for measuring semiconductor carrier lifetime 有权
标题翻译：测量半导体载体寿命的装置和方法
公开(公告)号：US09279762B2
公开(公告)日：2016-03-08
申请号：US13500305
申请日：2010-10-01
申请人： Kazushi Hayashi , Hiroyuki Takamatsu , Yoshito Fukumoto , Shingo Sumie
发明人： Kazushi Hayashi , Hiroyuki Takamatsu , Yoshito Fukumoto , Shingo Sumie
IPC分类号： G01N21/31 , G01N21/3563 , H01L21/66
CPC分类号： G01N21/3151 , G01N21/31 , G01N2021/3568 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.
摘要翻译：在本发明的半导体载体寿命测量装置A1中，将具有相互不同波长的至少两种类型的光照射到要测量的半导体X上，将预定测量波照射到要测量的半导体X上，反射波检测被测半导体X所反射的测量波，或检测通过半导体X的被测量的测定波的透过波，测定半导体X的载流子寿命，检测结果，以最小化误差。因此，如上所述构成的半导体载体寿命测定装置A1能够更准确地测定载流子寿命。

7. 发明申请

US20080123099A1 Photothermal conversion measuring instrument 审中-公开
标题翻译：光热转换测量仪器
公开(公告)号：US20080123099A1
公开(公告)日：2008-05-29
申请号：US11902279
申请日：2007-09-20
申请人： Eiji Takahashi , Ryo Katayama , Hiroyuki Takamatsu
发明人： Eiji Takahashi , Ryo Katayama , Hiroyuki Takamatsu
IPC分类号： G01B9/02 , G01N21/00
CPC分类号： G01N21/171 , G01N21/031
摘要： There is provided a photothermal conversion measuring instrument which can measure change in property caused by thermal effect in a sample with high sensitivity and high accuracy by a simple structure. The instrument includes a current control circuit for sequentially switching output light of a plurality of excitation light sources each outputting excitation light having a different wavelength band so that one of the output light is irradiated to the sample, a light detector for interfering measurement light transmitted through the sample with reference light and detecting the intensity of the interference light, and a signal processor for extracting the same cycle components as the switching cycle of the output light switched by the current control circuit from a signal of the interference light intensity obtained from the light detector and for obtaining a difference of signal values corresponding to each of the excitation light based on the extracted signals.
摘要翻译：提供了一种光热转换测量仪器，可以通过简单的结构，以高灵敏度和高精度测量样品中热效应引起的性能变化。该仪器包括电流控制电路，用于顺序地切换多个激发光源的输出光，每个激发光源输出具有不同波长带的激发光，使得输出光中的一个照射到样本，用于干扰测量光的光检测器，具有参考光的样本并检测干涉光的强度;以及信号处理器，用于从由光获得的干涉光强度的信号中提取与由电流控制电路切换的输出光的切换周期相同的周期分量并且用于基于所提取的信号获得与每个激发光对应的信号值的差异。

8. 发明授权

US07268114B2 Protein and process for preparing the same 失效
标题翻译：蛋白质及其制备方法
公开(公告)号：US07268114B2
公开(公告)日：2007-09-11
申请号：US10365231
申请日：2003-02-12
申请人： Fusao Makishima , Hiroyuki Takamatsu , Hideo Miki , Shinji Kawai , Michio Kimura , Tomoaki Matsumoto , Mieko Katsuura , Koichi Enomoto , Yusuke Satoh
发明人： Fusao Makishima , Hiroyuki Takamatsu , Hideo Miki , Shinji Kawai , Michio Kimura , Tomoaki Matsumoto , Mieko Katsuura , Koichi Enomoto , Yusuke Satoh
IPC分类号： A61K38/18 , C07K14/51 , C12N15/12 , C12N1/21 , C12P21/02 , A61F2/30 , A61F2/28
CPC分类号： C07K14/51 , A61K38/00 , Y10S514/801
摘要： A protein having amino acid sequence in SEQ ID NO: 1 of the Sequence Listing derived from human MP52, and a dimer protein thereof. A homodimer protein described above can be obtained by constructing a plasmid containing DNA coding amino acid sequence in SEQ ID NO: 1 of the Sequence Listing with a methionine at the N-terminus, introducing the plasmid into E. coli for transformation, solubilizing inclusion bodies obtained by culturing the transformant, purifying the monomer protein from the solubilized solution, refolding the monomer protein into a dimer protein and purifying the same. The homodimer protein described above is useful as a pharmaceutical composition for treating cartilage and bone diseases.
摘要翻译：衍生自人MP52的序列表的SEQ ID NO：1中具有氨基酸序列的蛋白质及其二聚体蛋白质。可以通过在N末端构建含有序列表的SEQ ID NO：1的DNA编码氨基酸序列的质粒与甲硫氨酸在N末端引入，将质粒导入大肠杆菌进行转化，从而增溶包涵体通过培养转化体获得，从溶解的溶液中纯化单体蛋白质，将单体蛋白重折叠成二聚体蛋白质并进行纯化。上述同型二聚体蛋白质可用作治疗软骨和骨疾病的药物组合物。

9. 发明授权

US5760597A Method of and apparatus for measuring lifetime of carriers in semiconductor sample 失效
标题翻译：测量半导体样品中载流子寿命的方法和装置
公开(公告)号：US5760597A
公开(公告)日：1998-06-02
申请号：US659515
申请日：1996-06-06
申请人： Naoyuki Yoshida , Hiroyuki Takamatsu , Shingo Sumie , Yutaka Kawata , Hidehisa Hashizume , Futoshi Ojima , Yuji Hirao
发明人： Naoyuki Yoshida , Hiroyuki Takamatsu , Shingo Sumie , Yutaka Kawata , Hidehisa Hashizume , Futoshi Ojima , Yuji Hirao
IPC分类号： G01N21/88 , G01N21/00 , G01N21/956 , G01R31/265 , G01R31/28 , H01L21/66 , G01R31/26
CPC分类号： G01R31/2656 , G01R31/2831 , H01L22/14
摘要： In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.
摘要翻译：除了微波和激发光之外，偏光也照射在使用含有电解质的溶液钝化的半导体样品的表面上。偏置光的照射增加溶液中存在的离子物质的量，极大地改变了半导体样品的表面电位，并抑制了表面复合。这使得可以以高精度测量半导体样品内存在的载流子的寿命，而不受表面复合的影响。

10. 发明授权

US09160219B2 Axial gap type brushless motor 有权
标题翻译：轴向间隙式无刷电机
公开(公告)号：US09160219B2
公开(公告)日：2015-10-13
申请号：US13520541
申请日：2010-12-06
申请人： Hiroyuki Takamatsu , Koji Inoue , Kenichi Inoue , Takashi Hase , Osamu Ozaki , Chikara Ichihara , Masakatsu Maruyama , Yasushi Maeda , Hiroyuki Mitani
发明人： Hiroyuki Takamatsu , Koji Inoue , Kenichi Inoue , Takashi Hase , Osamu Ozaki , Chikara Ichihara , Masakatsu Maruyama , Yasushi Maeda , Hiroyuki Mitani
IPC分类号： H02K21/24 , H02K1/02 , H02K1/06 , H02K1/12 , H02K1/24 , H02K1/27 , H02K3/04 , H02K21/46
CPC分类号： H02K21/24 , H02K1/02 , H02K1/06 , H02K1/12 , H02K1/246 , H02K1/2793 , H02K3/04 , H02K21/46
摘要： Disclosed is a brushless motor (1A) which is an axial gap type brushless motor (1A) wherein stators (3A, 4A) comprising a coil (41) and a rotor (2) comprising a permanent magnet (23) are arranged with a gap therebetween in the axial direction. The coil (41) is a band-like wire which is spirally wound such that the width direction of the band-like wire generally coincides with the direction of the magnetic flux that is generated by the permanent magnet (23) of the rotor (2). Consequently, the axial gap type brushless motor (1A) having the above-described structure can be further reduced in eddy current loss in comparison to conventional brushless motors.
摘要翻译：公开了一种无刷电动机（1A），其是轴向间隙型无刷电动机（1A），其中包括线圈（41）的定子（3A，4A）和包括永磁体（23）的转子（2）在它们之间。线圈（41）是螺旋卷绕的带状线，使得带状线的宽度方向大致与由转子（2）的永磁体（23）产生的磁通的方向一致）。因此，与传统的无刷电动机相比，具有上述结构的轴向间隙型无刷电动机（1A）可以进一步降低涡流损耗。

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