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1. 发明授权

US5760597A Method of and apparatus for measuring lifetime of carriers in semiconductor sample 失效
标题翻译：测量半导体样品中载流子寿命的方法和装置
公开(公告)号：US5760597A
公开(公告)日：1998-06-02
申请号：US659515
申请日：1996-06-06
申请人： Naoyuki Yoshida , Hiroyuki Takamatsu , Shingo Sumie , Yutaka Kawata , Hidehisa Hashizume , Futoshi Ojima , Yuji Hirao
发明人： Naoyuki Yoshida , Hiroyuki Takamatsu , Shingo Sumie , Yutaka Kawata , Hidehisa Hashizume , Futoshi Ojima , Yuji Hirao
IPC分类号： G01N21/88 , G01N21/00 , G01N21/956 , G01R31/265 , G01R31/28 , H01L21/66 , G01R31/26
CPC分类号： G01R31/2656 , G01R31/2831 , H01L22/14
摘要： In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.
摘要翻译：除了微波和激发光之外，偏光也照射在使用含有电解质的溶液钝化的半导体样品的表面上。偏置光的照射增加溶液中存在的离子物质的量，极大地改变了半导体样品的表面电位，并抑制了表面复合。这使得可以以高精度测量半导体样品内存在的载流子的寿命，而不受表面复合的影响。

2. 发明授权

US5790252A Method of and apparatus for determining residual damage to wafer edges 失效
标题翻译：确定晶片边缘残余损伤的方法和装置
公开(公告)号：US5790252A
公开(公告)日：1998-08-04
申请号：US720065
申请日：1996-09-27
申请人： Hisashi Masumura , Hideo Kudo , Shingo Sumie , Hidetoshi Tsunaki , Yuji Hirao , Noritaka Morioka
发明人： Hisashi Masumura , Hideo Kudo , Shingo Sumie , Hidetoshi Tsunaki , Yuji Hirao , Noritaka Morioka
IPC分类号： H01L21/66 , G01B9/02
CPC分类号： H01L22/12
摘要： The invention seeks to permit evaluation of edge portion of like inclined surfaces of wafer with high accuracy without the conventional destruction process based on the selective etching process but with the contact-free, non-destructive and high accuracy optical acoustical process. To this end, the invention features determination of residual damages as crystal damages caused to wafer edge in an optical acoustical process, which comprises the steps of causing a measurement probe to face each of three exciting laser beam irradiation points on upper and lower inclined surfaces and at an accurate end of an edge portion of a semiconductor wafer, and determining a thermal response induced by the exciting laser beam by a laser interference process.
摘要翻译：本发明试图允许以高精度评估晶片的倾斜表面的边缘部分，而不需要基于选择性蚀刻工艺的常规的破坏过程，而是利用无接触的非破坏性和高精度的光学声学过程。为此，本发明的特征在于确定作为在光学声学过程中对晶片边缘引起的晶体损伤的残余损伤，其包括以下步骤：使测量探针面对上和下倾斜表面上的三个激发激光束照射点中的每一个，在半导体晶片的边缘部分的精确端处，并且通过激光干涉处理确定由激发激光束引起的热响应。

3. 发明授权

US08564388B2 Relay, control circuit, and method for controlling control circuit 失效
标题翻译：继电器，控制电路和控制电路控制方法
公开(公告)号：US08564388B2
公开(公告)日：2013-10-22
申请号：US13641412
申请日：2011-04-13
申请人： Yuji Hirao , Koichi Futsuhara
发明人： Yuji Hirao , Koichi Futsuhara
IPC分类号： H01H3/00
CPC分类号： H01H50/642 , H01H3/001 , H01H51/20
摘要： The relay (KM) has at least first and second contact points (a1, a2), the states of which are switched from an open state to a close state by the drive of an electromagnet (32). The first and second contact points (a1, a2) switch the states between the open state and the close state by enabling movable contact pieces (31) to move with respect to respective fixed contact pieces (30) by using a power transmission mechanism (21) movable by the drive of the electromagnet (32). The first and second contact points (a1, a2) are set so that the second contact point (a2) is switched to the close state after the first contact point (a1) is switched to the close state and the first contact point (a1) is switched to the open state after the second contact point (a2) is switched to the open state.
摘要翻译：继电器（KM）具有至少第一和第二接触点（a1，a2），其状态通过电磁体（32）的驱动从打开状态切换到关闭状态。第一和第二接触点（a1，a2）通过使用动力传递机构（21）使可动接触片（31）能够相对于固定接触片（30）移动而在打开状态和关闭状态之间切换状态）可通过电磁体（32）的驱动而移动。第一和第二接触点（a1，a2）被设定为使得第二接触点（a2）在第一接触点（a1）切换到闭合状态之后切换到闭合状态，并且第一接触点（a1）在第二接触点（a2）切换到打开状态之后切换到打开状态。

4. 发明申请

US20130033345A1 Relay, Control Circuit, and Method for Controlling Control Circuit 失效
标题翻译：继电器，控制电路和控制电路控制方法
公开(公告)号：US20130033345A1
公开(公告)日：2013-02-07
申请号：US13641412
申请日：2011-04-13
申请人： Yuji Hirao , Koichi Futsuhara
发明人： Yuji Hirao , Koichi Futsuhara
IPC分类号： H01H3/00
CPC分类号： H01H50/642 , H01H3/001 , H01H51/20
摘要： The relay (KM) has at least first and second contact points (a1, a2), the states of which are switched from an open state to a close state by the drive of an electromagnet (32). The first and second contact points (a1, a2) switch the states between the open state and the close state by enabling movable contact pieces (31) to move with respect to respective fixed contact pieces (30) by using a power transmission mechanism (21) movable by the drive of the electromagnet (32). The first and second contact points (a1, a2) are set so that the second contact point(a2) is switched to the close state after the first contact point(a1) is switched to the close state and the first contact point(a1) is switched to the open state after the second contact point(a2) is switched to the open state.
摘要翻译：继电器（KM）具有至少第一和第二接触点（a1，a2），其状态通过电磁体（32）的驱动从打开状态切换到关闭状态。第一和第二接触点（a1，a2）通过使用动力传递机构（21）使可动接触片（31）能够相对于固定接触片（30）移动而在打开状态和关闭状态之间切换状态）可通过电磁体（32）的驱动而移动。第一和第二接触点（a1，a2）被设定为使得第二接触点（a2）在第一接触点（a1）切换到闭合状态之后切换到闭合状态，并且第一接触点（a1）在第二接触点（a2）切换到打开状态之后切换到打开状态。

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