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1. 发明授权

US06319845B1 Method of purifying alkaline solution and method of etching semiconductor wafers 失效
标题翻译：碱性溶液的净化方法及蚀刻半导体晶片的方法
公开(公告)号：US06319845B1
公开(公告)日：2001-11-20
申请号：US09034151
申请日：1998-03-02
申请人： Isao Uchiyama , Hiroyuki Takamatsu , Toshio Ajito
发明人： Isao Uchiyama , Hiroyuki Takamatsu , Toshio Ajito
IPC分类号： H01L213063
CPC分类号： C01D1/28
摘要： A method of purifying an alkaline solution is capable of extremely efficiently nonionizing metallic impurity ions in an alkaline solution at a low cost. A method of etching semiconductor wafers in turn is capable of etching semiconductor wafers using the purified alkaline solution without deteriorating the quality of the semiconductor wafers. A reducing agent having an oxidation potential lower than a reversible electrode potential of metallic ions existing in the alkaline solution is dissolved in the alkaline solution to thereby nonionize the metallic ions existing in the alkaline solution.
摘要翻译：纯碱性溶液的方法能够以低成本非常有效地在碱性溶液中除去金属杂质离子。依次蚀刻半导体晶片的方法能够使用纯化的碱性溶液蚀刻半导体晶片，而不会劣化半导体晶片的质量。具有低于存在于碱性溶液中的金属离子的可逆电极电位的氧化电位的还原剂溶解在碱性溶液中，从而使存在于碱性溶液中的金属离子非离子化。

2. 发明授权

US6110839A Method of purifying alkaline solution and method of etching semiconductor wafers 失效
标题翻译：碱性溶液的净化方法及蚀刻半导体晶片的方法
公开(公告)号：US6110839A
公开(公告)日：2000-08-29
申请号：US703645
申请日：1996-08-27
申请人： Masami Nakano , Isao Uchiyama , Toshio Ajito , Hideo Kudo
发明人： Masami Nakano , Isao Uchiyama , Toshio Ajito , Hideo Kudo
IPC分类号： C01D1/28 , C30B29/06 , C30B33/10 , H01L21/308 , B44C1/22
CPC分类号： C01D1/28
摘要： A method of purifying an alkaline solution includes dissolving metallic silicon and/or silicon compounds in the alkaline solution and non-ionizing metallic ions in the alkaline solution with reaction products generated when the metallic silicon and/or silicon compounds are dissolved therein. This purifying method is capable of remarkably decreasing metallic ions in the alkaline solution at a low-cost by an easy operation. A method of etching semiconductor wafers includes purifying an alkaline solution by non-ionizing metallic ions in the alkaline solution and etching the semiconductor wafers by using the purified alkaline solution. According to this etching method, the metallic contamination level due to the etching of the semiconductor wafers is greatly decreased, there being neither deterioration in the wafer quality nor deterioration in the characteristic of the semiconductor device.
摘要翻译：纯化碱性溶液的方法包括在金属硅和/或硅化合物溶解时产生的反应产物将金属硅和/或硅化合物溶解在碱性溶液中，并在碱性溶液中溶解非电离金属离子。该纯化方法能够通过简单的操作以低成本显着降低碱性溶液中的金属离子。蚀刻半导体晶片的方法包括通过在碱性溶液中非离子化金属离子来纯化碱性溶液，并通过使用纯化的碱性溶液蚀刻半导体晶片。根据该蚀刻方法，由于半导体晶片的蚀刻而导致的金属污染程度大大降低，晶片质量不会降低，也不会降低半导体器件的特性。

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