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1. 发明授权

US07807557B2 Method of forming a semiconductor device having a trapping film for charge accumulation 有权
标题翻译：形成具有用于电荷累积的捕获膜的半导体器件的方法
公开(公告)号：US07807557B2
公开(公告)日：2010-10-05
申请号：US11806887
申请日：2007-06-05
申请人： Koji Yoshida , Masataka Kusumi , Hiroaki Kuriyama , Fumihiko Noro , Nobuyoshi Takahashi
发明人： Koji Yoshida , Masataka Kusumi , Hiroaki Kuriyama , Fumihiko Noro , Nobuyoshi Takahashi
IPC分类号： H01L21/76
CPC分类号： H01L29/792 , H01L21/0217 , H01L21/02211 , H01L21/02222 , H01L21/02271 , H01L21/02337 , H01L21/28282 , H01L21/3125 , H01L21/3185 , H01L21/76834 , H01L27/115 , H01L27/11568 , H01L29/4234 , H01L29/511 , H01L29/7923
摘要： A semiconductor device includes: source/drain regions formed in a semiconductor substrate; a trapping film for storing information by accumulating charges, the trapping film being formed in a region on the semiconductor substrate which includes a region on a channel region between the source/drain regions; and gate electrodes formed on the trapping film. A silicon nitride film containing carbon is formed by low pressure CVD using an organic material so as to cover the gate electrodes and a part of the trapping film which is located between adjacent gate electrodes.
摘要翻译：半导体器件包括：形成在半导体衬底中的源/漏区; 用于通过累积电荷来存储信息的捕集膜，所述捕获膜形成在所述半导体衬底上的包括所述源极/漏极区之间的沟道区域上的区域的区域中; 以及形成在捕获膜上的栅电极。通过使用有机材料的低压CVD形成含有碳的氮化硅膜，以覆盖位于相邻栅电极之间的栅电极和捕获膜的一部分。

2. 发明申请

US20080048247A1 Semiconductor device and semiconductor device fabrication method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20080048247A1
公开(公告)日：2008-02-28
申请号：US11806887
申请日：2007-06-05
申请人： Koji Yoshida , Masataka Kusumi , Hiroaki Kuriyama , Fumihiko Noro , Nobuyoshi Takahashi
发明人： Koji Yoshida , Masataka Kusumi , Hiroaki Kuriyama , Fumihiko Noro , Nobuyoshi Takahashi
IPC分类号： H01L29/792 , H01L21/336 , H01L21/4763
CPC分类号： H01L29/792 , H01L21/0217 , H01L21/02211 , H01L21/02222 , H01L21/02271 , H01L21/02337 , H01L21/28282 , H01L21/3125 , H01L21/3185 , H01L21/76834 , H01L27/115 , H01L27/11568 , H01L29/4234 , H01L29/511 , H01L29/7923
摘要： A semiconductor device includes: source/drain regions formed in a semiconductor substrate; a trapping film for storing information by accumulating charges, the trapping film being formed in a region on the semiconductor substrate which includes a region on a channel region between the source/drain regions; and gate electrodes formed on the trapping film. A silicon nitride film containing carbon is formed by low pressure CVD using an organic material so as to cover the gate electrodes and a part of the trapping film which is located between adjacent gate electrodes.
摘要翻译：半导体器件包括：形成在半导体衬底中的源/漏区; 用于通过累积电荷来存储信息的捕集膜，所述捕获膜形成在所述半导体衬底上的包括所述源极/漏极区之间的沟道区域上的区域的区域中; 以及形成在捕获膜上的栅电极。通过使用有机材料的低压CVD形成含有碳的氮化硅膜，以覆盖位于相邻栅电极之间的栅电极和捕获膜的一部分。

3. 发明申请

US20060035418A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060035418A1
公开(公告)日：2006-02-16
申请号：US11187958
申请日：2005-07-25
申请人： Koji Yoshida , Keita Takahashi , Fumihiko Noro , Masatoshi Arai , Nobuyoshi Takahashi
发明人： Koji Yoshida , Keita Takahashi , Fumihiko Noro , Masatoshi Arai , Nobuyoshi Takahashi
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/115 , H01L27/11568
摘要： First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.
摘要翻译：首先，在第一导电类型的半导体区域上，形成通过累积电荷来存储信息的捕获膜。然后，捕获膜形成有多个开口，并且第二导电类型的杂质离子从形成的开口注入到半导体区域中，从而在半导体区域的部分中形成多个第二导电类型的扩散层分别位于开口下方。形成绝缘膜以覆盖位于开口的捕获膜的边缘，然后在含氧气氛中对半导体区域进行热处理，以氧化扩散层的上部。因此，绝缘氧化膜分别形成在扩散层的上部。随后，在包括其边缘的捕获膜上形成导电膜以形成电极。

4. 发明授权

US07060627B2 Method of decreasing charging effects in oxide-nitride-oxide (ONO) memory arrays 失效
标题翻译：降低氧化物 - 氧化物（ONO）存储器阵列中的充电效应的方法
公开(公告)号：US07060627B2
公开(公告)日：2006-06-13
申请号：US10659042
申请日：2003-09-09
申请人： Micha Gutman , Yakov Roizin , Menachem Vofsy , Efraim Aloni , Avi Ben-Gigi , Fumihiko Noro , Masatoshi Arai , Nobuyoshi Takahashi , Koji Yoshida
发明人： Micha Gutman , Yakov Roizin , Menachem Vofsy , Efraim Aloni , Avi Ben-Gigi , Fumihiko Noro , Masatoshi Arai , Nobuyoshi Takahashi , Koji Yoshida
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/66833
摘要： A fieldless array includes a semiconductor substrate, a plurality of oxide-nitride-oxide (ONO) structures formed over the upper surface of the semiconductor substrate, and a plurality of word lines formed over the ONO structures, wherein each of the ONO structures is substantially covered by one of the word lines. The word lines (typically polysilicon) block UV irradiation during subsequent processing steps, thereby substantially preventing electrons from being trapped in the silicon nitride layer of the ONO structure. As a result, the threshold voltages of the fieldless array transistors do not severely increase as the width of the fieldless array transistors decrease.
摘要翻译：无场阵列包括半导体衬底，形成在半导体衬底的上表面上的多个氧化物 - 氮化物氧化物（ONO）结构，以及形成在ONO结构上的多个字线，其中每个ONO结构基本上被一条字线覆盖。字线（通常为多晶硅）在随后的处理步骤期间阻挡UV照射，从而基本上防止电子被捕获在ONO结构的氮化硅层中。结果，无栅阵列晶体管的阈值电压随着无栅阵列晶体管的宽度减小而不会严重增加。

5. 发明申请

US20050054161A1 Method of decreasing charging effects in oxide-nitride-oxide (ONO) memory arrays 失效
标题翻译：降低氧化物 - 氧化物（ONO）存储器阵列中的充电效应的方法
公开(公告)号：US20050054161A1
公开(公告)日：2005-03-10
申请号：US10659042
申请日：2003-09-09
申请人： Micha Gutman , Yakov Roizin , Menachem Vofsy , Efraim Aloni , Avi Ben-Gigi , Fumihiko Noro , Masatoshi Arai , Nobuyoshi Takahashi , Koji Yoshida
发明人： Micha Gutman , Yakov Roizin , Menachem Vofsy , Efraim Aloni , Avi Ben-Gigi , Fumihiko Noro , Masatoshi Arai , Nobuyoshi Takahashi , Koji Yoshida
IPC分类号： H01L21/336 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/66833
摘要： A fieldless array includes a semiconductor substrate, a plurality of oxide-nitride-oxide (ONO) structures formed over the upper surface of the semiconductor substrate, and a plurality of word lines formed over the ONO structures, wherein each of the ONO structures is substantially covered by one of the word lines. The word lines (typically polysilicon) block UV irradiation during subsequent processing steps, thereby substantially preventing electrons from being trapped in the silicon nitride layer of the ONO structure. As a result, the threshold voltages of the fieldless array transistors do not severely increase as the width of the fieldless array transistors decrease.
摘要翻译：无场阵列包括半导体衬底，形成在半导体衬底的上表面上的多个氧化物 - 氮化物氧化物（ONO）结构，以及形成在ONO结构上的多个字线，其中每个ONO结构基本上被一条字线覆盖。字线（通常为多晶硅）在随后的处理步骤期间阻挡UV照射，从而基本上防止电子被捕获在ONO结构的氮化硅层中。结果，无栅阵列晶体管的阈值电压随着无栅阵列晶体管的宽度减小而不会严重增加。

6. 发明授权

US07951679B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07951679B2
公开(公告)日：2011-05-31
申请号：US11187958
申请日：2005-07-25
申请人： Koji Yoshida , Keita Takahashi , Fumihiko Noro , Masatoshi Arai , Nobuyoshi Takahashi
发明人： Koji Yoshida , Keita Takahashi , Fumihiko Noro , Masatoshi Arai , Nobuyoshi Takahashi
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11568
摘要： First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.
摘要翻译：首先，在第一导电类型的半导体区域上，形成通过累积电荷来存储信息的捕获膜。然后，捕获膜形成有多个开口，并且第二导电类型的杂质离子从形成的开口注入到半导体区域中，从而在半导体区域的部分中形成多个第二导电类型的扩散层分别位于开口下方。形成绝缘膜以覆盖位于开口的捕获膜的边缘，然后在含氧气氛中对半导体区域进行热处理，以氧化扩散层的上部。因此，绝缘氧化膜分别形成在扩散层的上部。随后，在包括其边缘的捕获膜上形成导电膜以形成电极。

7. 发明授权

US07439577B2 Semiconductor memory and method for manufacturing the same 有权
标题翻译：半导体存储器及其制造方法
公开(公告)号：US07439577B2
公开(公告)日：2008-10-21
申请号：US11495780
申请日：2006-07-31
申请人： Takahiko Hashidzume , Nobuyoshi Takahashi , Koji Yoshida , Keita Takahashi , Kiyoshi Kurihara , Yoshiya Moriyama
发明人： Takahiko Hashidzume , Nobuyoshi Takahashi , Koji Yoshida , Keita Takahashi , Kiyoshi Kurihara , Yoshiya Moriyama
IPC分类号： H01L29/792
CPC分类号： H01L27/115 , H01L27/11568
摘要： A semiconductor memory is provided with memory cells including bit lines made of a diffusion layer formed in a semiconductor substrate, charge-trapping gate insulating films formed between the bit lines and word lines formed on the gate insulating films. An interlayer insulating film is formed over the memory cells and bit line contact plugs are formed in the interlayer insulating film to be connected to the bit lines. Further, a light blocking film is formed on at least part of the interlayer insulating film covering the memory cells and part of the light blocking film formed on the interlayer insulating film extends from the surface to the inside of the interlayer insulating film in the neighborhood of the bit line contact plugs.
摘要翻译：半导体存储器设置有存储单元，存储单元包括由在半导体衬底中形成的扩散层构成的位线，形成在位线和形成在栅极绝缘膜上的字线之间的电荷俘获栅极绝缘膜。在存储单元之上形成层间绝缘膜，并且在层间绝缘膜中形成位线接触插塞以连接到位线。此外，在覆盖存储单元的层间绝缘膜的至少一部分上形成遮光膜，并且形成在层间绝缘膜上的遮光膜的一部分从层间绝缘膜的表面延伸到附近的层间绝缘膜的内部位线接触插头。

8. 发明申请

US20070108509A1 Semiconductor memory and method for manufacturing the same 有权
标题翻译：半导体存储器及其制造方法
公开(公告)号：US20070108509A1
公开(公告)日：2007-05-17
申请号：US11495780
申请日：2006-07-31
申请人： Takahiko Hashidzume , Nobuyoshi Takahashi , Koji Yoshida , Keita Takahashi , Kiyoshi Kurihara , Yoshiya Moriyama
发明人： Takahiko Hashidzume , Nobuyoshi Takahashi , Koji Yoshida , Keita Takahashi , Kiyoshi Kurihara , Yoshiya Moriyama
IPC分类号： H01L29/792
CPC分类号： H01L27/115 , H01L27/11568
摘要： A semiconductor memory is provided with memory cells including bit lines made of a diffusion layer formed in a semiconductor substrate, charge-trapping gate insulating films formed between the bit lines and word lines formed on the gate insulating films. An interlayer insulating film is formed over the memory cells and bit line contact plugs are formed in the interlayer insulating film to be connected to the bit lines. Further, a light blocking film is formed on at least part of the interlayer insulating film covering the memory cells and part of the light blocking film formed on the interlayer insulating film extends from the surface to the inside of the interlayer insulating film in the neighborhood of the bit line contact plugs.
摘要翻译：半导体存储器设置有存储单元，存储单元包括由在半导体衬底中形成的扩散层构成的位线，形成在位线和形成在栅极绝缘膜上的字线之间的电荷俘获栅极绝缘膜。在存储单元之上形成层间绝缘膜，并且在层间绝缘膜中形成位线接触插塞以连接到位线。此外，在覆盖存储单元的层间绝缘膜的至少一部分上形成遮光膜，并且形成在层间绝缘膜上的遮光膜的一部分从层间绝缘膜的表面延伸到附近的层间绝缘膜的内部位线接触插头。

9. 发明授权

US09129590B2 Audio encoding device using concealment processing and audio decoding device using concealment processing 有权
标题翻译：使用隐藏处理的音频编码装置和使用隐藏处理的音频解码装置
公开(公告)号：US09129590B2
公开(公告)日：2015-09-08
申请号：US12528671
申请日：2008-02-29
申请人： Takuya Kawashima , Hiroyuki Ehara , Koji Yoshida
发明人： Takuya Kawashima , Hiroyuki Ehara , Koji Yoshida
IPC分类号： G10L19/00 , G10L19/005 , G10L19/12
CPC分类号： G10L19/005 , G10L19/12
摘要： Disclosed are an audio encoding device and an audio decoding device which reduce degradation of subjective quality of a decoding signal caused by power mismatch of a decoding signal which is generated by a concealing process upon disappearance of a frame. When a frame is lost, a past encoding parameter is used to obtain a concealed LPC of the current frame and a concealed sound source parameter. A normal CELP decoding is performed from the obtained concealed sound source parameter. Correction is performed by using a conceal parameter on the obtained concealed LPC and the concealed sound source signal. The power of the corrected concealed sound source signal is adjusted to match a reference sound source power. A filter gain of the synthesis filter is adjusted so as to adjust the power of a decoded sound signal to the power of a decoded sound signal during an error-free state. Moreover, a synthesis filter gain adjusting coefficient is calculated by using an estimated normalized residual power so that a filter gain of a synthesis filter formed by using a concealed LPC is a filter gain during an error-free state.
摘要翻译：公开了一种音频编码装置和音频解码装置，其减少由于帧消失时由隐藏处理产生的解码信号的功率失配引起的解码信号的主观质量的劣化。当帧丢失时，使用过去的编码参数来获得当前帧的隐藏的LPC和隐藏的声源参数。从获得的隐藏声源参数执行正常的CELP解码。通过对所获得的隐蔽LPC和隐藏的声源信号使用隐藏参数来执行校正。校正的隐蔽声源信号的功率被调整以匹配参考声源功率。调整合成滤波器的滤波器增益，以便在无错误状态期间将解码声音信号的功率调整为解码声音信号的功率。此外，通过使用估计的归一化剩余功率来计算合成滤波器增益调整系数，使得通过使用隐藏的LPC形成的合成滤波器的滤波器增益在无错误状态期间是滤波器增益。

10. 发明授权

US09039604B2 Endoscope system and method of controlling endoscope system 有权
标题翻译：内窥镜系统及内窥镜系统控制方法
公开(公告)号：US09039604B2
公开(公告)日：2015-05-26
申请号：US13565645
申请日：2012-08-02
申请人： Koji Yoshida
发明人： Koji Yoshida
IPC分类号： A61B1/00 , A61B1/12 , A61B1/04 , A61M37/00 , A61M25/00 , A61M5/32 , A61M31/00 , A61B17/34 , A61B19/00
CPC分类号： A61B1/00006 , A61B1/126 , A61B17/3421 , A61B17/3474 , A61B90/70
摘要： An endoscope system including an endoscope insertion part to be inserted into a body cavity via a trocar stabbed in a body wall, the endoscope system comprising: a detecting device detecting whether a tip of the endoscope insertion part has been drawn inside the trocar; and a trocar cleaning device cleaning the inside of the trocar by supplying a predetermined fluid into the trocar when it is detected by the detecting device that the tip of the endoscope insertion part has been drawn inside the trocar.
摘要翻译：一种内窥镜系统，包括：内窥镜插入部，经由穿过体壁的套针针插入到体腔内，所述内窥镜系统包括：检测装置，检测所述内窥镜插入部的尖端是否已经在所述套针针内被拉出; 以及套管针清洁装置，其通过在所述检测装置检测到所述内窥镜插入部的前端已经被拉出所述套针针时将规定的流体供给到所述套针针内而清洗所述套针针的内部。

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