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1. 发明授权

US5892291A Registration accuracy measurement mark 失效
标题翻译：注册精度测量标记
公开(公告)号：US5892291A
公开(公告)日：1999-04-06
申请号：US670313
申请日：1996-06-27
申请人： Koichiro Narimatsu , Shigenori Yamashita , Nobuyuki Yoshioka , Shinya Soeda , Atsushi Hachisuka , Koji Taniguchi , Yuki Miyamoto , Takayuki Saito , Ayumi Minamide
发明人： Koichiro Narimatsu , Shigenori Yamashita , Nobuyuki Yoshioka , Shinya Soeda , Atsushi Hachisuka , Koji Taniguchi , Yuki Miyamoto , Takayuki Saito , Ayumi Minamide
IPC分类号： G03F1/36 , G03F1/42 , G03F7/20 , G03F9/00 , H01L21/027 , H05K1/02 , H01L23/544
CPC分类号： G03F7/706 , G03F7/70633 , Y10T428/24802 , Y10T428/24917
摘要： The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.
摘要翻译：本发明包括形成在第一层中的第一半导体元件形成元件，通过与第一半导体元件形成元件相同的制造步骤形成的第一测量标记，形成在第一层之上的第二层中的第二半导体元件形成元件，以及在与第二半导体元件形成部件相同的制造步骤中形成的用于测量第一和第二半导体元件形成部件之间的配准精度的第二测量标记。第一测量标记具有在照射光时受到与第一半导体元件形成部件相同的像差影响的图案，并且第二测量标记具有受光照射时受到与第二半导体元件形成部件相同的像差影响的图案。因此，可以提供考虑到像差影响的配准精度测量标记。

2. 发明授权

US06323560B1 Registration accuracy measurement mark, method of repairing defect of the mark, photomask having the mark, method of manufacturing the photo mask and method of exposure thereof 有权
标题翻译：注册精度测量标记，修理标记缺陷的方法，具有标记的光掩模，制造光掩模的方法及其曝光方法
公开(公告)号：US06323560B1
公开(公告)日：2001-11-27
申请号：US09492750
申请日：2000-01-27
申请人： Koichiro Narimatsu , Shigenori Yamashita , Nobuyuki Yoshioka , Shinya Soeda , Atsushi Hachisuka , Koji Taniguchi , Yuki Miyamoto , Takayuki Saito , Ayumi Minamide
发明人： Koichiro Narimatsu , Shigenori Yamashita , Nobuyuki Yoshioka , Shinya Soeda , Atsushi Hachisuka , Koji Taniguchi , Yuki Miyamoto , Takayuki Saito , Ayumi Minamide
IPC分类号： H01L2358
CPC分类号： G03F7/706 , G03F7/70633 , Y10T428/24802 , Y10T428/24917
摘要： The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.
摘要翻译：本发明包括形成在第一层中的第一半导体元件形成元件，通过与第一半导体元件形成元件相同的制造步骤形成的第一测量标记，形成在第一层之上的第二层中的第二半导体元件形成元件，以及在与第二半导体元件形成部件相同的制造步骤中形成的用于测量第一和第二半导体元件形成部件之间的配准精度的第二测量标记。第一测量标记具有在照射光时受到与第一半导体元件形成部件相同的像差影响的图案，并且第二测量标记具有受光照射时受到与第二半导体元件形成部件相同的像差影响的图案。因此，可以提供考虑到像差影响的配准精度测量标记。

3. 发明授权

US6068952A Registration accuracy measurement mark, method of repairing defect of the mark, photomask having the mark, method of manufacturing the photomask and method of exposure thereof 有权
标题翻译：注册精度测量标记，修理标记缺陷的方法，具有标记的光掩模，制造光掩模的方法及其曝光方法
公开(公告)号：US6068952A
公开(公告)日：2000-05-30
申请号：US231664
申请日：1999-01-15
申请人： Koichiro Narimatsu , Shigenori Yamashita , Nobuyuki Yoshioka , Shinya Soeda , Atsushi Hachisuka , Koji Taniguchi , Yuki Miyamoto , Takayuki Saito , Ayumi Minamide
发明人： Koichiro Narimatsu , Shigenori Yamashita , Nobuyuki Yoshioka , Shinya Soeda , Atsushi Hachisuka , Koji Taniguchi , Yuki Miyamoto , Takayuki Saito , Ayumi Minamide
IPC分类号： G03F1/36 , G03F1/42 , G03F7/20 , G03F9/00 , H01L21/027 , H05K1/02
CPC分类号： G03F7/706 , G03F7/70633 , Y10T428/24802 , Y10T428/24917
摘要： The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.
摘要翻译：本发明包括形成在第一层中的第一半导体元件形成元件，通过与第一半导体元件形成元件相同的制造步骤形成的第一测量标记，形成在第一层之上的第二层中的第二半导体元件形成元件，以及在与第二半导体元件形成部件相同的制造步骤中形成的用于测量第一和第二半导体元件形成部件之间的配准精度的第二测量标记。第一测量标记具有在照射光时受到与第一半导体元件形成部件相同的像差影响的图案，并且第二测量标记具有受光照射时受到与第二半导体元件形成部件相同的像差影响的图案。因此，可以提供考虑到像差影响的配准精度测量标记。

4. 发明授权

US08573041B2 Mass air flow measurement device 有权
标题翻译：大气流量测量装置
公开(公告)号：US08573041B2
公开(公告)日：2013-11-05
申请号：US13314591
申请日：2011-12-08
申请人： Takayuki Saito , Takayuki Yogo , Shinya Igarashi , Hiromu Kikawa
发明人： Takayuki Saito , Takayuki Yogo , Shinya Igarashi , Hiromu Kikawa
IPC分类号： G01M15/04
CPC分类号： G01F1/6842 , G01F5/00 , H01L2224/48091 , H01L2924/00014
摘要： An arrangement of a mass intake air flow measurement device suitable for integrating a humidity sensing device as well as a temperature sensing device and a pressure sensing device is provided. A second bypass passage 501 bypassing a bypass passage 205 is formed and a humidity sensing device 500 is mounted in the second bypass passage 501. A second bypass passage inlet 502 and a second bypass passage outlet 503 formed in a wall surface of the bypass passage 205 are opened parallel to the direction of flow of air flowing in the bypass passage 205.
摘要翻译：提供了一种适合于集成湿度感测装置以及温度感测装置和压力感测装置的大量进气流量测量装置的布置。形成旁通旁路通路205的第二旁路通路501，在第二旁路通路501中安装湿度检测装置500.形成在旁通路205的壁面的第二旁路通路入口502和第二旁路通路出口503 平行于在旁路通路205中流动的空气的流动方向开口。

5. 发明授权

US08549901B2 Sensor structure 有权
标题翻译：传感器结构
公开(公告)号：US08549901B2
公开(公告)日：2013-10-08
申请号：US13367939
申请日：2012-02-07
申请人： Takayuki Saito , Keiji Hanzawa , Takayuki Yogo
发明人： Takayuki Saito , Keiji Hanzawa , Takayuki Yogo
IPC分类号： G01M15/04
CPC分类号： G01F1/6842 , F02D41/187 , G01F5/00
摘要： In relation to a humidity sensor sensitive to water and contamination, a sensor implementation structure that achieves both protection performance against water and contaminants and measurement performance such as humidity responsiveness is provided. A sensor structure has a mass airflow measurement element that measures a mass airflow flowing in an intake pipe, a humidity sensing element that senses humidity of air flowing in the intake pipe, a housing structural component having a connector that carries out input/output to/from outside and a terminal component of the connector, and a bypass passage that is composed by using part of the housing structural component and takes in part of the air that flows in the intake pipe, the mass airflow measurement element being mounted in the bypass passage; wherein space is provided in the housing structural component in the vicinity of the bypass passage, the humidity sensing element is mounted in the space.
摘要翻译：关于对水和污染物敏感的湿度传感器，提供了实现对水和污染物的保护性能以及诸如湿度响应性的测量性能的传感器实施结构。传感器结构具有测量进气管中流动的质量气流的质量气流测量元件，感测进气管中流动的空气湿度的湿度感测元件，具有连接器的壳体结构部件，该连接器将输入/ 从连接器的外部和端子部件和旁通通路构成，所述旁通通路由使用所述壳体结构部件的一部分而占据所述进气管中流动的一部分空气，所述质量空气流量测量元件安装在所述旁路通路 ; 其中在所述外壳结构部件中在所述旁通通路附近设置空间，所述湿度感测元件安装在所述空间中。

6. 发明申请

US20120155101A1 LIGHT-EMITTING APPARATUS AND AUTOMOTIVE HEADLAMPS 有权
标题翻译：发光装置和汽车头灯
公开(公告)号：US20120155101A1
公开(公告)日：2012-06-21
申请号：US13394100
申请日：2010-08-25
申请人： Akihiro Matsumoto , Tetsuya Suzuki , Tomoyuki Nakagawa , Akitaka Kanamori , Takayuki Saito , Kaname Miyagishima , Hiroki Fujimura
发明人： Akihiro Matsumoto , Tetsuya Suzuki , Tomoyuki Nakagawa , Akitaka Kanamori , Takayuki Saito , Kaname Miyagishima , Hiroki Fujimura
IPC分类号： B60Q1/00 , F21V21/00
CPC分类号： F21S45/47 , B60Q1/0094 , F21S41/141 , F21S41/147 , F21S41/19 , F21S41/192 , F21V29/004 , F21V29/70 , F21V29/763 , F21Y2115/10 , H01L33/58 , H01L33/60 , H01L33/644 , H01L2224/32013 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting apparatus is provided with: a light-emitting module; a control circuit unit configured to control the lighting of the light-emitting module; a heat-radiating substrate configured to support the light-emitting module and the control circuit unit in such a manner as to recover the heat produced by the light-emitting module and the control circuit unit; and a connection support unit mounted on the heat-radiating substrate in such a state as to support an electrically conductive member by which to electrically connect the light-emitting module and the control circuit unit.
摘要翻译：发光装置具有：发光模块; 被配置为控制所述发光模块的点亮的控制电路单元; 散热基板，被配置为支撑发光模块和控制电路单元，以回收由发光模块和控制电路单元产生的热量; 以及安装在散热基板上的连接支撑单元，其状态为支撑用于电连接发光模块和控制电路单元的导电构件。

7. 发明授权

US08133380B2 Method for regenerating ion exchanger 有权
标题翻译：离子交换器再生方法
公开(公告)号：US08133380B2
公开(公告)日：2012-03-13
申请号：US12222733
申请日：2008-08-14
申请人： Takayuki Saito , Tsukuru Suzuki , Yuji Makita , Kaoru Yamada , Masayuki Kumekawa , Hozumi Yasuda , Osamu Nabeya , Kazuto Hirokawa , Mitsuhiko Shirakashi , Yasushi Toma , Itsuki Kobata
发明人： Takayuki Saito , Tsukuru Suzuki , Yuji Makita , Kaoru Yamada , Masayuki Kumekawa , Hozumi Yasuda , Osamu Nabeya , Kazuto Hirokawa , Mitsuhiko Shirakashi , Yasushi Toma , Itsuki Kobata
IPC分类号： B23H3/10
CPC分类号： C25F3/00 , B01J49/30 , C25F7/00
摘要： A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.
摘要翻译：用于再生离子交换剂的方法和装置可以容易且快速地再生离子交换器，并且可以在再生离子交换器的清洁和废液的处理时最小化负载。再生污染离子交换器的方法包括：提供一对再生电极和对置电极，设置在电极之间的隔板和设置在对电极与隔板之间的再生用离子交换器; 并在再生电极和对电极之间施加电压，同时在隔板和再生电极之间提供液体，并且还在分隔件和对电极之间供应液体。

8. 外观设计

USD644855S1 Table 有权
公开(公告)号：USD644855S1
公开(公告)日：2011-09-13
申请号：US29357684
申请日：2010-03-16
申请人： Takayuki Saito
设计人： Takayuki Saito

9. 发明申请

US20100231923A1 THREE-DIMENSIONAL SHAPE MEASURING METHOD AND DEVICE 审中-公开
标题翻译：三维形状测量方法和装置
公开(公告)号：US20100231923A1
公开(公告)日：2010-09-16
申请号：US12721084
申请日：2010-03-10
申请人： Zongtao GE , Masaaki Tomimizu , Hideo Kanda , Takayuki Saito , Noboru Koizumi , Seiji Mochitate , Shigeyuki Takano , Hiroyuki Iwazaki
发明人： Zongtao GE , Masaaki Tomimizu , Hideo Kanda , Takayuki Saito , Noboru Koizumi , Seiji Mochitate , Shigeyuki Takano , Hiroyuki Iwazaki
IPC分类号： G01B11/25
CPC分类号： G01B11/2441 , G01M11/0221 , G01M11/025 , G01M11/0271
摘要： A process of measuring a shape while changing the relative posture of an microscopic interferometer to a sample lens which is rotated about a rotation axis is divided into a process of measuring a top surface in a state where the sample lens is supported from a back surface and a process of measuring a back surface in a state where the sample lens is supported from the top surface. By combining first shape information of a flange side surface acquired by the process of measuring the top surface and second shape information of the flange side surface acquired by the process of measuring the back surface, the relative positional relation between the sample top surface and the sample back surface is calculated.
摘要翻译：在将微型干涉仪相对于相对于旋转轴线旋转的样本透镜的相对姿势变化的同时测量形状的处理被划分为从背面支撑样本透镜的状态下测量顶面的处理，在从上表面支撑样本透镜的状态下测量背面的处理。通过组合通过测量上表面获得的凸缘侧表面的第一形状信息和通过测量背面的处理获得的凸缘侧表面的第二形状信息，样本顶表面和样本之间的相对位置关系计算背面。

10. 发明申请

US20090090397A1 Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20090090397A1
公开(公告)日：2009-04-09
申请号：US12314197
申请日：2008-12-05
申请人： Takayuki Saito , Tsukuru Suzuki , Kaoru Yamada , Kenya Ito , Masayuki Kamezawa , Kenji Yamaguchi
发明人： Takayuki Saito , Tsukuru Suzuki , Kaoru Yamada , Kenya Ito , Masayuki Kamezawa , Kenji Yamaguchi
IPC分类号： B08B3/04
CPC分类号： H01L21/6708 , B08B3/02 , Y10S134/902
摘要： The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.
摘要翻译：本发明提供一种适用于腐蚀形成在基板的周边部分上的薄膜的蚀刻装置中的基板处理装置和基板处理方法。本发明还提供一种适用于在已被蚀刻的基板上进行清洗处理的清洗装置的基板处理装置和基板处理方法。用于蚀刻的基板处理装置包括基板保持器11，用于基本上水平地保持基板W并旋转基板W;以及处理液体供应单元15，用于将处理液体供应到正在旋转的基板W的周边部分处理液体相对于基板W是静止的。用于清洗基板的基板处理装置包括：基板保持件54，用于基本上水平地保持基板W并旋转基板W;以及清洗液供给部单元53具有从基板W的中心朝向基板W的周边部分取向的清洗液出口53a，其与基板W的表面的仰角不大于45°。清洗液供给单元53 以不小于0.1m / s的流速将清洗液供给到基板W的表面。

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