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1. 再颁专利

USRE37427E1 Dynamic type memory 有权
标题翻译：动态类型内存
公开(公告)号：USRE37427E1
公开(公告)日：2001-10-30
申请号：US09493001
申请日：2000-01-27
申请人： Masaki Ogihara , Satoru Takase , Kiyofumi Sakurai
发明人： Masaki Ogihara , Satoru Takase , Kiyofumi Sakurai
IPC分类号： G11C1300
CPC分类号： G11C7/1012 , G11C5/025 , G11C7/06 , G11C7/10 , G11C7/1006 , G11C11/4093 , G11C11/4096
摘要： In a dynamic type memory, a memory cell array is divided into a plurality of sub arrays on a memory chip. Each of the sub arrays is provided with a data line formed in parallel with word lines. Data buffer and multiplexer circuits and I/O pads are arranged on one side of the memory chip in parallel with bit lines. This arrangement allows a data path to be shortened and enables data to be transferred at high speed.
摘要翻译：在动态类型存储器中，存储器单元阵列被划分成存储器芯片上的多个子阵列。每个子阵列设置有与字线并行形成的数据线。数据缓冲器和多路复用器电路和I / O焊盘与位线并行布置在存储器芯片的一侧。这种布置允许数据路径被缩短并且能够高速传送数据。

2. 发明授权

US5642326A Dynamic memory 失效
标题翻译：动态内存
公开(公告)号：US5642326A
公开(公告)日：1997-06-24
申请号：US534558
申请日：1995-09-27
申请人： Kiyofumi Sakurai , Satoru Takase , Masaki Ogihara
发明人： Kiyofumi Sakurai , Satoru Takase , Masaki Ogihara
IPC分类号： G11C11/407 , G11C7/22 , G11C8/18 , G11C11/4076 , G11C11/409 , G11C7/00
CPC分类号： G11C11/4076 , G11C7/22 , G11C8/18
摘要： A dynamic memory comprises a control circuit for controlling the selection of the row decoder and the activation of the sense amplifiers in accordance with a RAS signal externally supplied thereto and a word line control circuit for controlling a selected word line to turn the electric potentials read out from the memory cells connected to the word line on the bit lines connected to the respective memory cells back to an inactive level after the electric potentials are sensed and amplified by the sense amplifiers corresponding to the respective bit lines during the time period from the time when the RAS signal is turned to an active level and the time when it is turned back to the inactive level. A dynamic memory has gate oxide films are designed to be subjected to a less electric field strength in order to minimize the degradation of reliability and the memory can effectively reduce the fall of the word line driving stepped-up voltage to eliminate the necessity of a leak current compensation circuit. Additionally, the memory reduces the time required to restore the electric potentials for a data reading operation and also the cycle time required for a data writing operation.
摘要翻译：动态存储器包括控制电路，用于根据外部提供给它的+ E，ovs RAS + EE信号和用于控制选定字线的字线控制电路来控制行解码器的选择和感测放大器的激活将连接到各个存储器单元的位线上连接到字线的存储单元读出的电位在由该位线对应的读出放大器在从+ E，ovs RAS + EE信号变为有效电平的时间段和其回到无效电平的时间。具有栅极氧化膜的动态存储器被设计为经受较少的电场强度以便最小化可靠性的劣化，并且存储器可以有效地减少字线驱动升压电压的下降以消除泄漏的必要性电流补偿电路。此外，存储器减少了恢复数据读取操作的电位所需的时间以及数据写入操作所需的周期时间。

3. 发明授权

US5586078A Dynamic type memory 失效
标题翻译：动态类型内存
公开(公告)号：US5586078A
公开(公告)日：1996-12-17
申请号：US528306
申请日：1995-09-14
申请人： Satoru Takase , Kiyofumi Sakurai , Masaki Ogihara
发明人： Satoru Takase , Kiyofumi Sakurai , Masaki Ogihara
IPC分类号： G11C11/401 , G06F12/08 , G11C11/409 , G11C11/4091 , G11C11/4096 , H01L21/8242 , H01L27/108 , G11C8/00
CPC分类号： G06F12/0893 , G11C11/4091 , G11C11/4096
摘要： A DRAM includes memory blocks in a form of division of shared sense amplifier configuration in which sub arrays and sense amplifiers serving as cache memories are alternately arranged in the X direction of a memory chip. The memory blocks are arranged in the Y direction. Data lines are formed in parallel with the Y direction for the corresponding sub arrays, for transferring data held in the sense amplifiers corresponding to the sub arrays. I/O pads are arranged in parallel with the X direction, for inputting/outputting data to/from the corresponding sub arrays via the data lines. When the shared sense amplifier configuration and sense amplifier cache system are achieved in a small area of the DRAM, the hit rate of the cache memories is increased, and data can be transferred at high speed by shortening data paths formed in the memory chip.
摘要翻译： DRAM包括以共享读出放大器配置划分的形式的存储器块，其中用作高速缓冲存储器的子阵列和读出放大器在存储器芯片的X方向上交替排列。存储块沿Y方向排列。数据线与对应的子阵列的Y方向平行地形成，用于传送保持在与子阵列相对应的读出放大器中的数据。 I / O焊盘与X方向平行布置，用于经由数据线向/从相应的子阵列输入/输出数据。当在DRAM的小区域中实现共享读出放大器配置和读出放大器缓存系统时，高速缓冲存储器的命中率增加，并且可以通过缩短存储芯片中形成的数据路径来高速传输数据。

4. 发明授权

US5712827A Dynamic type memory 失效
标题翻译：动态类型内存
公开(公告)号：US5712827A
公开(公告)日：1998-01-27
申请号：US530725
申请日：1995-09-19
申请人： Masaki Ogihara , Satoru Takase , Kiyofumi Sakurai
发明人： Masaki Ogihara , Satoru Takase , Kiyofumi Sakurai
IPC分类号： G11C11/401 , G11C5/02 , G11C7/06 , G11C7/10 , G11C11/409 , G11C11/4093 , G11C11/4096 , G11C13/00 , G11C11/34
CPC分类号： G11C7/1012 , G11C11/4093 , G11C11/4096 , G11C5/025 , G11C7/06 , G11C7/10 , G11C7/1006
摘要： In a dynamic type memory, a memory cell array is divided into a plurality of sub arrays on a memory chip. Each of the sub arrays is provided with a data line formed in parallel with word lines. Data buffer and multiplexer circuits and I/O pads are arranged on one side of the memory chip in parallel with bit lines. This arrangement allows a data path to be shortened and enables data to be transferred at high speed.
摘要翻译：在动态类型存储器中，存储器单元阵列被划分成存储器芯片上的多个子阵列。每个子阵列设置有与字线并行形成的数据线。数据缓冲器和多路复用器电路和I / O焊盘与位线并行布置在存储器芯片的一侧。这种布置允许数据路径被缩短并且能够高速传送数据。

5. 发明授权

US5410512A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5410512A
公开(公告)日：1995-04-25
申请号：US64438
申请日：1993-05-21
申请人： Satoru Takase , Tohru Furuyama , Donald C. Stark , Natsuki Kushiyama , Kiyofumi Sakurai , Hiroyuki Noji , Shigeo Ohshima
发明人： Satoru Takase , Tohru Furuyama , Donald C. Stark , Natsuki Kushiyama , Kiyofumi Sakurai , Hiroyuki Noji , Shigeo Ohshima
IPC分类号： G11C11/401 , G06F12/02 , G11C7/00 , G11C7/10 , G11C11/407 , G11C11/41
CPC分类号： G11C7/1021
摘要： A semiconductor memory device includes a silicon chip and sub-arrays formed in the chip. In each of the sub-arrays, memory cells arranged in a matrix form, word lines provided for respective rows of each of the sub-arrays, and bit lines provided for respective columns of each of the sub-arrays are arranged. Further, in the chip, amplifier groups for amplifying data read out from the memory cells are arranged for the respective sub-arrays. Amplifiers connected to respective bit lines are provided in the amplifier groups and the amplifiers each have a function of continuously holding data read out from the memory cell.
摘要翻译：半导体存储器件包括形成在芯片中的硅芯片和子阵列。在每个子阵列中，布置成矩阵形式的存储器单元，为每个子阵列的各行提供的字线，以及为每个子阵列的各列提供的位线。此外，在芯片中，放置用于放大从存储单元读出的数据的放大器组用于各个子阵列。连接到相应位线的放大器设置在放大器组中，并且放大器各自具有连续保持从存储单元读出的数据的功能。

6. 发明授权

US07650584B2 Application specific semiconductor integrated circuit and its manufacturing method thereof 失效
标题翻译：专用半导体集成电路及其制造方法
公开(公告)号：US07650584B2
公开(公告)日：2010-01-19
申请号：US11838605
申请日：2007-08-14
申请人： Hitoshi Shiga , Kiyofumi Sakurai , Kenji Mima
发明人： Hitoshi Shiga , Kiyofumi Sakurai , Kenji Mima
IPC分类号： G06F17/50 , G06F9/45
CPC分类号： G06F17/5077 , G11C5/025 , H01L27/0207 , H01L27/11898
摘要： An ASIC includes a first-wire extended in a first-direction and a second-wire extended in a parallel direction to the first-wire and both are placed on a first-wire layer; and a third-wire placed on a second-wire layer above the first-wire layer and is extended above the wire and above the second-wire in a second-direction which intersects the first-direction and passing through a first via-hole is connected to the first-wire, and a fourth-wire separated from the third-wire extended in a parallel direction above the first-wire and above the second-wire and a fifth-wire separated from both the third-wire and the fourth-wire and extended in a parallel direction in a smallest space and passing through a second via-hole is connected to the second-wire, wherein, one end of the fifth-wire is extended to the center between the second-wire and the first-wire from above the second-wire.
摘要翻译： ASIC包括沿第一方向延伸的第一线和与第一线并联延伸的第二线，并且两者均放置在第一线层上; 以及放置在所述第一线层上方的二线层上并且在所述线的上方延伸并且在与所述第一方向相交并穿过第一通孔的第二方向上方的所述第二线上的第三线是连接到第一线，以及与第三线分离的第四线，该第三线在第一线上方平行并且在第二线上方延伸，以及与第三线和第四线分离的第五线，并且在最小的空间中沿平行方向延伸并穿过第二通孔的第二线连接到第二线，其中，第五线的一端延伸到第二线和第一线之间的中心，电线从二线以上。

7. 发明授权

US08233325B2 NAND flash memory 有权
标题翻译： NAND闪存
公开(公告)号：US08233325B2
公开(公告)日：2012-07-31
申请号：US13108641
申请日：2011-05-16
申请人： Kiyofumi Sakurai , Takuya Futatsuyama
发明人： Kiyofumi Sakurai , Takuya Futatsuyama
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/08 , G11C8/08 , G11C16/0483
摘要： A method of controlling a programming of a flash memory with memory blocks. The method includes checking whether a selected block among the memory blocks belongs to a first group or a second group. The method further includes executing the programming from a least bit address when the selected block belongs to the first group. The method also includes executing the programming from a most bit address when the selected block belongs to the second group.
摘要翻译：一种利用存储块控制闪速存储器编程的方法。该方法包括检查存储器块中的所选块是否属于第一组或第二组。该方法还包括当所选择的块属于第一组时从最小位地址执行编程。该方法还包括当所选择的块属于第二组时从大多数位地址执行编程。

8. 发明授权

US5066997A Semiconductor device 失效
公开(公告)号：US5066997A
公开(公告)日：1991-11-19
申请号：US436646
申请日：1989-11-15
申请人： Kiyofumi Sakurai , Syuso Fujii , Mitsuru Shimizu
发明人： Kiyofumi Sakurai , Syuso Fujii , Mitsuru Shimizu
IPC分类号： H01L21/3205 , G11C5/06 , G11C11/401 , H01L21/822 , H01L23/52 , H01L23/528 , H01L27/04 , H01L27/10 , H01L27/108
CPC分类号： H01L23/5283 , G11C5/063 , H01L27/108 , H01L2924/0002
摘要： A semiconductor device comprises a semiconductor chip and a memory array constituted by a plurality of memory blocks formed in the semiconductor chip and each having the essentially same construction and a plurality of bit lines arranged in columns at a predetermined interval. The semiconductor device further comprises a dummy wiring pattern arranged ajacent to the memory array in the semiconductor chip and including a dummy wiring layer set apart from outermost bit lines of each memory block a distance equal to the predetermined interval.

9. 发明申请

US20080074929A1 APPLICATION SPECIFIC SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD THEREOF 失效
标题翻译：应用特殊半导体集成电路及其制造方法
公开(公告)号：US20080074929A1
公开(公告)日：2008-03-27
申请号：US11838605
申请日：2007-08-14
申请人： Hitoshi SHIGA , Kiyofumi Sakurai , Kenji Mima
发明人： Hitoshi SHIGA , Kiyofumi Sakurai , Kenji Mima
IPC分类号： G11C11/34 , G06F17/50 , H01L23/52
CPC分类号： G06F17/5077 , G11C5/025 , H01L27/0207 , H01L27/11898
摘要： An ASIC includes a first-wire extended in a first-direction and a second-wire extended in a parallel direction to the first-wire and both are placed on a first-wire layer; and a third-wire placed on a second-wire layer above the first-wire layer and is extended above the wire and above the second-wire in a second-direction which intersects the first-direction and passing through a first via-hole is connected to the first-wire, and a fourth-wire separated from the third-wire extended in a parallel direction above the first-wire and above the second-wire and a fifth-wire separated from both the third-wire and the fourth-wire and extended in a parallel direction in a smallest space and passing through a second via-hole is connected to the second-wire, wherein, one end of the fifth-wire is extended to the center between the second-wire and the first-wire from above the second-wire.
摘要翻译： ASIC包括沿第一方向延伸的第一线和与第一线并联延伸的第二线，并且两者均放置在第一线层上; 以及放置在所述第一线层上方的二线层上并且在所述线的上方延伸并且在与所述第一方向相交并穿过第一通孔的第二方向上方的所述第二线上的第三线是连接到第一线，以及与第三线分离的第四线，该第三线在第一线上方平行并且在第二线上方延伸，以及与第三线和第四线分离的第五线，并且在最小的空间中沿平行方向延伸并穿过第二通孔的第二线连接到第二线，其中，第五线的一端延伸到第二线和第一线之间的中心，电线从二线以上。

10. 发明授权

US5072271A Protection circuit for use in semiconductor integrated circuit device 失效
标题翻译：用于半导体集成电路设备的保护电路
公开(公告)号：US5072271A
公开(公告)日：1991-12-10
申请号：US563120
申请日：1990-08-06
申请人： Mitsuru Shimizu , Yoshio Okada , Kiyofumi Sakurai
发明人： Mitsuru Shimizu , Yoshio Okada , Kiyofumi Sakurai
IPC分类号： H01L29/78 , H01L27/02 , H01L27/06 , H02H9/02
CPC分类号： H01L27/0259
摘要： A protection circuit is inserted between a signal input pad and an internal circuit. The protection circuit includes a parasitic bipolar transistor which is obtained by forming high-impurity concentration semiconductor regions in the major-surface region of a substrate. In practice, it is hard to provide a parasitic bipolar transistor of a sufficiently large size, since the reduction of the size of a chip is a recent trend. With this in mind, a third semiconductor region serving as an electron-trapping region is formed in a region outside of the location where the parasitic bipolar transistor is formed. If an excessive voltage produced by ESD or the like is applied to the pad, and the excessive voltage uncontrollable by the parasitic bipolar transistor, the third semiconductor region absorbs the excessive voltage. In particular, where the current capacity of the parasitic bipolar transistor is small, the third semiconductor region reliably prevents electrostatic destruction of a circuit element. Accordingly, the protection circuit enables the parasitic bipolar transistor to be reduced in size, thus contributing to miniaturization of a chip. Moreover, the protection circuit is reliable in operation.

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