专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06454898B1 Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners 失效
标题翻译：电感耦合RF等离子体反应器，具有架空螺线管天线和模块化限制磁铁衬垫
公开(公告)号：US06454898B1
公开(公告)日：2002-09-24
申请号：US09482261
申请日：2000-01-11
申请人： Kenneth Collins , Michael Rice , Douglas Buchberger , Craig Roderick , Eric Askarinam , Gerhard Schneider , John Trow , Joshua Tsui , Dennis Grimard , Gerald Yin , Robert Wu
发明人： Kenneth Collins , Michael Rice , Douglas Buchberger , Craig Roderick , Eric Askarinam , Gerhard Schneider , John Trow , Joshua Tsui , Dennis Grimard , Gerald Yin , Robert Wu
IPC分类号： C23C1434
CPC分类号： H01J37/32522 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature. If the reactor includes a pumping annulus adjacent of a periphery of the chamber, then the passageway can be one which communicates between the chamber and the pumping annulus. Also, the passageway can be a wafer slit valve or a gas feed inlet. Such a gas feed inlet can be a center gas feed through a ceiling of the chamber. The module housing can rest upon the chamber side wall and the chamber ceiling can rest upon the module housing.
摘要翻译：根据本发明的第一方面，具有用于容纳等离子体的腔室和与腔室连通的通路的等离子体反应器通过与通道相邻放置的第一可移除等离子体约束磁体模块而增强，该模块包括第一模块壳体和第一等离子体限制磁体在壳体内。其还可以包括邻近通道设置的第二可移除等离子体限制磁体模块，包括第二模块壳体和第二等离子体限制磁体。优选地，第一和第二模块位于通道的相对侧上。此外，第一和第二等离子体限制磁体具有倾向于抵抗等离子体输送或通过通道的泄漏的磁性取向。优选地，模块壳体包括诸如铝的相对非磁性的热导体，并且与所述室主体热接触。冷却装置可以热耦合到室主体，从而将第一等离子体限制磁体保持在其居里温度以下。如果反应器包括邻近室的周边的泵送环，则通道可以是在室和泵送环之间连通的通道。此外，通道可以是晶片狭缝阀或气体进料口。这种气体进料口可以是通过室的天花板的中心气体进料。模块壳体可以搁置在腔室侧壁上，并且室顶板可以靠在模块壳体上。

2. 发明授权

US6074512A Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners 失效
标题翻译：具有架空螺线管天线和模块化限制磁铁衬垫的感应耦合射频等离子体反应器
公开(公告)号：US6074512A
公开(公告)日：2000-06-13
申请号：US893393
申请日：1997-07-15
申请人： Kenneth Collins , Michael Rice , Douglas Buchberger , Craig Roderick , Eric Askarinam , Gerhard Schneider , John Trow , Joshua Tsui , Dennis Grimard , Gerald Yin , Robert Wu
发明人： Kenneth Collins , Michael Rice , Douglas Buchberger , Craig Roderick , Eric Askarinam , Gerhard Schneider , John Trow , Joshua Tsui , Dennis Grimard , Gerald Yin , Robert Wu
IPC分类号： H05H1/46 , C23C16/517 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/683 , C23C14/34 , C23C16/00 , C23F1/02
CPC分类号： H01J37/32522 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346
摘要： In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body. Cooling apparatus can be thermally coupled to the chamber body, whereby to maintain the first plasma confinement magnet below its Curie temperature. If the reactor includes a pumping annulus adjacent of a periphery of the chamber, then the passageway can be one which communicates between the chamber and the pumping annulus. Also, the passageway can be a wafer slit valve or a gas feed inlet. Such a gas feed inlet can be a center gas feed through a ceiling of the chamber. The module housing can rest upon the chamber side wall and the chamber ceiling can rest upon the module housing.
摘要翻译：根据本发明的第一方面，具有用于容纳等离子体的腔室和与腔室连通的通路的等离子体反应器通过与通道相邻放置的第一可移除等离子体约束磁体模块而增强，该模块包括第一模块壳体和第一等离子体限制磁体在壳体内。其还可以包括邻近通道设置的第二可移除等离子体限制磁体模块，包括第二模块壳体和第二等离子体限制磁体。优选地，第一和第二模块位于通道的相对侧上。此外，第一和第二等离子体限制磁体具有倾向于抵抗等离子体输送或通过通道的泄漏的磁性取向。优选地，模块壳体包括诸如铝的相对非磁性的热导体，并且与所述室主体热接触。冷却装置可以热耦合到室主体，从而将第一等离子体限制磁体保持在其居里温度以下。如果反应器包括邻近室的周边的泵送环，则通道可以是在室和泵送环之间连通的通道。此外，通道可以是晶片狭缝阀或气体进料口。这种气体进料口可以是通过室的天花板的中心气体进料。模块壳体可以搁置在腔室侧壁上，并且室顶板可以靠在模块壳体上。

3. 发明授权

US06524432B1 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：具有感应天线的平行板电极等离子体反应器和等离子体离子密度的可调径向分布
公开(公告)号：US06524432B1
公开(公告)日：2003-02-25
申请号：US09539814
申请日：2000-03-30
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

4. 发明授权

US6054013A Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：平行板电极等离子体反应器具有感应天线和等离子体离子密度的径向分布
公开(公告)号：US6054013A
公开(公告)日：2000-04-25
申请号：US740124
申请日：1996-10-24
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/683 , H05H1/00
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

5. 发明授权

US06063233A Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna 失效
公开(公告)号：US06063233A
公开(公告)日：2000-05-16
申请号：US733555
申请日：1996-10-21
申请人： Kenneth Collins , Michael Rice , Eric Askarinam , Douglas Buchberger , Craig Roderick
发明人： Kenneth Collins , Michael Rice , Eric Askarinam , Douglas Buchberger , Craig Roderick
IPC分类号： H05H1/46 , C23C16/517 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/683 , C23F1/02 , C23C16/00
CPC分类号： H01J37/32458 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346
摘要： The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material. The reactor can include a gas manifold in the cold body communicable with a source of the thermally conductive gas an inlet through the cold body from the gas manifold and opening out to the cold body interface. The reactor can further include an O-ring apparatus sandwiched between the cold body and the thermal conductor and defining a gas-containing volume in the cold body interface of nearly infinitesimal thickness in communication with the inlet from the cold body. More generally, the reactor can include the facilitation of thermal transfer across an interface between a hot and/or cold sink and any part exposed to the reactor chamber interior atmosphere, such as the ceiling, wall or polymer-hardening precursor ring, for example, by the insertion into that interface of a thermally conductive gas or substance.

6. 发明授权

US06514376B1 Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna 失效
标题翻译：具有架空螺线管天线的电感耦合射频等离子体反应器的热控制装置
公开(公告)号：US06514376B1
公开(公告)日：2003-02-04
申请号：US09520623
申请日：2000-03-07
申请人： Kenneth Collins , Michael Rice , Eric Askarinam , Douglas Buchberger , Craig Roderick
发明人： Kenneth Collins , Michael Rice , Eric Askarinam , Douglas Buchberger , Craig Roderick
IPC分类号： C23C1600
CPC分类号： C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in a plasma reactor including a plasma reactor chamber and a workpiece support for holding a workpiece near a support plane inside the chamber during processing, the chamber having a reactor enclosure portion facing the support, a cold body overlying the reactor enclosure portion, a plasma source power applicator between the reactor enclosure portion and the cold body and a thermally conductor between and in contact with the cold body and the reactor enclosure. The thermal conductor and the cold sink define a cold sink interface therebetween, the reactor preferably further including a thermally conductive substance within the cold sink interface for reducing the thermal resistance across the cold sink interface. The thermally conductive substance can be a thermally conductive gas filling the cold body interface. Alternatively, the thermally conductive substance can be a thermally conductive solid material. The reactor can include a gas manifold in the cold body communicable with a source of the thermally conductive gas an inlet through the cold body from the gas manifold and opening out to the cold body interface. The reactor can further include an O-ring apparatus sandwiched between the cold body and the thermal conductor and defining a gas-containing volume in the cold body interface of nearly infinitesimal thickness in communication with the inlet from the cold body. More generally, the reactor can include the facilitation of thermal transfer across an interface between a hot and/or cold sink and any part exposed to the reactor chamber interior atmosphere, such as the ceiling, wall or polymer-hardening precursor ring, for example, by the insertion into that interface of a thermally conductive gas or substance.
摘要翻译：本发明体现在等离子体反应器中，该等离子体反应器包括等离子体反应器室和工件支撑件，用于在加工期间将工件保持在室内的支撑平面附近，该室具有面向支撑件的反应器外壳部分，覆盖反应器外壳部分的冷体，反应器外壳部分和冷体之间的等离子体源功率施加器和在冷体和反应器外壳之间并与其接触的导热体。热导体和冷却槽在它们之间限定冷沉接口，反应器优选地还包括在冷沉接口内的导热物质，以降低冷接口接口上的热阻。导热物质可以是填充冷体界面的导热气体。或者，导热物质可以是导热固体材料。反应器可以包括在冷体中的气体歧管，其与导热气体源连通，通过来自气体歧管的冷体和通向冷体界面的入口。反应器还可以包括夹在冷体和热导体之间的O形环装置，并且在与冷体的入口连通的几乎无穷小的厚度的冷体界面中限定含气体体积。更一般地，反应器可以包括促进热和/或冷沉之间的界面和暴露于反应室内部大气的任何部分（例如天花板，壁或聚合物硬化前体环）之间的热传递，例如，通过插入该导热气体或物质的界面。

7. 发明授权

US5990017A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US5990017A
公开(公告)日：1999-11-23
申请号：US104550
申请日：1998-06-25
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

8. 发明授权

US6024826A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6024826A
公开(公告)日：2000-02-15
申请号：US734797
申请日：1996-10-23
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , C23F1/02 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

9. 发明授权

US06252354B1 RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control 失效
标题翻译：使用频率伺服和功率，电压，电流或DI / DT控制的RF等离子体反应器的RF调谐方法
公开(公告)号：US06252354B1
公开(公告)日：2001-06-26
申请号：US08743059
申请日：1996-11-04
申请人： Kenneth Collins , Craig Roderick , Douglas Buchberger , John Trow , Viktor Shel
发明人： Kenneth Collins , Craig Roderick , Douglas Buchberger , John Trow , Viktor Shel
IPC分类号： H05H146
CPC分类号： H03H7/40 , H01J37/321 , H01J37/32174 , H01J37/3299
摘要： In an RF plasma reactor including a reactor chamber with a process gas inlet, a workpiece support, an RF signal applicator facing a portion of the interior of the chamber and an RF signal generator having a controllable RF frequency and an RF signal output coupled to an input of the RF signal applicator, the invention tunes the RF signal generator to the plasma-loaded RF signal applicator by sensing an RF parameter at the RF signal generator or at the RF signal applicator and then adjusting the frequency of the RF signal generator so as to optimize the parameter. The invention further controls the RF signal generator output magnitude (power, current or voltage) by optimizing the value of the same RF parameter or another RF parameter. The reactor preferably includes a fixed tuning circuit between the RF signal generator and the RF signal applicator.
摘要翻译：在包括具有工艺气体入口的反应器室的RF等离子体反应器中，工件支撑件，面向腔室内部的一部分的RF信号施加器以及RF信号发生器，RF信号发生器具有耦合到 RF信号施加器的输入，本发明通过感测RF信号发生器或RF信号施加器处的RF参数，然后调整RF信号发生器的频率，将RF信号发生器调谐到等离子体负载的RF信号施加器，以便以优化参数。本发明还通过优化相同RF参数或另一个RF参数的值来进一步控制RF信号发生器的输出幅度（功率，电流或电压）。反应器优选地包括在RF信号发生器和RF信号施加器之间的固定调谐电路。

10. 发明授权

US06238588B1 High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process 失效
标题翻译：高压高反应性稀释气体含量高等离子体离子密度等离子体氧化物蚀刻工艺
公开(公告)号：US06238588B1
公开(公告)日：2001-05-29
申请号：US08733554
申请日：1996-10-21
申请人： Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
发明人： Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
IPC分类号： B44C122
CPC分类号： H01L21/02063 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1/10)} of the gap between the inductive antenna and the workpiece.
摘要翻译：本发明体现在一种在等离子体反应器室中处理半导体工件的方法，包括以足以自动维持气体压力的第一流量将至少含有碳和氟的聚合物和蚀刻剂前体气体供应到室中在低于大约20mT的低压范围内，将第二流量的第二流量的相对非反应性气体供应到室内的总气体流速的约一半以上，并与第一流量将气体压力保持在高于20mT的高压范围内，并将等离子体源功率施加到腔室中以形成离子密度超过每立方厘米1010离子的高离子密度等离子体。在本发明的一个应用中，工件包括通过该方法蚀刻的含氧覆层和不受蚀刻保护的非含氧底层，前体气体在等离子体中解离成含氟蚀刻剂，其蚀刻含氧层和积聚在非含氧底层上的含碳聚合物种类。或者，高压范围可以被定义为感应场的趋肤深度超过感应天线和工件之间的间隙的{分数（1/10）}的压力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式