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1. 发明授权

US06238588B1 High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process 失效
标题翻译：高压高反应性稀释气体含量高等离子体离子密度等离子体氧化物蚀刻工艺
公开(公告)号：US06238588B1
公开(公告)日：2001-05-29
申请号：US08733554
申请日：1996-10-21
申请人： Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
发明人： Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
IPC分类号： B44C122
CPC分类号： H01L21/02063 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1/10)} of the gap between the inductive antenna and the workpiece.
摘要翻译：本发明体现在一种在等离子体反应器室中处理半导体工件的方法，包括以足以自动维持气体压力的第一流量将至少含有碳和氟的聚合物和蚀刻剂前体气体供应到室中在低于大约20mT的低压范围内，将第二流量的第二流量的相对非反应性气体供应到室内的总气体流速的约一半以上，并与第一流量将气体压力保持在高于20mT的高压范围内，并将等离子体源功率施加到腔室中以形成离子密度超过每立方厘米1010离子的高离子密度等离子体。在本发明的一个应用中，工件包括通过该方法蚀刻的含氧覆层和不受蚀刻保护的非含氧底层，前体气体在等离子体中解离成含氟蚀刻剂，其蚀刻含氧层和积聚在非含氧底层上的含碳聚合物种类。或者，高压范围可以被定义为感应场的趋肤深度超过感应天线和工件之间的间隙的{分数（1/10）}的压力。

2. 发明授权

US5990017A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US5990017A
公开(公告)日：1999-11-23
申请号：US104550
申请日：1998-06-25
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

3. 发明授权

US6024826A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6024826A
公开(公告)日：2000-02-15
申请号：US734797
申请日：1996-10-23
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , C23F1/02 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

4. 发明授权

US06524432B1 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：具有感应天线的平行板电极等离子体反应器和等离子体离子密度的可调径向分布
公开(公告)号：US06524432B1
公开(公告)日：2003-02-25
申请号：US09539814
申请日：2000-03-30
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

5. 发明授权

US6054013A Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：平行板电极等离子体反应器具有感应天线和等离子体离子密度的径向分布
公开(公告)号：US6054013A
公开(公告)日：2000-04-25
申请号：US740124
申请日：1996-10-24
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/683 , H05H1/00
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

6. 发明授权

US06194325B1 Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography 失效
标题翻译：氧化物蚀刻工艺，对氮化物具有高选择性，适用于不均匀地形的表面
公开(公告)号：US06194325B1
公开(公告)日：2001-02-27
申请号：US08552030
申请日：1995-12-04
申请人： Chan Lon Yang , Jeffrey Marks , Nicolas Bright , Kenneth S. Collins , David Groechel , Peter Keswick
发明人： Chan Lon Yang , Jeffrey Marks , Nicolas Bright , Kenneth S. Collins , David Groechel , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , H01J37/321 , H01L21/31116
摘要： A plasma etch process is described for the etching of oxide with a high selectivity to nitride, including nitride formed on uneven surfaces of a substrate, e.g., on sidewalls of steps on an integrated circuit structure. The addition of one or more hydrogen-containing gases, preferably one or more hydrofluorocarbon gases, to one or more fluorine-substituted hydrocarbon etch gases and a scavenger for fluorine, in a plasma etch process for etching oxide in preference to nitride, results in a high selectivity to nitride which is preserved regardless of the topography of the nitride portions of the substrate surface. In a preferred embodiment, one or more oxygen-bearing gases are also added to reduce the overall rate of polymer deposition on the chamber surfaces and on the surfaces to be etched, which can otherwise reduce the etch rate and cause excessive polymer deposition on the chamber surfaces. The fluorine scavenger is preferably an electrically grounded silicon electrode associated with the plasma.
摘要翻译：描述了用于蚀刻具有对氮化物的高选择性的氧化物的等离子体蚀刻工艺，包括在衬底的不平坦表面上形成的氮化物，例如在集成电路结构上的台阶侧壁上。在优先于氮化物蚀刻氧化物的等离子体蚀刻工艺中，向一种或多种氟取代烃蚀刻气体和氟清除剂中加入一种或多种含氢气体，优选一种或多种氢氟烃气体，导致对氮化物的高选择性，与衬底表面的氮化物部分的形貌无关地被保留。在一个优选的实施方案中，还加入一种或多种含氧气体以降低腔室表面和待蚀刻表面上的聚合物沉积的总体速率，否则可降低蚀刻速率并导致室上过量的聚合物沉积表面。氟清除剂优选为与等离子体相关联的电接地硅电极。

7. 发明授权

US07048607B1 System and method for chemical mechanical planarization 失效
标题翻译：化学机械平面化的系统和方法
公开(公告)号：US07048607B1
公开(公告)日：2006-05-23
申请号：US09583512
申请日：2000-05-31
申请人： Li Wu , Sourabh Mishra , Young J. Paik , Satyasrayan Kumaraswamy , Robert Lum , Chiu Chan , David Groechel
发明人： Li Wu , Sourabh Mishra , Young J. Paik , Satyasrayan Kumaraswamy , Robert Lum , Chiu Chan , David Groechel
IPC分类号： B24B7/22 , B24B49/00
CPC分类号： B24B37/042 , B24B37/105
摘要： Generally, a method and apparatus for processing a substrate. In one embodiment, the method provides a first relative motion between at least a first substrate and a polishing material. A second relative motion is provided between at least a second substrate and the polishing material. The changing in direction of the relative motion extends the interval between conditioning procedures used to return the polishing material to a state that produces uniform polishing results.
摘要翻译：通常，用于处理衬底的方法和装置。在一个实施例中，该方法提供至少第一基底和抛光材料之间的第一相对运动。在至少第二基板和抛光材料之间提供第二相对运动。相对运动方向的变化使用于将抛光材料返回到产生均匀抛光结果的状态的调节程序之间的间隔延长。

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