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1. 发明授权

US11434567B2 Substrate processing system with tandem source activation for CVD 有权
公开(公告)号：US11434567B2
公开(公告)日：2022-09-06
申请号：US16806560
申请日：2020-03-02
申请人： LAM RESEARCH CORPORATION
发明人： Adrien LaVoie , Hu Kang , Karl Frederick Leeser
IPC分类号： C23C16/455 , C23C16/40 , C23C16/507 , C23C16/509 , C23C16/517
摘要： A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.

2. 发明申请

US20220235460A1 METHODS AND SYSTEMS FOR DEPOSITING A LAYER 有权
公开(公告)号：US20220235460A1
公开(公告)日：2022-07-28
申请号：US17580832
申请日：2022-01-21
申请人： ASM IP Holding B.V.
发明人： Marko Tuominen , Viljami Pore
IPC分类号： C23C16/458 , C23C16/509 , C23C16/517 , C23C16/455 , C23C16/52 , C23C16/56
摘要： Systems for depositing materials and related methods are described. The systems allow condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

3. 发明申请

US20220216037A1 HIGH SELECTIVITY, LOW STRESS, AND LOW HYDROGEN DIAMOND-LIKE CARBON HARDMASKS BY HIGH POWER PULSED LOW FREQUENCY RF 有权
公开(公告)号：US20220216037A1
公开(公告)日：2022-07-07
申请号：US17595505
申请日：2020-05-28
申请人： Lam Research Corporation
发明人： Matthew Scott Weimer , Pramod Subramonium , Ragesh Puthenkovilakam , Rujun Bai , David French
IPC分类号： H01J37/32 , H01L21/027 , C23C16/517 , C23C16/52 , H01L21/311 , H01L21/3213
摘要： Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.

4. 发明授权

US11114306B2 Methods for depositing dielectric material 有权
公开(公告)号：US11114306B2
公开(公告)日：2021-09-07
申请号：US16132837
申请日：2018-09-17
申请人： Applied Materials, Inc.
发明人： Bhargav Citla , Jethro Tannos , Jingyi Li , Douglas A. Buchberger, Jr. , Zhong Qiang Hua , Srinivas D. Nemani , Ellie Y. Yieh
IPC分类号： C23C16/505 , H01L21/311 , H01L21/762 , H01J37/32 , H01L21/3065 , H01L21/67 , C23C16/515 , H01L21/02 , C23C16/509 , C23C16/517
摘要： Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

5. 发明授权

US11056345B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US11056345B2
公开(公告)日：2021-07-06
申请号：US15847681
申请日：2017-12-19
申请人： ASM IP Holding B.V.
发明人： Atsuki Fukazawa
IPC分类号： H01L21/285 , C23C16/455 , C23C16/34 , C23C16/517 , C23C16/06
摘要： Examples of a method for manufacturing a semiconductor device include forming an initial film having a film thickness of 1 to 3 nm made of a metal or a metal nitride by applying plasma film formation with plasma power of 0.07 to 0.30 W/cm2 and an RF pulse width within a range of 0.1 to 1 sec, and forming, after forming the initial film, a bulk film made of a metal or metal nitride on the initial film by applying plasma film formation with plasma power higher than the plasma power when the initial film is formed.

6. 发明申请

US20170327947A1 TANDEM SOURCE ACTIVATION FOR CVD OF FILMS 审中-公开
公开(公告)号：US20170327947A1
公开(公告)日：2017-11-16
申请号：US15667980
申请日：2017-08-03
申请人： LAM RESEARCH CORPORATION
发明人： Adrien LaVoie , Hu Kang , Karl Leeser
IPC分类号： C23C16/455 , C23C16/509 , C23C16/507 , C23C16/517 , C23C16/40
CPC分类号： C23C16/4554 , C23C16/401 , C23C16/455 , C23C16/45536 , C23C16/45538 , C23C16/45542 , C23C16/507 , C23C16/509 , C23C16/517
摘要： A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate, supplying a first power level sufficient to promote rearrangement of molecules on a surface of the substrate, waiting a first predetermined period, and, after the first predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying a second power level for a second predetermined period. The second power level is greater than the first power level. The method further includes removing reactants from the process chamber.

7. 发明申请

US20170073836A1 DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS 审中-公开
标题翻译：金刚石生产方法和直流等离子体增强CVD装置
公开(公告)号：US20170073836A1
公开(公告)日：2017-03-16
申请号：US15360361
申请日：2016-11-23
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Hitoshi NOGUCHI
IPC分类号： C30B25/16 , C23C16/515 , C23C16/517 , H01J37/32 , C30B25/14 , C30B25/12 , C30B29/04 , C23C16/27 , C30B25/10
CPC分类号： C30B25/16 , C23C16/27 , C23C16/272 , C23C16/515 , C23C16/517 , C30B25/105 , C30B25/12 , C30B25/14 , C30B25/183 , C30B29/04 , H01J37/32027 , H01J37/32926 , H01J2237/327 , H01J2237/3321
摘要： Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.
摘要翻译：通过在用于保持基板（S）的载台电极（12）和用于保持基板（S）的直流电压之间施加DC电压的DC等离子体增强CVD工艺，在含碳气体和氢气的混合物的基板（S）上生长金刚石施加电压（13）。在通过施加直流电压生长金刚石的步骤中，在预定的时刻在级电极和施加电极之间施加与用于金刚石生长的直流电压相反极性的单个脉冲电压。质量钻石以稳定的增长率生产。

8. 发明申请

US20150259802A1 APPARATUS AND METHOD FOR DEPOSITING A COATING ON A SUBSTRATE AT ATMOSPHERIC PRESSURE 审中-公开
标题翻译：在大气压下沉积基底上的涂层的装置和方法
公开(公告)号：US20150259802A1
公开(公告)日：2015-09-17
申请号：US14657327
申请日：2015-03-13
申请人： The Board of Trustees of the University of Illinois
发明人： David N. Ruzic , Yuilun Wu , Ivan Shchelkanov , Jungmi Hong , Zihao Ouyang , Tae Seung Cho
IPC分类号： C23C16/517 , C23C14/34 , C23C14/22 , C23C16/448 , C23C16/455
CPC分类号： C23C16/517 , C23C14/0021 , C23C14/228 , C23C14/32 , H05H1/30 , H05H1/46 , H05H1/48 , H05H2001/463
摘要： An apparatus for depositing a coating on a substrate at atmospheric pressure comprises (a) a plasma torch comprising a microwave source coupled to an antenna disposed within a chamber having an open end, the chamber comprising a gas inlet for flow of a gas over the antenna to generate a plasma jet; (b) a substrate positioned outside the open end of the chamber a predetermined distance away from a tip of the antenna; and (c) a target material to be coated on the substrate disposed at the tip of the antenna.
摘要翻译：一种用于在大气压下在衬底上沉积涂层的装置包括（a）等离子体焰炬，其包括耦合到设置在具有开口端的腔室内的天线的微波源，该腔室包括用于气体在天线上流动的气体入口以产生等离子体射流; （b）位于所述腔室的开口端外侧的衬底，距离所述天线的尖端预定距离; 和（c）被涂覆在设置在天线的尖端的基板上的目标材料。

9. 发明申请

US20050214477A1 Chemical vapor deposition plasma process using an ion shower grid 有权
标题翻译：使用离子淋浴网格的化学气相沉积等离子体工艺
公开(公告)号：US20050214477A1
公开(公告)日：2005-09-29
申请号：US10873485
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23C16/00 , C23C16/40 , C23C16/452 , C23C16/517
CPC分类号： C23C16/452 , C23C16/402 , C23C16/517
摘要： A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.
摘要翻译：在具有离子喷淋网格的反应室中进行化学气相沉积工艺，该离子喷淋网格将室分成上部离子产生区域和下部工艺区域，离子喷淋格栅具有相对于一个非平行方向取向的多个孔口离子淋浴网格的表面。工件放置在面向离子喷淋格栅的工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。配备气体混合物，其包括沉积前体物质进入离子产生区域，并且处理区域以足以在从离子产生区域到过程区域的离子喷淋网格上产生压降的抽空速率抽真空，由此离子中的压力发生区域至少是过程区域压力的几倍。通过以下步骤沉积所需厚度的一层材料：（a）施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，和（b）将栅格电位施加到离子喷淋栅格以从等离子体中产生离子通过网格并进入过程区域。

10. 发明授权

US06899054B1 Device for hybrid plasma processing 失效
标题翻译：混合等离子体处理装置
公开(公告)号：US06899054B1
公开(公告)日：2005-05-31
申请号：US10130709
申请日：2000-11-23
申请人： Ladislav Bárdos , Hana Baránková
发明人： Ladislav Bárdos , Hana Baránková
IPC分类号： H05H1/46 , B01J19/08 , C23C16/517 , H01J37/32 , C23C16/00 , C23F1/00 , H01L21/00 , H05H1/00
CPC分类号： H01J37/32192 , C23C16/517 , H01J37/32596 , H01J37/3266
摘要： A device for hybrid plasma processing, particularly for deposition of thin films and for plasma treatment of samples, in a plasma reactor with pumping system characterized in that at least one feeder of microwave power (2) is installed in the plasma reactor (1) and connected to a microwave generator (3) for generation of a microwave plasma (4) in contact with at least one hollow cathode (5) in the plasma reactor, where the hollow cathode is powered from a cathode power generator (6). At least one inlet for a processing gas (7) is installed behind the hollow cathode and the gas is admitted into the plasma reactor through the hollow cathode where a hollow cathode plasma (9) is generated. A magnetic element (10) is used for generation of a perpendicular magnetic field (11) and/or a longitudinal magnetic field (12) at an outlet (13) from the hollow cathode.
摘要翻译：一种用于混合等离子体处理的装置，特别是用于在具有泵送系统的等离子体反应器中沉积薄膜和用于等离子体处理样品的装置，其特征在于至少一个微波功率馈送器（2）安装在等离子体反应器（1）中，并且连接到微波发生器（3），用于产生与等离子体反应器中的至少一个中空阴极（5）接触的微波等离子体（4），其中空心阴极由阴极发电机（6）供电。至少一个用于处理气体的入口（7）安装在空心阴极的后面，气体通过空心阴极进入等离子体反应器，其中产生空心阴极等离子体（9）。磁性元件（10）用于在空心阴极的出口（13）处产生垂直磁场（11）和/或纵向磁场（12）。

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