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1. 发明授权

US5990017A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US5990017A
公开(公告)日：1999-11-23
申请号：US104550
申请日：1998-06-25
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

2. 发明授权

US6024826A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6024826A
公开(公告)日：2000-02-15
申请号：US734797
申请日：1996-10-23
申请人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth Collins , Michael Rice , David Groechel , Gerald Yin , Jon Mohn , Craig Roderick , Douglas Buchberger , Chan-Lon Yang , Jerry Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , C23F1/02 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

3. 发明授权

US06218312B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06218312B1
公开(公告)日：2001-04-17
申请号：US08987509
申请日：1998-10-08
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

4. 发明授权

US6036877A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6036877A
公开(公告)日：2000-03-14
申请号：US648256
申请日：1996-05-13
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , C23C16/517 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32871 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

5. 发明授权

US06440866B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06440866B1
公开(公告)日：2002-08-27
申请号：US09595750
申请日：2000-06-16
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L2100
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

6. 发明授权

US06194325B1 Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography 失效
标题翻译：氧化物蚀刻工艺，对氮化物具有高选择性，适用于不均匀地形的表面
公开(公告)号：US06194325B1
公开(公告)日：2001-02-27
申请号：US08552030
申请日：1995-12-04
申请人： Chan Lon Yang , Jeffrey Marks , Nicolas Bright , Kenneth S. Collins , David Groechel , Peter Keswick
发明人： Chan Lon Yang , Jeffrey Marks , Nicolas Bright , Kenneth S. Collins , David Groechel , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , H01J37/321 , H01L21/31116
摘要： A plasma etch process is described for the etching of oxide with a high selectivity to nitride, including nitride formed on uneven surfaces of a substrate, e.g., on sidewalls of steps on an integrated circuit structure. The addition of one or more hydrogen-containing gases, preferably one or more hydrofluorocarbon gases, to one or more fluorine-substituted hydrocarbon etch gases and a scavenger for fluorine, in a plasma etch process for etching oxide in preference to nitride, results in a high selectivity to nitride which is preserved regardless of the topography of the nitride portions of the substrate surface. In a preferred embodiment, one or more oxygen-bearing gases are also added to reduce the overall rate of polymer deposition on the chamber surfaces and on the surfaces to be etched, which can otherwise reduce the etch rate and cause excessive polymer deposition on the chamber surfaces. The fluorine scavenger is preferably an electrically grounded silicon electrode associated with the plasma.
摘要翻译：描述了用于蚀刻具有对氮化物的高选择性的氧化物的等离子体蚀刻工艺，包括在衬底的不平坦表面上形成的氮化物，例如在集成电路结构上的台阶侧壁上。在优先于氮化物蚀刻氧化物的等离子体蚀刻工艺中，向一种或多种氟取代烃蚀刻气体和氟清除剂中加入一种或多种含氢气体，优选一种或多种氢氟烃气体，导致对氮化物的高选择性，与衬底表面的氮化物部分的形貌无关地被保留。在一个优选的实施方案中，还加入一种或多种含氧气体以降低腔室表面和待蚀刻表面上的聚合物沉积的总体速率，否则可降低蚀刻速率并导致室上过量的聚合物沉积表面。氟清除剂优选为与等离子体相关联的电接地硅电极。

7. 发明授权

US06399514B1 High temperature silicon surface providing high selectivity in an oxide etch process 失效
标题翻译：高温硅表面在氧化蚀刻工艺中提供高选择性
公开(公告)号：US06399514B1
公开(公告)日：2002-06-04
申请号：US09645924
申请日：2000-08-24
申请人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
发明人： Jeffrey Marks , Jerry Yuen-Kui Wong , David W. Groechel , Peter R. Keswick , Chan-Lon Yang
IPC分类号： H01L21302
CPC分类号： H01L21/67069 , C23C16/517 , H01F2029/143 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H01L21/6831
摘要： A plasma process for etching oxide and having a high selectivity to silicon including flowing into a plasma reaction chamber a fluorine-containing etching gas and maintaining a temperature of an exposed silicon surface within said chamber at a temperature of between 200° C. and 300° C. An example of the etching gas includes SiF4 and a fluorocarbon gas. The plasma may be generated by a capacitive discharge type plasma generator or by an electromagnetically coupled plasma generator, such as an inductively coupled plasma generator. The high selectivity exhibited by the etch process permits use of an electromagnetically coupled plasma generator, which in turn permits the etch process to be performed at low pressures of between 1 and 30 milliTorr, resulting the etching of vertical sidewalls in the oxide layer.
摘要翻译：一种用于蚀刻氧化物并具有对硅的高选择性的等离子体工艺，包括流入等离子体反应室中的含氟蚀刻气体，并将所述室内的暴露的硅表面的温度保持在200℃至300℃的温度蚀刻气体的实例包括SiF 4和碳氟化合物气体。等离子体可以由电容放电型等离子体发生器或电磁耦合等离子体发生器（诸如电感耦合等离子体发生器）产生。通过蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在1至30毫托之间的低压下进行蚀刻工艺，导致蚀刻氧化物层中的垂直侧壁。

8. 发明授权

US5888414A Plasma reactor and processes using RF inductive coupling and scavenger temperature control 失效
标题翻译：等离子体反应器和使用射频感应耦合和清除温度控制的工艺
公开(公告)号：US5888414A
公开(公告)日：1999-03-30
申请号：US936777
申请日：1997-09-24
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
IPC分类号： C23C16/517 , H01L21/311 , C23F1/00
CPC分类号： H01J37/32458 , C23C16/517 , H01J37/321 , H01J37/32165 , H01J37/32522 , H01J37/3266 , H01J37/32706 , H01L21/31116 , H01F2029/143
摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.
摘要翻译：等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

9. 发明授权

US06444137B1 Method for processing substrates using gaseous silicon scavenger 失效
标题翻译：使用气态硅清除剂处理衬底的方法
公开(公告)号：US06444137B1
公开(公告)日：2002-09-03
申请号：US08673972
申请日：1996-07-01
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
IPC分类号： C23F100
CPC分类号： H01J37/32871 , C23C16/402 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01J2237/334 , H01L21/31116 , H01L21/6831
摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.
摘要翻译：等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

10. 发明授权

US06251792B1 Plasma etch processes 失效
标题翻译：等离子体蚀刻工艺
公开(公告)号：US06251792B1
公开(公告)日：2001-06-26
申请号：US08948560
申请日：1997-10-10
申请人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
发明人： Kenneth S. Collins , Craig A. Roderick , John R. Trow , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel , Jay D. Pinson, II , Tetsuya Ishikawa , Lawrence Chang-Lai Lei , Masato M. Toshima , Gerald Zheyao Yin
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/507 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831
摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

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