专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07060984B2 Multi-charged beam lens and charged beam exposure apparatus using the same 有权
标题翻译：多光束透镜和使用其的带电束曝光装置
公开(公告)号：US07060984B2
公开(公告)日：2006-06-13
申请号：US10902789
申请日：2004-08-02
申请人： Kenichi Nagae , Haruhito Ono , Sayaka Tanimoto
发明人： Kenichi Nagae , Haruhito Ono , Sayaka Tanimoto
IPC分类号： H01J3/14
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/023 , H01J37/12 , H01J37/3177
摘要： A multi-charged beam lens formed by stacking, via insulators, at least three substrates each having a plurality of apertures which pass charged beams. The lens includes a voltage application portion arranged on at least one of the at least three substrates. The voltage application portion and the insulators are connected via an insulating portion consisting of an oxide material in order to achieve electrical isolation between the voltage application portion and the insulators.
摘要翻译：通过绝缘体堆叠至少三个基板而形成的多电荷束透镜，每个基板具有通过带电束的多个孔。透镜包括布置在至少三个基板中的至少一个基板上的电压施加部分。电压施加部分和绝缘体通过由氧化物材料组成的绝缘部分连接，以实现电压施加部分和绝缘体之间的电隔离。

2. 发明申请

US20050077475A1 Multi-charged beam lens and charged beam exposure apparatus using the same 有权
标题翻译：多光束透镜和使用其的带电束曝光装置
公开(公告)号：US20050077475A1
公开(公告)日：2005-04-14
申请号：US10902789
申请日：2004-08-02
申请人： Kenichi Nagae , Haruhito Ono , Sayaka Tanimoto
发明人： Kenichi Nagae , Haruhito Ono , Sayaka Tanimoto
IPC分类号： G03F7/20 , H01J37/02 , H01J37/12 , H01J37/14 , H01J37/305 , H01J37/317 , H01L21/027 , H01J3/14
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/023 , H01J37/12 , H01J37/3177
摘要： A multi-charged beam lens formed by stacking three or more electrode substrates via insulators comprises a voltage application portion arranged on at least one of said at least three substrates and an insulating portion which insulates said voltage application portion from said insulators.
摘要翻译：通过绝缘体堆叠三个或更多个电极基板而形成的多电荷束流透镜包括布置在所述至少三个基板中的至少一个基板上的电压施加部分和将所述电压施加部分与所述绝缘体绝缘的绝缘部分。

3. 发明申请

US20050072939A1 Electron beam writing equipment and electron beam writing method 有权
标题翻译：电子束写入设备和电子束写入方法
公开(公告)号：US20050072939A1
公开(公告)日：2005-04-07
申请号：US10957695
申请日：2004-10-05
申请人： Yasunari Sohda , Osamu Kamimura , Yoshinori Nakayama , Sayaka Tanimoto , Masato Muraki
发明人： Yasunari Sohda , Osamu Kamimura , Yoshinori Nakayama , Sayaka Tanimoto , Masato Muraki
IPC分类号： G01B11/00 , G03F7/20 , G03F9/00 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01L21/68
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2482
摘要： The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light. Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.
摘要翻译：本发明提供了一种写入技术，其能够通过光执行标记检测的电子束写入设备中执行高精度重叠写入。电子束写入设备具有电子源; 电子光学系统将从电子源发射的电子束照射到样品上以进行扫描以在样品上形成所需图案; 安装样品的阶段; 设置在台上的标记基板; 意味着将用于位置检测的光束照射在与用于照射标记基板的电子束的照射方向相同的一侧; 光检测装置与发出用于检测在标记基板上反射的反射光的光束相同的一侧; 以及电子检测装置，其相对于用于检测通过将电子束照射到标记基板上而获得的透射电子的标记基板在与光检测装置相反的一侧，其中光束和电子束的相对位置信息为基于检测到的反射光和透射电子的信号获得。

4. 发明授权

US07655907B2 Charged particle beam apparatus and pattern measuring method 有权
标题翻译：带电粒子束装置和图案测量方法
公开(公告)号：US07655907B2
公开(公告)日：2010-02-02
申请号：US11704227
申请日：2007-02-09
申请人： Sayaka Tanimoto , Hiromasa Yamanashi , Muneyuki Fukuda , Yasunari Sohda
发明人： Sayaka Tanimoto , Hiromasa Yamanashi , Muneyuki Fukuda , Yasunari Sohda
IPC分类号： H01J37/26
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/04735 , H01J2237/216 , H01J2237/2817
摘要： It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.
摘要翻译：它是提供一种能够通过初级带电粒子束快速处理衬底上许多测量点的技术。在控制系统中，对于晶片上的每个测量点（初级带电粒子束的照射位置），计算器获得从相对测量点的表面电位分布函数获得的相关测量点的表面电位的概率，并存储在数据存储单元中。基于概率，计算器确定相关测量点处的带电粒子光学器件的设定参数（例如延迟电压）的幅度。然后，计算器通过在确定的幅度的范围内改变设定参数来检查主要带电粒子束的聚焦状态，并确定要用于测量的设定参数。

5. 发明申请

US20090140143A1 CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREFOR 有权
标题翻译：充电颗粒光束装置及其控制方法
公开(公告)号：US20090140143A1
公开(公告)日：2009-06-04
申请号：US12142284
申请日：2008-06-19
申请人： Muneyuki FUKUDA , Hiromasa Yamanashi , Sayaka Tanimoto , Yasunari Souda , Osamu Nasu
发明人： Muneyuki FUKUDA , Hiromasa Yamanashi , Sayaka Tanimoto , Yasunari Souda , Osamu Nasu
IPC分类号： G21K5/00 , G21K1/00
CPC分类号： H01J37/28 , H01J37/026 , H01J37/265 , H01J2237/24564
摘要： Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.
摘要翻译：实际上测量半导体晶片13的直径上的多个点上的电位。然后，通过在直径方向上相邻的实测点之间的电位的样条插值来获得直径上的电位分布。此后，通过对在半导体晶片13的中心周围的圆周方向相邻的点之间的电位进行样条插补，获得关于半导体晶片13中的电位分布的二维内插函数。然后，在通过将该观察点的坐标值代入二维插值函数来获得半导体晶片13。结果，可以精确地估计由于晶片带电引起的电位分布，并且可以将延迟电位设置为适当的值。

6. 发明授权

US07105842B2 Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
标题翻译：带电粒子束光刻方法及带电粒子束光刻设备
公开(公告)号：US07105842B2
公开(公告)日：2006-09-12
申请号：US10958141
申请日：2004-10-05
申请人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
IPC分类号： H01J37/302 , G03F7/20
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/317
摘要： Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要翻译：本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束通过多个消隐器到样品。设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

7. 发明授权

US07098464B2 Electron beam writing equipment and electron beam writing method 有权
标题翻译：电子束写入设备和电子束写入方法
公开(公告)号：US07098464B2
公开(公告)日：2006-08-29
申请号：US10957695
申请日：2004-10-05
申请人： Yasunari Sohda , Osamu Kamimura , Yoshinori Nakayama , Sayaka Tanimoto , Masato Muraki
发明人： Yasunari Sohda , Osamu Kamimura , Yoshinori Nakayama , Sayaka Tanimoto , Masato Muraki
IPC分类号： H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2482
摘要： The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.
摘要翻译：本发明提供了一种写入技术，其能够通过光执行标记检测的电子束写入设备中执行高精度重叠写入。电子束写入设备具有电子源; 电子光学系统将从电子源发射的电子束照射到样品上以进行扫描以在样品上形成所需图案; 安装样品的阶段; 设置在台上的标记基板; 意味着将用于位置检测的光束照射在与用于照射标记基板的电子束的照射方向相同的一侧; 光检测装置与发出用于检测在标记基板上反射的反射光的光束相同的一侧; 以及电子检测装置，其相对于用于检测通过将电子束照射到标记基板上而获得的透射电子的标记基板在与光检测装置相反的一侧，其中光束和电子束的相对位置信息为基于检测到的反射光和透射电子的信号获得。

8. 发明授权

US08026482B2 Charged particle beam apparatus and control method therefor 有权
标题翻译：带电粒子束装置及其控制方法
公开(公告)号：US08026482B2
公开(公告)日：2011-09-27
申请号：US12142284
申请日：2008-06-19
申请人： Muneyuki Fukuda , Hiromasa Yamanashi , Sayaka Tanimoto , Yasunari Souda , Osamu Nasu
发明人： Muneyuki Fukuda , Hiromasa Yamanashi , Sayaka Tanimoto , Yasunari Souda , Osamu Nasu
IPC分类号： G21K5/00 , G21K1/00
CPC分类号： H01J37/28 , H01J37/026 , H01J37/265 , H01J2237/24564
摘要： Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.
摘要翻译：实际上测量半导体晶片13的直径上的多个点上的电位。然后，通过在直径方向上相邻的实测点之间的电位的样条插值来获得直径上的电位分布。此后，通过对在半导体晶片13的中心周围的圆周方向相邻的点之间的电位进行样条插补，获得关于半导体晶片13中的电位分布的二维内插函数。然后，在通过将该观察点的坐标值代入二维插值函数来获得半导体晶片13。结果，可以精确地估计由于晶片带电引起的电位分布，并且可以将延迟电位设置为适当的值。

9. 发明授权

US07906761B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07906761B2
公开(公告)日：2011-03-15
申请号：US12037623
申请日：2008-02-26
申请人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： G01N23/225 , H01J49/00
CPC分类号： G01N23/225 , H01J37/265 , H01J37/28
摘要： A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
摘要翻译：一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。此外，优化了许多光学参数和设备参数。此外，测量和调整所选择的一次光束的性质。

10. 发明授权

US07880143B2 Electron beam apparatus 有权
标题翻译：电子束装置
公开(公告)号：US07880143B2
公开(公告)日：2011-02-01
申请号：US11958717
申请日：2007-12-18
申请人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/0435 , H01J2237/2448 , H01J2237/24564 , H01J2237/24592
摘要： A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.
摘要翻译：由单个电子源形成多个主光束，通过至少一个主光束来控制样品的表面电荷，同时使用除此之外的一次光束进行样品的检查。此外，对于用于表面电荷控制的一次光束的曝光区域和用于检查的主光束的曝光区域，单独设置表面电场强度。此外，控制用于表面电荷控制的主光束的电流以及用于表面电荷控制的主光束和用于检查的主光束之间的间隔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式