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1. 发明授权

US08193493B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US08193493B2
公开(公告)日：2012-06-05
申请号：US13032050
申请日：2011-02-22
申请人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： G01N23/00 , G01N23/225
CPC分类号： G01N23/225 , H01J37/265 , H01J37/28
摘要： A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
摘要翻译：一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。此外，优化了许多光学参数和设备参数。此外，测量和调整所选择的一次光束的性质。

2. 发明申请

US20100133433A1 ELECTRON BEAM APPARATUS 有权
标题翻译：电子束设备
公开(公告)号：US20100133433A1
公开(公告)日：2010-06-03
申请号：US11958717
申请日：2007-12-18
申请人： Sayaka TANIMOTO , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka TANIMOTO , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： G01N23/225
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/0435 , H01J2237/2448 , H01J2237/24564 , H01J2237/24592
摘要： A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.
摘要翻译：由单个电子源形成多个主光束，通过至少一个主光束来控制样品的表面电荷，同时使用除此之外的一次光束进行样品的检查。此外，对于用于表面电荷控制的一次光束的曝光区域和用于检查的主光束的曝光区域，单独设置表面电场强度。此外，控制用于表面电荷控制的主光束的电流以及用于表面电荷控制的主光束和用于检查的主光束之间的间隔。

3. 发明授权

US07906761B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07906761B2
公开(公告)日：2011-03-15
申请号：US12037623
申请日：2008-02-26
申请人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： G01N23/225 , H01J49/00
CPC分类号： G01N23/225 , H01J37/265 , H01J37/28
摘要： A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
摘要翻译：一种能够实现多光束型半导体检查装置中具有各种性质的样品的高缺陷检测灵敏度和高检测速度的带电粒子束装置。使样品上的一次光束的分配是可变的，此外，基于样品的性质选择用于以最佳检查规格和高速进行检查的光束分配。此外，优化了许多光学参数和设备参数。此外，测量和调整所选择的一次光束的性质。

4. 发明授权

US07880143B2 Electron beam apparatus 有权
标题翻译：电子束装置
公开(公告)号：US07880143B2
公开(公告)日：2011-02-01
申请号：US11958717
申请日：2007-12-18
申请人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
发明人： Sayaka Tanimoto , Hiroya Ohta , Hiroshi Makino , Ryuichi Funatsu
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/0435 , H01J2237/2448 , H01J2237/24564 , H01J2237/24592
摘要： A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.
摘要翻译：由单个电子源形成多个主光束，通过至少一个主光束来控制样品的表面电荷，同时使用除此之外的一次光束进行样品的检查。此外，对于用于表面电荷控制的一次光束的曝光区域和用于检查的主光束的曝光区域，单独设置表面电场强度。此外，控制用于表面电荷控制的主光束的电流以及用于表面电荷控制的主光束和用于检查的主光束之间的间隔。

5. 发明申请

US20090309022A1 APPARATUS FOR INSPECTING A SUBSTRATE, A METHOD OF INSPECTING A SUBSTRATE, A SCANNING ELECTRON MICROSCOPE, AND A METHOD OF PRODUCING AN IMAGE USING A SCANNING ELECTRON MICROSCOPE 审中-公开
标题翻译：用于检查基板的装置，检查基板的方法，扫描电子显微镜以及使用扫描电子显微镜产生图像的方法
公开(公告)号：US20090309022A1
公开(公告)日：2009-12-17
申请号：US12480443
申请日：2009-06-08
申请人： Yasuhiro GUNJI , Akira Fujii , Hiroyuki Takahashi , Ryuichi Funatsu , Toshifumi Honda , Takashi Hiroi , Hiroshi Makino
发明人： Yasuhiro GUNJI , Akira Fujii , Hiroyuki Takahashi , Ryuichi Funatsu , Toshifumi Honda , Takashi Hiroi , Hiroshi Makino
IPC分类号： G01N23/00 , H01J3/14
CPC分类号： G01N23/2251 , G01N2223/646 , H01J37/265 , H01J37/28 , H01J2237/202 , H01J2237/216 , H01J2237/2482 , H01J2237/2817
摘要： An object of the present invention provides an inspection apparatus and an inspection method which use an electron beam image to accurately detect a defect that is difficult to detect in an optical image, the apparatus and method also enabling prevention of a possible decrease in focus accuracy of an inspection image which affect the defect detection. To accomplish the object, the present invention includes a height measurement section which measures height of the electron beam irradiation position on the substrate after the substrate is loaded onto a movable stage, a height correction processing section which corrects the measured height, and a control section which adjusts a focus of the electron beam according to the height corrected by the height correction processing section, wherein a stage position set when the height measurement section measures the height differs from a stage position set when the substrate is irradiated with the electron beam, and the height correction processing section corrects a possible deviation in height resulting from movement from the stage position for the height measurement to the stage position for the electron beam irradiation.
摘要翻译：本发明的目的是提供一种使用电子束图像来精确地检测光学图像中难以检测的缺陷的检查装置和检查方法，该装置和方法还能够防止可能降低聚焦精度影响缺陷检测的检查图像。为了实现该目的，本发明包括一个高度测量部分，其测量将基板装载到可移动平台上之后的基板上的电子束照射位置的高度，校正测量高度的高度校正处理部分，以及控制部分其根据由高度校正处理部校正的高度来调整电子束的焦点，其中当高度测量部分测量高度时设置的台阶位置与当基板被电子束照射时设定的台位置不同，以及高度校正处理部分校正由高度测量的台位置到用于电子束照射的台位置的运动导致的高度偏差。

6. 发明授权

US07271385B2 Inspection method and inspection apparatus using electron beam 失效
标题翻译：使用电子束的检查方法和检查装置
公开(公告)号：US07271385B2
公开(公告)日：2007-09-18
申请号：US11234313
申请日：2005-09-26
申请人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
发明人： Yasuhiro Gunji , Taku Ninomiya , Ryuichi Funatsu , Yoshikazu Inada , Kenjirou Yamamoto , Mari Nozoe
IPC分类号： G01R31/302
CPC分类号： G01R31/305 , H01J37/222 , H01J37/244 , H01J37/268 , H01J37/28 , H01J2237/24564 , H01J2237/24592 , H01J2237/2594 , H01J2237/2817
摘要： An inspection method and an inspection apparatus using an electron beam enabling more detailed and quantitative evaluation at a high throughput level. The method comprises the steps of irradiating, based on previously prepared information concerning a defect position on the surface of a sample, the defect and its vicinity with an electron beam a plurality of times at predetermined intervals; detecting an electron signal secondarily generated from the sample surface by the electron beam; imaging an electron signal detected by the previously specified n-th or later electron beam irradiation; and measuring the resistance or a leakage amount of the defective portion of the sample surface in accordance with the degree of charge relaxation by monitoring the charge relaxation state of the sample surface based on the electron beam image information.
摘要翻译：使用电子束的检查方法和检查装置能够在高通量水平下进行更详细和定量的评估。该方法包括以预定间隔以电子束多次照射预先准备的关于样品表面上的缺陷位置的信息，缺陷及其附近的信息的步骤; 通过电子束检测从样品表面二次产生的电子信号; 对由先前指定的第n或更晚的电子束照射检测的电子信号成像; 并且通过基于电子束图像信息监测样品表面的电荷弛豫状态，根据电荷弛豫程度来测量样品表面的缺陷部分的电阻或泄漏量。

7. 发明授权

US07071468B2 Circuit pattern inspection method and its apparatus 失效
标题翻译：电路图形检测方法及其装置
公开(公告)号：US07071468B2
公开(公告)日：2006-07-04
申请号：US10957748
申请日：2004-10-05
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01N21/00
CPC分类号： G01N23/2251 , G01N21/95607 , H01J2237/2817
摘要： A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.
摘要翻译：可以在确认在检查缺陷时检测到的缺陷能够容易地设定最佳阈值的电路图案检查方法和装置，并且能够容易地形成配方。将电子束照射到其表面上形成有电路图案的试样的电路图案检查，根据来自试样的反射电子的二次电子形成检查图像和参考图像，并从检查图像与参考图像之间的差异，其中从异常部分的图像获得异常部分的多个特征量，并且通过改变为特征量虚拟设置的检查阈值来选择性地显示异常部分。

8. 发明申请

US20050194536A1 Charged particle beam apparatus 审中-公开
标题翻译：带电粒子束装置
公开(公告)号：US20050194536A1
公开(公告)日：2005-09-08
申请号：US11103526
申请日：2005-04-12
申请人： Masanari Furiki , Kouichi Kurosawa , Takehiko Konno , Ryuichi Funatsu
发明人： Masanari Furiki , Kouichi Kurosawa , Takehiko Konno , Ryuichi Funatsu
IPC分类号： G01N23/225 , H01J37/28 , H01J37/08 , G21K5/10
CPC分类号： H01J37/261 , G01N23/225 , H01J37/28 , H01J2237/2817
摘要： The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.
摘要翻译：本发明的目的是通过电路图形检查装置快速且精确地发送已经指定的缺陷的位置信息，使得位置信息在另一装置中被有效地使用。通过使用检查装置的带电粒子束照射机构在缺陷的周边区域进行标记。该标记实现与另一装置共享缺陷位置信息。标记技术包括通过照射带电粒子束沉积沉积物并充电。检查装置中的标记允许将缺陷位置信息更正确且容易地传送到另一装置，结果提高了分析精度，缩短了分析时间。

9. 发明申请

US20090045338A1 Inspection method and apparatus using an electron beam 失效
标题翻译：使用电子束的检查方法和装置
公开(公告)号：US20090045338A1
公开(公告)日：2009-02-19
申请号：US12222606
申请日：2008-08-12
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
摘要翻译：检查方法和装置用电子束照射其上形成有图案的样品，使得可以基于样品发射的二次电子或反射电子产生检查图像和参考图像。基于检查图像和参考图像之间的每个像素的半色调值的差异来确定异常图案。从异常图案的图像获得异常图案的多个特征量，并且基于异常图案的多个特征量的分布，指定用于对异常图案的类型进行分类的范围。因此，可以从通过检查提取的许多缺陷中提取期望的缺陷。

10. 发明授权

US07425704B2 Inspection method and apparatus using an electron beam 失效
标题翻译：使用电子束的检查方法和装置
公开(公告)号：US07425704B2
公开(公告)日：2008-09-16
申请号：US11354247
申请日：2006-02-15
申请人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
发明人： Hiroshi Miyai , Ryuichi Funatsu , Taku Ninomiya , Yasuhiko Nara
IPC分类号： G01N13/16
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2817
摘要： An inspection method and apparatus irradiates a sample on which a pattern is formed with an electron beam, so that an inspection image and a reference image can be generated on the basis of a secondary electron or a reflected electron emitted by the sample. An abnormal pattern is determined based on a difference in halftone values of each pixel between the inspection image and the reference image. A plurality of feature quantities of the abnormal pattern are obtained from an image of the abnormal pattern, and, based on the distribution of the plurality of feature quantities of the abnormal pattern, a range for classifying the type of the abnormal pattern is designated. Thus, a desired defect can be extracted from many defects extracted by inspection.
摘要翻译：检查方法和装置用电子束照射其上形成有图案的样品，使得可以基于样品发射的二次电子或反射电子产生检查图像和参考图像。基于检查图像和参考图像之间的每个像素的半色调值的差异来确定异常图案。从异常图案的图像获得异常图案的多个特征量，并且基于异常图案的多个特征量的分布，指定用于对异常图案的类型进行分类的范围。因此，可以从通过检查提取的许多缺陷中提取期望的缺陷。

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