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1. 发明授权

US06711531B1 Temperature control simulation method and apparatus 失效
标题翻译：温度控制仿真方法及装置
公开(公告)号：US06711531B1
公开(公告)日：2004-03-23
申请号：US09369926
申请日：1999-08-09
申请人： Kazuo Tanaka , Hideto Yamaguchi , Kenzo Urabe
发明人： Kazuo Tanaka , Hideto Yamaguchi , Kenzo Urabe
IPC分类号： G06G748
CPC分类号： G06G7/66
摘要： A temperature control simulation method and apparatus for forming a temperature system simulation model on a computer, provide substantially the same response or simulation characteristics as a temperature change in an actual furnace, whereby a temperature control algorithm can be developed and the method or manner of manipulating the temperature control can be learned without using an actual furnace. A transfer function is determined which represents a relationship between a heater input and a temperature output. A temperature control simulation for a heating furnace is executed using the transfer function of a heating furnace as a transfer function that a temperature system simulation device uses.
摘要翻译：用于在计算机上形成温度系统模拟模型的温度控制模拟方法和装置提供与实际炉中的温度变化基本相同的响应或模拟特性，由此可以开发温度控制算法，以及操作的方法或方式可以在不使用实际炉的情况下学习温度控制。确定表示加热器输入和温度输出之间的关系的传递函数。使用加热炉的传递函数作为温度系统模拟装置使用的传递函数来执行加热炉的温度控制模拟。

2. 发明授权

US06496749B1 Semiconductor producing apparatus and temperature control method therefor 有权
标题翻译：半导体制造装置及其温度控制方法
公开(公告)号：US06496749B1
公开(公告)日：2002-12-17
申请号：US09413467
申请日：1999-10-06
申请人： Hideto Yamaguchi , Kazuo Tanaka , Kenzo Urabe
发明人： Hideto Yamaguchi , Kazuo Tanaka , Kenzo Urabe
IPC分类号： G06F1900
CPC分类号： H01L21/67248
摘要： A semiconductor producing apparatus is capable of quickly and accurately changing a controlled variable to a target value to thereby make the controlled variable quickly follow the target value. Moreover, the controlled variable and target value can be adjusted automatically, thus improving the productivity of a process. The semiconductor producing apparatus includes a PID adjustment section to which a target value and a detected control value are inputted through an adder, a pattern generation section having an approximate function for calculating a pattern output and making it possible to change the pattern output in accordance wit parameter values of the approximate function, and a switcher for switching between an output including at least an output of the pattern generation section and an output of the PID adjustment section to thereby generate an output.
摘要翻译：半导体制造装置能够快速，准确地将受控变量变更为目标值，从而使受控变量快速地追随目标值。此外，控制变量和目标值可以自动调整，从而提高过程的生产率。半导体制造装置包括通过加法器输入目标值和检测到的控制值的PID调整部，具有用于计算图案输出的近似函数的图案生成部，并且能够根据机智改变图案输出近似功能的参数值，以及用于在至少包括模式生成部的输出的输出与PID调整部的输出之间切换的切换器，从而生成输出。

3. 发明授权

US09418881B2 Substrate processing apparatus capable of switching control mode of heater 有权
标题翻译：能够切换加热器的控制模式的基板处理装置
公开(公告)号：US09418881B2
公开(公告)日：2016-08-16
申请号：US13192784
申请日：2011-07-28
申请人： Shinobu Sugiura , Masaaki Ueno , Kazuo Tanaka , Masashi Sugishita , Hideto Yamaguchi , Kenji Shirako
发明人： Shinobu Sugiura , Masaaki Ueno , Kazuo Tanaka , Masashi Sugishita , Hideto Yamaguchi , Kenji Shirako
IPC分类号： H01L21/67 , G05D23/19 , G05D23/20 , C23C14/54 , C23C16/458 , C23C16/52 , G05D23/22
CPC分类号： H01L21/67248 , C23C14/541 , C23C16/4584 , C23C16/52 , G05D23/1931 , G05D23/22 , H01L21/67109
摘要： Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple.
摘要翻译：提供一种当使用温度传感器控制热处理时能够抑制劣化的基板处理装置。基板处理装置包括加热装置，其构造成加热容纳基板的处理室; 第一温度检测装置，被配置为使用第一热电偶检测关于所述基板的温度; 第二温度检测装置，被配置为使用第二热电偶检测关于加热装置的温度; 控制单元，被配置为基于由第一温度检测装置检测的温度和由第二温度检测装置检测的温度来控制加热装置; 以及控制切换装置，被配置为基于由第一温度检测装置和第二温度检测装置检测到的温度来控制控制单元，使得控制单元在第一控制模式和第二控制模式之间切换，其中耐热性的第一热电偶的温度检测性能高于第一热电偶的温度检测性能。

4. 发明授权

US06746908B2 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device 有权
标题翻译：温度控制方法，热处理装置以及半导体装置的制造方法
公开(公告)号：US06746908B2
公开(公告)日：2004-06-08
申请号：US09964863
申请日：2001-09-28
申请人： Kazuo Tanaka , Masaaki Ueno , Minoru Nakano , Hideto Yamaguchi
发明人： Kazuo Tanaka , Masaaki Ueno , Minoru Nakano , Hideto Yamaguchi
IPC分类号： H01L218238
CPC分类号： H01L21/67248 , C23C16/46 , C30B25/16 , C30B31/18 , F27D19/00 , F27D2019/0018 , F27D2019/0028
摘要： A temperature control method is provided which is capable of performing quick, accurate, and error-free soaking control over all wafer areas to be thermally treated at a target temperature without requiring any skilled operator and which can be automated by using a computer. In the temperature control method of controlling a heating apparatus having at least two heating zones in such a manner that temperatures detected at predetermined locations equal a target temperature therefor, temperatures are detected at predetermined locations the number of which is larger than the number of the heating zones, and the heating apparatus is controlled in such a manner that the target temperature falls between a maximum value and a minimum value of a plurality of detected temperatures.
摘要翻译：提供一种温度控制方法，其能够对目标温度下热处理的所有晶片区域执行快速，准确和无错误的均热控制，而不需要任何熟练的操作者并且可以通过使用计算机自动化。在控制具有至少两个加热区域的加热装置的温度控制方法中，使得在预定位置处检测的温度等于目标温度，在预定位置检测温度，其数量大于加热次数区域，并且加热装置以使得目标温度落在多个检测温度的最大值和最小值之间的方式被控制。

5. 发明授权

US08973253B2 Method and apparatus for manufacturing metal plate chip resistors 有权
标题翻译：制造金属板片式电阻器的方法和装置
公开(公告)号：US08973253B2
公开(公告)日：2015-03-10
申请号：US14074858
申请日：2013-11-08
申请人： Tatsuki Hirano , Kazuo Tanaka
发明人： Tatsuki Hirano , Kazuo Tanaka
IPC分类号： H01C17/00 , H01C17/245
CPC分类号： H01C17/006 , H01C17/245
摘要： The object of the invention is to provide a method and an apparatus that allow production of metal plate chip resistors having a relatively low resistance with high accuracy and yield through simple process. The object is achieved by apparatus for manufacturing metal plate chip resistors including cutting mold for cutting intermediate product strip transversely to obtain worked product chip, ohm meter for measuring the resistance of the worked product chip, control device having a calculating part for performing a calculation using the resistance measured by the ohm meter to work out a width in which the strip is to be cut transversely so as to obtain a worked product chip of a desired resistance, and cutting width adjustor for making an adjustment so that the strip is to be cut transversely in the width obtained from the calculating part.
摘要翻译：本发明的目的是提供一种通过简单的工艺制造具有相对较低电阻的金属板片式电阻器的方法和装置，其具有高精度和高产率。该目的是通过用于制造金属板片电阻器的装置实现的，包括用于横向切割中间产品带的切割模具，以获得加工产品芯片，用于测量加工产品芯片的电阻的欧姆表，具有用于执行计算的计算部分的控制装置由欧姆计测量的电阻以横向切割条的宽度，以获得期望电阻的加工产品芯片，以及用于进行调整的切割宽度调节器，使得条被切割横向于从计算部分获得的宽度。

6. 发明授权

US08590141B2 Method and apparatus for manufacturing metal plate chip resistors 有权
标题翻译：制造金属板片式电阻器的方法和装置
公开(公告)号：US08590141B2
公开(公告)日：2013-11-26
申请号：US13196078
申请日：2011-08-02
申请人： Tatsuki Hirano , Kazuo Tanaka
发明人： Tatsuki Hirano , Kazuo Tanaka
IPC分类号： H01C17/00
CPC分类号： H01C17/006 , H01C17/245
摘要： The object of the invention is to provide a method and an apparatus that allow production of metal plate chip resistors having a relatively low resistance with high accuracy and yield through simple process. The object is achieved by apparatus 10 for manufacturing metal plate chip resistors including cutting mold 21 for cutting intermediate product strip 14 transversely to obtain worked product chip 16a, ohm meter 22 for measuring the resistance of the worked product chip 16a, control device 23 having a calculating part for performing a calculation using the resistance measured by the ohm meter 22 to work out a width in which the strip 14 is to be cut transversely so as to obtain a worked product chip of a desired resistance, and cutting width adjusting means 26, 27 for making an adjustment so that the strip 14 is to be cut transversely in the width obtained from the calculating part.
摘要翻译：本发明的目的是提供一种通过简单的工艺制造具有相对较低电阻的金属板片式电阻器的方法和装置，其具有高精度和高产率。该目的是通过用于制造金属板片式电阻器的装置10实现的，包括用于横向切割中间产品条带14的切割模具21，以获得加工产品芯片16a，用于测量加工产品芯片16a的电阻的欧姆计22，具有使用由欧姆计22测量的电阻进行计算的计算部分，以计算要横向切割条带14的宽度，以获得期望电阻的加工产品芯片;以及切割宽度调节装置26， 27，用于进行调整，使得条带14在从计算部分获得的宽度上横向切割。

7. 发明授权

US08584783B2 Motorcycle with supercharger 有权
标题翻译：带增压器的摩托车
公开(公告)号：US08584783B2
公开(公告)日：2013-11-19
申请号：US13531361
申请日：2012-06-22
申请人： Daisuke Saeki , Kazuo Tanaka
发明人： Daisuke Saeki , Kazuo Tanaka
IPC分类号： B62M27/02
CPC分类号： B62M7/02 , B62K19/30 , F02B33/32 , F02M35/162
摘要： A motorcycle includes a combustion engine (E) of a type, in which a cylinder block (34) protrudes upwardly from a crankcase (32), an air cleaner unit (42) for substantially purifying an air, and a supercharger (44) for taking a substantially purified air from the air cleaner unit (42) thereinto and supplying the air towards the combustion engine (E). The supercharger (44) is disposed rearwardly of the cylinder block (34) and the air cleaner unit (42) is disposed rearwardly thereof. Also, a surge tank (48) is disposed rearwardly upwardly of the cylinder block (34) of the combustion engine (E) and above the supercharger (44).
摘要翻译：摩托车包括一种内燃机（E），其中气缸体（34）从曲轴箱（32）向上突出，用于基本上净化空气的空气滤清器单元（42），以及增压器（44），用于从空气滤清器单元（42）中取出基本上净化的空气并将空气供给到内燃机（E）。增压器（44）设置在气缸体（34）的后方，空气滤清器单元（42）设置在气缸体的后方。此外，缓冲罐（48）设置在内燃机（E）的气缸体（34）的上方的上方并且位于增压器（44）的上方。

8. 发明申请

US20130049864A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20130049864A1
公开(公告)日：2013-02-28
申请号：US13589369
申请日：2012-08-20
申请人： Natsuki IKEHATA , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
发明人： Natsuki IKEHATA , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
IPC分类号： H03F3/45
CPC分类号： G11C11/4091 , G11C7/10 , G11C7/1057 , G11C7/1072 , G11C7/1084 , G11C11/4076 , G11C11/4093 , G11C11/4096
摘要： An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.
摘要翻译：差分放大电路的输出信号特性得到改善。当输入数据信号为低电平时，流过第一晶体管的电流将减小，并且第一电阻器和第二电阻器之间的连接（节点）的电位将增加。该电位被输入（负反馈）到第二晶体管的栅极，并且由于该栅极电位增加，所以在增加的方向上调节尾部电流量。当输入数据信号为高电平时，第一晶体管的电流增加，因此节点处的电位降低。因此，第二晶体管的栅极电位（负反馈）减小，并且沿着减小的方向调整尾电流量。因此，在输入波形的上升和下降中，延迟时间相对于输出波形的差别分别减小。

9. 发明授权

US08173806B2 Method for production of quinazolin-4-one derivative 失效
标题翻译：喹唑啉-4-酮衍生物的制备方法
公开(公告)号：US08173806B2
公开(公告)日：2012-05-08
申请号：US12282381
申请日：2007-03-14
申请人： Kazuo Tanaka , Yoshifumi Sato , Takafumi Yoshimura
发明人： Kazuo Tanaka , Yoshifumi Sato , Takafumi Yoshimura
IPC分类号： C07D239/72
CPC分类号： C07D239/88
摘要： In reacting an anthranilic acid derivative represented by the general formula (1), especially the anthranilic acid derivative selected from anthranilic acid, anthranilamide and anthranilate, with formamide, the reaction is attained under the condition of coexistence of acetic acid and a base as a catalyst in the reaction liquid, and it has made it possible to produce a quinazolin-4-one derivative represented by the general formula (2) and useful as a material for medicine intermediates, at high yield with no side production.
摘要翻译：在使通式（1）表示的邻氨基苯甲酸衍生物，特别是选自邻氨基苯甲酸，邻氨基苯甲酰胺和邻氨基苯甲酸酯的邻氨基苯甲酸衍生物与甲酰胺反应时，在乙酸和碱作为催化剂共存的条件下反应在反应液中，可以以高产率生产无副产物的由通式（2）表示的喹唑啉-4-酮衍生物作为医药中间体的材料。

10. 发明授权

US08139332B2 Level conversion circuit and semiconductor integrated circuit device employing the level conversion circuit 有权
标题翻译：电平转换电路和采用电平转换电路的半导体集成电路器件
公开(公告)号：US08139332B2
公开(公告)日：2012-03-20
申请号：US13095480
申请日：2011-04-27
申请人： Kazuo Tanaka , Hiroyuki Mizuno , Rie Nishiyama , Manabu Miyamoto
发明人： Kazuo Tanaka , Hiroyuki Mizuno , Rie Nishiyama , Manabu Miyamoto
IPC分类号： H02H3/20 , H01L23/60
CPC分类号： H03K3/356113 , H01L2924/0002 , H03K3/356104 , H01L2924/00
摘要： In a level conversion circuit mounted in an integrated circuit device using a plurality of high- and low-voltage power supplies, the input to the differential inputs are provided. In a level-down circuit, MOS transistors that are not supplied with 3.3 V between the gate and drain and between the gate and source use a thin oxide layer. In a level-up circuit, a logic operation function is provided.
摘要翻译：在安装在使用多个高压和低压电源的集成电路装置中的电平转换电路中，提供到差分输入的输入。在降压电路中，栅极和漏极之间以及栅极和源极之间未提供3.3 V的MOS晶体管使用薄的氧化物层。在升高电路中，提供逻辑运算功能。

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