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1. 发明申请

US20130049864A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：半导体集成电路设备
公开(公告)号：US20130049864A1
公开(公告)日：2013-02-28
申请号：US13589369
申请日：2012-08-20
申请人： Natsuki IKEHATA , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
发明人： Natsuki IKEHATA , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
IPC分类号： H03F3/45
CPC分类号： G11C11/4091 , G11C7/10 , G11C7/1057 , G11C7/1072 , G11C7/1084 , G11C11/4076 , G11C11/4093 , G11C11/4096
摘要： An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.
摘要翻译：差分放大电路的输出信号特性得到改善。当输入数据信号为低电平时，流过第一晶体管的电流将减小，并且第一电阻器和第二电阻器之间的连接（节点）的电位将增加。该电位被输入（负反馈）到第二晶体管的栅极，并且由于该栅极电位增加，所以在增加的方向上调节尾部电流量。当输入数据信号为高电平时，第一晶体管的电流增加，因此节点处的电位降低。因此，第二晶体管的栅极电位（负反馈）减小，并且沿着减小的方向调整尾电流量。因此，在输入波形的上升和下降中，延迟时间相对于输出波形的差别分别减小。

2. 发明授权

US08723291B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US08723291B2
公开(公告)日：2014-05-13
申请号：US13592949
申请日：2012-08-23
申请人： Toshiaki Yonezu , Takeshi Iwamoto , Shigeki Obayashi , Masashi Arakawa , Kazushi Kono
发明人： Toshiaki Yonezu , Takeshi Iwamoto , Shigeki Obayashi , Masashi Arakawa , Kazushi Kono
IPC分类号： H01L23/62
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut by current exceeding a predetermined value. A first electrode pad is connected to one side of a fuse wiring, a second electrode pad is connected to the other of a fuse wiring, a pollution-control layer is formed in the upper layer and the lower layer of the fuse wiring via an insulating layer. In the fuse wiring, second via hole wiring of a pair is formed in the outside of a first via hole wiring so that the first the via hole wiring is surrounded.
摘要翻译：一种半导体集成电路，其可以使用电熔丝执行可靠的浮雕处理。半导体集成电路包括熔丝布线，第一电极焊盘，第二电极焊盘，污染控制层以及第一通孔布线和第二通孔布线。保险丝布线被超过预定值的电流切断。第一电极焊盘连接到熔丝布线的一侧，第二电极焊盘连接到熔丝布线的另一侧，污染控制层通过绝缘体形成在熔丝布线的上层和下层中层。在熔丝配线中，在第一通孔配线的外侧形成有一对的第二通孔配线，以使第一通孔配线被包围。

3. 发明授权

US08331185B2 Semiconductor device having electrical fuses with less power consumption and interconnection arrangement 有权
标题翻译：具有电功率消耗较小的电熔丝和互连配置的半导体器件
公开(公告)号：US08331185B2
公开(公告)日：2012-12-11
申请号：US12723218
申请日：2010-03-12
申请人： Shigeki Obayashi , Toshiaki Yonezu , Takeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Takahiro Uchida
发明人： Shigeki Obayashi , Toshiaki Yonezu , Takeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Takahiro Uchida
IPC分类号： G11C17/18
CPC分类号： G11C17/18 , G11C17/165 , G11C29/027 , G11C29/028 , G11C29/785 , H01L23/5256 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.
摘要翻译：在熔丝编程电路中，使用第三层或更高层多层金属互连的金属互连实施熔丝元件FS。在每个熔丝编程电路中，使用扫描触发器顺序传送程序信息和熔丝选择信息，并且一个接一个地选择性地电熔熔断器。设置有即使在封装之后也可以被编程的熔丝元件的保险丝编程电路以低功耗和低占用面积实现。

4. 发明申请

US20100165775A1 SEMICONDUCTOR DEVICE HAVING ELECTRICAL FUSES WITH LESS POWER CONSUMPTION AND INTERCONNECTION ARRANGEMENT 有权
标题翻译：具有低功耗和互连布置的电熔丝的半导体器件
公开(公告)号：US20100165775A1
公开(公告)日：2010-07-01
申请号：US12723218
申请日：2010-03-12
申请人： Shigeki OBAYASHI , Toshiaki Yonezu , Tokeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Takahiro Uchida
发明人： Shigeki OBAYASHI , Toshiaki Yonezu , Tokeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Takahiro Uchida
IPC分类号： G11C17/18 , H01L23/525
CPC分类号： G11C17/18 , G11C17/165 , G11C29/027 , G11C29/028 , G11C29/785 , H01L23/5256 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.
摘要翻译：在熔丝编程电路中，使用第三层或更高层多层金属互连的金属互连实施熔丝元件FS。在每个熔丝编程电路中，使用扫描触发器顺序传送程序信息和熔丝选择信息，并且一个接一个地选择性地电熔熔断器。设置有即使在封装之后也可以被编程的熔丝元件的保险丝编程电路以低功耗和低占用面积实现。

5. 发明授权

US07706202B2 Semiconductor device having electrical fuses with less power consumption and interconnection arrangement 有权
标题翻译：具有电功率消耗较小的电熔丝和互连配置的半导体器件
公开(公告)号：US07706202B2
公开(公告)日：2010-04-27
申请号：US11802627
申请日：2007-05-24
申请人： Shigeki Obayashi , Toshiaki Yonezu , Takeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Takahiro Uchida
发明人： Shigeki Obayashi , Toshiaki Yonezu , Takeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Takahiro Uchida
IPC分类号： G11C17/18
CPC分类号： G11C17/18 , G11C17/165 , G11C29/027 , G11C29/028 , G11C29/785 , H01L23/5256 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.
摘要翻译：在熔丝编程电路中，使用第三层或更高层多层金属互连的金属互连实施熔丝元件FS。在每个熔丝编程电路中，使用扫描触发器顺序传送程序信息和熔丝选择信息，并且一个接一个地选择性地电熔熔断器。设置有即使在封装之后也可以被编程的熔丝元件的保险丝编程电路以低功耗和低占用面积实现。

6. 发明申请

US20070280012A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070280012A1
公开(公告)日：2007-12-06
申请号：US11802627
申请日：2007-05-24
申请人： Shigeki Obayashi , Toshiaki Yonezu , Takeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Takahiro Uchida
发明人： Shigeki Obayashi , Toshiaki Yonezu , Takeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Takahiro Uchida
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C17/18 , G11C17/165 , G11C29/027 , G11C29/028 , G11C29/785 , H01L23/5256 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.
摘要翻译：在熔丝编程电路中，使用第三层或更高层多层金属互连的金属互连实施熔丝元件FS。在每个熔丝编程电路中，使用扫描触发器顺序传送程序信息和熔丝选择信息，并且一个接一个地选择性地电熔熔断器。设置有即使在封装之后也可以被编程的熔丝元件的保险丝编程电路以低功耗和低占用面积实现。

7. 发明申请

US20070210414A1 SEMICONDUCTOR DEVICE AND A METHOD OF INCREASING A RESISTANCE VALUE OF AN ELECTRIC FUSE 有权
标题翻译：半导体器件和增加电熔丝电阻值的方法
公开(公告)号：US20070210414A1
公开(公告)日：2007-09-13
申请号：US11683053
申请日：2007-03-07
申请人： Takeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Toshiaki Yonezu , Shigeki Obayashi
发明人： Takeshi Iwamoto , Kazushi Kono , Masashi Arakawa , Toshiaki Yonezu , Shigeki Obayashi
IPC分类号： H01L29/00 , H01L21/82
CPC分类号： H01L23/5256 , H01H85/041 , H01L23/5227 , H01L23/525 , H01L23/528 , H01L23/5283 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/62 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.
摘要翻译：提供一种具有电熔丝结构的半导体器件，其接收要被允许切割的电流的供应，而不损坏保险丝周围的部分。电子熔断器电连接在电子电路和冗余电路之间，作为电子电路的备用电路。在这些电路用树脂密封之后，可以通过从外部接收电流来切断保险丝。电熔丝形成为细层，由主配线和阻挡膜构成。主布线和阻挡膜中的每一个的线膨胀系数大于每个绝缘体层的线膨胀系数。主配线和阻挡膜中的每一个的熔点低于每个绝缘体层的熔点。

8. 发明授权

US08803610B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US08803610B2
公开(公告)日：2014-08-12
申请号：US13589369
申请日：2012-08-20
申请人： Natsuki Ikehata , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
发明人： Natsuki Ikehata , Kazuo Tanaka , Takeo Toba , Masashi Arakawa
IPC分类号： H03F3/45
CPC分类号： G11C11/4091 , G11C7/10 , G11C7/1057 , G11C7/1072 , G11C7/1084 , G11C11/4076 , G11C11/4093 , G11C11/4096
摘要： An output signal characteristic of a differential amplifier circuit is improved. When an input data signal becomes ‘Low’, current flowing through a first transistor will decrease and potential at a connection (a node) between a first resistor and a second resistor will increase. This potential is input (negatively fed back) to the gate of a second transistor, and because this gate potential increases, a tail current amount is adjusted in an increasing direction. When the input data signal becomes ‘High’, the current of the first transistor increases and thus the potential at the node decreases. Thus, the gate potential (negative feedback) of the second transistor decreases, and the tail current amount is adjusted in a decreasing direction. Thus, in the rising and falling of an input waveform, the difference in a delay time with respect to the output waveform decreases, respectively.
摘要翻译：差分放大电路的输出信号特性得到改善。当输入数据信号为“低”时，流过第一晶体管的电流将减小，并且第一电阻和第二电阻之间的连接（节点）的电位将增加。该电位被输入（负反馈）到第二晶体管的栅极，并且由于该栅极电位增加，所以在增加的方向上调节尾部电流量。当输入数据信号为“高”时，第一晶体管的电流增加，因此节点处的电位减小。因此，第二晶体管的栅极电位（负反馈）减小，并且沿着减小的方向调整尾电流量。因此，在输入波形的上升和下降中，延迟时间相对于输出波形的差别分别减小。

9. 发明申请

US20130049166A1 SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：半导体集成电路
公开(公告)号：US20130049166A1
公开(公告)日：2013-02-28
申请号：US13592949
申请日：2012-08-23
申请人： Toshiaki YONEZU , Takeshi Iwamoto , Shigeki Obayashi , Masashi Arakawa , Kazushi Kono
发明人： Toshiaki YONEZU , Takeshi Iwamoto , Shigeki Obayashi , Masashi Arakawa , Kazushi Kono
IPC分类号： H01L23/62
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut by a current exceeding a predetermined value. A first electrode pad is connected to one side of a fuse wiring, a second electrode pad is connected to the other of a fuse wiring, a pollution-control layer is formed in the upper layer and the lower layer of the fuse wiring via an insulating layer. In the fuse wiring, a second via hole wiring of a pair is formed in the outside of a first via hole wiring so that the first via hole wiring is surrounded.
摘要翻译：一种半导体集成电路，其可以使用电熔丝执行可靠的浮雕处理。半导体集成电路包括熔丝布线，第一电极焊盘，第二电极焊盘，污染控制层以及第一通孔布线和第二通孔布线。保险丝布线被超过预定值的电流切断。第一电极焊盘连接到熔丝布线的一侧，第二电极焊盘连接到熔丝布线的另一侧，污染控制层通过绝缘体形成在熔丝布线的上层和下层中层。在保险丝布线中，在第一通孔布线的外侧形成有一对第二通孔布线，使得第一通孔布线被包围。

10. 发明申请

US20100264514A1 SEMICONDUCTOR DEVICE AND A METHOD OF INCREASING A RESISTANCE VALUE OF AN ELECTRIC FUSE 审中-公开
标题翻译：半导体器件和增加电熔丝电阻值的方法
公开(公告)号：US20100264514A1
公开(公告)日：2010-10-21
申请号：US12760648
申请日：2010-04-15
申请人： Takeshi IWAMOTO , Kazushi KONO , Masashi ARAKAWA , Toshiaki YONEZU , Shigeki OBAYASHI
发明人： Takeshi IWAMOTO , Kazushi KONO , Masashi ARAKAWA , Toshiaki YONEZU , Shigeki OBAYASHI
IPC分类号： H01L23/525 , H01L29/86 , H01H85/02
CPC分类号： H01L23/5256 , H01H85/041 , H01L23/5227 , H01L23/525 , H01L23/528 , H01L23/5283 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L23/62 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.
摘要翻译：提供一种具有电熔丝结构的半导体器件，其接收要被允许切割的电流的供应，而不损坏保险丝周围的部分。电子熔断器电连接在电子电路和冗余电路之间，作为电子电路的备用电路。在这些电路用树脂密封之后，可以通过从外部接收电流来切断保险丝。电熔丝形成为细层，由主配线和阻挡膜构成。主布线和阻挡膜中的每一个的线膨胀系数大于每个绝缘体层的线膨胀系数。主配线和阻挡膜中的每一个的熔点低于每个绝缘体层的熔点。

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