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1. 发明申请

US20050093428A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20050093428A1
公开(公告)日：2005-05-05
申请号：US10969015
申请日：2004-10-21
申请人： Kazuaki Kaneko , Hiroshi Umeda , Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Kaneko , Hiroshi Umeda , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L33/14 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/62 , H05B33/00 , H05B33/14
CPC分类号： H01L33/145 , H01L2224/48463 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.
摘要翻译：半导体发光器件包括：半导体衬底; 形成在所述半导体基板上的发光层; 形成在用于限制发光的发光层的一部分上的电流阻挡层; 形成在电流阻挡层和发光层的另一部分上的电流扩散层; 形成在电流扩展层上的前电极; 以及形成在半导体基板的后侧的后电极。电流阻挡层由中心区域和外部区域构成，该区域通过电流扩展层的一部分围绕中心区域，使得出现在器件的前表面上的发光区域具有环形形状。电流阻挡层的前电极和中心区域彼此相对。

2. 发明授权

US06849473B2 Semiconductor light-emitting device and method for manufacturing thereof 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US06849473B2
公开(公告)日：2005-02-01
申请号：US10253609
申请日：2002-09-25
申请人： Kazuaki Sasaki , Junichi Nakamura , Shouichi Ohyama
发明人： Kazuaki Sasaki , Junichi Nakamura , Shouichi Ohyama
IPC分类号： H01L33/14 , H01L33/30 , H01L33/38 , H01L21/00
CPC分类号： H01L33/145 , H01L33/14 , H01L33/30
摘要： In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is formed under the n-GaAs substrate, and a second electrode is formed on the grown-layer side. In this process, a region of the p-intermediate band gap layer just under the second electrode is removed, the p-current diffusion layer is stacked in the removal region on the p-cladding layer, and a junction plane of the p-current diffusion layer and the p-cladding layer becomes high in resistance due to an energy band structure of type II. This semiconductor light-emitting device is capable of reducing ineffective currents with a simple construction and taking out light effectively to outside, thus enhancing the emission intensity.
摘要翻译：在半导体发光器件中，在n-GaAs衬底上堆叠n-GaAs缓冲层，n包层，未掺杂有源层，p包层，p中间带隙层和p 电流扩散层。此外，在n-GaAs衬底下形成第一电极，在生长层侧形成第二电极。在该工序中，除去刚好在第二电极正下方的p中间带隙层的区域，p电流扩散层层叠在p包覆层的去除区域中，p电流的结面由于II型能带结构，扩散层和p型包层的电阻变高。该半导体发光装置能够以简单的结构减少无效电流，并且有效地将光量外部引出，从而提高发光强度。

3. 发明授权

US06399965B2 Semiconductor light emitting device with high yield and low power consumption 有权
标题翻译：半导体发光器件，产量高，功耗低
公开(公告)号：US06399965B2
公开(公告)日：2002-06-04
申请号：US09757689
申请日：2001-01-11
申请人： Junichi Nakamura , Kazuaki Sasaki , Shouichi Ohyama
发明人： Junichi Nakamura , Kazuaki Sasaki , Shouichi Ohyama
IPC分类号： H01L3300
CPC分类号： H01L33/12 , H01L33/02
摘要： There is provided a semiconductor light emitting device having improved adhesion of an electrode by reducing defects in a crystal surface. An n-type AlGaInP lower clad layer 12, an AlGaInP active layer 13, a p-type AlGaInP upper clad layer 14, a p-type AlGaInP intermediate layer 15 whose lattice matching rate &Dgr;a/a with GaAs is −3.3%, a p-type AlGaInP current diffusion layer 16 and a p-type electrode 17 are laminated on an n-type GaAs substrate 11 and an n-type electrode 18 is provided on the n-type GaAs substrate 11. Thus, the number of crystal defects in the crystal surface can be reduced to 20 or less per one LED by setting the value of the lattice matching rate &Dgr;a/a of the intermediate layer 15 to be −3.3%, which is lower than −2.5%. As a result, adhesion of the p-type electrode 17 formed on the current diffusion layer 16 is improved and thereby the yield of LED can be enhanced.
摘要翻译：通过减少晶体表面的缺陷，提供了具有改善的电极附着力的半导体发光器件。 n型AlGaInP下包层12，AlGaInP有源层13，p型AlGaInP上覆层14，与GaAs的晶格匹配率DELTAa / a为-3.3％的p型AlGaInP中间层15，p 型AlGaInP电流扩散层16和p型电极17层叠在n型GaAs衬底11上，并且n型电极18设置在n型GaAs衬底11上。因此，晶体缺陷的数量通过将中间层15的晶格匹配率DELTAa / a的值设定为-3.3％，低于-2.5％，每个LED的晶体面可以减少到20以下。结果，形成在电流扩散层16上的p型电极17的粘附性提高，从而可以提高LED的产量。

4. 发明授权

US07531370B2 Light-emitting diode and its manufacturing method 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07531370B2
公开(公告)日：2009-05-12
申请号：US11256001
申请日：2005-10-24
申请人： Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L33/14 , Y10S438/937
摘要： It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.
摘要翻译：本发明的目的是提供具有AlGaInP型发光部分的发光二极管，并且在发光部分的发光侧具有包括In的电流扩散层，从而产生小丘被有效地抑制，并且发光二极管的亮度增加。

5. 发明授权

US07247985B2 Semiconductor light-emitting device having annular shape light emitting region and current blocking layer 有权
标题翻译：具有环形发光区域和电流阻挡层的半导体发光器件
公开(公告)号：US07247985B2
公开(公告)日：2007-07-24
申请号：US10969015
申请日：2004-10-21
申请人： Kazuaki Kaneko , Hiroshi Umeda , Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Kaneko , Hiroshi Umeda , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01J1/62
CPC分类号： H01L33/145 , H01L2224/48463 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor light-emitting device includes: a semiconductor substrate; a light-emitting layer formed on the semiconductor substrate; a current-blocking layer formed on a part of the light-emitting layer for restricting light-emission; a current-spreading layer formed on the current-blocking layer and the other part of the light-emitting layer; a front electrode formed on the current-spreading layer; and a rear electrode formed on a rear side of the semiconductor substrate. The current-blocking layer is composed of a central region and an outer region which surrounds the central region via a part of the current-spreading layer, so that a light-emitting region that appears on a front surface of the device has an annular shape. The front electrode and the central region of the current-blocking layer are opposed to each other.
摘要翻译：半导体发光器件包括：半导体衬底; 形成在所述半导体基板上的发光层; 形成在用于限制发光的发光层的一部分上的电流阻挡层; 形成在电流阻挡层和发光层的另一部分上的电流扩散层; 形成在电流扩展层上的前电极; 以及形成在半导体基板的后侧的后电极。电流阻挡层由中心区域和外部区域构成，该区域通过电流扩展层的一部分围绕中心区域，使得出现在器件的前表面上的发光区域具有环形形状。电流阻挡层的前电极和中心区域彼此相对。

6. 发明授权

US06465812B1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06465812B1
公开(公告)日：2002-10-15
申请号：US09671777
申请日：2000-09-27
申请人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
发明人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L3300
CPC分类号： H01L33/16 , H01L33/30 , H01S5/3202
摘要： A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of AlaGatIn1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.
摘要翻译：本发明的半导体发光器件至少包括：主面从[011]取向的（100）面倾斜的GaAs衬底; 设置在GaAs衬底的主平面上的Al x Ga 1-x As（0 <= x <= 1）的第一缓冲层; 设置在第一缓冲层上的AlyGaxIn1-y-zP（0 <= y <= 1和0 <= z <= 1）的第二缓冲层; 提供在第二缓冲层上的AlaGatIn1-a-tP（0≤s≤1且0 <= t <= 1）的第一包层; 设置在所述第一包层上的有源层; 以及设置在所述有源层上的第二覆层，其中所述第一包层的Al含量s大于所述第二缓冲层的Al含量y。

7. 发明授权

US07049212B2 Method for producing III-IV group compound semiconductor layer, method for producing semiconductor light emitting element, and vapor phase growing apparatus 有权
标题翻译： III-IV族化合物半导体层的制造方法，半导体发光元件的制造方法以及气相生长装置
公开(公告)号：US07049212B2
公开(公告)日：2006-05-23
申请号：US10753290
申请日：2004-01-07
申请人： Junichi Nakamura , Kazuaki Sasaki
发明人： Junichi Nakamura , Kazuaki Sasaki
IPC分类号： H01L21/44
CPC分类号： H01L21/02502 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A method for producing a III-V group compound semiconductor layer comprises the steps of: forming a first III-V group compound semiconductor layer on a substrate in a reaction chamber; and supplying a III group material gas to the reaction chamber before or after the step of forming the first III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber.
摘要翻译：一种制备III-V族化合物半导体层的方法包括以下步骤：在反应室中的基底上形成第一III-V族化合物半导体层; 以及在形成第一III-V族化合物半导体层的步骤之前或之后将III族原料气体供应至反应室，以防止III族气体在反应室中再蒸发。

8. 发明授权

US07005682B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US07005682B2
公开(公告)日：2006-02-28
申请号：US10766606
申请日：2004-01-27
申请人： Kiyohisa Ohta , Hiroshi Nakatsu , Kazuaki Sasaki , Junichi Nakamura
发明人： Kiyohisa Ohta , Hiroshi Nakatsu , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/305
摘要： A semiconductor light emitting element of a monolithic structure, including: a first-conductivity-type semiconductor substrate; an active layer formed on the first-conductivity-type semiconductor substrate; a second-conductivity-type clad layer formed on the active layer; and a current diffusion layer formed on the second-conductivity-type clad layer, wherein the active layer is of a first conductivity type.
摘要翻译：一种单片结构的半导体发光元件，包括：第一导电型半导体衬底; 形成在所述第一导电型半导体基板上的有源层; 形成在有源层上的第二导电型覆盖层; 以及形成在所述第二导电型覆盖层上的电流扩散层，其中所述有源层是第一导电类型。

9. 发明授权

US06476421B2 Semiconductor light-emitting device and method for manufacturing thereof 有权
公开(公告)号：US06476421B2
公开(公告)日：2002-11-05
申请号：US09838592
申请日：2001-04-20
申请人： Kazuaki Sasaki , Junichi Nakamura , Shouichi Ohyama
发明人： Kazuaki Sasaki , Junichi Nakamura , Shouichi Ohyama
IPC分类号： H01L3300
CPC分类号： H01L33/145 , H01L33/14 , H01L33/30
摘要： In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is formed under the n-GaAs substrate, and a second electrode is formed on the grown-layer side. In this process, a region of the p-intermediate band gap layer just under the second electrode is removed, the p-current diffusion layer is stacked in the removal region on the p-cladding layer, and a junction plane of the p-current diffusion layer and the p-cladding layer becomes high in resistance due to an energy band structure of type II. This semiconductor light-emitting device is capable of reducing ineffective currents with a simple construction and taking out light effectively to outside, thus enhancing the emission intensity.

10. 发明授权

US06468818B2 Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage 有权
标题翻译：一种能够以低电压工作的高亮度半导体发光装置的制造方法
公开(公告)号：US06468818B2
公开(公告)日：2002-10-22
申请号：US09490534
申请日：2000-01-25
申请人： Junichi Nakamura , Hiroshi Nakatsu , Kazuaki Sasaki
发明人： Junichi Nakamura , Hiroshi Nakatsu , Kazuaki Sasaki
IPC分类号： H01L2100
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/14 , Y10S438/936 , Y10S438/956
摘要： A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section. When growing the current diffusion layer from a crystal interface on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor &Dgr;a/a is not lower than 0.25% with respect to the upper clad layer at a crystal interface where the crystal composition changes on the upper clad layer of the light-emitting section, the growth rate at least at the start time of growth is made to be 1.0 &mgr;m/h or less.
摘要翻译：半导体发光器件具有至少包含形成在化合物半导体衬底上的下覆盖层，有源层和上覆盖层的发光部分和在发光元件的上覆盖层上生长的层，发射部分。当晶格匹配因子DELTAa / a的绝对值相对于晶体界面处的上包层不低于0.25％的晶格失配状态从上覆盖层上的晶体界面生长电流扩散层时其中晶体组成在发光部分的上包覆层上变化，至少在生长开始时的生长速率为1.0mum / h以下。

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