专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070023772A1 Semiconductor light-emitting device and method of manufacturing same 审中-公开
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20070023772A1
公开(公告)日：2007-02-01
申请号：US11492045
申请日：2006-07-25
申请人： Nobuyuki Watanabe , Yukari Inoguchi , Tetsuroh Murakami
发明人： Nobuyuki Watanabe , Yukari Inoguchi , Tetsuroh Murakami
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/025
摘要： A semiconductor light-emitting device has a first conductivity type semiconductor layer (3, 4), a luminous layer (5) formed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer (8) formed on the luminous layer, and a transmissive substrate (9) which is formed on the second conductivity type semiconductor layer (8) and is pervious to light coming from the luminous layer (5). The transmissive substrate (9) has a carrier concentration lower than that of the second conductivity type semiconductor layer (8).
摘要翻译：半导体发光器件具有第一导电型半导体层（3,4），形成在第一导电型半导体层上的发光层（5），形成在发光层上的第二导电型半导体层（8），以及形成在第二导电型半导体层（8）上并透过来自发光层（5）的光的透射基板（9）。透射基板（9）的载流子浓度低于第二导电型半导体层（8）的载流子浓度。

2. 发明申请

US20050012456A1 Method of manufacturing a semiconductor light-emitting device 有权
标题翻译：制造半导体发光装置的方法
公开(公告)号：US20050012456A1
公开(公告)日：2005-01-20
申请号：US10919270
申请日：2004-08-17
申请人： Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Shouichi Ooyama
发明人： Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Shouichi Ooyama
IPC分类号： H01L33/62 , H01L21/316 , H01L33/00 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/30 , H01L33/56 , H01J1/62
CPC分类号： H01L33/145 , H01L33/0095 , H01L33/10 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlxGa1-xAs layer and the active layer, in this order. Part of the AlxGa1-xAs layer with respect to the is changed into an AlOy layer (where y is a positive real number).
摘要翻译：半导体发光器件即使具有较少数量的光反射层也呈现高反射率，并且允许从有源层发射的光被有效地提取到外部。该半导体发光器件通过半导体发光器件制造方法以高质量的生产率制造，该半导体发光器件制造方法包括以下步骤：在半导体衬底上提供产生具有特定波长的光的有源层。在半导体衬底上依次层叠Al x Ga 1-x As层和有源层。相对于Al x Ga 1-x As层的一部分被改变为AlOy层（其中y是正实数）。

3. 发明授权

US06770915B2 Light emitting element with multiple multi-layer reflectors and a barrier layers 失效
标题翻译：具有多个多层反射器和阻挡层的发光元件
公开(公告)号：US06770915B2
公开(公告)日：2004-08-03
申请号：US10417193
申请日：2003-04-17
申请人： Tetsuroh Murakami , Takahisa Kurahashi , Shouichi Ohyama , Hiroshi Nakatsu
发明人： Tetsuroh Murakami , Takahisa Kurahashi , Shouichi Ohyama , Hiroshi Nakatsu
IPC分类号： H01L3300
CPC分类号： H01L33/105
摘要： In a semiconductor light-emitting element, a first DBR and a second DBR, with a specified spacing left between them, form a resonator, and a single quantum well active layer is positioned at the loop of a standing wave within this resonator. The single quantum well active layer is composed of a Ga0.5In0.5P well layer and a pair of (Al0.5Ga0.5)0.5In0.5P barrier layers, which sandwiches the Ga0.5In0.5P well layer therebetween. The impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is higher than that of the Ga0.5In0.5P well layer. For example, the impurity concentration of the Ga0.5In0.5P well layer is set to 2×1016 cm−3, while the impurity concentration of the (Al0.5Ga0.5)0.5In0.5P barrier layers is set to 2×1018 cm−3.
摘要翻译：在半导体发光元件中，在它们之间留有规定间隔的第一DBR和第二DBR形成谐振器，并且单个量子阱有源层位于该谐振器内的驻波环路处。单量子阱有源层由Ga0.5In0.5P阱层和一对（Al0.5Ga0.5）0.5In0.5P势垒层组成，它们之间夹着Ga0.5In0.5P阱层。（Al0.5Ga0.5）0.5In0.5P阻挡层的杂质浓度高于Ga0.5In0.5P阱层的杂质浓度。例如，Ga0.5In0.5P阱层的杂质浓度设定为2×10 16 cm -3，而（Al 0.5 Ga 0.5）0.5 In 0.5 P阻挡层的杂质浓度设定为 2×10 18 cm -3。

4. 发明授权

US06265732B1 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US06265732B1
公开(公告)日：2001-07-24
申请号：US09452057
申请日：1999-11-30
申请人： Hiroshi Nakatsu , Tetsuroh Murakami , Hiroyuki Hosoba , Takahisa Kurahashi
发明人： Hiroshi Nakatsu , Tetsuroh Murakami , Hiroyuki Hosoba , Takahisa Kurahashi
IPC分类号： H01L2715
CPC分类号： H01L33/30 , H01L33/0025
摘要： A light emitting diode includes a substrate, a light emitting layer, a first cladding layer having a first conductivity type and an energy gap greater than an energy gap of the light emitting layer, a second cladding layer having a second conductivity type and an energy gap greater than an energy gap of the light emitting layer, and an intermediate barrier layer having the same conductivity type as the conductivity type of the light emitting layer but different from the conductivity type of the first or second cladding layer, and having an energy gap less than the energy gap of the first or second cladding layer but greater than the energy gap of the light emitting layer. The light emitting diode has a double heterostructure such that the light emitting layer is interposed between the first and second cladding layer. The intermediate barrier layer is disposed between the light emitting layer and the first cladding layer and/or between the light emitting layer and the second cladding layer.
摘要翻译：发光二极管包括基板，发光层，具有第一导电类型的第一包层和大于发光层的能隙的能隙;第二覆层，具有第二导电类型和能隙大于发光层的能隙，以及具有与发光层的导电类型相同的导电类型但不同于第一或第二包层的导电类型的导电类型的中间阻挡层，并且具有较小的能隙比第一或第二包层的能隙大，但大于发光层的能隙。发光二极管具有双重异质结构，使得发光层介于第一和第二包覆层之间。中间阻挡层设置在发光层和第一包层之间和/或在发光层和第二包层之间。

5. 发明申请

US20070194296A1 Light emitting diode and manufacturing method therefor 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20070194296A1
公开(公告)日：2007-08-23
申请号：US11709150
申请日：2007-02-22
申请人： Tetsuroh Murakami , Yukari Inoguchi , Nobuyuki Watanabe , Taeko Chiba
发明人： Tetsuroh Murakami , Yukari Inoguchi , Nobuyuki Watanabe , Taeko Chiba
IPC分类号： H01L29/06
CPC分类号： H01L33/22 , H01L33/30
摘要： A light emitting diode is composed of a p-type GaP substrate 12 and layers laminated on the p-type GaP substrate 12, including a p-type GaP contact layer 13, a p-type AlInP second cladding layer 14, a p-type AlGaInP active layer 15, an n-type AlInP first cladding layer 16 and an n-type AlGaAs current diffusion layer 17. The entire lateral surfaces of the p-type GaP substrate 12 are processed into a roughened state by a dicing blade. The light emitting diode has high light intensity and its surface can be roughened under any circumstances regardless of its material and orientation so that characteristic failures can be prevented from occurring.
摘要翻译：发光二极管由p型GaP基板12和层叠在p型GaP基板12上的层构成，包括p型GaP接触层13，p型AlInP第二包覆层14，p型 AlGaInP有源层15，n型AlInP第一包层16和n型AlGaAs电流扩散层17。 p型GaP基板12的整个侧表面由切割刀片加工成粗糙状态。发光二极管具有高的光强度，并且在任何情况下，其表面可以粗糙化，而不管其材料和取向如何，从而可以防止发生特性故障。

6. 发明授权

US06465812B1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06465812B1
公开(公告)日：2002-10-15
申请号：US09671777
申请日：2000-09-27
申请人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
发明人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L3300
CPC分类号： H01L33/16 , H01L33/30 , H01S5/3202
摘要： A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of AlaGatIn1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.
摘要翻译：本发明的半导体发光器件至少包括：主面从[011]取向的（100）面倾斜的GaAs衬底; 设置在GaAs衬底的主平面上的Al x Ga 1-x As（0 <= x <= 1）的第一缓冲层; 设置在第一缓冲层上的AlyGaxIn1-y-zP（0 <= y <= 1和0 <= z <= 1）的第二缓冲层; 提供在第二缓冲层上的AlaGatIn1-a-tP（0≤s≤1且0 <= t <= 1）的第一包层; 设置在所述第一包层上的有源层; 以及设置在所述有源层上的第二覆层，其中所述第一包层的Al含量s大于所述第二缓冲层的Al含量y。

7. 发明申请

US20070252158A1 Semiconductor light-emitting device and method of manufacturing the same 审中-公开
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20070252158A1
公开(公告)日：2007-11-01
申请号：US11790595
申请日：2007-04-26
申请人： Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami , Taeko Chiba
发明人： Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami , Taeko Chiba
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/025
摘要： A semiconductor light-emitting device has a first conductivity type semiconductor layer, a luminous layer formed on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer formed on the luminous layer, and a transmissive semiconductor layer formed on the second conductivity type semiconductor layer. The transmissive semiconductor layer is pervious to light coming from the luminous layer. The second conductivity type semiconductor layer and the transmissive semiconductor layer have different carrier concentrations, and the carrier concentration of the second conductivity type semiconductor layer is higher than the carrier concentration of the transmissive semiconductor layer.
摘要翻译：半导体发光器件具有第一导电类型半导体层，形成在第一导电类型半导体层上的发光层，形成在发光层上的第二导电类型半导体层和形成在第二导电类型半导体上的透射半导体层层。透射半导体层可透过来自发光层的光。第二导电型半导体层和透射半导体层具有不同的载流子浓度，第二导电型半导体层的载流子浓度高于透射半导体层的载流子浓度。

8. 发明授权

US07285436B2 Method of manufacturing a semiconductor light-emitting device 有权
标题翻译：制造半导体发光装置的方法
公开(公告)号：US07285436B2
公开(公告)日：2007-10-23
申请号：US10919270
申请日：2004-08-17
申请人： Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Shouichi Ooyama
发明人： Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Shouichi Ooyama
IPC分类号： H01L33/62 , H01L21/316 , H01L33/00 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/30 , H01L33/56
CPC分类号： H01L33/145 , H01L33/0095 , H01L33/10 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlxGa1-xAs layer and the active layer, in this order. Part of the AlxGa1-xAs layer with respect to the is changed into an AlOy layer (where y is a positive real number).
摘要翻译：半导体发光器件即使具有较少数量的光反射层也呈现高反射率，并且允许从有源层发射的光被有效地提取到外部。该半导体发光器件通过半导体发光器件制造方法以高质量的生产率制造，该半导体发光器件制造方法包括以下步骤：在半导体衬底上提供产生具有特定波长的光的有源层。在半导体衬底上依次堆叠Al x Ga 1-x As As层和有源层。相对于Al的一部分Al x Ga 1-x O As层被改变为AlO层（其中y是正实的数）。

9. 发明申请

US20070007543A1 Semiconductor light emitting device and manufacturing method therefor 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20070007543A1
公开(公告)日：2007-01-11
申请号：US11477654
申请日：2006-06-30
申请人： Eiji Kametani , Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami
发明人： Eiji Kametani , Yukari Inoguchi , Nobuyuki Watanabe , Tetsuroh Murakami
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/16 , H01L33/0079
摘要： A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned with each other and are in the range of −15° to +15° with respect to a lateral face {100} of the second wafer 23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.
摘要翻译：本发明的半导体发光器件通过层叠包含AlGaInP有源层的外延层30和透射从有源层衍生的光的第二晶片23而形成。外延层30和第二晶片23的晶轴大致相互对准，并且相对于第二晶片23的侧面{100}在-15°至+ 15°的范围内。该半导体光作为具有高外部发光效率的接合型发光器件，可以容易且高产率地在整个晶片面上实现均匀的晶片接合，而不会引起接合故障和晶片裂纹。

10. 发明申请

US20060094140A1 Manufacturing method for semiconductor light emitting device 审中-公开
标题翻译：半导体发光元件的制造方法
公开(公告)号：US20060094140A1
公开(公告)日：2006-05-04
申请号：US11261557
申请日：2005-10-31
申请人： Yukari Inoguchi , Hiroshi Umeda , Takahisa Kurahashi , Nobuyuki Watanabe , Tetsuroh Murakami
发明人： Yukari Inoguchi , Hiroshi Umeda , Takahisa Kurahashi , Nobuyuki Watanabe , Tetsuroh Murakami
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L33/0079
摘要： A manufacturing method for a semiconductor light emitting device is provided. The method includes preparing a first wafer in which at least one semiconductor layer including the emitter layer is formed; disposing a second wafer transparent to an emission wavelength of the emitter layer on the surface of the first wafer; providing a bonding failure prevention structure to at least either the first wafer or the second wafer for preventing bonding failures of the first wafer and the second wafer; and applying compressive force to a contact face between the first wafer and the second wafer while at the same time, heating the contact face. The first and second wafers can be bonded across their entire surfaces without causing bonding failure.
摘要翻译：提供了一种用于半导体发光器件的制造方法。该方法包括制备其中形成包括发射极层的至少一个半导体层的第一晶片; 将第二晶片设置在第一晶片的表面上对发射层的发射波长透明; 为所述第一晶片或所述第二晶片中的至少任一个提供接合故障防止结构，以防止所述第一晶片和所述第二晶片的接合故障; 并且在同时对第一晶片和第二晶片之间的接触面施加压力，同时加热接触面。第一和第二晶片可以在其整个表面上结合，而不会引起接合故障。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式