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1. 发明授权

US08536017B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08536017B2
公开(公告)日：2013-09-17
申请号：US13363312
申请日：2012-01-31
申请人： Masaru Kadoshima , Hiroshi Umeda , Tatsunori Kaneoka , Katsuyuki Horita
发明人： Masaru Kadoshima , Hiroshi Umeda , Tatsunori Kaneoka , Katsuyuki Horita
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： A polysilazane film is formed over the main surface of a semiconductor substrate in such a manner that the upper surface level of the polysilazane film buried in a trench of 0.2 μm or less in width becomes higher than that of a pad insulating film and the upper surface level of the polysilazane film buried in a trench of 1.0 μm or more in width becomes lower than that of the pad insulating film. Then, heat treatment is conducted at 300° C. or more to convert the polysilazane film into a first buried film made of silicon oxide (SiO2) and remove a void in the upper portion of the narrower trench.
摘要翻译：在半导体衬底的主表面上形成聚硅氮烷膜，使得埋在宽度为0.2μm或更小的沟槽中的聚硅氮烷膜的上表面水平高于衬垫绝缘膜的上表面水平，埋入宽度为1.0μm以上的沟槽中的聚硅氮烷膜的水平比焊垫绝缘膜低。然后，在300℃以上进行热处理，将聚硅氮烷膜转换为由氧化硅（SiO 2）构成的第一掩埋膜，并且在较窄的沟槽的上部除去空隙。

2. 发明授权

US06675866B2 System for monitoring molding machine and hydrostatic molding machine 有权
标题翻译：成型机和静液压成型机监控系统
公开(公告)号：US06675866B2
公开(公告)日：2004-01-13
申请号：US10009642
申请日：2001-12-12
申请人： Hironobu Amano , Yasuo Moribe , Hiroshi Umeda , Mitsuyuki Matsushita
发明人： Hironobu Amano , Yasuo Moribe , Hiroshi Umeda , Mitsuyuki Matsushita
IPC分类号： B22D1732
CPC分类号： B22C15/28 , B22C15/24 , B22C19/04
摘要： To provide a monitoring system for remotely monitoring the operation of a molding apparatus or an air-flow and press molding apparatus. The monitoring systems for monitoring a molding apparatus and an air-flow and press molding apparatus include sensors, a local unit, and a remote unit. The local unit transmits the signals associated with the required attributes, which are measured by the sensors, of the molding apparatus to the remote unit via the communication network. The remote unit is designed so that it receives the signals transmitted from the local unit; thereby the user can monitor the molding apparatus or the air-flow and press molding apparatus remotely at the production and operation by them.
摘要翻译：提供用于远程监视模制设备或气流和压制成型设备的操作的监控系统。用于监测成型设备和空气流动和压制成型设备的监控系统包括传感器，本地单元和远程单元。本地单元经由通信网络将与成型设备所测量的所需属性相关联的信号传送到远程单元。遥控单元被设计成接收从本地单元发送的信号; 从而用户可以在生产和操作时远程监控成型设备或气流和压模设备。

3. 发明授权

US06521509B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US06521509B2
公开(公告)日：2003-02-18
申请号：US09887322
申请日：2001-06-25
申请人： Akinobu Teramoto , Kousuke Yagi , Hiroshi Umeda
发明人： Akinobu Teramoto , Kousuke Yagi , Hiroshi Umeda
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： A highly reliable semiconductor device is provided. A silicon nitride film having an opening is formed on a main surface of a silicon substrate. The opening is formed with a side surface. The silicon substrate is etched using the silicon nitride film as a mask to form a trench. The side surface of the silicon nitride film is altered in quality to form a silicon oxide film. A silicon oxide film filling the trench is formed in contact with the silicon oxide film. The silicon nitride film is removed with the silicon oxide film in contact with the silicon oxide film remaining.

4. 发明授权

US06349127B1 Pulley and CT scanner 有权
标题翻译：皮带轮和CT扫描仪
公开(公告)号：US06349127B1
公开(公告)日：2002-02-19
申请号：US09157355
申请日：1998-09-19
申请人： Hiroshi Umeda
发明人： Hiroshi Umeda
IPC分类号： A61B603
CPC分类号： A61B6/035 , F16H55/42 , F16H55/46
摘要： With a view of facilitating the manufacture and reducing the cost, a pulley according to the present invention comprises an annular portion 100 formed by laminating rings 110, 120 and 130 and a tooth portion formed along a circumferential surface of the annular portion 100, the tooth portion comprising a plurality of resin teeth having blades formed on the side opposite to the side which is opposed to the circumferential surface of the annular portion. The rings 110, 120 and 130 are divided into a plurality of arcuate plates 111, 112, 113, 121, 122, 123, 131, 132 and 133.
摘要翻译：为了便于制造和降低成本，根据本发明的滑轮包括通过层叠环110,120和130而形成的环形部分100和沿着环形部分100的圆周表面形成的齿部分，齿部部分包括多个树脂齿，所述树脂齿具有形成在与所述环形部分的周向表面相对的一侧相反侧的叶片。环110,120和130被分成多个弧形板111,112,113,121,122,123,131,132和133。

5. 发明申请

US20130155347A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20130155347A1
公开(公告)日：2013-06-20
申请号：US13714196
申请日：2012-12-13
申请人： Koji YONEMURA , Hiroshi UMEDA
发明人： Koji YONEMURA , Hiroshi UMEDA
IPC分类号： G02F1/1339 , G02F1/1333
CPC分类号： G02F1/1339 , G02F1/133308 , G02F1/13394 , G02F2001/13396
摘要： A liquid crystal display device includes: a display panel which includes a TFT array substrate and a CF substrate arranged as opposed to each other, and a liquid crystal held therebetween; and a front panel which is adhered to a front surface side of the display panel with a resin layer interposed therebetween. A display region of the display panel is provided with main spacers formed on the CF substrate and making contact with the TFT array substrate, and sub-spacers formed on the CF substrate and not reaching the TFT array substrate. A ratio of a total contact area of the main spacers and the TFT array substrate with respect to an area of the display region of the liquid crystal panel is equal to or smaller than 0.02%.
摘要翻译：液晶显示装置包括：显示面板，其包括彼此相对布置的TFT阵列基板和CF基板以及夹在其间的液晶; 以及前面板，其中插入有树脂层粘附到显示面板的前表面侧。显示面板的显示区域设置有形成在CF基板上并与TFT阵列基板接触的主间隔物，以及形成在CF基板上并且未到达TFT阵列基板的子间隔物。主间隔物和TFT阵列基板的总接触面积相对于液晶面板的显示区域的面积的比例为0.02％以下。

6. 发明授权

US07863125B2 Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device 有权
标题翻译： CMOS型半导体器件的制造方法以及CMOS型半导体器件
公开(公告)号：US07863125B2
公开(公告)日：2011-01-04
申请号：US12492648
申请日：2009-06-26
申请人： Shimpei Tsujikawa , Yasuhiko Akamatsu , Hiroshi Umeda , Jiro Yugami , Masaharu Mizutani , Masao Inoue , Junichi Tsuchimoto , Kouji Nomura
发明人： Shimpei Tsujikawa , Yasuhiko Akamatsu , Hiroshi Umeda , Jiro Yugami , Masaharu Mizutani , Masao Inoue , Junichi Tsuchimoto , Kouji Nomura
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857
摘要： The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.
摘要翻译：在这种CMOS型半导体器件的制造方法中，能够抑制在栅极电极中含有硼的情况下，从pMOS晶体管的栅电极到半导体衬底的硼渗透，同时能够提高pMOS的NBTI寿命提供了晶体管，而不降低nMOS晶体管的性能。关于本发明的CMOS型半导体器件的制造方法具有以下工序。卤素引入pMOS晶体管形成区域的半导体衬底。接下来，在pMOS晶体管形成区域的半导体衬底上形成栅极绝缘膜。接下来，将氮引入到栅极绝缘膜。

7. 发明申请

US20070052342A1 Light-emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：US20070052342A1
公开(公告)日：2007-03-08
申请号：US11515512
申请日：2006-08-31
申请人： Masatsugu Masuda , Masaaki Katoh , Kazuhiko Inoguchi , Hiroshi Umeda , Yuhichi Memida , Takashi Oouchida , Yuhsuke Fujita , Masatoshi Omoto
发明人： Masatsugu Masuda , Masaaki Katoh , Kazuhiko Inoguchi , Hiroshi Umeda , Yuhichi Memida , Takashi Oouchida , Yuhsuke Fujita , Masatoshi Omoto
IPC分类号： H01J1/62
CPC分类号： C09K11/7774 , C09K11/0883 , C09K11/7734 , H05B33/14 , Y02B20/181
摘要： A light-emitting device includes a light-emitting element emitting primary light and a wavelength conversion portion absorbing a part of the primary light and emitting secondary light having a wavelength equal to or longer than the wavelength of the primary light. The wavelength conversion portion includes a plurality of green or yellow light-emitting phosphors and a plurality of red light-emitting phosphors. The green or yellow light-emitting phosphor is implemented by at least one selected from a specific europium (II)-activated silicate phosphor (A-1) and a specific cerium (III)-activated silicate phosphor (A-2). The red light-emitting phosphor is implemented by a specific europium (II)-activated nitride phosphor (B). The light-emitting device emitting white light at efficiency and color rendering property higher than in a conventional example can thus be provided.
摘要翻译：发光装置包括发射原色光的发光元件和吸收一次光的一部分的波长转换部分，并且发射具有等于或大于初级光的波长的波长的二次光。波长转换部分包括多个绿色或黄色发光荧光体和多个红色发光荧光体。绿色或黄色的发光荧光体由选自特定的铕（II）活化的硅酸盐荧光体（A-1）和特定的铈（III）活化的硅酸盐荧光体（A-2）中的至少一种来实现。红色发光荧光体由特定的铕（II）活化氮化物荧光体（B）实现。因此，可以提供比现有例更高效率和显色性发光白光的发光装置。

8. 发明授权

US06883582B2 Moniroting system for molding apparatus and monitoring system for air-flow and press molding apparatus 有权
标题翻译：空气流动和压力成型设备成型设备和监控系统的旋转系统
公开(公告)号：US06883582B2
公开(公告)日：2005-04-26
申请号：US10721087
申请日：2003-11-26
申请人： Hironobu Amano , Yasuo Moribe , Hiroshi Umeda , Mitsuyuki Matsushita
发明人： Hironobu Amano , Yasuo Moribe , Hiroshi Umeda , Mitsuyuki Matsushita
IPC分类号： B22C15/24 , B22C15/28 , B22C19/04 , B22D17/32
CPC分类号： B22C15/28 , B22C15/24 , B22C19/04
摘要： To provide a monitoring system for remotely monitoring the operation of a molding apparatus or an air-flow and press molding apparatus. The monitoring systems for monitoring a molding apparatus and an airflow and press molding apparatus include sensors, a local unit, and a remote unit. The local unit transmits the signals associated with the required attributes, which are measured by the sensors, of the molding apparatus to the remote unit via the communication network. The remote unit is designed so that it receives the signals transmitted from the local unit; thereby the user can monitor the molding apparatus or the air-flow and press molding apparatus remotely at the production and operation by them.
摘要翻译：提供用于远程监视模制设备或气流和压制成型设备的操作的监控系统。用于监测模制设备和气流和压制成型设备的监控系统包括传感器，本地单元和远程单元。本地单元经由通信网络将与成型设备所测量的所需属性相关联的信号传送到远程单元。遥控单元被设计成接收从本地单元发送的信号; 从而用户可以在生产和操作时远程监控成型设备或气流和压模设备。

9. 发明授权

US06683004B1 Method of manufacturing a semiconductor device, and semiconductor device manufactured thereby 有权
标题翻译：制造半导体器件的方法和由此制造的半导体器件
公开(公告)号：US06683004B1
公开(公告)日：2004-01-27
申请号：US09614210
申请日：2000-07-11
申请人： Masao Inoue , Akinobu Teramoto , Hiroshi Umeda
发明人： Masao Inoue , Akinobu Teramoto , Hiroshi Umeda
IPC分类号： H01L2100
CPC分类号： H01L21/76224
摘要： There is described prevention of an increase in the thickness of an oxide film of a silicon wafer, which would otherwise be caused by eruption of gas from a CVD oxide film of another wafer during the course of a high-temperature annealing operation. A semiconductor device, which has a silicon substrate and trench isolation structures for isolating a plurality of active regions from one another, is manufactured by the steps as follows. A first and a second dielectric films are formed on the silicon substrate of one of the conductivity types. The dielectric films are removed from the areas of the silicon substrate where the trench structures are to be formed. The trench structures are formed in the uncovered areas of the silicon substrate to a predetermined depth. An oxide film is deposited into the respective trench structures by means of CVD after the oxide film has been deposited on the interior surface of the respective trench structure. The surface of the deposited oxide film is smoothed by means of removing the deposited oxide film from the silicon substrate through use of chemical-and-mechanical polishing. The second dielectric film is removed and the first dielectric film remains on the areas of the silicon substrate which are to become active regions. Then, the wafer is annealed in inactive gas at a temperature of 900° C. or less.
摘要翻译：描述了防止硅晶片氧化膜厚度增加的原因，否则这是因为在高温退火操作过程中来自另一晶片的CVD氧化膜的气体的喷发引起的。通过以下步骤制造具有硅衬底和用于将多个有源区彼此隔离的沟槽隔离结构的半导体器件。在导电类型之一的硅衬底上形成第一和第二电介质膜。从硅衬底的要形成沟槽结构的区域去除电介质膜。沟槽结构形成在硅衬底的未覆盖区域中至预定深度。在氧化膜沉积在相应的沟槽结构的内表面上之后，通过CVD将氧化物膜沉积到相应的沟槽结构中。通过使用化学和机械抛光，通过从硅衬底去除沉积的氧化膜来平滑沉积的氧化物膜的表面。去除第二电介质膜，并且第一电介质膜保留在将成为有源区的硅衬底的区域上。然后，在900℃以下的温度下，将该晶片在惰性气体中退火。

10. 发明授权

US06252296B1 Semiconductor device with silicon oxynitride gate insulating film 有权
标题翻译：半导体器件采用氮氧化硅栅极绝缘膜
公开(公告)号：US06252296B1
公开(公告)日：2001-06-26
申请号：US09270054
申请日：1999-03-16
申请人： Hiroshi Umeda , Hiroaki Tamura
发明人： Hiroshi Umeda , Hiroaki Tamura
IPC分类号： H01L2358
CPC分类号： H01L21/28202 , H01L21/28185 , H01L21/3144 , H01L29/518
摘要： A semiconductor device is formed with a silicon oxynitride gate insulating film to exhibit high TDDB characteristics. The silicon oxynitride film is formed on a silicon substrate and does not include an SiNO2 chemical bond unit at any portion in the film thickness direction.
摘要翻译：半导体器件由氮氧化硅栅极绝缘膜形成，以表现出高的TDDB特性。氮化硅膜形成在硅衬底上，在膜厚度方向的任何部分不包含SiNO 2化学键合单元。

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