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1. 发明授权

US07005682B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US07005682B2
公开(公告)日：2006-02-28
申请号：US10766606
申请日：2004-01-27
申请人： Kiyohisa Ohta , Hiroshi Nakatsu , Kazuaki Sasaki , Junichi Nakamura
发明人： Kiyohisa Ohta , Hiroshi Nakatsu , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/305
摘要： A semiconductor light emitting element of a monolithic structure, including: a first-conductivity-type semiconductor substrate; an active layer formed on the first-conductivity-type semiconductor substrate; a second-conductivity-type clad layer formed on the active layer; and a current diffusion layer formed on the second-conductivity-type clad layer, wherein the active layer is of a first conductivity type.
摘要翻译：一种单片结构的半导体发光元件，包括：第一导电型半导体衬底; 形成在所述第一导电型半导体基板上的有源层; 形成在有源层上的第二导电型覆盖层; 以及形成在所述第二导电型覆盖层上的电流扩散层，其中所述有源层是第一导电类型。

2. 发明授权

US06465812B1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06465812B1
公开(公告)日：2002-10-15
申请号：US09671777
申请日：2000-09-27
申请人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
发明人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L3300
CPC分类号： H01L33/16 , H01L33/30 , H01S5/3202
摘要： A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of AlaGatIn1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.
摘要翻译：本发明的半导体发光器件至少包括：主面从[011]取向的（100）面倾斜的GaAs衬底; 设置在GaAs衬底的主平面上的Al x Ga 1-x As（0 <= x <= 1）的第一缓冲层; 设置在第一缓冲层上的AlyGaxIn1-y-zP（0 <= y <= 1和0 <= z <= 1）的第二缓冲层; 提供在第二缓冲层上的AlaGatIn1-a-tP（0≤s≤1且0 <= t <= 1）的第一包层; 设置在所述第一包层上的有源层; 以及设置在所述有源层上的第二覆层，其中所述第一包层的Al含量s大于所述第二缓冲层的Al含量y。

3. 发明授权

US06468818B2 Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage 有权
标题翻译：一种能够以低电压工作的高亮度半导体发光装置的制造方法
公开(公告)号：US06468818B2
公开(公告)日：2002-10-22
申请号：US09490534
申请日：2000-01-25
申请人： Junichi Nakamura , Hiroshi Nakatsu , Kazuaki Sasaki
发明人： Junichi Nakamura , Hiroshi Nakatsu , Kazuaki Sasaki
IPC分类号： H01L2100
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/14 , Y10S438/936 , Y10S438/956
摘要： A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section. When growing the current diffusion layer from a crystal interface on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor &Dgr;a/a is not lower than 0.25% with respect to the upper clad layer at a crystal interface where the crystal composition changes on the upper clad layer of the light-emitting section, the growth rate at least at the start time of growth is made to be 1.0 &mgr;m/h or less.
摘要翻译：半导体发光器件具有至少包含形成在化合物半导体衬底上的下覆盖层，有源层和上覆盖层的发光部分和在发光元件的上覆盖层上生长的层，发射部分。当晶格匹配因子DELTAa / a的绝对值相对于晶体界面处的上包层不低于0.25％的晶格失配状态从上覆盖层上的晶体界面生长电流扩散层时其中晶体组成在发光部分的上包覆层上变化，至少在生长开始时的生长速率为1.0mum / h以下。

4. 发明授权

US5309001A Light-emitting diode having a surface electrode of a tree-like form 失效
标题翻译：具有树状形状的表面电极的发光二极管
公开(公告)号：US5309001A
公开(公告)日：1994-05-03
申请号：US980666
申请日：1992-11-24
申请人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
发明人： Masanori Watanabe , Mitsuhiro Matsumoto , Hiroshi Nakatsu , Tadashi Takeoka , Osamu Yamamoto , Kazuaki Sasaki
IPC分类号： H01L33/38 , H01L33/00
CPC分类号： H01L33/385 , H01L33/38 , H01L33/20 , H01L33/24
摘要： A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.
摘要翻译： LED的表面上的表面电极具有焊盘，并且至少一级从焊盘线性延伸的分支，二阶分支从一级分支发散并线性延伸，三阶分支发散，从二阶分支线性延伸。表面电极中的焊盘不与下面的半导体层电接触，而表面电极和半导体层在最高级分支的端部彼此电接触。而且，半导体层沿着台面形状的表面电极的图案设置。因此，表面电极下方的无效光发射相对减少，从而可以提高外部量子效率，而且通过省略电流扩散层，甚至可以通过高效率地允许更短波长的光线出射。

5. 发明授权

US5404031A Semiconductor light emitting device with current confining layer 失效
标题翻译：具有电流限制层的半导体发光器件
公开(公告)号：US5404031A
公开(公告)日：1995-04-04
申请号：US270115
申请日：1994-07-01
申请人： Kazuaki Sasaki , Hiroshi Nakatsu , Osamu Yamamoto , Masanori Watanabe , Saburo Yamamoto
发明人： Kazuaki Sasaki , Hiroshi Nakatsu , Osamu Yamamoto , Masanori Watanabe , Saburo Yamamoto
IPC分类号： H01L33/00 , H01L33/10 , H01L33/14 , H01L33/24 , H01L33/28 , H01L33/30 , H01L33/38
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405
摘要： A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.
摘要翻译：公开了一种半导体发光器件，其通过向有源层的一部分提供电流来允许有源层的一部分产生光。半导体发光器件包括：具有上表面和下表面的半导体衬底，上表面具有阶梯部分，阶梯部分将上表面分成至少第一区域和第二区域; 形成在所述基板的上表面上的电流限制层，所述电流限制层在所述阶梯部分处是不连续的，所述电流流过所述第一区域和所述基板的所述第二区域之间的区域; 形成在电流限制层上的多层结构，所述多层结构包括有源层; 仅覆盖所述多层结构的上表面的一部分的第一电极; 以及形成在所述基板的下表面上的第二电极。在半导体发光器件中，从有源层的一部分产生的光通过未被第一电极覆盖的多层结构的上表面的一部分提取到外部。

6. 发明授权

US5228047A Semiconductor laser device and a method for producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5228047A
公开(公告)日：1993-07-13
申请号：US762769
申请日：1991-09-20
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323
CPC分类号： H01S5/164 , H01L33/0062 , H01S2301/18 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

7. 发明授权

US5777349A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5777349A
公开(公告)日：1998-07-07
申请号：US678954
申请日：1996-07-12
申请人： Junichi Nakamura , Hiroshi Nakatsu
发明人： Junichi Nakamura , Hiroshi Nakatsu
IPC分类号： H01L33/14 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/30 , H01L33/14
摘要： A semiconductor light emitting device includes: a compound semiconductor substrate of a first conductive type; a multilayer structure formed on the compound semiconductor substrate, the multilayer structure including at least an active layer for emitting light, a lower cladding layer of the first conductive type and an upper cladding layer of a second conductive type with the active layer interposed therebetween; an intermediate layer of the second conductive type formed on the multilayer structure; and a current diffusion layer of the second conductive type formed on the intermediate layer. The intermediate layer alleviates at least one of a lattice mismatching between the upper cladding layer and the current diffusion layer and a difference in energy positions at a lower end of a conduction band and/or an upper end of a valence band in an energy band profile which is exhibited before forming a junction between the upper cladding layer and the current diffusion layer.
摘要翻译：一种半导体发光器件包括：第一导电类型的化合物半导体衬底; 形成在所述化合物半导体基板上的多层结构，所述多层结构至少包括用于发光的有源层，所述第一导电类型的下包层和具有所述有源层的第二导电类型的上包层; 形成在所述多层结构上的所述第二导电类型的中间层; 以及形成在中间层上的第二导电类型的电流扩散层。中间层减轻了上包层和电流扩散层之间的晶格失配和能带中的导带和/或价带上端的能量位置的差异中的至少一个，其在形成上包层和电流扩散层之间的接合点之前展现。

8. 发明授权

US07166865B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07166865B2
公开(公告)日：2007-01-23
申请号：US10957614
申请日：2004-10-05
申请人： Takahisa Kurahashi , Tetsurou Murakami , Shouichi Ohyama , Hiroshi Nakatsu
发明人： Takahisa Kurahashi , Tetsurou Murakami , Shouichi Ohyama , Hiroshi Nakatsu
IPC分类号： H01L29/15
CPC分类号： H01L33/30 , H01L33/0079
摘要： There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An AlGaInP-based semiconductor light emitting device having a contact layer 8 made of (AlyGa1−y)zIn1−zP (0≦y≦1, 0
摘要翻译：以低成本和高产率提供和制造半导体发光器件，该半导体发光器件不仅可以从其顶表面而且从侧表面提取在发射极层中产生的光并且具有高亮度。一种AlGaInP基半导体发光器件，其具有由（Al x Ga 1-x Y z）1 In 1中的接触层8制成的接触层8 设置在从发射极层3发射的波长透明的发射极层3和透明基板2之间的-z P（0 <= y <= 1,0

9. 发明授权

US06924502B2 Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum 有权
标题翻译：用于稳定地获得发射光谱的峰值波长的半导体发光器件
公开(公告)号：US06924502B2
公开(公告)日：2005-08-02
申请号：US10270593
申请日：2002-10-16
申请人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
发明人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
IPC分类号： H01L33/06 , H01L33/10 , H01L33/28 , H01L33/30 , H01L33/46 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/10
摘要： A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2λ/n or less, where λ is a light emission wavelength and n is an average refractive index of the semiconductor layer disposed in between the multilayer reflection film and the quantum well active layer. A phase difference between a reflected ray of light reflected by the multilayer reflection film and an emitted ray of light from the quantum well active layer is a multiple of 2π. The semiconductor light emitting device stably obtains a specified peak wavelength even when there is slight variance in the distance between the upper surface of the multilayer reflection film and the lower surface of the quantum well active layer.
摘要翻译：半导体发光器件依次在半导体衬底上，多层反射膜，半导体层和量子阱活性层上。多层反射膜的上表面和量子阱活性层的下表面之间的距离为λλ/ n以下，其中λ为发光波长，n为设置在该多层反射膜之间的半导体层的平均折射率多层反射膜和量子阱活性层。由多层反射膜反射的反射光和来自量子阱活性层的发射光之间的相位差为2pi的倍数。即使在多层反射膜的上表面和量子阱活性层的下表面之间的距离稍微变化的情况下，半导体发光器件也稳定地获得规定的峰值波长。

10. 发明授权

US06501101B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US06501101B2
公开(公告)日：2002-12-31
申请号：US09883367
申请日：2001-06-19
申请人： Tetsurou Murakami , Takahisa Kurahashi , Shouichi Ohyama , Hiroshi Nakatsu
发明人： Tetsurou Murakami , Takahisa Kurahashi , Shouichi Ohyama , Hiroshi Nakatsu
IPC分类号： H01L3112
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/10 , H01L33/30
摘要： A light emitting diode comprising a multiple quantum well (MQW) layer as an active layer and a reflecting layer below the active layer, wherein the number and/or total thickness of well layers in the MQW layer is determined such that the MQW layer shows an external quantum efficiency higher than that of an MQW layer including a single well layer.
摘要翻译：一种包括多量子阱（MQW）层作为有源层的发光二极管和在有源层下面的反射层，其中确定MQW层中的阱层的数量和/或总厚度，使得MQW层显示出外部量子效率高于包含单一阱层的MQW层的外部量子效率。

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