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1. 发明授权

US07348195B2 Semiconductor light-emitting device and method for fabricating the device 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07348195B2
公开(公告)日：2008-03-25
申请号：US10900212
申请日：2004-07-28
申请人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
发明人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
IPC分类号： H01L21/20
CPC分类号： H01L33/38 , H01L33/105 , H01L33/22 , H01L2933/0016 , H01L2933/0083
摘要： An n-type AlAs/n-type Al0.5Ga0.5As DBR layer and a p-type (Al0.2Ga0.8)0.5In0.5P/p-type Al0.5In0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al0.5Ga0.5As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.
摘要翻译： n型AlAs / n型Al 0.5 Ga 0.5 As DBR层和p型（Al 0.2 Ga 0.8） 0.5 0.5 在0.5 P / p型Al 0.5 N In 0.5 P DBR层中形成在n型GaAs衬底上以规定的间隔使反射光谱居中在650nm，共振波长为650nm。形成量子阱有源层（发光层），使得在由两个DBR层构成的谐振器中产生的驻波的腹部位置的发光峰值波长变为650nm。在作为由p型电极包围的发光面的p型Al 0.5 Ga 0.5 N 1 As光扩散层的表面上形成光栅图案。通过使发光面粗糙化，从发光层发出的光在各个方向上扩散，减少了发射光波长的辐射角依赖性。

2. 发明授权

US06881985B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US06881985B2
公开(公告)日：2005-04-19
申请号：US10622646
申请日：2003-07-21
申请人： Tetsuroh Murakami , Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba
发明人： Tetsuroh Murakami , Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba
IPC分类号： H01L33/12 , H01L33/14 , H01L33/30 , H01L33/38 , H01L33/00
CPC分类号： H01L33/30 , H01L33/145 , H01L33/38
摘要： A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-side electrode formed on the n-type cladding layer side. The p-type cladding layer consists of a first p-type cladding layer positioned closer to the light-emitting layer and having a lower aluminum content and a lower impurity concentration, and a second p-type cladding layer positioned less closer to the light-emitting layer and having a higher aluminum content and a higher impurity concentration. The LED also has a current blocking layer below the p-side electrode for locally blocking electric current flowing from the p-side electrode to the n-side electrode.
摘要翻译：双异质结型发光二极管（LED）具有GaAlInP材料的发光层，夹在其间的p型包覆层和n型包覆层，p侧形成在p型包覆层侧的电极和形成在n型包覆层侧的n侧电极。 p型覆层由位于更靠近发光层并具有较低铝含量和较低杂质浓度的第一p型覆层形成，并且位于更靠近发光层的第二p型覆层，并且具有较高的铝含量和较高的杂质浓度。 LED也在p侧电极下方具有电流阻挡层，用于局部阻挡从p侧电极流向n侧电极的电流。

3. 发明授权

US06864514B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US06864514B2
公开(公告)日：2005-03-08
申请号：US10727723
申请日：2003-12-03
申请人： Tetsuroh Murakami , Hiroshi Nakatsu , Takahisa Kurahashi , Shouichi Ohyama
发明人： Tetsuroh Murakami , Hiroshi Nakatsu , Takahisa Kurahashi , Shouichi Ohyama
IPC分类号： H01L21/28 , H01L33/12 , H01L33/30 , H01L33/42 , H01L33/46 , H01L29/24
CPC分类号： H01L33/42 , H01L33/30
摘要： A light emitting diode having, at least, an AlGaInP light emitting layer and a transparent electrode, wherein the transparent electrode is made of a ZnO film doped with a group III element or a compound thereof.
摘要翻译：至少具有AlGaInP发光层和透明电极的发光二极管，其中所述透明电极由掺杂有III族元素的ZnO膜或其化合物制成。

4. 发明申请

US20050001222A1 Semiconductor light-emitting device and method for fabricating the device 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050001222A1
公开(公告)日：2005-01-06
申请号：US10900212
申请日：2004-07-28
申请人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
发明人： Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba , Tetsurou Murakami
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/22 , H01L33/30 , H01L33/38 , H01L33/46 , H01L33/00
CPC分类号： H01L33/38 , H01L33/105 , H01L33/22 , H01L2933/0016 , H01L2933/0083
摘要： An n-type AlAs/n-type Al0.5Ga0.5As DBR layer and a p-type (Al0.2Ga0.8)0.5In0.5P/p-type Al0.5In0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al0.5Ga0.5As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.
摘要翻译： n型AlAs / n型Al0.5Ga0.5As DBR层和p型（Al0.2Ga0.8）0.5In0.5P / p型Al0.5In0.5P DBR层形成在n型 GaAs衬底以使得反射光谱以650nm为中心，并且谐振波长为650nm。形成量子阱有源层（发光层），使得在由两个DBR层构成的谐振器中产生的驻波的腹部位置的发光峰值波长变为650nm。在作为由p型电极包围的发光面的p型Al0.5Ga0.5As光扩散层的表面上形成光栅图案。通过使发光面粗糙化，从发光层发出的光在各个方向上扩散，减少了发射光波长的辐射角依赖性。

5. 发明授权

US06794688B2 Semiconductor light-emitting device and manufacturing method therefor, and LED lamp and LED display 有权
标题翻译：半导体发光器件及其制造方法，以及LED灯和LED显示屏
公开(公告)号：US06794688B2
公开(公告)日：2004-09-21
申请号：US10241728
申请日：2002-09-12
申请人： Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Shouici Ooyama
发明人： Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Shouici Ooyama
IPC分类号： H01L29227
CPC分类号： H01L33/145 , H01L33/0095 , H01L33/10 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an AlxGa1−xAs layer and the active layer, in this order. Part of the AlxGa1−xAs layer with respect to the is changed into an AlOy layer (where y is a positive real number).
摘要翻译：半导体发光器件即使具有较少数量的光反射层也呈现高反射率，并且允许从有源层发射的光被有效地提取到外部。该半导体发光器件通过半导体发光器件制造方法以高质量的生产率制造，该半导体发光器件制造方法包括以下步骤：在半导体衬底上提供产生具有特定波长的光的有源层。在半导体衬底上依次层叠Al x Ga 1-x As层和有源层。相对于Al x Ga 1-x As层的一部分被改变为AlOy层（其中y是正实数）。

6. 发明授权

US06621106B2 Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US06621106B2
公开(公告)日：2003-09-16
申请号：US09761829
申请日：2001-01-18
申请人： Tetsuroh Murakami , Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba
发明人： Tetsuroh Murakami , Takahisa Kurahashi , Hiroshi Nakatsu , Hiroyuki Hosoba
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L33/145 , H01L33/38
摘要： A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type cladding layer side, and an n-side electrode formed on the n-type cladding layer side. The p-type cladding layer consists of a first p-type cladding layer positioned closer to the light-emitting layer and having a lower aluminum content and a lower impurity concentration, and a second p-type cladding layer positioned less closer to the light-emitting layer and having a higher aluminum content and a higher impurity concentration. The LED also has a current blocking layer below the p-side electrode for locally blocking electric current flowing from the p-side electrode to the n-side electrode.
摘要翻译：双异质结型发光二极管（LED）具有GaAlInP材料的发光层，夹在其间的p型包覆层和n型包覆层，p侧形成在p型包覆层侧的电极和形成在n型包覆层侧的n侧电极。 p型覆层由位于更靠近发光层并具有较低铝含量和较低杂质浓度的第一p型覆层形成，并且位于更靠近发光层的第二p型覆层，并且具有较高的铝含量和较高的杂质浓度。 LED也在p侧电极下方具有电流阻挡层，用于局部阻挡从p侧电极流向n侧电极的电流。

7. 发明授权

US06617614B2 Semiconductor light-emitting device 失效
公开(公告)号：US06617614B2
公开(公告)日：2003-09-09
申请号：US09943738
申请日：2001-09-04
申请人： Takahisa Kurahashi , Hiroshi Nakatsu , Tetsurou Murakami , Hiroyuki Hosoba
发明人： Takahisa Kurahashi , Hiroshi Nakatsu , Tetsurou Murakami , Hiroyuki Hosoba
IPC分类号： H01L2715
CPC分类号： H01L33/105 , B82Y20/00 , H01S5/18311 , H01S5/3072 , H01S5/34326
摘要： The present invention relates to a semiconductor light-emitting device used for optical transmission (particularly for IEEE 1394) and displays and the like. More specifically, an object of the present invention is to provide a semiconductor light-emitting device capable of emitting the light with a high efficiency by extending a distance from an active layer to a boundary having poor crystal quality due to Group V elements As and P exchange to suppress deterioration in crystal quality of the active layer. According to the present invention, a semiconductor light-emitting device capable of emitting the light with a high efficiency because a reflecting multilayer with a different material system from that of an active layer is formed on the substrate in order to achieve a high reflectance, however, the active layer is formed, after a reflecting multilayer formed with the same material system as that of the active layer is formed thereon, to lengthen a distance between the active layer and a material system exchange boundary.

8. 发明授权

US06433364B1 Semiconductor light emitting device capable of increasing light emitting efficiency 有权
公开(公告)号：US06433364B1
公开(公告)日：2002-08-13
申请号：US09819858
申请日：2001-03-29
申请人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsurou Murakami
发明人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsurou Murakami
IPC分类号： H01L2715
摘要： On an n-GaP substrate transparent against a radiation light of an InAlGaP based semiconductor element, a lattice distortion relaxation layer, a clad layer 13, an active layer, and a clad layer are created with InAlGaP. On top of the layers, there is formed an InxGa1−xP current diffusion layer with In composition ratio x equal to (0

9. 发明授权

US06384430B1 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US06384430B1
公开(公告)日：2002-05-07
申请号：US09853064
申请日：2001-05-10
申请人： Hiroshi Nakatsu , Tetsuroh Murakami , Hiroyuki Hosoba , Takahisa Kurahashi
发明人： Hiroshi Nakatsu , Tetsuroh Murakami , Hiroyuki Hosoba , Takahisa Kurahashi
IPC分类号： H01L2978
CPC分类号： H01L33/30 , H01L33/0025
摘要： A light emitting diode includes a substrate, a light emitting layer, a first cladding layer having a first conductivity type and an energy gap greater than an energy gap of the light emitting layer, a second cladding layer having a second conductivity type and an energy gap greater than an energy gap of the light emitting layer, and an intermediate barrier layer having the same conductivity type as the conductivity type of the light emitting layer but different from the conductivity type of the first or second cladding layer, and having an energy gap less than the energy gap of the first or second cladding layer but greater than the energy gap of the light emitting layer. The light emitting diode has a double heterostructure such that the light emitting layer is interposed between the first and second cladding layer. The intermediate barrier layer is disposed between the light emitting layer and the first cladding layer and/or between the light emitting layer and the second cladding layer.
摘要翻译：发光二极管包括基板，发光层，具有第一导电类型的第一包层和大于发光层的能隙的能隙;第二覆层，具有第二导电类型和能隙大于发光层的能隙，以及具有与发光层的导电类型相同的导电类型但不同于第一或第二包层的导电类型的导电类型的中间阻挡层，并且具有较小的能隙比第一或第二包层的能隙大，但大于发光层的能隙。发光二极管具有双重异质结构，使得发光层介于第一和第二包覆层之间。中间阻挡层设置在发光层和第一包层之间和/或在发光层和第二包层之间。

10. 发明授权

US5581116A Semiconductor device manufactured by selectively controlling growth of an epitaxial layer without a mask 失效
标题翻译：通过选择性地控制没有掩模的外延层的生长制造的半导体器件
公开(公告)号：US5581116A
公开(公告)日：1996-12-03
申请号：US281834
申请日：1994-07-28
申请人： Hiroshi Nakatsu
发明人： Hiroshi Nakatsu
IPC分类号： H01L21/205 , C23C16/04 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/30 , H01L33/34 , H01L33/38 , H01L29/06 , H01L29/04 , H01L33/00 , H01S3/19
CPC分类号： H01L33/20 , C23C16/047 , H01L33/0062 , Y10S438/956 , Y10S438/965 , Y10S438/978
摘要： A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconductor layer formed on a region of the substrate shaded by the step portion.
摘要翻译：一种半导体结构，包括：具有台阶部分的基板; 形成在基板的区域上的第一半导体层，所述第一半导体层通过使用所述台阶部分作为掩模，以与所述突出部分成一定角度的光选择性地照射; 以及形成在由所述台阶部分遮蔽的所述基板的区域上的第二半导体层。

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