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1. 发明授权

US06465812B1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06465812B1
公开(公告)日：2002-10-15
申请号：US09671777
申请日：2000-09-27
申请人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
发明人： Hiroyuki Hosoba , Hiroshi Nakatsu , Takahisa Kurahashi , Tetsuroh Murakami , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L3300
CPC分类号： H01L33/16 , H01L33/30 , H01S5/3202
摘要： A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1−xAs (0≦x≦1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1−y−zP (0≦y≦1 and 0≦z≦1) provided on the first buffer layer; a first cladding layer of AlaGatIn1−a−tP (0≦s≦1 and 0≦t≦1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer.
摘要翻译：本发明的半导体发光器件至少包括：主面从[011]取向的（100）面倾斜的GaAs衬底; 设置在GaAs衬底的主平面上的Al x Ga 1-x As（0 <= x <= 1）的第一缓冲层; 设置在第一缓冲层上的AlyGaxIn1-y-zP（0 <= y <= 1和0 <= z <= 1）的第二缓冲层; 提供在第二缓冲层上的AlaGatIn1-a-tP（0≤s≤1且0 <= t <= 1）的第一包层; 设置在所述第一包层上的有源层; 以及设置在所述有源层上的第二覆层，其中所述第一包层的Al含量s大于所述第二缓冲层的Al含量y。

2. 发明授权

US07005682B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US07005682B2
公开(公告)日：2006-02-28
申请号：US10766606
申请日：2004-01-27
申请人： Kiyohisa Ohta , Hiroshi Nakatsu , Kazuaki Sasaki , Junichi Nakamura
发明人： Kiyohisa Ohta , Hiroshi Nakatsu , Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/305
摘要： A semiconductor light emitting element of a monolithic structure, including: a first-conductivity-type semiconductor substrate; an active layer formed on the first-conductivity-type semiconductor substrate; a second-conductivity-type clad layer formed on the active layer; and a current diffusion layer formed on the second-conductivity-type clad layer, wherein the active layer is of a first conductivity type.
摘要翻译：一种单片结构的半导体发光元件，包括：第一导电型半导体衬底; 形成在所述第一导电型半导体基板上的有源层; 形成在有源层上的第二导电型覆盖层; 以及形成在所述第二导电型覆盖层上的电流扩散层，其中所述有源层是第一导电类型。

3. 发明授权

US06468818B2 Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage 有权
标题翻译：一种能够以低电压工作的高亮度半导体发光装置的制造方法
公开(公告)号：US06468818B2
公开(公告)日：2002-10-22
申请号：US09490534
申请日：2000-01-25
申请人： Junichi Nakamura , Hiroshi Nakatsu , Kazuaki Sasaki
发明人： Junichi Nakamura , Hiroshi Nakatsu , Kazuaki Sasaki
IPC分类号： H01L2100
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/14 , Y10S438/936 , Y10S438/956
摘要： A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section. When growing the current diffusion layer from a crystal interface on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor &Dgr;a/a is not lower than 0.25% with respect to the upper clad layer at a crystal interface where the crystal composition changes on the upper clad layer of the light-emitting section, the growth rate at least at the start time of growth is made to be 1.0 &mgr;m/h or less.
摘要翻译：半导体发光器件具有至少包含形成在化合物半导体衬底上的下覆盖层，有源层和上覆盖层的发光部分和在发光元件的上覆盖层上生长的层，发射部分。当晶格匹配因子DELTAa / a的绝对值相对于晶体界面处的上包层不低于0.25％的晶格失配状态从上覆盖层上的晶体界面生长电流扩散层时其中晶体组成在发光部分的上包覆层上变化，至少在生长开始时的生长速率为1.0mum / h以下。

4. 发明授权

US5498568A Method of producing a compound semiconductor crystal layer with a steep heterointerface 失效
标题翻译：具有陡峭异质界面的化合物半导体晶体层的制造方法
公开(公告)号：US5498568A
公开(公告)日：1996-03-12
申请号：US456870
申请日：1995-06-01
申请人： Hiroyuki Hosoba , Junichi Nakamura , Masanori Watanabe
发明人： Hiroyuki Hosoba , Junichi Nakamura , Masanori Watanabe
IPC分类号： C30B25/02 , C30B25/14 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/30 , H01S5/00
CPC分类号： C30B25/02 , C30B25/14 , C30B29/40 , H01L21/02395 , H01L21/02463 , H01L21/02543 , H01L21/0262 , H01L33/0062 , Y10S438/925
摘要： After a GaAs substrate is set in a reaction container, the pressure in the reaction container is reduced to 10-100 torr and arsine is supplied into the container. A GaAs buffer layer is formed on the GaAs substrate by introducing TMG when the surface temperature of the GaAs substrate is at 650.degree. C. Then, by stopping supply of TMG, the growth of the GaAs buffer layer is stopped (step I). Arsine is switched to phosphine. A time t after the switching, TMA, TMG and TMI adjusted at a predetermined mixing ratio beforehand are introduced into the container, thereby starting the formation of an InGaAlP layer on the GaAs buffer layer. During the growing process, the surface temperature of the GaAs substrate is raised to 750.degree. C. (step II). The InGaAlP layer is grown to a predetermined thickness with the surface temperature of the GaAs substrate being kept at 750.degree. C. (step III).
摘要翻译：将GaAs衬底置于反应容器中后，将反应容器内的压力降低至10-100乇，并将胂供给到容器中。当GaAs衬底的表面温度为650℃时，通过引入TMG，在GaAs衬底上形成GaAs缓冲层。然后，通过停止TMG的供给，停止GaAs缓冲层的生长（步骤I）。胂切换到磷化氢。切换之后的时间t，预先将预定混合比例调节的TMA，TMG和TMI引入容器中，从而开始在GaAs缓冲层上形成InGaAlP层。在生长过程中，将GaAs衬底的表面温度升至750℃（步骤II）。使GaAs衬底的表面温度保持在750℃，将InGaAlP层生长至预定厚度（步骤III）。

5. 发明授权

US5777349A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5777349A
公开(公告)日：1998-07-07
申请号：US678954
申请日：1996-07-12
申请人： Junichi Nakamura , Hiroshi Nakatsu
发明人： Junichi Nakamura , Hiroshi Nakatsu
IPC分类号： H01L33/14 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/30 , H01L33/14
摘要： A semiconductor light emitting device includes: a compound semiconductor substrate of a first conductive type; a multilayer structure formed on the compound semiconductor substrate, the multilayer structure including at least an active layer for emitting light, a lower cladding layer of the first conductive type and an upper cladding layer of a second conductive type with the active layer interposed therebetween; an intermediate layer of the second conductive type formed on the multilayer structure; and a current diffusion layer of the second conductive type formed on the intermediate layer. The intermediate layer alleviates at least one of a lattice mismatching between the upper cladding layer and the current diffusion layer and a difference in energy positions at a lower end of a conduction band and/or an upper end of a valence band in an energy band profile which is exhibited before forming a junction between the upper cladding layer and the current diffusion layer.
摘要翻译：一种半导体发光器件包括：第一导电类型的化合物半导体衬底; 形成在所述化合物半导体基板上的多层结构，所述多层结构至少包括用于发光的有源层，所述第一导电类型的下包层和具有所述有源层的第二导电类型的上包层; 形成在所述多层结构上的所述第二导电类型的中间层; 以及形成在中间层上的第二导电类型的电流扩散层。中间层减轻了上包层和电流扩散层之间的晶格失配和能带中的导带和/或价带上端的能量位置的差异中的至少一个，其在形成上包层和电流扩散层之间的接合点之前展现。

6. 发明申请

US20060038186A1 Light-emitting diode and its manufacturing method 有权
公开(公告)号：US20060038186A1
公开(公告)日：2006-02-23
申请号：US11256001
申请日：2005-10-24
申请人： Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/14 , Y10S438/937
摘要： It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.

7. 发明授权

US06246078B1 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US06246078B1
公开(公告)日：2001-06-12
申请号：US09015052
申请日：1998-01-28
申请人： Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L3300
CPC分类号： H01L33/30 , H01L33/0066 , H01L33/14 , H01L33/145
摘要： The semiconductor light emitting element of the present invention includes: a compound semiconductor substrate having a first conductivity type; a light emitting layer; a compound semiconductor interface layer having a second conductivity type and not containing Al; and a current diffusion layer having the second conductivity type and being made of a compound semiconductor not containing Al.
摘要翻译：本发明的半导体发光元件包括：具有第一导电类型的化合物半导体衬底; 发光层; 具有第二导电类型且不含Al的化合物半导体界面层; 以及具有第二导电类型并由不含有Al的化合物半导体制成的电流扩散层。

8. 发明授权

US07075120B2 Light-emitting diode and its manufacturing method 有权
公开(公告)号：US07075120B2
公开(公告)日：2006-07-11
申请号：US10851249
申请日：2004-05-24
申请人： Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/14 , Y10S438/937
摘要： It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.

9. 发明授权

US06399409B2 Method for fabricating semiconductor light emitting element 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06399409B2
公开(公告)日：2002-06-04
申请号：US09839114
申请日：2001-04-23
申请人： Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L2100
CPC分类号： H01L33/30 , H01L33/0066 , H01L33/14 , H01L33/145
摘要： The semiconductor light emitting element of the present invention includes: a compound semiconductor substrate having a first conductivity type; a light emitting layer; a compound semiconductor interface layer having a second conductivity type and not containing Al; and a current diffusion layer having the second conductivity type and being made of a compound semiconductor not containing Al.
摘要翻译：本发明的半导体发光元件包括：具有第一导电类型的化合物半导体衬底; 发光层; 具有第二导电类型且不含Al的化合物半导体界面层; 以及具有第二导电类型并由不含有Al的化合物半导体制成的电流扩散层。

10. 发明授权

US07531370B2 Light-emitting diode and its manufacturing method 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07531370B2
公开(公告)日：2009-05-12
申请号：US11256001
申请日：2005-10-24
申请人： Kazuaki Sasaki , Junichi Nakamura
发明人： Kazuaki Sasaki , Junichi Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L33/14 , Y10S438/937
摘要： It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.
摘要翻译：本发明的目的是提供具有AlGaInP型发光部分的发光二极管，并且在发光部分的发光侧具有包括In的电流扩散层，从而产生小丘被有效地抑制，并且发光二极管的亮度增加。

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