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1. 发明申请

US20090210166A1 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal 有权
标题翻译：用于预测硅单晶中氧的沉淀行为的方法，用于确定硅单晶生产参数的方法，以及储存用于预测硅单晶中氧沉淀行为的程序
公开(公告)号：US20090210166A1
公开(公告)日：2009-08-20
申请号：US10586445
申请日：2005-01-27
申请人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： G06F19/00
CPC分类号： C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225
摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
摘要翻译：通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率在硅单晶中进行热处理的同时测定硅单晶。此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

2. 发明授权

US08246744B2 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal 有权
标题翻译：用于预测硅单晶中氧的沉淀行为的方法，用于确定硅单晶生产参数的方法，以及储存用于预测硅单晶中氧沉淀行为的程序
公开(公告)号：US08246744B2
公开(公告)日：2012-08-21
申请号：US10586445
申请日：2005-01-27
申请人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： C30B29/06
CPC分类号： C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225
摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
摘要翻译：通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率在硅单晶中进行热处理的同时测定硅单晶。此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

3. 发明授权

US5385115A Semiconductor wafer heat treatment method 失效
标题翻译：半导体晶片热处理方法
公开(公告)号：US5385115A
公开(公告)日：1995-01-31
申请号：US30356
申请日：1993-05-13
申请人： Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： H01L21/322 , H01L21/324 , C30B1/02
CPC分类号： H01L21/3225
摘要： A semiconductor wafer heat treatment method for improving the yield of devices which are end products by sampling sliced single-crystal silicon wafers made by CZ method to previously calculate the thermal donor concentration of each portion on the wafers and providing them with the IG heat treatment process which causes oxygen precipitation nucleus under the heat treatment condition determined according to the thermal donor concentration so that the change value (delta Oi) of the initial oxygen concentration (initial Oi) before the IG heat treatment to the oxygen concentration after the heat treatment will be kept within a predetermined range.
摘要翻译： PCT No.PCT / JP91 / 01259 Sec。 371日期1993年3月17日 102（e）1993年3月17日PCT PCT 1991年9月20日PCT公布。出版物WO92 / 05579 日本1992年4月2日。一种半导体晶片热处理方法，用于通过采用通过CZ方法制备的切片单晶硅晶片来提取作为最终产品的器件的产量，以预先计算晶片上每个部分的供体浓度，并提供它们具有IG热处理过程，其在根据供体浓度确定的热处理条件下引起氧沉淀核，使得IG热处理之前的初始氧浓度（初始Oi）与氧气的变化值（ΔOi）热处理后的浓度将保持在预定范围内。

4. 发明申请

US20050229840A1 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer 有权
标题翻译：单晶硅制造方法，单晶硅晶片制造方法，用于制造单晶硅的晶种，单晶硅锭和单晶硅晶片
公开(公告)号：US20050229840A1
公开(公告)日：2005-10-20
申请号：US10512022
申请日：2003-04-17
申请人： Tetsuhiro Iida , Yutaka Shiraishi , Ryota Suewaka , Junsuke Tomioka
发明人： Tetsuhiro Iida , Yutaka Shiraishi , Ryota Suewaka , Junsuke Tomioka
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06 , C30B21/06 , C30B30/04
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902
摘要： A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal (1) in which the crystal orientation (10) is inclined at a predetermined angle θ with respect to the axial direction (9) so that the edge direction (8) of the {111} crystal plane is inclined with respect to the axial direction (9). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.
摘要翻译：公开了一种消除单晶硅产生滑移位错的方法，能够消除滑移位错的晶种，消除滑移位错的单晶硅锭和单晶硅晶片。通过将晶种浸入熔体中并通过使晶体取向（10）以预定的倾斜方向倾斜的单晶（1）将晶种沿晶种的轴向上拉出而制造单晶硅。角度θ相对于轴向方向（9），使得{111}晶面的边缘方向（8）相对于轴向方向（9）倾斜。当通过CZ法拉长晶种时生长单晶硅时，通过消除厚晶体的滑移位错，可以提高大直径和重量的单晶硅锭。

5. 发明授权

US06315827B1 Apparatus for producing single crystal 失效
标题翻译：单晶制造装置
公开(公告)号：US06315827B1
公开(公告)日：2001-11-13
申请号：US09410723
申请日：1999-09-30
申请人： Shoei Kurosaka , Junsuke Tomioka , Masakazu Kobayashi , Kazuhiro Mimura , Kenji Okamura , Hiroshi Monden , Naritoshi Ohtsukasa , Hiroshi Yoshinada
发明人： Shoei Kurosaka , Junsuke Tomioka , Masakazu Kobayashi , Kazuhiro Mimura , Kenji Okamura , Hiroshi Monden , Naritoshi Ohtsukasa , Hiroshi Yoshinada
IPC分类号： C30B1530
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： There is described an apparatus for producing a single crystal ingot capable of stably manufacturing a single crystal ingot by means of the Czochralski method, without being affected by influence of variation in extension of wires or an offset in points clamped by a clamping member. The clamping member is engaged with an engagement step formed in a single crystal which is being pulled by the CZ method, and the single crystal is pulled. The single crystal ingot manufacturing apparatus is provided with a flexible mechanism for absorbing variation in extension of the wires, in intermediate portions of the wires. Variation in extension of the wires is eliminated by means of the flexible mechanism, thereby retaining the single crystal in an upright position. Further, a sacrifice member which deforms so as to conform to the circumference of the engagement step is interposed between the clamping member and the engagement step, thereby preventing occurrence of cracking or deformation in the single crystal.
摘要翻译：描述了一种用于生产能够通过切克劳斯基法（Czochralski）方法稳定地制造单晶锭的单晶锭的装置，而不受电线延伸的影响或由夹紧件夹紧的点的偏移的影响。夹持构件与通过CZ方法拉制的单晶中形成的接合台阶接合，并且单晶被拉动。单晶锭制造装置在电线的中间部分设置有用于吸收电线延伸变化的柔性机构。通过柔性机构消除了电线延伸的变化，从而将单晶保持在直立位置。此外，在夹紧构件和接合步骤之间插入有变形以使其与接合台阶的圆周相适应的牺牲构件，从而防止单晶中的开裂或变形。

6. 发明授权

US06179911B2 Method for manufacturing single crystal 有权
标题翻译：单晶制造方法
公开(公告)号：US06179911B2
公开(公告)日：2001-01-30
申请号：US09425019
申请日：1999-10-25
申请人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
发明人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12×1017 atoms/cm3 or less than 10×1017 atoms/cm3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon 10 can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.
摘要翻译：本发明提供一种能够制造氧密度小于12×10 17原子/ cm 3或小于10×10 17原子/ cm 3的单晶的方法和装置，其中所制造的单晶的氧密度沿其纵向轴线均匀分布。控制输入到围绕石英坩埚4的主加热器6的电力以及设置在石英坩埚4上方的倒塌锥体形状的顶部加热器9，以在熔融过程中将熔体5的温度保持在预设范围内拉起单晶硅10.当组合主加热器6和顶部加热器9时，可以将从主加热器6发射的热量保持较小，并且石英坩埚4上的热负荷和从可以减少石英坩埚4并且被分解成熔体5。因此，可以获得具有低氧密度并沿着其纵轴具有均匀分布的氧密度的单晶。此外，单晶硅10可以被赋予适当的热历史。在上述过程中，如果对熔体施加磁场，则可以获得低得多的氧密度的单晶。

7. 发明授权

US06179910B2 Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors 有权
标题翻译：制造适用于制造半导体的硅单晶和晶片的方法
公开(公告)号：US06179910B2
公开(公告)日：2001-01-30
申请号：US09396107
申请日：1999-09-14
申请人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
发明人： Takashi Yokoyama , Shin Matsukuma , Toshiaki Saishoji , Kozo Nakamura , Junsuke Tomioka
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.
摘要翻译：本发明提供一种制造单晶硅的方法。该方法尽管硅单晶的尺寸能够消除存在于硅单晶的深区域中的空隙缺陷。根据本发明的硅单晶在热氧化处理过程中拉动晶片的环形氧化诱导堆垛层错（OSF环）的半径大于晶片半径的一半。

8. 发明授权

US6042644A Single crystal pulling method 失效
标题翻译：单晶拉拔法
公开(公告)号：US6042644A
公开(公告)日：2000-03-28
申请号：US121858
申请日：1998-07-24
申请人： Shoei Kurosaka , Hiroshi Inagaki , Shigeki Kawashima , Junsuke Tomioka
发明人： Shoei Kurosaka , Hiroshi Inagaki , Shigeki Kawashima , Junsuke Tomioka
IPC分类号： C30B15/22 , C30B15/30 , C30B15/32
CPC分类号： C30B15/30 , C30B15/22 , Y10S117/911 , Y10T117/1068 , Y10T117/1072
摘要： A single crystal pulling method includes the steps of: immersing seed crystal in a melt; growing single crystal around the seed crystal and reducing its diameter to remove dislocation in the single crystal; prior to forming a straight waist product portion of single crystal having a prescribed diameter, forming a straight waist holding portion having a diameter smaller than the prescribed diameter; holding the straight waist holding portion by using a single crystal holding device; and pulling the straight waist product portion while the straight waist holding portion is held. Preferably the step of forming the straight waist holding portion includes a step of varying a pulling speed to make unevenness in the surface thereof.
摘要翻译：单晶拉拔方法包括以下步骤：将晶种浸入熔体中; 在晶种周围生长单晶并减小其直径以去除单晶中的位错; 在形成具有规定直径的单晶的直腰部产品部分之前，形成直径小于规定直径的直腰部保持部; 通过使用单晶保持装置保持直腰部保持部; 并且在保持直腰部保持部的同时拉出直腰部产品部。优选地，形成直腰部保持部的步骤包括改变拉拔速度以使其表面不均匀的步骤。

9. 发明授权

US5968260A Method for fabricating a single-crystal semiconductor 失效
标题翻译：制造单晶半导体的方法
公开(公告)号：US5968260A
公开(公告)日：1999-10-19
申请号：US829412
申请日：1997-03-31
申请人： Toshiaki Saishouji , Tetsuhiro Iida , Kouzou Nakamura , Toshimichi Kubota , Junsuke Tomioka
发明人： Toshiaki Saishouji , Tetsuhiro Iida , Kouzou Nakamura , Toshimichi Kubota , Junsuke Tomioka
IPC分类号： C30B15/20 , C30B15/00 , C30B15/22 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/206 , C30B15/22
摘要： A method for fabricating a single-crystal semiconductor by means of CZ method is disclosed. The method separates the single-crystal semiconductor from the melt by increasing the lift rate when the growth of a crystal body is finished. By controlling the lift rate, the single-crystal semiconductor is then gradually cooled within a range of an arbitrary crystal temperature, thereby forming a concave separated surface. The single-crystal semiconductor is cooled at a rate of lower than 35.degree. C./min when the temperature of the separated surface is within a range between the melting point and 1000.degree. C., or by keeping the temperature of the separated surface within a range between 1250.degree. C. and 1000.degree. C. for more than 30 minutes. Therefore, no dislocation is introduced in the crystal body, and productivity is improved.
摘要翻译：公开了一种通过CZ方法制造单晶半导体的方法。该方法通过在结晶体的生长结束时提高提升速率将单晶半导体与熔体分离。通过控制提升速度，然后在任意晶体温度的范围内逐渐冷却单晶半导体，从而形成凹分离表面。当分离的表面的温度在熔点和1000℃之间的范围内时，或者通过将分离的表面的温度保持在1000℃以内，单晶半导体以低于35℃/分钟的速率被冷却在1250℃和1000℃之间的范围内超过30分钟。因此，在晶体中不引入位错，提高生产率。

10. 发明授权

US08150784B2 Control system and method for controlled object in time variant system with dead time, such as single crystal production device by czochralski method 有权
标题翻译：时变系统中受控对象的控制系统和方法，如单晶生产装置，采用切克劳斯基法
公开(公告)号：US08150784B2
公开(公告)日：2012-04-03
申请号：US11989749
申请日：2006-06-07
申请人： Kenichi Bandoh , Shigeo Morimoto , Takuji Okumura , Tetsu Nagata , Masaru Shimada , Junsuke Tomioka , Yutaka Shiraishi , Takeshi Kodama
发明人： Kenichi Bandoh , Shigeo Morimoto , Takuji Okumura , Tetsu Nagata , Masaru Shimada , Junsuke Tomioka , Yutaka Shiraishi , Takeshi Kodama
IPC分类号： G06E1/00 , G06E3/00 , G06F15/18 , G06G7/00
CPC分类号： C30B15/20 , C30B29/06
摘要： A device controls an object in a time variant system with a dead time such as a Czochralski method single crystal production device (CZ equipment). The dead time, time constant, and process gain value of an object (CZ equipment) are set. The process gain preset value has time variant characteristics. An output value and its first-order and second-order time differentiated values serve as the state variable. A nonlinear state predicting unit predicts a state variable value at a future time, based upon the current output value, dead time, time constant, and process gain preset value. A gain scheduled sliding mode control unit performs a gain scheduled sliding mode control operation based upon the state variable value at the future time, an output deviation at the future time, the time constant, and the set value of the process gain at the future time, to determine the manipulated variable of the object.
摘要翻译：设备控制具有死区时间的时变系统中的对象，如Czochralski方法单晶生产设备（CZ设备）。设置物体（CZ设备）的死区时间，时间常数和过程增益值。过程增益预设值具有时变特征。输出值及其一阶和二阶时间微分值作为状态变量。非线性状态预测单元基于当前输出值，死区时间，时间常数和过程增益预设值来预测未来时间的状态变量值。增益调度滑动模式控制单元基于未来时间的状态变量值，未来时间的输出偏差，时间常数和未来时间的处理增益的设定值来执行增益调度滑模控制操作，以确定对象的操纵变量。

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