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1. 发明授权

US06179911B2 Method for manufacturing single crystal 有权
标题翻译：单晶制造方法
公开(公告)号：US06179911B2
公开(公告)日：2001-01-30
申请号：US09425019
申请日：1999-10-25
申请人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
发明人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12×1017 atoms/cm3 or less than 10×1017 atoms/cm3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon 10 can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.
摘要翻译：本发明提供一种能够制造氧密度小于12×10 17原子/ cm 3或小于10×10 17原子/ cm 3的单晶的方法和装置，其中所制造的单晶的氧密度沿其纵向轴线均匀分布。控制输入到围绕石英坩埚4的主加热器6的电力以及设置在石英坩埚4上方的倒塌锥体形状的顶部加热器9，以在熔融过程中将熔体5的温度保持在预设范围内拉起单晶硅10.当组合主加热器6和顶部加热器9时，可以将从主加热器6发射的热量保持较小，并且石英坩埚4上的热负荷和从可以减少石英坩埚4并且被分解成熔体5。因此，可以获得具有低氧密度并沿着其纵轴具有均匀分布的氧密度的单晶。此外，单晶硅10可以被赋予适当的热历史。在上述过程中，如果对熔体施加磁场，则可以获得低得多的氧密度的单晶。

2. 发明授权

US6042646A Simple method for detecting temperature distributions in single crystals and method for manufacturing silicon single crystals by employing the simple method 失效
标题翻译：采用简单方法检测单晶温度分布的简单方法及单晶硅制造方法
公开(公告)号：US6042646A
公开(公告)日：2000-03-28
申请号：US15515
申请日：1998-01-29
申请人： Fumitaka Ishikawa , Toshiaki Saishoji , Kozo Nakamura
发明人： Fumitaka Ishikawa , Toshiaki Saishoji , Kozo Nakamura
IPC分类号： C30B15/00 , C30B15/14 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1004 , Y10T117/1008
摘要： A single crystal is pulled to a length at which the beginning of the body of the single crystal is assumed sufficiently to have been cooled down to a temperature below 1000.degree. C.; then the single crystal being pulled is detached from the molten silicon by pulling it at a speed high enough to cut it out from the molten silicon. Then oxygen precipitation heat-treatment is performed on the single crystal to locate the portion of AOP. AOP arises at the boundary of grown-in defects being formed zone while the single crystal passes through 1100.degree. C., and the position is at about 1100.degree. C. immediately before, detaching the single crystal out from the molten silicon. Therefore, the position at temperature 1100.degree. C. in the single crystal immediately before detaching the single crystal out from the molten silicon are known, then the temperature distributions of the single crystal immediately before detaching it out from the molten silicon can be decided easily. If the speed at which the temperature range near 1100.degree. C. is passed through is controlled, then the occurrence of the defects while growing the single crystal can be controlled.
摘要翻译：将单晶拉至一定长度，在该长度下，假定单晶体的开始充分地冷却至低于1000℃的温度; 然后通过以足够高的速度将熔融硅从熔融硅中分离出来，将其从熔融硅中切出。然后在单晶上进行氧沉淀热处理以定位AOP的部分。在单晶通过1100℃时，在形成区域的生长缺陷的边界处产生AOP，并且立即在约1100℃的位置处将单晶从熔融硅中分离出来。因此，在将单晶从熔融硅中分离出来之前，在单晶中的1100℃的位置是已知的，因此可以容易地决定将其从熔融硅中分离出来之前的单晶的温度分布。如果通过1100℃附近的温度的速度被控制，则可以控制生长单晶时的缺陷的发生。

3. 发明授权

US6007625A Apparatus for manufacturing single crystal 失效
标题翻译：单晶制造装置
公开(公告)号：US6007625A
公开(公告)日：1999-12-28
申请号：US941309
申请日：1997-09-30
申请人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
发明人： Junsuke Tomioka , Hiroshi Inagaki , Fumitaka Ishikawa
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12.times.10.sup.17 atoms/cm.sup.3 or less than 10.times.10.sup.17 atoms/cm.sup.3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon 10 can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.
摘要翻译：本发明提供能够制造氧密度小于12×10 17原子/ cm 3或小于10×10 17原子/ cm 3的单晶的方法和装置，其中所制造的单晶的氧密度沿其纵向轴线均匀分布。控制输入到围绕石英坩埚4的主加热器6的电力以及设置在石英坩埚4上方的倒塌锥体形状的顶部加热器9，以在熔融过程中将熔体5的温度保持在预设范围内拉起单晶硅10.当组合主加热器6和顶部加热器9时，可以将从主加热器6发射的热量保持较小，并且石英坩埚4上的热负荷和从可以减少石英坩埚4并且被分解成熔体5。因此，可以获得具有低氧密度并沿着其纵轴具有均匀分布的氧密度的单晶。此外，单晶硅10可以被赋予适当的热历史。在上述过程中，如果对熔体施加磁场，则可以获得低得多的氧密度的单晶。

4. 发明授权

US5951759A Apparatus of pulling up single crystals 失效
标题翻译：提取单晶的装置
公开(公告)号：US5951759A
公开(公告)日：1999-09-14
申请号：US950435
申请日：1997-10-15
申请人： Hiroshi Inagaki , Fumitaka Ishikawa
发明人： Hiroshi Inagaki , Fumitaka Ishikawa
IPC分类号： C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： This invention provides a apparatus and a method of pulling up single crystals, which respond to the weight increase of semiconductor single crystal produced by the CZ method. The retaining wire wind-up mechanisms 11, 12; multiple pairs of guide pipes 4a, 4c capable of being moved upward or downward with respect to the seed holder 1; and a plurality of retaining wires 13, 15, each retaining wire passing through one pair of the guide pipes and having its central portion to be bent into a "U" shape are provided in the central portion of the lifting wire 5. The single crystal 17 can be retained by the retaining wire 13, 15, if the guide pipes 4a, 4c are driven to move downward and the "U" shaped portions of the retaining wires 13, 15 are driven to engage with the necked portion 17b so as to lift single crystal 17. The load is determined based on the detected value coming from the weight sensors installed on the means for winding up the retaining wires. Furthermore, when the single crystal 17 has to be re-melted, the retaining wires 13, 15 is loosened and disengaged with the necked portion 17b.
摘要翻译：本发明提供一种拉伸单晶的装置和方法，其响应于通过CZ方法产生的半导体单晶的重量增加。保持线卷绕机构11,12; 能够相对于种子保持器1向上或向下移动的多对导管4a，4c; 并且在提升线5的中央部设置有多条保持线13,15，每条保持线通过一对导管并且具有被弯曲成“U”形的中心部分的保持线。单晶如果引导管4a，4c被驱动向下移动并且保持线13,15的“U”形部分被驱动以与颈部17b接合，则保持线13,15可以被保持线13,15保持，以便提升单晶17.负载基于来自安装在用于卷绕保持线的装置上的重量传感器的检测值来确定。此外，当单晶17必须再熔化时，保持线13,15被松开并与颈部17b分离。

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