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    • 3. 发明申请
    • POWER SEMICONDUCTOR DEVICE
    • 功率半导体器件
    • US20120241899A1
    • 2012-09-27
    • US13423131
    • 2012-03-16
    • Masakazu KOBAYASHI
    • Masakazu KOBAYASHI
    • H01L29/06
    • H01L29/0615H01L29/7395
    • A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of the second conductivity type. The second semiconductor layer is provided on the first semiconductor layer and has a lower concentration of first conductivity type impurity than the first semiconductor layer. The third semiconductor layer is provided on a surface of the second semiconductor layer. The fourth semiconductor layer is selectively provided on a surface of the third semiconductor layer and has a higher concentration of second conductivity type impurity than the third semiconductor layer. The third semiconductor layer includes a carrier lifetime reducing region adjacent to a bottom surface of the fourth semiconductor layer. The carrier lifetime reducing region is spaced from the second semiconductor layer.
    • 功率半导体器件包括第一导电类型的第一半导体层,第一导电类型的第二半导体层,第二导电类型的第三半导体层和第二导电类型的第四半导体层。 第二半导体层设置在第一半导体层上,并且具有比第一半导体层低的第一导电型杂质浓度。 第三半导体层设置在第二半导体层的表面上。 第四半导体层选择性地设置在第三半导体层的表面上,并且具有比第三半导体层更高的第二导电型杂质浓度。 第三半导体层包括与第四半导体层的底表面相邻的载流子寿命降低区域。 载流子寿命降低区域与第二半导体层间隔开。
    • 4. 发明申请
    • REVERSE CONDUCTING-INSULATED GATE BIPOLAR TRANSISTOR
    • 反向导电绝缘栅双极晶体管
    • US20120068220A1
    • 2012-03-22
    • US13235154
    • 2011-09-16
    • Toshiaki KOBAYASHIMasakazu Kobayashi
    • Toshiaki KOBAYASHIMasakazu Kobayashi
    • H01L29/747
    • H01L29/7397H01L29/0834
    • According to one embodiment, in a reverse conducting-insulated gate bipolar transistor, the buffer layer is provided on the backside of the second base layer, has a higher impurity concentration in comparison with the second base layer. The first collector layer is in contact with a portion of the backside of the buffer layer, has a higher impurity concentration in comparison with the second base layer. The second collector layer is in contact with a portion of the backside of the buffer layer, is provided so as to surround the first collector layer, has a higher impurity concentration in comparison with the first base layer. The third collector layer is in contact with a portion of the backside of the buffer layer, is provided so as to surround the second collector layer, has a higher impurity concentration in comparison with the second collector layer.
    • 根据一个实施例,在反向导通绝缘栅双极晶体管中,缓冲层设置在第二基极层的背面,与第二基极层相比具有较高的杂质浓度。 第一集电极层与缓冲层的背面的一部分接触,与第二基底层相比具有较高的杂质浓度。 与第一基底层相比,第二集电体层与缓冲层的背面的一部分接触,设置为围绕第一集电体层,具有较高的杂质浓度。 与第二集电体层相比,第三集电体层与缓冲层的背面的一部分接触,设置为围绕第二集电体层,具有较高的杂质浓度。
    • 6. 发明授权
    • Purifier
    • 净化器
    • US08061523B2
    • 2011-11-22
    • US12662090
    • 2010-03-30
    • Shigeki UebayashiMasakazu KobayashiTakuji Nakano
    • Shigeki UebayashiMasakazu KobayashiTakuji Nakano
    • B07B9/00
    • B07B1/46B02B1/02B07B1/34B07B1/4645B07B4/08B07B13/16
    • A purifier is provided that is capable of uniformly sucking powder in a width direction of the sieve layers even when the purifier is configured to be provided with an air distribution chamber formed as being tapered upward and to have a horizontal cyclone provided above the air distribution chamber.The air distribution chamber is configured of paired inclined surfaces formed as being tapered upward, has a suction passage formed as a horizontal cyclone placed above the air distribution chamber. Also, a plurality of barrier walls are provided in the air distribution chamber in a direction perpendicular to a longitudinal direction of sieve layers, the air distribution chamber is sectioned by the barrier walls into a plurality of chambers, and rectifying plates are further provided to the air distribution chamber at a narrow position between the paired inclined surfaces to prevent non-uniformity of suction of powder on the sieve layers.
    • 提供一种净化器,其能够均匀地在筛层的宽度方向上吸入粉末,即使当净化器被配置为设置有形成为向上锥形的空气分配室并且具有设置在空气分配室上方的水平旋风分离器 。 空气分配室由成对的倾斜面形成为向上锥形,具有形成为配置在分配室上方的水平旋风分离器的吸入通路。 此外,在空气分配室中沿着与筛层的纵向方向垂直的方向设置多个阻挡壁,将分配室由阻隔壁分割成多个室,并且整流板还设置在 空气分配室在成对的倾斜表面之间的狭窄位置,以防止粉末在筛层上的吸力不均匀。
    • 8. 发明申请
    • FLUX-GATE LEAKAGE CURRENT SENSOR
    • 漏电流漏电流传感器
    • US20110006779A1
    • 2011-01-13
    • US12831302
    • 2010-07-07
    • Masakazu KOBAYASHIKonghui Yu
    • Masakazu KOBAYASHIKonghui Yu
    • G01R31/02
    • G01R15/185G01R31/025G01R33/04
    • A flux-gate leakage current sensor includes: an annular core; a coil wound around the core; a driving circuit which applies to the coil a voltage with a positive/negative symmetric rectangular wave so as to saturate a density of a magnetic flux of the coil while reversing a direction of the magnetic flux; a comparator circuit which compares a measured voltage changing according to a coil current flowing in the coil with a positive-side reference voltage and a negative-side reference voltage that are positive/negative symmetric to each other, and outputs a positive-side electric signal corresponding to a period in which the measured voltage is higher than the positive-side reference voltage and a negative-side electric signal corresponding to a period in which the measured voltage is lower than the negative-side reference voltage; and a determination circuit which compares the positive-side electric signal and the negative-side electric signal output from the comparator circuit.
    • 磁通门漏电流传感器包括:环形磁芯; 缠绕在芯上的线圈; 驱动电路,其对线圈施加正/负对称矩形波的电压,以使线圈的方向反转来饱和线圈的磁通密度; 比较电路,其将根据线圈中流过的线圈电流的测量电压与正/负对称的正侧基准电压和负侧基准电压进行比较,并输出正侧电信号 对应于测量电压高于正侧参考电压的时段和对应于测量电压低于负侧参考电压的周期的负侧电信号; 以及比较从比较电路输出的正侧电信号和负侧电信号的判定电路。