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1. 发明授权

US08246744B2 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal 有权
标题翻译：用于预测硅单晶中氧的沉淀行为的方法，用于确定硅单晶生产参数的方法，以及储存用于预测硅单晶中氧沉淀行为的程序
公开(公告)号：US08246744B2
公开(公告)日：2012-08-21
申请号：US10586445
申请日：2005-01-27
申请人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： C30B29/06
CPC分类号： C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225
摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
摘要翻译：通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率在硅单晶中进行热处理的同时测定硅单晶。此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

2. 发明授权

US5385115A Semiconductor wafer heat treatment method 失效
标题翻译：半导体晶片热处理方法
公开(公告)号：US5385115A
公开(公告)日：1995-01-31
申请号：US30356
申请日：1993-05-13
申请人： Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： H01L21/322 , H01L21/324 , C30B1/02
CPC分类号： H01L21/3225
摘要： A semiconductor wafer heat treatment method for improving the yield of devices which are end products by sampling sliced single-crystal silicon wafers made by CZ method to previously calculate the thermal donor concentration of each portion on the wafers and providing them with the IG heat treatment process which causes oxygen precipitation nucleus under the heat treatment condition determined according to the thermal donor concentration so that the change value (delta Oi) of the initial oxygen concentration (initial Oi) before the IG heat treatment to the oxygen concentration after the heat treatment will be kept within a predetermined range.
摘要翻译： PCT No.PCT / JP91 / 01259 Sec。 371日期1993年3月17日 102（e）1993年3月17日PCT PCT 1991年9月20日PCT公布。出版物WO92 / 05579 日本1992年4月2日。一种半导体晶片热处理方法，用于通过采用通过CZ方法制备的切片单晶硅晶片来提取作为最终产品的器件的产量，以预先计算晶片上每个部分的供体浓度，并提供它们具有IG热处理过程，其在根据供体浓度确定的热处理条件下引起氧沉淀核，使得IG热处理之前的初始氧浓度（初始Oi）与氧气的变化值（ΔOi）热处理后的浓度将保持在预定范围内。

3. 发明申请

US20090210166A1 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal 有权
标题翻译：用于预测硅单晶中氧的沉淀行为的方法，用于确定硅单晶生产参数的方法，以及储存用于预测硅单晶中氧沉淀行为的程序
公开(公告)号：US20090210166A1
公开(公告)日：2009-08-20
申请号：US10586445
申请日：2005-01-27
申请人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
发明人： Kozo Nakamura , Junsuke Tomioka , Tetsuro Akagi , Shiro Yoshino
IPC分类号： G06F19/00
CPC分类号： C30B15/206 , C30B29/06 , C30B33/02 , H01L21/3225
摘要： By specifying an initial oxygen concentration in a silicon single crystal and a concentration of thermal donors produced according to a thermal history from 400° C. to 550° C. that the silicon single crystal undergoes during crystal growth, a nucleation rate of oxygen precipitates produced in the silicon single crystal while the silicon single crystal is subjected to a heat treatment is determined. Further, by specifying the heat treatment condition of the silicon single crystal, an oxygen precipitate density and an amount of precipitated oxygen under a given heat treatment condition are predicted by calculation.
摘要翻译：通过指定硅单晶中的初始氧浓度和根据400℃至550℃的热历史产生的热供体的浓度，晶体生长期间硅单晶经历，产生氧沉淀物的成核速率在硅单晶中进行热处理的同时测定硅单晶。此外，通过规定硅单晶的热处理条件，通过计算来预测在给定的热处理条件下的氧沉淀物浓度和沉淀氧的量。

4. 发明授权

US4188785A Fluid coupling 失效
标题翻译：流体联轴器
公开(公告)号：US4188785A
公开(公告)日：1980-02-19
申请号：US893437
申请日：1978-04-04
申请人： Masahisa Ando , Keigo Kato , Masami Yamazaki , Tetsuro Akagi
发明人： Masahisa Ando , Keigo Kato , Masami Yamazaki , Tetsuro Akagi
IPC分类号： F16D31/06 , F16D31/04 , F16D31/00
CPC分类号： F16D31/04
摘要： Disclosed is a fluid coupling which includes: a housing being used as a rotary driving member; a rotor rotatably mounted in the housing and being used as a driven member, a fluid pump having a pump chamber defined between the housing and the rotor; a fluid inlet port and a fluid outlet port; and a fluid circulation passage between the chamber and the housing, such that fluid in the pump circulates from the fluid circulation passage into the pump chamber through the inlet port and from the pump chamber through the outlet port into the fluid passage. The fluid coupling further includes: a fluid lock mechanism consisting of a cylinder bore provided in the housing such that the axis of the cylinder bore is in the radial direction of the coupling; a governor-weight sealingly and slidingly disposed in the cylinder bore; a spring for urging the governor-weight in the radially inward direction; a first opening provided at the radially inward portion of the cylinder bore, and; a second opening provided at the side wall portion of the cylinder bore. The first and second openings are provided in the fluid circulation passage which communicates the fluid inlet port with the fluid outlet port.
摘要翻译：公开了一种流体联轴器，其包括：壳体，用作旋转驱动构件; 可转动地安装在壳体中并用作从动构件的转子，具有限定在壳体和转子之间的泵室的流体泵; 流体入口和流体出口; 以及腔室和壳体之间的流体循环通道，使得泵中的流体通过入口从流体循环通道循环到泵室中，并且通过出口从泵室循环到流体通道中。流体联接器还包括：流体锁定机构，其由设置在壳体中的气缸孔组成，使得气缸孔的轴线处于联接器的径向方向; 密封地且滑动地设置在气缸孔中的调速器重量; 用于在径向向内的方向上推压调速器的弹簧; 设置在所述气缸孔的径向向内部分的第一开口，设置在气缸孔的侧壁部分的第二开口。第一和第二开口设置在流体循环通道中，其将流体入口与流体出口连通。

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