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1. 发明授权

US08784672B2 Photomasks and methods of manufacturing the same 有权
标题翻译：光掩模及其制造方法
公开(公告)号：US08784672B2
公开(公告)日：2014-07-22
申请号：US13279859
申请日：2011-10-24
申请人： Jong-Keun Oh , Dae-Hyuk Kang , Chan-Uk Jeon , Hyung-Ho Ko , Sung-Jae Han , Jung-Jin Kim
发明人： Jong-Keun Oh , Dae-Hyuk Kang , Chan-Uk Jeon , Hyung-Ho Ko , Sung-Jae Han , Jung-Jin Kim
IPC分类号： G03F1/46 , G03F1/48
CPC分类号： B82Y10/00 , G03F1/46 , G03F1/48 , G03F1/50 , G03F1/54 , G03F1/68 , G03F1/80
摘要： In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.
摘要翻译：在制造光掩模图案的方法中，在透明基板上依次形成遮光层图案和抗反射层图案。在遮光层图案的侧壁上进行氧化和氮化处理，以在遮光层图案的横向部分上形成保护层图案。

2. 发明申请

US20120148944A1 PHOTOMASKS AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：照相机及其制造方法
公开(公告)号：US20120148944A1
公开(公告)日：2012-06-14
申请号：US13279859
申请日：2011-10-24
申请人： Jong-Keun OH , Dae-Hyuk Kang , Chan-Uk Jeon , Hyung-Ho Ko , Sung-Jae Han , Jung-Jin Kim
发明人： Jong-Keun OH , Dae-Hyuk Kang , Chan-Uk Jeon , Hyung-Ho Ko , Sung-Jae Han , Jung-Jin Kim
IPC分类号： G03F1/80 , G03F1/00 , G03F1/68 , B82Y30/00
CPC分类号： B82Y10/00 , G03F1/46 , G03F1/48 , G03F1/50 , G03F1/54 , G03F1/68 , G03F1/80
摘要： In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.
摘要翻译：在制造光掩模图案的方法中，在透明基板上依次形成遮光层图案和抗反射层图案。在遮光层图案的侧壁上进行氧化和氮化处理，以在遮光层图案的横向部分上形成保护层图案。

3. 发明授权

US07959738B2 Method of removing photoresist and method of manufacturing a semiconductor device 失效
标题翻译：去除光刻胶的方法和制造半导体器件的方法
公开(公告)号：US07959738B2
公开(公告)日：2011-06-14
申请号：US11984340
申请日：2007-11-16
申请人： Dae-Hyuk Kang , Hyo-San Lee , Dong-Gyun Han , Chang-Ki Hong , Kun-Tack Lee
发明人： Dae-Hyuk Kang , Hyo-San Lee , Dong-Gyun Han , Chang-Ki Hong , Kun-Tack Lee
IPC分类号： H01L21/28
CPC分类号： H01L21/31133 , G03F7/422 , G03F7/425 , H01L21/28061 , H01L29/4941 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.
摘要翻译：去除光致抗蚀剂的方法可以包括在具有包括金属的导电结构的基底上的光致抗蚀剂中渗透超临界二氧化碳。渗透超临界二氧化碳的光致抗蚀剂可以容易地去除。可以使用来自基底的光致抗蚀剂清洁溶液去除渗透超临界二氧化碳的光致抗蚀剂。光致抗蚀剂清洁溶液可以包括约8重量％至约20重量％的链烷醇胺溶液，约25重量％至约40重量％的极性有机溶液，约0.5重量％至约 3重量％，其余为水。可以容易地去除光致抗蚀剂，而不会在等离子体工艺中损坏导电结构。

4. 发明申请

US20070264793A1 Methods of Manufacturing Semiconductor Memory Devices with Unit Cells Having Charge Trapping Layers 失效
标题翻译：制造具有电荷陷阱层的单元电池的半导体存储器件的方法
公开(公告)号：US20070264793A1
公开(公告)日：2007-11-15
申请号：US11746761
申请日：2007-05-10
申请人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwam Shim , Jong-Won Lee
发明人： Jung-Min Oh , Jeong-Nam Han , Chang-Ki Hong , Kun-Tack Lee , Dae-Hyuk Kang , Woo-Gwam Shim , Jong-Won Lee
IPC分类号： H01L21/76
CPC分类号： H01L27/115 , H01L21/76229 , H01L27/11568
摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.
摘要翻译：在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。形成从衬底突出的隔离层以填充沟槽。在基板上形成第一层之后，在第一层上形成预备的第二层图案。预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。在初步第二层和隔离层上形成第三层。在第三层上形成第四层。部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

5. 发明授权

US08211804B2 Methods of forming a hole having a vertical profile and semiconductor devices having a vertical hole 有权
标题翻译：形成具有垂直剖面的孔的方法和具有垂直孔的半导体器件
公开(公告)号：US08211804B2
公开(公告)日：2012-07-03
申请号：US13025410
申请日：2011-02-11
申请人： Hyo-San Lee , Bo-Un Yoon , Kun-Tack Lee , Dae-Hyuk Kang , Seong-Ho Moon , So-Ra Han
发明人： Hyo-San Lee , Bo-Un Yoon , Kun-Tack Lee , Dae-Hyuk Kang , Seong-Ho Moon , So-Ra Han
IPC分类号： H01L21/311
CPC分类号： H01L21/31111 , H01L21/32134 , H01L21/76802 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L27/11578 , H01L27/11582 , H01L28/91 , H01L29/4236 , H01L29/66621 , H01L29/66833 , H01L29/7926
摘要： In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.
摘要翻译：在形成孔的方法中，在基板上形成绝缘层，通过绝缘层形成露出基板的预备孔。然后在基板上形成包含有机聚合物的感光层图案以填充预备孔。然后将包含氟化氢（HF）或氟（F2）的蚀刻气体提供到感光层图案上以蚀刻绝缘层，使得预备孔的宽度增加。

6. 发明授权

US08119476B2 Methods of forming integrated circuit capacitors having sidewall supports and capacitors formed thereby 有权
标题翻译：形成具有侧壁支撑件的集成电路电容器和由此形成的电容器的方法
公开(公告)号：US08119476B2
公开(公告)日：2012-02-21
申请号：US12906184
申请日：2010-10-18
申请人： Dae-Hyuk Kang , Bo-Un Yoon , Kun-Tack Lee , Woo-Gwan Shim , Ji-Hoon Cha , Im-Soo Park , Hyo-San Lee , Young-Hoo Kim , Jung-Min Oh
发明人： Dae-Hyuk Kang , Bo-Un Yoon , Kun-Tack Lee , Woo-Gwan Shim , Ji-Hoon Cha , Im-Soo Park , Hyo-San Lee , Young-Hoo Kim , Jung-Min Oh
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/87
摘要： In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.
摘要翻译：在形成电容器的方法中，可以在基板上形成包括第一绝缘材料的第一模层图案。第一模层图案可以具有沟槽。可以在沟槽中形成包括第二绝缘材料的支撑层。第二绝缘材料可以具有相对于第一绝缘材料的蚀刻选择性。可以在第一模层图案和支撑层图案上形成第二模层。可以通过第二模具层和第一模具层图案形成下部电极。下电极可以与支撑层图案的侧壁接触。可以去除第一模层图案和第二模层。电介质层和上电极可以形成在下电极和支撑层图案上。

7. 发明申请

US20080096393A1 Apparatus and method of etching a semiconductor substrate 审中-公开
标题翻译：蚀刻半导体衬底的设备和方法
公开(公告)号：US20080096393A1
公开(公告)日：2008-04-24
申请号：US11907081
申请日：2007-10-09
申请人： In-Gi Kim , Dae-Hyuk Chung , Dae-Hyuk Kang
发明人： In-Gi Kim , Dae-Hyuk Chung , Dae-Hyuk Kang
IPC分类号： H01L21/461
CPC分类号： H01L21/31111 , H01L21/67086 , H01L21/76224
摘要： An apparatus for etching a semiconductor substrate may include a bath, a reaction preventing layer, and a nozzle. The bath may receive a chemical solution. Grooves may be formed at the inner wall of the bath. The reaction preventing layer may be formed on the inner wall and in the grooves of the bath to reduce or prevent a chemical reaction between the chemical solution and the bath. The nozzle may supply the chemical solution to the bath. In a method of etching a semiconductor substrate, the semiconductor substrate having trench structures and an insulation layer pattern may be prepared. The semiconductor substrate may then be dipped into the bath having the reaction preventing layer in which the chemical solution is received. The semiconductor substrate may be reacted with the chemical solution by blocking the chemical reaction between the chemical solution and the bath to etch the insulation layer pattern and the trench structure at a uniform rate.
摘要翻译：用于蚀刻半导体衬底的设备可以包括浴，反应防止层和喷嘴。浴可以接受化学溶液。槽可以形成在浴的内壁。反应防止层可以形成在浴的内壁和凹槽中，以减少或防止化学溶液和浴之间的化学反应。喷嘴可以将化学溶液供应到浴中。在蚀刻半导体衬底的方法中，可以制备具有沟槽结构和绝缘层图案的半导体衬底。然后将半导体衬底浸入具有接收化学溶液的反应防止层的浴中。半导体衬底可以通过阻止化学溶液和浴之间的化学反应与化学溶液反应，以均匀的速率蚀刻绝缘层图案和沟槽结构。

8. 发明授权

US08110499B2 Method of forming a contact structure 有权
标题翻译：形成接触结构的方法
公开(公告)号：US08110499B2
公开(公告)日：2012-02-07
申请号：US12437390
申请日：2009-05-07
申请人： Dae-Hyuk Kang , Young-Hoo Kim , Chang-Ki Hong , Kun-Tack Lee , Jae-Dong Lee , Dae-Hong Eom , Jeong-Nam Han
发明人： Dae-Hyuk Kang , Young-Hoo Kim , Chang-Ki Hong , Kun-Tack Lee , Jae-Dong Lee , Dae-Hong Eom , Jeong-Nam Han
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/76814 , H01L21/76846 , H01L21/76855 , H01L23/485 , H01L27/24 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.
摘要翻译：可以在具有接触区域的物体上形成绝缘层。绝缘层可以被部分蚀刻以形成暴露接触区域的开口。可以在暴露的接触区域上形成包括硅和氧的材料层。可以在包括硅和氧的材料层上形成金属层。包括硅和氧的材料层可以与金属层反应，以至少在接触区域上形成金属氧化物硅化物层。可以在金属氧化物硅化物层上形成导电层以填充开口。

9. 发明申请

US20110306197A1 Methods of Manufacturing Semiconductor Devices 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20110306197A1
公开(公告)日：2011-12-15
申请号：US13156729
申请日：2011-06-09
申请人： Young-Hoo Kim , Bo-Un Yoon , Kun-Tack Lee , Dae-Hyuk Kang , Im-Soo Park
发明人： Young-Hoo Kim , Bo-Un Yoon , Kun-Tack Lee , Dae-Hyuk Kang , Im-Soo Park
IPC分类号： H01L21/3205
CPC分类号： H01L28/82
摘要： Method of manufacturing semiconductor device are provided including forming an insulation layer having a pad on a substrate; forming an etch stop layer on the insulation layer and the pad; forming a mold structure having at least one mold layer on the etch stop layer; forming a first supporting layer on the mold structure; etching the first supporting layer and the mold structure to form a first opening exposing the etch stop layer; forming a spacer on a sidewall of the first opening; etching the etch stop layer using the spacer as an etching mask to form a second opening, different from the first opening, exposing a first portion of the pad having a first associated area; etching the etch stop layer using the spacer as an etching mask to form a third opening exposing a second portion of the pad having a second associated area, the second associated area being larger than the first associated area; and etching the mold structure to form a fourth opening having a width larger than a width of the third opening.
摘要翻译：提供制造半导体器件的方法，包括在衬底上形成具有衬垫的绝缘层; 在所述绝缘层和所述焊盘上形成蚀刻停止层; 形成在所述蚀刻停止层上具有至少一个模制层的模具结构; 在模具结构上形成第一支撑层; 蚀刻第一支撑层和模具结构以形成暴露蚀刻停止层的第一开口; 在所述第一开口的侧壁上形成间隔件; 使用所述间隔物作为蚀刻掩模来蚀刻所述蚀刻停止层，以形成不同于所述第一开口的第二开口，暴露所述焊盘的具有第一相关区域的第一部分; 使用所述间隔物作为蚀刻掩模来蚀刻所述蚀刻停止层，以形成暴露所述焊盘的具有第二相关区域的第二部分的第三开口，所述第二相关区域大于所述第一相关区域; 并且蚀刻所述模具结构以形成宽度大于所述第三开口的宽度的第四开口。

10. 发明申请

US20110287625A1 METHODS OF FORMING A PATTERN, METHODS OF FORMING A GATE STRUCTURE AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：形成图案的方法，形成门结构的方法和使用该方法制造半导体器件的方法
公开(公告)号：US20110287625A1
公开(公告)日：2011-11-24
申请号：US13079202
申请日：2011-04-04
申请人： Dae-Hyuk Kang , Kun-Tack Lee , Dae-Hong Eom , Bo-Un Yoon , Jeong-Nam Han
发明人： Dae-Hyuk Kang , Kun-Tack Lee , Dae-Hong Eom , Bo-Un Yoon , Jeong-Nam Han
IPC分类号： H01L21/336
CPC分类号： H01L21/28123 , H01L21/3081 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/11524 , H01L29/40114
摘要： A method of forming a pattern in a semiconductor device includes forming an etching object layer on a substrate, the etching object layer is an oxide that is substantially free of impurities. A mask is formed on the etching object layer, the mask is an oxide that includes impurities. The etching object layer is patterned using the mask as an etching mask and then the mask is removed. The mask is removed using an etchant having an etching selectivity to an oxide that is substantially free of impurities and an oxide that includes impurities during removing of the mask to limit damage to the patterned etching object layer during removal of the mask.
摘要翻译：在半导体器件中形成图案的方法包括在基板上形成蚀刻对象层，蚀刻对象层是基本上不含杂质的氧化物。在蚀刻对象层上形成掩模，掩模是包含杂质的氧化物。使用掩模将蚀刻对象层图案化为蚀刻掩模，然后去除掩模。使用具有对基本上不含杂质的氧化物的蚀刻选择性的蚀刻剂去除掩模，以及在除去掩模期间包括杂质的氧化物，以限制在去除掩模期间对图案化的蚀刻对象层的损伤。

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