专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08551288B2 Apparatus and method for removing a photoresist structure from a substrate 有权
标题翻译：从基板去除光致抗蚀剂结构的设备和方法
公开(公告)号：US08551288B2
公开(公告)日：2013-10-08
申请号：US12213859
申请日：2008-06-25
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/312
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.
摘要翻译：在用于从基板去除光致抗蚀剂结构的装置和方法中，用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。喷头包括具有壁并构造成接收水蒸气的第一空间，以及连接到第一空间的第二空间，使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。可以加热喷头以蒸发第一空间的给定表面上的液态水。

2. 发明申请

US20080096393A1 Apparatus and method of etching a semiconductor substrate 审中-公开
标题翻译：蚀刻半导体衬底的设备和方法
公开(公告)号：US20080096393A1
公开(公告)日：2008-04-24
申请号：US11907081
申请日：2007-10-09
申请人： In-Gi Kim , Dae-Hyuk Chung , Dae-Hyuk Kang
发明人： In-Gi Kim , Dae-Hyuk Chung , Dae-Hyuk Kang
IPC分类号： H01L21/461
CPC分类号： H01L21/31111 , H01L21/67086 , H01L21/76224
摘要： An apparatus for etching a semiconductor substrate may include a bath, a reaction preventing layer, and a nozzle. The bath may receive a chemical solution. Grooves may be formed at the inner wall of the bath. The reaction preventing layer may be formed on the inner wall and in the grooves of the bath to reduce or prevent a chemical reaction between the chemical solution and the bath. The nozzle may supply the chemical solution to the bath. In a method of etching a semiconductor substrate, the semiconductor substrate having trench structures and an insulation layer pattern may be prepared. The semiconductor substrate may then be dipped into the bath having the reaction preventing layer in which the chemical solution is received. The semiconductor substrate may be reacted with the chemical solution by blocking the chemical reaction between the chemical solution and the bath to etch the insulation layer pattern and the trench structure at a uniform rate.
摘要翻译：用于蚀刻半导体衬底的设备可以包括浴，反应防止层和喷嘴。浴可以接受化学溶液。槽可以形成在浴的内壁。反应防止层可以形成在浴的内壁和凹槽中，以减少或防止化学溶液和浴之间的化学反应。喷嘴可以将化学溶液供应到浴中。在蚀刻半导体衬底的方法中，可以制备具有沟槽结构和绝缘层图案的半导体衬底。然后将半导体衬底浸入具有接收化学溶液的反应防止层的浴中。半导体衬底可以通过阻止化学溶液和浴之间的化学反应与化学溶液反应，以均匀的速率蚀刻绝缘层图案和沟槽结构。

3. 发明授权

US07405164B2 Apparatus and method for removing a photoresist structure from a substrate 有权
公开(公告)号：US07405164B2
公开(公告)日：2008-07-29
申请号：US11488706
申请日：2006-07-19
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

4. 发明申请

US20070020943A1 Apparatus and method for removing a photoresist structure from a substrate 有权
标题翻译：从基板去除光致抗蚀剂结构的设备和方法
公开(公告)号：US20070020943A1
公开(公告)日：2007-01-25
申请号：US11488706
申请日：2006-07-19
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.
摘要翻译：在用于从基板去除光致抗蚀剂结构的装置和方法中，用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。喷头包括具有壁并构造成接收水蒸气的第一空间，以及连接到第一空间的第二空间，使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。可以加热喷头以蒸发第一空间的给定表面上的液态水。

5. 发明申请

US20160315019A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING A COMPOSITION FOR REMOVING PHOTORESIST AND METHODS OF REMOVING PHOTORESIST FROM A SEMICONDUCTOR SUBSTRATE 有权
标题翻译：使用组合物制造光电转换器的半导体器件的制造方法和从半导体衬底去除光电离器的方法
公开(公告)号：US20160315019A1
公开(公告)日：2016-10-27
申请号：US15084536
申请日：2016-03-30
申请人： Jung-Min OH , Mi-Hyun PARK , Hyo-San LEE , Ji-Hoon JEONG , Yong-Sun KO , In-Gi KIM , Na-Rim KIM , Sang-Tae KIM , Seong-Min KIM , Kyong-Ho LEE
发明人： Jung-Min OH , Mi-Hyun PARK , Hyo-San LEE , Ji-Hoon JEONG , Yong-Sun KO , In-Gi KIM , Na-Rim KIM , Sang-Tae KIM , Seong-Min KIM , Kyong-Ho LEE
IPC分类号： H01L21/8238 , H01L21/027 , H01L21/8234 , H01L29/16 , H01L21/311 , H01L21/02 , H01L21/3105 , G03F7/42 , H01L21/266
CPC分类号： G03F7/426 , G03F7/039 , G03F7/42 , G03F7/422 , G03F7/425 , H01L21/266 , H01L21/31133 , H01L21/823814 , H01L21/823828 , H01L29/16
摘要： A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.
摘要翻译：基于组合物的总重量，用于除去光致抗蚀剂的组合物，其包含约0.5重量％至约10重量％的烷基铵氟化物盐; 基于组合物的总重量的约1重量％至约20重量％的量的有机磺酸; 和基于组合物总重量的约70重量％至约98.5重量％的内酯类溶剂。

6. 发明授权

US08128738B2 Method of drying an object and apparatus for performing the same 有权
标题翻译：干燥物体的方法及其执行方法
公开(公告)号：US08128738B2
公开(公告)日：2012-03-06
申请号：US11826368
申请日：2007-07-13
申请人： Kuen-Byul Kim , In-Gi Kim , Dae-Bum Park , Soung-Kil Ryu , Seung-Bu Baek , Seo-Hyun Kim
发明人： Kuen-Byul Kim , In-Gi Kim , Dae-Bum Park , Soung-Kil Ryu , Seung-Bu Baek , Seo-Hyun Kim
IPC分类号： B01D46/00
CPC分类号： H01L21/02057 , H01L21/67034
摘要： In a method of drying an object, a first drying fluid and a second dry fluid may be first heated to form a gas mixture. The gas mixture may be second heated to prevent the mixed gas from condensing. The second heated gas mixture may be filtered to remove impurities from the second heated mixed gas. The filtered mixed gas may be then applied to the object so as to dry the object.
摘要翻译：在干燥物体的方法中，可以首先加热第一干燥流体和第二干燥流体以形成气体混合物。气体混合物可以被第二次加热以防止混合气体冷凝。可以过滤第二加热气体混合物以从第二加热混合气体中除去杂质。然后将过滤的混合气体施加到物体上以干燥物体。

7. 发明申请

US20080264566A1 Apparatus and method for removing a photoresist structure from a substrate 有权
标题翻译：从基板去除光致抗蚀剂结构的设备和方法
公开(公告)号：US20080264566A1
公开(公告)日：2008-10-30
申请号：US12213859
申请日：2008-06-25
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/306
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.
摘要翻译：在用于从基板去除光致抗蚀剂结构的装置和方法中，用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。喷头包括具有壁并构造成接收水蒸气的第一空间，以及连接到第一空间的第二空间，使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。可以加热喷头以蒸发第一空间的给定表面上的液态水。

8. 发明申请

US20080047576A1 SINGLE-SUBSTRATE TYPE APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
标题翻译：用于处理基板的单基板类型设备
公开(公告)号：US20080047576A1
公开(公告)日：2008-02-28
申请号：US11844241
申请日：2007-08-23
申请人： Young-Ok KIM , Chang-Ki HONG , Kun-Tack LEE , In-Gi KIM , Woo-Gwan SHIM , Jeong-Nam HAN , Kang-Youn LEE
发明人： Young-Ok KIM , Chang-Ki HONG , Kun-Tack LEE , In-Gi KIM , Woo-Gwan SHIM , Jeong-Nam HAN , Kang-Youn LEE
IPC分类号： B08B3/12 , B08B3/10
CPC分类号： H01L21/67057 , H01L21/67034
摘要： In a single-substrate type apparatus for processing a substrate, the apparatus includes a chamber, a bottom panel, a solution supplying part and a substrate holder. The chamber has an upper portion and a lower portion. The bottom panel is detachably connected to the lower portion. The solution supplying part is connected to the bottom panel to supply a processing solution to the substrate in the chamber. The substrate holder provides the substrate into the chamber, the substrate holder holding both side portions of the substrate such that the substrate is vertically arranged.
摘要翻译：在用于处理基板的单基板型装置中，该装置包括室，底板，溶液供应部和基板保持件。腔室具有上部和下部。底板可拆卸地连接到下部。溶液供应部分连接到底板，以将处理溶液供应到室中的基板。衬底保持器将衬底提供到腔室中，衬底保持器保持衬底的两侧部分，使得衬底垂直布置。

9. 发明申请

US20080022854A1 Method of drying an object and apparatus for performing the same 有权
标题翻译：干燥物体的方法及其执行方法
公开(公告)号：US20080022854A1
公开(公告)日：2008-01-31
申请号：US11826368
申请日：2007-07-13
申请人： Kuen-Byul Kim , In-Gi Kim , Dae-Bum Park , Soung-Kil Ryu , Seung-Bu Baek , Seo-Hyun Kim
发明人： Kuen-Byul Kim , In-Gi Kim , Dae-Bum Park , Soung-Kil Ryu , Seung-Bu Baek , Seo-Hyun Kim
IPC分类号： B01D46/00
CPC分类号： H01L21/02057 , H01L21/67034
摘要： In a method of drying an object, a first drying fluid and a second dry fluid may be first heated to form a gas mixture. The gas mixture may be second heated to prevent the mixed gas from condensing. The second heated gas mixture may be filtered to remove impurities from the second heated mixed gas. The filtered mixed gas may be then applied to the object so as to dry the object.
摘要翻译：在干燥物体的方法中，可以首先加热第一干燥流体和第二干燥流体以形成气体混合物。气体混合物可以被第二次加热以防止混合气体冷凝。可以过滤第二加热气体混合物以从第二加热混合气体中除去杂质。然后将过滤的混合气体施加到物体上以干燥物体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式