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1. 发明申请

US20080096393A1 Apparatus and method of etching a semiconductor substrate 审中-公开
标题翻译：蚀刻半导体衬底的设备和方法
公开(公告)号：US20080096393A1
公开(公告)日：2008-04-24
申请号：US11907081
申请日：2007-10-09
申请人： In-Gi Kim , Dae-Hyuk Chung , Dae-Hyuk Kang
发明人： In-Gi Kim , Dae-Hyuk Chung , Dae-Hyuk Kang
IPC分类号： H01L21/461
CPC分类号： H01L21/31111 , H01L21/67086 , H01L21/76224
摘要： An apparatus for etching a semiconductor substrate may include a bath, a reaction preventing layer, and a nozzle. The bath may receive a chemical solution. Grooves may be formed at the inner wall of the bath. The reaction preventing layer may be formed on the inner wall and in the grooves of the bath to reduce or prevent a chemical reaction between the chemical solution and the bath. The nozzle may supply the chemical solution to the bath. In a method of etching a semiconductor substrate, the semiconductor substrate having trench structures and an insulation layer pattern may be prepared. The semiconductor substrate may then be dipped into the bath having the reaction preventing layer in which the chemical solution is received. The semiconductor substrate may be reacted with the chemical solution by blocking the chemical reaction between the chemical solution and the bath to etch the insulation layer pattern and the trench structure at a uniform rate.
摘要翻译：用于蚀刻半导体衬底的设备可以包括浴，反应防止层和喷嘴。浴可以接受化学溶液。槽可以形成在浴的内壁。反应防止层可以形成在浴的内壁和凹槽中，以减少或防止化学溶液和浴之间的化学反应。喷嘴可以将化学溶液供应到浴中。在蚀刻半导体衬底的方法中，可以制备具有沟槽结构和绝缘层图案的半导体衬底。然后将半导体衬底浸入具有接收化学溶液的反应防止层的浴中。半导体衬底可以通过阻止化学溶液和浴之间的化学反应与化学溶液反应，以均匀的速率蚀刻绝缘层图案和沟槽结构。

2. 发明授权

US08551288B2 Apparatus and method for removing a photoresist structure from a substrate 有权
标题翻译：从基板去除光致抗蚀剂结构的设备和方法
公开(公告)号：US08551288B2
公开(公告)日：2013-10-08
申请号：US12213859
申请日：2008-06-25
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/312
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.
摘要翻译：在用于从基板去除光致抗蚀剂结构的装置和方法中，用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。喷头包括具有壁并构造成接收水蒸气的第一空间，以及连接到第一空间的第二空间，使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。可以加热喷头以蒸发第一空间的给定表面上的液态水。

3. 发明授权

US07405164B2 Apparatus and method for removing a photoresist structure from a substrate 有权
公开(公告)号：US07405164B2
公开(公告)日：2008-07-29
申请号：US11488706
申请日：2006-07-19
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

4. 发明申请

US20070020943A1 Apparatus and method for removing a photoresist structure from a substrate 有权
标题翻译：从基板去除光致抗蚀剂结构的设备和方法
公开(公告)号：US20070020943A1
公开(公告)日：2007-01-25
申请号：US11488706
申请日：2006-07-19
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.
摘要翻译：在用于从基板去除光致抗蚀剂结构的装置和方法中，用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。喷头包括具有壁并构造成接收水蒸气的第一空间，以及连接到第一空间的第二空间，使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。可以加热喷头以蒸发第一空间的给定表面上的液态水。

5. 发明申请

US20080264566A1 Apparatus and method for removing a photoresist structure from a substrate 有权
标题翻译：从基板去除光致抗蚀剂结构的设备和方法
公开(公告)号：US20080264566A1
公开(公告)日：2008-10-30
申请号：US12213859
申请日：2008-06-25
申请人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
发明人： In-Gi Kim , In-Seak Hwang , Dae-Hyuk Chung , Kyoung-Hwan Kim
IPC分类号： H01L21/306
CPC分类号： H01L21/31138 , G03F7/42 , H01J37/3244
摘要： In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.
摘要翻译：在用于从基板去除光致抗蚀剂结构的装置和方法中，用于接收基板的室包括用于将水蒸气和臭氧气体的混合物均匀分布到基板上的喷头。喷头包括具有壁并构造成接收水蒸气的第一空间，以及连接到第一空间的第二空间，使得水蒸汽被供应到第一空间的一个或多个壁上并部分地冷凝成液态水。臭氧气体和没有液态水的水蒸汽可以供应到第二空间以在其中形成混合物。可以加热喷头以蒸发第一空间的给定表面上的液态水。

6. 发明授权

US07527921B2 Method of treating and removing a photoresist pattern and method of manufacturing a semiconductor device using the same 有权
标题翻译：处理和除去光致抗蚀剂图案的方法和使用其制造半导体器件的方法
公开(公告)号：US07527921B2
公开(公告)日：2009-05-05
申请号：US11475154
申请日：2006-06-27
申请人： Dae-Hyuk Chung , Dae-Keun Kang , Se-Ho Cha
发明人： Dae-Hyuk Chung , Dae-Keun Kang , Se-Ho Cha
IPC分类号： G03C5/18 , G03C5/26 , B08B3/00
CPC分类号： G03F7/423 , G03F7/422 , H01L21/31133 , H01L21/31138 , H01L27/10814 , H01L27/10855 , H01L28/90
摘要： Example embodiments of the present invention relate to methods of treating and removing a photoresist pattern and a method of manufacturing a semiconductor device using the same. Other example embodiments of the present invention relate to a method of treating a photoresist pattern and a method of removing a photoresist pattern formed using a photoresist composition suitable for argon fluoride (ArF). In a method of removing a photoresist pattern, an ozone vapor including a water vapor and an ozone gas may be provided onto the photoresist pattern to remove a hydrophobic group from a photoresist resin included in the photoresist pattern. A cleaning solution may be provided to make the photoresist pattern water-soluble. A cleaning process may be performed on the photoresist pattern to remove the photoresist pattern. The photoresist pattern may be effectively removed without an increased processing time and/or damage to a substrate.
摘要翻译：本发明的示例性实施方案涉及处理和除去光致抗蚀剂图案的方法以及使用其制造半导体器件的方法。本发明的其它示例性实施方案涉及一种处理光致抗蚀剂图案的方法和使用适用于氟化氩（ArF）的光致抗蚀剂组合物形成的光致抗蚀剂图案的方法。在去除光致抗蚀剂图案的方法中，可以在光致抗蚀剂图案上提供包括水蒸气和臭氧气体的臭氧蒸气以从包含在光致抗蚀剂图案中的光致抗蚀剂树脂除去疏水基团。可以提供清洁溶液以使光致抗蚀剂图案具有水溶性。可以在光致抗蚀剂图案上进行清洁处理以除去光致抗蚀剂图案。可以有效地去除光致抗蚀剂图案，而不会增加处理时间和/或对基板的损坏。

7. 发明申请

US20100301263A1 Slurry composition for a chemical mechanical polishing process and method of manufacturing a semiconductor device using the slurry composition 审中-公开
公开(公告)号：US20100301263A1
公开(公告)日：2010-12-02
申请号：US12805624
申请日：2010-08-10
申请人： Choong-Kee Seong , Dae-Hyuk Chung , Myang-Sik Han
发明人： Choong-Kee Seong , Dae-Hyuk Chung , Myang-Sik Han
IPC分类号： C09K13/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L27/115 , H01L27/11521
摘要： A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.

8. 发明授权

US07799687B2 Slurry composition for a chemical mechanical polishing process and method of manufacturing a semiconductor device using the slurry composition 有权
标题翻译：用于化学机械抛光工艺的浆料组合物和使用该浆料组合物制造半导体器件的方法
公开(公告)号：US07799687B2
公开(公告)日：2010-09-21
申请号：US11907105
申请日：2007-10-09
申请人： Choong-Kee Seong , Dae-Hyuk Chung , Myang-Sik Han
发明人： Choong-Kee Seong , Dae-Hyuk Chung , Myang-Sik Han
IPC分类号： H01L21/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L27/115 , H01L27/11521
摘要： A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.
摘要翻译：提供了一种用于化学机械抛光工艺的浆料组合物和使用该浆料组合物制造半导体存储器件的方法。浆料组合物可以包括约0.001重量％至约5重量％的二氧化铈磨料，约0.001重量％至约0.1重量％的吸附在形成多晶硅层上的钝化层的多晶硅层上的非离子表面活性剂，具有三嵌段共聚物的化学结构的非离子表面活性剂包括第一聚环氧乙烷嵌段，聚环氧丙烷嵌段和第二聚环氧乙烷嵌段以及剩余的水。

9. 发明申请

US20080085602A1 Slurry composition for a chemical mechanical polishing process and method of manufacturing a semiconductor device using the slurry composition 有权
标题翻译：用于化学机械抛光工艺的浆料组合物和使用该浆料组合物制造半导体器件的方法
公开(公告)号：US20080085602A1
公开(公告)日：2008-04-10
申请号：US11907105
申请日：2007-10-09
申请人： Choong-Kee Seong , Dae-Hyuk Chung , Myang-Sik Han
发明人： Choong-Kee Seong , Dae-Hyuk Chung , Myang-Sik Han
IPC分类号： H01L21/302 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L27/115 , H01L27/11521
摘要： A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a ceria abrasive, about 0.001 percent by weight to about 0.1 percent by weight of a nonionic surfactant adsorbed onto a polysilicon layer forming a passivation layer on the polysilicon layer, the nonionic surfactant having a chemical structure of a triblock copolymer including a first polyethylene oxide block, a polypropylene oxide block and a second polyethylene oxide block and a remainder of water.
摘要翻译：提供了一种用于化学机械抛光工艺的浆料组合物和使用该浆料组合物制造半导体存储器件的方法。浆料组合物可以包括约0.001重量％至约5重量％的二氧化铈磨料，约0.001重量％至约0.1重量％的吸附在形成多晶硅层上的钝化层的多晶硅层上的非离子表面活性剂，具有三嵌段共聚物的化学结构的非离子表面活性剂包括第一聚环氧乙烷嵌段，聚环氧丙烷嵌段和第二聚环氧乙烷嵌段以及剩余的水。

10. 发明授权

US08723297B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US08723297B2
公开(公告)日：2014-05-13
申请号：US13177984
申请日：2011-07-07
申请人： Yoon-Ho Son , Mong-Sup Lee , In-Seak Hwang , Dae-Hyuk Chung , Suk-Hun Choi , Sang-Jun Lee
发明人： Yoon-Ho Son , Mong-Sup Lee , In-Seak Hwang , Dae-Hyuk Chung , Suk-Hun Choi , Sang-Jun Lee
IPC分类号： H01L27/115
CPC分类号： H01L27/10888 , H01L21/02057 , H01L21/02063 , H01L21/30608 , H01L21/76805 , H01L21/76814 , H01L21/76897 , H01L23/485 , H01L27/10814 , H01L27/10855 , H01L29/1037 , H01L29/41766 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device having an enlarged contact area between a contact structure and a substrate, the substrate may include a first region on which a conductive structure is arranged and a second region defining the first region. The first region may include a multi-faced polyhedral recess of which at least one of the sidewalls is slanted with respect to a surface of the substrate. An insulation layer may be formed on the substrate to a thickness that is sufficient to cover the conductive structure. The insulation layer has a contact hole that may be communicated with the recess. The active region of the substrate is exposed through the contact hole. A conductive pattern is positioned in the recess and the contact hole. Accordingly, the contact resistance at the active region of the substrate may be kept to a relatively low value even though the gap distances and line width of pattern lines are reduced.
摘要翻译：在具有接触结构和衬底之间的扩大的接触面积的半导体器件中，衬底可以包括布置有导电结构的第一区域和限定第一区域的第二区域。第一区域可以包括多面多面体凹部，其中至少一个侧壁相对于基底的表面倾斜。可以在衬底上形成足够覆盖导电结构的厚度的绝缘层。绝缘层具有可与凹部连通的接触孔。基板的有源区域通过接触孔露出。导电图案位于凹槽和接触孔中。因此，即使图案线的间隙距离和线宽减小，也可以将基板的有源区域的接触电阻保持在较低的值。

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