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1. 发明授权

US5283799A Semiconductor laser with a saturable absorber 失效
标题翻译：具有饱和吸收体的半导体激光器
公开(公告)号：US5283799A
公开(公告)日：1994-02-01
申请号：US841712
申请日：1992-02-26
申请人： Joel Jacquet , Denis Leclerc , Jean-Louis Lievin , Didier Sigogne
发明人： Joel Jacquet , Denis Leclerc , Jean-Louis Lievin , Didier Sigogne
IPC分类号： H01S5/00 , G02F3/02 , H01S3/106 , H01S5/026 , H01S5/042 , H01S5/065 , H01S5/227 , H01S3/19
CPC分类号： H01S3/1061 , G02F3/026 , H01S5/227 , H01S5/026
摘要： In this laser two successive sections of a light guide form a light amplifier (S1) and a saturable absorber (S2). In the invention a passive section (S3) of the guide follows the absorber. The invention is applicable especially to processing an optical signal.
摘要翻译：在该激光器中，光导体的两个连续部分形成光放大器（S1）和可饱和吸收器（S2）。在本发明中，引导件的被动部分（S3）遵循吸收体。本发明特别适用于处理光信号。

2. 发明授权

US4920542A Tunable semiconductor laser 失效
标题翻译：可调谐半导体激光器
公开(公告)号：US4920542A
公开(公告)日：1990-04-24
申请号：US351893
申请日：1989-03-22
申请人： Philippe Brosson , Joel Jacquet , Claude Artigue , Denis Leclerc , Jacques Benoit
发明人： Philippe Brosson , Joel Jacquet , Claude Artigue , Denis Leclerc , Jacques Benoit
IPC分类号： H01S3/098 , H01S5/00 , H01S5/042 , H01S5/0625 , H01S5/10 , H01S5/12
CPC分类号： H01S5/10 , H01S5/06258 , H01S5/06256 , H01S5/106 , H01S5/12 , H01S5/1228
摘要： A tunable multisection laser of the invention includes an active layer (C2) which is thicker in a phase tuning section (S3) and in a grating section (S2) including a Bragg distributed reflector (R) having a controllable equivalent pitch than it is in a light amplification section (S1). The invention is particularly applicable to making components for telecommunications by means of optical fibers.
摘要翻译：本发明的可调谐多分激光器包括在相位调谐部分（S3）中较厚的有源层（C2）和包括具有等于可控等效间距的布拉格分布反射器（R）的光栅部分（S2）光放大部（S1）。本发明特别适用于通过光纤制造用于电信的部件。

3. 发明授权

US6148015A Device, in particular a semiconductor device, for processing two waves, in particular light waves 失效
标题翻译：器件，特别是半导体器件，用于处理两个波，特别是光波
公开(公告)号：US6148015A
公开(公告)日：2000-11-14
申请号：US987382
申请日：1997-12-09
申请人： Joel Jacquet , Salim Gurib , Francis Doukhan , Hugues Le Quellec
发明人： Joel Jacquet , Salim Gurib , Francis Doukhan , Hugues Le Quellec
IPC分类号： G02F1/025 , G02B6/12 , G02B6/42 , H01S5/00 , H01S5/026 , H01S5/0683 , H01S3/19 , H01L29/06
CPC分类号： H01S5/0262 , G02B6/12004 , G02B6/4246 , H01S5/0264 , H01S5/0683
摘要： A common InP semiconductor substrate device includes a laser emitter H1 for emitting waves having a first wavelength such as 1,300 nm, a photodiode H2 for receiving and detecting waves having a second wavelength such as 1,550 nm, and a separator G absorbing the waves having the first wavelength, the separator being interposed between the laser emitter H1 and the photodiode G for protecting the photodiode against the waves having the first wavelength. An absorption measurement mechanism Q delivers a signal iG representative of the power of the waves absorbed by the separator G, to make it possible to regulate operation of the laser emitter H1. The semiconductor substrate device is particularly applicable to implementing end devices to be installed on subscriber premises for subscribers to optical fiber interactive local area networks.
摘要翻译：普通的InP半导体衬底器件包括用于发射第一波长例如1,300nm的波长的激光发射器H1，用于接收和检测具有第一波长例如1,550nm的波长的光电二极管H2，以及吸收具有第一波长波长，分离器介于激光发射器H1和光电二极管G之间，用于保护光电二极管免受具有第一波长的波。吸收测量机构Q传送表示由分离器G吸收的波的功率的信号iG，使得可以调节激光发射器H1的操作。半导体衬底器件特别适用于实现用于光纤交互式局域网的用户的用户住宅上安装的终端设备。

4. 发明授权

US4532824A Automobile automatic transmission control device 失效
标题翻译：汽车自动变速器控制装置
公开(公告)号：US4532824A
公开(公告)日：1985-08-06
申请号：US456295
申请日：1983-01-06
申请人： Jean-Michel Lamy , Joel Jacquet
发明人： Jean-Michel Lamy , Joel Jacquet
IPC分类号： B60K20/02 , F16H59/02 , F16H59/10 , F16H61/00 , G05G1/04 , G05G5/00 , G05G5/02 , G05G5/03 , G05G5/14
CPC分类号： F16H59/10 , G05G5/03 , F16H2059/0282 , Y10T74/20098 , Y10T74/20582 , Y10T74/20702
摘要： An automobile automatic transmission control device consists of a sector fixed to a vehicle. A control lever is pivoted to the sector about a fixed axis. A plurality of lockout notches are formed on an edge of the sector along a locus centered on said fixed axis. A plurality of self-locking notches are formed in said sector about a locus centered on said fixed axis. The control lever is provided with a rod biased into engagement with the lockout notches so as to prevent the unintentional pivoting of the lever. The control lever is also provided with a plurality of self-locking elements which cooperate with the self-locking notches to establish transmission selection positions. The rod can be moved out of engagement with the lockout notches by engagement of a trigger release mounted on one end of the lever.
摘要翻译：汽车自动变速器控制装置由固定在车辆上的部件组成。控制杆围绕固定的轴线枢转到扇形。沿着以所述固定轴为中心的轨迹，在扇区的边缘上形成多个锁定缺口。在所述扇区中围绕围绕所述固定轴线的轨迹形成多个自锁凹口。控制杆设置有与锁定凹口接合的杆，以防止杆的无意枢转。控制杆还设置有多个自锁元件，其与自锁凹口配合以建立变速器选择位置。通过安装在杠杆的一端的扳机释放器的接合，杆可以与锁定槽口移动离开接合。

5. 发明授权

US06744941B2 Optical wavelength tunable filter 失效
标题翻译：光波长可调滤波器
公开(公告)号：US06744941B2
公开(公告)日：2004-06-01
申请号：US10414157
申请日：2003-04-16
申请人： Sabry Khalfallah , Joel Jacquet
发明人： Sabry Khalfallah , Joel Jacquet
IPC分类号： G02B612
CPC分类号： G02B6/29358 , G02B5/20 , G02B6/29395
摘要： The wavelength tunable optical filter (1) comprises a resonant cavity (4) delimited by two opposite reflective elements (8, 8′) which are not wavelength selective, and a reflector (7) external to the cavity (4). The external reflector (7) exhibits transmission peaks for an integer number N of optical frequencies and the Fabry-Perot cavity (4) delimiting a phase tuning section (11) is sized so that the distance between the optical frequencies of any two resonant modes of the cavity (4) is never equal to the difference between the optical frequencies of any two transmission peaks of the external reflector (7).
摘要翻译：波长可调谐滤光器（1）包括由不具有波长选择性的两个相对的反射元件（8,8'）界定的谐振腔（4）和在空腔（4）外部的反射器（7）。外部反射器（7）表现出整数N个光学频率的传输峰值，限定相位调谐部分（11）的法布里 - 珀罗腔（4）的尺寸设定为使得空腔的任何两个谐振模式的光频率 4）不等于外部反射器（7）的任何两个透射峰值的光学频率之间的差异。

6. 发明授权

US5854088A Method of manufacturing a surface-emitting laser 失效
标题翻译：制造表面发射激光器的方法
公开(公告)号：US5854088A
公开(公告)日：1998-12-29
申请号：US885843
申请日：1997-06-30
申请人： Antonina Plais , Paul Salet , Joel Jacquet , Francis Poingt , Estelle Derouin
发明人： Antonina Plais , Paul Salet , Joel Jacquet , Francis Poingt , Estelle Derouin
IPC分类号： H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01L21/00
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/18316 , H01S5/18338 , H01S5/2081 , H01S5/209 , H01S5/3202
摘要： In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps: forming an undercut layer, at least one growth step on the undercut layer, forming a mesa defining the shape and the location of the top mirror and exposing the undercut layer on its vertical walls, and controlled lateral etching of the undercut layer. Applications include the fabrication of a semiconductor laser on a III-V (e.g. InP or GaAs) substrate.
摘要翻译：在制造表面发射激光器的方法中，为了确保限定激光器的谐振腔的镜子的良好的电气限制和良好的平坦度，通过执行以下步骤形成电限制层：形成底切层，至少一个在底切层上形成生长步骤，形成限定上反射镜的形状和位置的台面，并在其垂直壁上暴露底切层，以及控制底切层的横向蚀刻。应用包括在III-V（例如InP或GaAs）衬底上制造半导体激光器。

7. 发明授权

US5747366A Method of fabricating a surface emitting semiconductor laser 失效
标题翻译：制造表面发射半导体激光器的方法
公开(公告)号：US5747366A
公开(公告)日：1998-05-05
申请号：US773355
申请日：1996-12-26
申请人： Fran.cedilla.ois Brillouet , Leon Goldstein , Joel Jacquet , Antonina Plais , Paul Salet
发明人： Fran.cedilla.ois Brillouet , Leon Goldstein , Joel Jacquet , Antonina Plais , Paul Salet
IPC分类号： H01S5/00 , H01S5/183 , H01L21/00 , H01S3/19
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/18311 , H01S5/18369
摘要： In a method of fabricating a surface emitting semiconductor layer, to achieve good electrical confinement and good flatness of the mirrors delimiting the resonant cavity of the laser, an electrical confinement layer is made by growing a localized aluminum alloy layer on the active layer, except for an opening area on top of which the mirror is to be formed. After epitaxial regrowth, the alloy layer is oxidized laterally. Applications include the fabrication of semiconductor lasers on III-V substrates such as InP and GaAs.
摘要翻译：在制造表面发射半导体层的方法中，为了实现良好的电气限制和限定激光器的谐振腔的镜子的良好的平坦度，通过在有源层上生长局部铝合金层来制造电限制层，除了在其上形成反射镜的开口区域。在外延再生后，合金层被横向氧化。应用包括在诸如InP和GaAs的III-V衬底上制造半导体激光器。

8. 发明授权

US6052398A Surface emitting semiconductor laser 失效
标题翻译：表面发射半导体激光器
公开(公告)号：US6052398A
公开(公告)日：2000-04-18
申请号：US53704
申请日：1998-04-02
申请人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
发明人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18305 , H01S2302/00 , H01S5/18308 , H01S5/18394 , H01S5/3095
摘要： Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.
摘要翻译：激光器的两个半导体层形成隧道结，能够使电流泵浦激光从N掺杂半导体布拉格反射镜传递到属于光放大结构的P掺杂注入层。布拉格反射镜与具有相同掺杂的相同类型的另一个反射镜配合，以在激光器的光腔中包括所述结构。在一个变型中，隧道结可以被埋置和定位，以便构成用于所述泵送电流的约束装置。激光可用于光纤通信网络。

9. 发明授权

US6046065A Process for fabricating a semiconductor opto-electronic component and component and matrix of components fabricated by this process 失效
标题翻译：用于制造半导体光电元件的方法以及通过该工艺制造的元件的元件和基体
公开(公告)号：US6046065A
公开(公告)日：2000-04-04
申请号：US928647
申请日：1997-09-12
申请人： Leon Goldstein , Fran.cedilla.ois Brillouet , Cathrine Fortin , Joel Jacquet , Paul Salet , Jean Luc Lafragette , Antonina Plais
发明人： Leon Goldstein , Fran.cedilla.ois Brillouet , Cathrine Fortin , Joel Jacquet , Paul Salet , Jean Luc Lafragette , Antonina Plais
IPC分类号： G02F1/015 , H01L21/203 , H01L33/00 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/183 , H01L21/02
CPC分类号： H01S5/18305 , H01L33/0062 , H01S2302/00 , H01S5/0207 , H01S5/0215 , H01S5/02476 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18369
摘要： An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.
摘要翻译：使用外延沉积工艺将可与砷化镓晶格匹配的材料沉积到磷化铟晶片上。这种材料形成变质层。这种变质层构成两个半导体布拉格反射镜，以形成矩阵的表面发射激光器的谐振腔。该矩阵由硅支持整合。应用包括光通信。

10. 发明授权

US5652812A Integrated opto-electronic component 失效
标题翻译：集成光电组件
公开(公告)号：US5652812A
公开(公告)日：1997-07-29
申请号：US691327
申请日：1996-08-02
申请人： Salim Gurib , Joel Jacquet , Christine Labourie , Elisabeth Gaumont-Goarin
发明人： Salim Gurib , Joel Jacquet , Christine Labourie , Elisabeth Gaumont-Goarin
IPC分类号： H01S5/00 , G02B6/12 , H01S5/042 , H01S5/0625 , H01S5/50 , H04B10/135
CPC分类号： H04B10/2572 , G02B6/12004 , H01S5/06256 , H01S5/5009
摘要： An integrated opto-electronic component includes an amplifying segment coupled to a tuning segment to provide a wavelength tunable laser oscillator function insensitive to the polarization of optical waves that it receives. The amplifying segment is designed to be insensitive to polarization. The tuning segment includes a Bragg grating and a waveguide dimensioned to procure transversely monomode laser emission with rectilinear polarization. Applications include wavelength converters and stabilized gain amplifiers, in particular for optical transmission.
摘要翻译：集成光电子部件包括耦合到调谐段的放大段，以提供对其接收的光波的偏振不敏感的波长可调激光振荡器功能。放大段被设计为对极化不敏感。调谐段包括布拉格光栅和波导，其尺寸用于获得具有直线偏振的横向单模激光发射。应用包括波长转换器和稳定增益放大器，特别是用于光传输。

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