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1. 发明授权

US6046065A Process for fabricating a semiconductor opto-electronic component and component and matrix of components fabricated by this process 失效
标题翻译：用于制造半导体光电元件的方法以及通过该工艺制造的元件的元件和基体
公开(公告)号：US6046065A
公开(公告)日：2000-04-04
申请号：US928647
申请日：1997-09-12
申请人： Leon Goldstein , Fran.cedilla.ois Brillouet , Cathrine Fortin , Joel Jacquet , Paul Salet , Jean Luc Lafragette , Antonina Plais
发明人： Leon Goldstein , Fran.cedilla.ois Brillouet , Cathrine Fortin , Joel Jacquet , Paul Salet , Jean Luc Lafragette , Antonina Plais
IPC分类号： G02F1/015 , H01L21/203 , H01L33/00 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/183 , H01L21/02
CPC分类号： H01S5/18305 , H01L33/0062 , H01S2302/00 , H01S5/0207 , H01S5/0215 , H01S5/02476 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18369
摘要： An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.
摘要翻译：使用外延沉积工艺将可与砷化镓晶格匹配的材料沉积到磷化铟晶片上。这种材料形成变质层。这种变质层构成两个半导体布拉格反射镜，以形成矩阵的表面发射激光器的谐振腔。该矩阵由硅支持整合。应用包括光通信。

2. 发明授权

US5747366A Method of fabricating a surface emitting semiconductor laser 失效
标题翻译：制造表面发射半导体激光器的方法
公开(公告)号：US5747366A
公开(公告)日：1998-05-05
申请号：US773355
申请日：1996-12-26
申请人： Fran.cedilla.ois Brillouet , Leon Goldstein , Joel Jacquet , Antonina Plais , Paul Salet
发明人： Fran.cedilla.ois Brillouet , Leon Goldstein , Joel Jacquet , Antonina Plais , Paul Salet
IPC分类号： H01S5/00 , H01S5/183 , H01L21/00 , H01S3/19
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/18311 , H01S5/18369
摘要： In a method of fabricating a surface emitting semiconductor layer, to achieve good electrical confinement and good flatness of the mirrors delimiting the resonant cavity of the laser, an electrical confinement layer is made by growing a localized aluminum alloy layer on the active layer, except for an opening area on top of which the mirror is to be formed. After epitaxial regrowth, the alloy layer is oxidized laterally. Applications include the fabrication of semiconductor lasers on III-V substrates such as InP and GaAs.
摘要翻译：在制造表面发射半导体层的方法中，为了实现良好的电气限制和限定激光器的谐振腔的镜子的良好的平坦度，通过在有源层上生长局部铝合金层来制造电限制层，除了在其上形成反射镜的开口区域。在外延再生后，合金层被横向氧化。应用包括在诸如InP和GaAs的III-V衬底上制造半导体激光器。

3. 发明授权

US5854088A Method of manufacturing a surface-emitting laser 失效
标题翻译：制造表面发射激光器的方法
公开(公告)号：US5854088A
公开(公告)日：1998-12-29
申请号：US885843
申请日：1997-06-30
申请人： Antonina Plais , Paul Salet , Joel Jacquet , Francis Poingt , Estelle Derouin
发明人： Antonina Plais , Paul Salet , Joel Jacquet , Francis Poingt , Estelle Derouin
IPC分类号： H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01L21/00
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/18316 , H01S5/18338 , H01S5/2081 , H01S5/209 , H01S5/3202
摘要： In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps: forming an undercut layer, at least one growth step on the undercut layer, forming a mesa defining the shape and the location of the top mirror and exposing the undercut layer on its vertical walls, and controlled lateral etching of the undercut layer. Applications include the fabrication of a semiconductor laser on a III-V (e.g. InP or GaAs) substrate.
摘要翻译：在制造表面发射激光器的方法中，为了确保限定激光器的谐振腔的镜子的良好的电气限制和良好的平坦度，通过执行以下步骤形成电限制层：形成底切层，至少一个在底切层上形成生长步骤，形成限定上反射镜的形状和位置的台面，并在其垂直壁上暴露底切层，以及控制底切层的横向蚀刻。应用包括在III-V（例如InP或GaAs）衬底上制造半导体激光器。

4. 发明授权

US07167498B2 Multi section electrooptic monolithic component 失效
标题翻译：多段电光整体组件
公开(公告)号：US07167498B2
公开(公告)日：2007-01-23
申请号：US10845772
申请日：2004-05-14
申请人： Franck Mallecot , Christine Chaumont , Joël Jacquet , Arnaud Leroy , Antonina Plais , Joe Harari , Didier Decoster
发明人： Franck Mallecot , Christine Chaumont , Joël Jacquet , Arnaud Leroy , Antonina Plais , Joe Harari , Didier Decoster
IPC分类号： H01S5/00
CPC分类号： H01S5/0262
摘要： A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first wavelength and including a second active layer, and a third section capable of detecting light at a second wavelength and including a third active layer. The component is characterized in that the second active layer is designed to ensure in the said second section an absorption higher than that which would be allowed by an active layer identical to the said first layer.
摘要翻译：一种半导体电光单片组件，包括连续地包括能够发射第一波长的光并包括第一有源层的第一部分，能够吸收所述第一波长的光并包括第二有源层的第二部分，以及第三部分，检测第二波长的光并包括第三有源层。该部件的特征在于，第二有源层设计成确保在所述第二部分中的吸收高于与所述第一层相同的有源层允许的吸收。

5. 发明授权

US06521471B1 Multi-section opto-electronic component 有权
标题翻译：多段光电组件
公开(公告)号：US06521471B1
公开(公告)日：2003-02-18
申请号：US09650737
申请日：2000-08-30
申请人： Franck Mallecot , Christine Chaumont , Arnaud Leroy , Antonina Plais
发明人： Franck Mallecot , Christine Chaumont , Arnaud Leroy , Antonina Plais
IPC分类号： H01L2100
CPC分类号： H01S5/0262
摘要： The invention concerns a semiconductor opto-electronic component comprising at least two optically active structures (20, 30), at least one of which consists of a detector (30), characterized in that the detector or detectors (30) comprise a first active portion (33) able to detect a signal at a given wavelength and a second inactive portion (34) only slightly sensitive to the signal to be detected and exposed to the non-guided stray light conveyed in the component.
摘要翻译：本发明涉及包括至少两个光学活性结构（20,30）的半导体光电子部件，其中至少一个由检测器（30）组成，其特征在于，检测器（30）包括第一有源部分（33），其能够检测给定波长的信号和仅对所检测的信号稍微敏感并暴露于在部件中传送的未引导杂散光的第二非活性部分（34）。

6. 发明授权

US06208794B1 Multi-section electro-optical monolithic component 有权
标题翻译：多段电光单片组件
公开(公告)号：US06208794B1
公开(公告)日：2001-03-27
申请号：US09411981
申请日：1999-10-04
申请人： Franck Mallecot , Christine Chaumont , Arnaud Leroy , Antonina Plais , Hisao Nakajima
发明人： Franck Mallecot , Christine Chaumont , Arnaud Leroy , Antonina Plais , Hisao Nakajima
IPC分类号： G02B610
CPC分类号： G02B6/4246 , G02B6/12004 , G02B2006/12121 , G02B2006/12123 , H01S5/0262
摘要： A semiconductor electro-optical monolithic component includes at least first and second sections (20, 30) each having respectively a first wave guide (21) and a second wave guide (31) transmitting light, the wave guides being etched in the form of strips and confined between an upper cladding layer (11) doped with carriers of a first type and a lower layer (10A, 10B) doped with carriers of a second type, a third section (40) being disposed between the first and second sections (20, 30) and having a third guide not transmitting light, the third guide being disposed so as to couple the first guide (21) to the said second guide (31). An absorbent layer (70), having a photoluminescence wavelength at least equal to the smallest wavelength of the waves propagating in the first and second wave guides (21, 31), is placed in the said lower layer (10A, 10B) doped with carriers of the second type; the said lower layer (10A, 10B) having an index lower than that of the absorbent layer (70) and that of the said second and third guides (31).
摘要翻译：半导体电光单片部件至少包括分别具有第一波导（21）和第二波导（31）的第一和第二部分（20,30），所述第一波导（21）和第二波导（31）透射光，所述波导以带状并且限制在掺杂有第一类型的载流子的上覆层（11）和掺杂有第二类型载体的下层（10A，10B）之间，第三部分（40）设置在第一和第二部分（20）之间，30）并且具有不透光的第三引导件，所述第三引导件设置成将所述第一引导件（21）联接到所述第二引导件（31）。具有至少等于在第一和第二波导（21,31）中传播的波的最小波长的光致发光波长的吸收层（70）放置在掺杂载体的所述下层（10A，10B）中的第二种类型所述下层（10A，10B）的折射率低于吸收层（70）和所述第二和第三导向件（31）的折射率。

7. 发明授权

US06236794B1 Multi-section electro-optical monolithic component 有权
标题翻译：多段电光单片组件
公开(公告)号：US06236794B1
公开(公告)日：2001-05-22
申请号：US09327533
申请日：1999-06-08
申请人： Franck Mallecot , Antonina Plais , Christine Chaumont
发明人： Franck Mallecot , Antonina Plais , Christine Chaumont
IPC分类号： G02B610
CPC分类号： G02B6/12007 , G02B6/12004 , G02B2006/12121 , G02B2006/12123 , G02B2006/12142 , H01S5/0262 , H01S5/0265 , H01S5/0625
摘要： The invention relates to a semiconductor electro-optical monolithic component. The component is made up of at least two sections, each of which has a respective waveguide, the waveguides being etched in the form of ridges, disposed in line, and buried in a cladding layer. The sections are electrically isolated from one other by a resistive zone. At the interface between two sections, the waveguides are locally of an extended width not less than the width of the resistive zone.
摘要翻译：本发明涉及一种半导体电光单片组件。该部件由至少两个部分组成，每个部分具有相应的波导，波导被以脊线的形式蚀刻，并且埋设在包覆层中。这些部分通过电阻区域彼此电隔离。在两部分之间的界面处，波导局部地具有不小于电阻区宽度的延伸宽度。

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